Bizarre Patents
A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8101985 | Capacitors and methods of manufacture thereof Capacitors are formed in metallization layers of semiconductor device in regions where functional conductive features are not formed, more efficiently using real estate of integrated circuits. The capacitors may be stacked and connected in parallel to provide increa... | 01/24/2012 |
| 8093640 | Method and system for incorporating high voltage devices in an EEPROM A method and system for fabricating a stacked capacitor and a DMOS transistor are disclosed. In one aspect, the method and system include providing a bottom plate, an insulator, and an additional layer including first and second plates. The insulator covers at least... | 01/10/2012 |
| 8084803 | Capacitor and method of manufacturing the same A capacitor with a mixed structure of a Metal Oxide Semiconductor (MOS) capacitor and a Poly-silicon Insulator Poly-silicon (PIP) capacitor includes a substrate and a diffusion junction region formed over the substrate. A high concentration diffusion junction region... | 12/27/2011 |
| 8067793 | Semiconductor device including storage capacitor with yttrium oxide capacitor dielectric A method for manufacturing a semiconductor device with high response speed and high reliability. In the method for manufacturing a semiconductor device of the invention, a bonding layer is formed over a substrate, an insulating film and a storage capacitor portion l... | 11/29/2011 |
| 8013377 | Method for producing an integrated circuit and arrangement comprising a substrate Embodiments of the invention relate to an integrated circuit comprising a carrier, having a capacitor with a first electrode and a second electrode. The first electrode has a dielectric layer A layer sequence is arranged on the carrier, the capacitor being introduce... | 09/06/2011 |
| 7999300 | Memory cell structure and method for fabrication thereof A memory cell includes a substrate, an access transistor and a storage capacitor. The access transistor comprising a gate stack disposed on the substrate, and a first and second diffusion region located on a first and second opposing sides of the gate stack. The sto... | 08/16/2011 |
| 7999299 | Semiconductor memory device having capacitor for peripheral circuit Provided is a semiconductor memory device having peripheral circuit capacitors. In the semiconductor memory device, a first node is electrically connected to a plurality of lower electrodes of a plurality of capacitors in a peripheral circuit region to connect at le... | 08/16/2011 |
| 7994560 | Integrated circuit comprising a transistor and a capacitor, and fabrication method An integrated circuit includes a substrate and at least one active region. A transistor produced in the active region separated from the substrate. This transistor includes a source or drain first region and a drain or source second region which are connected by a c... | 08/09/2011 |
| 7960772 | Tuning capacitance to enhance FET stack voltage withstand An RF switch to controllably withstand an applied RF voltage Vsw, or a method of fabricating such a switch, which includes a string of series-connected constituent FETs with a node of the string between each pair of adjacent FETs. The method includes controlling cap... | 06/14/2011 |
| 7956399 | Semiconductor device with low buried resistance and method of manufacturing such a device The invention relates to a semiconductor device (10) with a substrate (11) and a semiconductor body (12) of silicon which comprises an active region (A) with a transistor (T) and a passive region (P) surrounding the active region (A) and which i... | 06/07/2011 |
| 7919802 | MIM capacitor structure and fabricating method thereof A method for fabricating an MIM capacitor is disclosed. First, a substrate is provided having a first dielectric layer thereon. Next at least one first damascene conductor is formed within the first dielectric layer, and a second dielectric layer with a capacitor op... | 04/05/2011 |
| 7863665 | Method and structure for reducing cracks in a dielectric layer in contact with metal A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than th... | 01/04/2011 |
| 7847330 | Four vertically stacked memory layers in a non-volatile re-writeable memory device A multi-layer non-volatile memory integrally formed on top of a substrate including active circuitry is disclosed. Each layer of memory includes memory cells (e.g., a two-terminal memory cell) having a multi-resistive state material layer that changes its resistive ... | 12/07/2010 |
| 7825450 | Sacrificial self-aligned interconnect structures A sacrificial, self-aligned polysilicon interconnect structure is formed in a region of insulating material adjacent to an active region location and underlying a semiconductor device of a substrate assembly in order to electrically connect the active region and the... | 11/02/2010 |
| 7808030 | Electronic component manufacturing method and electronic component The electronic component includes a base material, a capacitor unit, and a wiring portion. The capacitor unit has a stacked structure including a first electrode portion provided on the base material, a second electrode portion including a first surface opposing the... | 10/05/2010 |
| 7795662 | Semiconductor memory device and method for fabricating same A semiconductor memory device has a first interlayer insulating film formed on a semiconductor substrate and having a capacitor opening portion provided in the film, and a capacitance element formed over the bottom and sides of the capacitor opening portion and comp... | 09/14/2010 |
| 7768054 | Semiconductor component with integrated capacitance structure and method for fabrication thereof A semiconductor component has an insulating layer which is formed on a semiconductor substrate and in which a capacitance structure (K) is formed. The capacitance structure (K) has at least two metallization planes (1 to 7) which are arranged parallel ... | 08/03/2010 |
| 7763924 | Dynamic random access memory structure having merged trench and stack capacitors A dynamic random access memory structure includes a recessed-gate transistor disposed in the substrate; a trench capacitor structure disposed in the substrate and electrically connected to a first source/drain of the recessed-gate transistor; a first conductive stru... | 07/27/2010 |
| 7763923 | Metal-insulator-metal capacitor structure having low voltage dependence A semiconductor capacitor device. A dielectric layer is on a substrate. A stack capacitor structure is disposed in the dielectric layer and comprises first and overlying second MIM capacitors electrically connected in parallel. The first and second MIM capacitors ha... | 07/27/2010 |
| 7745866 | Semiconductor device and method for fabricating the same A semiconductor device includes a capacitor which has: a lower electrode formed along an opening provided above a semiconductor substrate to have a concave cross section; a capacitor insulating film formed on the inner and top surfaces of the lower electrode; and an... | 06/29/2010 |
| 7732850 | Semiconductor device including an improved capacitor and method for manufacturing the same In a semiconductor device according to embodiments of the invention, a capacitor includes a storage electrode having a cylindrical storage conductive layer pattern and connecting members formed on the upper portion of the cylindrical storage conductive layer pattern... | 06/08/2010 |
| 7671395 | Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other Integrated circuit devices are provide having a vertical diode therein. The devices include an integrated circuit substrate and an insulating layer on the integrated circuit substrate. A contact hole penetrates the insulating layer. A vertical diode is in lower regi... | 03/02/2010 |
| 7655969 | Semiconductor device having a cylindrical capacitor A DRAM device has a stacked capacitor including a first capacitor section received in a thick insulation film and a second capacitor section overlying the first capacitor section. A portion of the bottom electrode in the second capacitor section has a thickness larg... | 02/02/2010 |
| 7642590 | Semiconductor device and method for making the same A method for forming a semiconductor device is provided. The method comprises providing a substrate with recessed gates and deep trench capacitor devices therein. Protrusions of the recessed gates and upper portions of the deep trench capacitor devices are revealed.... | 01/05/2010 |
| 7586143 | Semiconductor device A substrate is provided with a first wiring layer 111, an interlayer insulating film 132 on the first wiring layer 111, a hole 112A formed in the interlayer insulating film, a first metal layer 112 covering the hole 112A, a ... | 09/08/2009 |
| 7579642 | Gate-enhanced junction varactor A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. ... | 08/25/2009 |
| 7547938 | Semiconductor devices having elongated contact plugs A method of manufacturing a semiconductor device includes forming conductive structures on a substrate. Each of the conductive structures has a line shape that extends along a first direction parallel to the substrate. Insulating spacers are formed on upper sidewall... | 06/16/2009 |
| 7528431 | Semiconductor device having isolation pattern in interlayer insulating layer between capacitor contact plugs and methods of fabricating the same A semiconductor device having an isolation pattern inside an interlayer insulating layer between capacitor contact plugs and methods of fabrication the same: The semiconductor device includes an interlayer insulating layer covering a semiconductor substrate. At leas... | 05/05/2009 |
| 7508023 | Capacitor structure and fabricating method thereof A capacitor structure is described, including a substrate, a first metal layer in the substrate, an etching stop layer on the substrate having therein an opening that exposes a portion of the first metal layer, a connection layer on the portion of the first metal la... | 03/24/2009 |
| 7495276 | Radio frequency arrangement, method for producing a radio frequency arrangement and use of the radio frequency arrangement A radio frequency arrangement is disclosed, having a first semiconductor body with an integrated circuit formed therein and also with first and second terminal locations. A second semiconductor body with a charge store integrated therein and with a first and second ... | 02/24/2009 |
| 7485911 | Semiconductor device having decoupling capacitor and method of fabricating the same A semiconductor device having a decoupling capacitor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a cell region, a first peripheral circuit region, and a second peripheral circuit region. At le... | 02/03/2009 |
| 7468534 | Localized masking for semiconductor structure development Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized maski... | 12/23/2008 |
| 7459745 | Methods of forming capacitors for semiconductor memory devices and resulting semiconductor memory devices Methods of forming capacitors include forming a first mold layer and a second mold layer on a substrate, forming storage electrodes through the mold layers, the storage electrodes arranged in rows extending in a first direction and spaced apart from adjacent storage... | 12/02/2008 |
| 7449741 | SRAM cell structure and manufacturing method thereof A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an openi... | 11/11/2008 |
| 7446365 | Fabricated layered capacitor for a digital-to-analog converter A fabricated layered capacitor having three layers is provided. The first bottom layer comprises a first bottom plate portion, the second middle layer comprises a first top plate portion, and the third top layer comprises a second bottom plate portion of the layered... | 11/04/2008 |
| 7446366 | Process sequence for doped silicon fill of deep trenches A method for void free filling with in-situ doped amorphous silicon of a deep trench structure is provided in which a first fill is carried out in at a temperature, pressure and dopant to silane ratio such that film deposition occurs from the bottom of the trench up... | 11/04/2008 |
| 7442981 | Capacitor of semiconductor device and method of fabricating the same Provided is a capacitor of a semiconductor device and a method of fabricating the same. In one embodiment, the capacitor includes a lower electrode formed on a semiconductor substrate; a dielectric layer formed on the lower electrode; and an upper electrode that is ... | 10/28/2008 |
| 7442976 | DRAM cells with vertical transistors The invention includes a semiconductor structure having U-shaped transistors formed by etching a semiconductor substrate. In an embodiment, the source/drain regions of the transistors are provided at the tops of pairs of pillars defined by crossing trenches in the s... | 10/28/2008 |
| 7436014 | Method of fabricating storage capacitor in semiconductor memory device, and storage capacitor structure A storage capacitor has a double cylinder type structure, with a small cylinder in a lower part thereof and a cylindrical lower electrode structure disposed on the cylindrical contact plug. A method of fabricating the storage capacitor includes: forming a contact ho... | 10/14/2008 |
| 7436016 | MIM capacitor with a cap layer over the conductive plates A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom plate, and depositing an insulating layer over the MIM capacitor bott... | 10/14/2008 |
