Did You Know...
...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
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| Number | Title | Issue Date |
| 8178864 | Asymmetric barrier diode A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electr... | 05/15/2012 |
| 7977667 | Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same Methods of forming planar carbon nanotube (“CNT”) resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material, patterning the first dielectric material, etching the first dielectric material to form a f... | 07/12/2011 |
| 7932513 | Magnetic random access memory, and write method and manufacturing method of the same A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed... | 04/26/2011 |
| 7847283 | Three-dimensional memory cells The present invention discloses a three-dimensional memory (3D-M) with polarized 3D-ROM (three-dimensional read-only memory) cells. Polarized 3D-ROM can ensure a larger unit array and therefore, a better integratibility. ... | 12/07/2010 |
| 7800098 | Array substrate for liquid crystal display device and method of fabricating the same An array substrate for a liquid crystal display device includes a substrate having a display area and a driving circuit area, a first semiconductor layer formed on the substrate in the display area, the first semiconductor layer having an active region and source an... | 09/21/2010 |
| 7595500 | High speed electron tunneling devices A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it t... | 09/29/2009 |
| 7531830 | Spin-polarization devices using rare earth-transition metal alloys A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE-TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho,... | 05/12/2009 |
| 7462860 | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow ... | 12/09/2008 |
| 7453084 | Spin transistor with ultra-low energy base-collector barrier A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective base and the collector, and a transfer ratio of more than 10−3 | 11/18/2008 |
| 7442953 | Wavelength selective photonics device A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons... | 10/28/2008 |
| 7417227 | Scanning interference electron microscope The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an amplitude image cannot be displayed simultaneously; and (3) Detection efficie... | 08/26/2008 |
| 7402833 | Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication A multilayer dielectric tunnel barrier structure and a method for its formation which may be used in non-volatile magnetic memory elements comprises an ALD deposited first nitride junction layer formed from one or more nitride monolayers i.e., AlN, an ALD deposited ... | 07/22/2008 |
| 7379321 | Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect Memory cell structures make use of the extraordinary Hall effect (EHE) for increased data storage capacity. A memory cell has a ferromagnetic structure which includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer in between t... | 05/27/2008 |
| 7368341 | Semiconductor circuit arrangement with trench isolation and fabrication method An explanation is given of, inter alia, a circuit arrangement containing a trench which penetrates through a charge-storing layer (18) and a doped semiconductor layer (14). The trench simultaneously fulfils a multiplicity of functions, namely an insula... | 05/06/2008 |
| 7355254 | Pinning layer for low resistivity N-type source drain ohmic contacts A system or apparatus including an N-type transistor structure including a gate electrode formed on a substrate and source and drain regions formed in the substrate; a contact to the source region; and a pinning layer disposed between the source region and the first... | 04/08/2008 |
| 7355261 | Thin film device, thin film device module, and method of forming thin film device module A thin film device includes a thin film element disposed on a surface of a substrate for high voltage formed of a material having an electric resistivity in the range of 108 Ω·cm to 1010 Ω·cm, with an adhesive layer in between. The substrat... | 04/08/2008 |
| 7351997 | Single photon receptor A photon receptor having a sensitivity threshold of a single photon is readily fabricated on a nanometric scale for compact and/or large-scale array devices. The fundamental receptor element is a quantum dot of a direct semiconductor, as for example in a semiconduct... | 04/01/2008 |
| 7351996 | Method of increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted wi... | 04/01/2008 |
| 7349187 | Tunnel barriers based on alkaline earth oxides Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of alkaline earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. ... | 03/25/2008 |
| 7349185 | Three terminal magnetic sensor for magnetic heads with a semiconductor junction The TTM sensor includes a semiconductor structure and a spin valve structure, where the semiconductor structure includes at least two layers. Two of the three leads of the TTM sensor are engaged to the semiconductor layers, where a semiconductor junction between the... | 03/25/2008 |
| 7335909 | Superconducting phase-charge qubits A quantum computing structure comprising a superconducting phase-charge qubit, wherein the superconducting phase-charge qubit comprises a superconducting loop with at least one Josephson junction. The quantum computing structure also comprises a first mechanism for ... | 02/26/2008 |
| 7326598 | Method of fabricating polycrystalline silicon A method of fabricating polycrystalline silicon according to an embodiment includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in th... | 02/05/2008 |
| 7323734 | Phase changeable memory cells A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area... | 01/29/2008 |
| 7321131 | Universal gates for ising TQFT via time-tilted interferometry Experiments suggest that the mathematically weakest non-abelian TQFT may be physically the most robust. Such TQFT's—the ν=5/2 FQHE state in particular—have discrete braid group representations, so one cannot build a universal quantum computer from these alone. ... | 01/22/2008 |
| 7319227 | Cryogenic detector device A cryogenic detector device includes a sensor based on a low-temperature effect and measures the temperature increase produced by the introduction of energy, such as an X-ray quantum. The smaller the thermal capacity of the sensor, the greater the temperature increa... | 01/15/2008 |
| 7276285 | Nanotube fabrication basis A structure having a substrate, patterned metal layer and a catalyst island formed on the metal layer. The surface of the substrate upon which the metal layer is formed may be oxidized. As an illustrative example, the metal may be HfN and the catalyst island may be ... | 10/02/2007 |
| 7274080 | MgO-based tunnel spin injectors A MgO tunnel barrier is sandwiched between semiconductor material on one side and a ferri- and/or ferromagnetic material on the other side to form a spintronic element. The semiconductor material may include GaAs, for example. The spintronic element may be used as a... | 09/25/2007 |
| 7271455 | Formation of fully silicided metal gate using dual self-aligned silicide process An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of for... | 09/18/2007 |
| 7271799 | Display driver, display device, and portable electronic apparatus A display driver includes a display driving part for receiving image data and outputting a drive signal to a display panel; a nonvolatile memory part for storing control information for controlling output of the display driving part; and a control part for controlli... | 09/18/2007 |
| 7265394 | Spin tunnel transistor Some spin tunnel transistors with a larger current transmittance and a higher MR ratio are described. One of the spin tunnel transistor comprises a collector; an emitter; abase formed between the collector and the emitter, including a first ferromagnetic meta... | 09/04/2007 |
| 7262502 | Phase-change random access memory device and method for manufacturing the same Disclosed are a phase-change random access memory device and a method for manufacturing the same. The phase-change random access memory includes a first insulation layer having first contact holes, conductive plugs for filling the first contact holes, a second insul... | 08/28/2007 |
| 7259419 | Programmable memory device, integrated circuit including the programmable memory device, and method of fabricating same An integrated circuit comprises a memory device including an isolation layer for defining an active area of a substrate, a tunnel oxide layer formed on the active area, a floating gate formed over the active area and the isolation layer, an inter-gate dielectric lay... | 08/21/2007 |
| 7257021 | Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry A ferromagnetic memory cell is disclosed having a base (21), oriented in a horizontal plane, a bit (19), made of a ferromagnetic material, and a sense/write line (20), positioned proximate the bit (19) sufficient to detect the directed po... | 08/14/2007 |
| 7252852 | Mg-Zn oxide tunnel barriers and method of formation ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR). The TMR may be increased by annealing the magnetic tunnel junctions. The zinc-magnes... | 08/07/2007 |
| 7230265 | Spin-polarization devices using rare earth-transition metal alloys A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE—TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, H... | 06/12/2007 |
| 7226894 | Superconducting wire, method of manufacture thereof and the articles derived therefrom Disclosed herein is method for making a wire comprising contacting a first end of a first superconducting wire with a second end of a second superconducting wire, wherein the superconducting wire comprises a superconducting filament having a superconducting composit... | 06/05/2007 |
| 7208784 | Single-electron transistor for detecting biomolecules A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is provided on the substrate fac... | 04/24/2007 |
| 7180115 | DRAM cell structure with tunnel barrier The invention relates to a transistor that is provided with a first source/drain area (S/D1), a channel area (KA) adjacent thereto, a second source/drain area (S/D 2) adjacent thereto, a gate dielectric and a gate electrode. A first capacitor electrode... | 02/20/2007 |
| 7178222 | Method of manufacturing a tunneling magnetoresistive element Insulating layers are formed on both sides of a multilayer film, and bias layers are formed in contact with at least portions of both end surfaces of a free magnetic layer. The bias layers are formed so as not to extend to the upper surface of the multilayer film. I... | 02/20/2007 |
| 7176483 | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions An electrical junction that includes a semiconductor (e.g., C, Ge, or an Si-based semiconductor), a conductor, and an interface layer disposed therebetween. The interface layer is sufficiently thick to depin a Fermi level of the semiconductor, yet sufficiently thin ... | 02/13/2007 |
