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| Number | Title | Issue Date |
| 8164080 | Diode structures and resistive random access memory devices having the same A diode structure includes: a lower electrode and an insulating layer disposed on the lower electrode. The insulating layer includes aperture exposing a portion of the lower electrode. The diode structure further includes: a first layer and a second layer. The first... | 04/24/2012 |
| 8158965 | Heating center PCRAM structure and methods for making Memory devices are described along with manufacturing methods. A memory device as described herein includes a bottom electrode and a first phase change layer comprising a first phase change material on the bottom electrode. A resistive heater comprising a heater mat... | 04/17/2012 |
| 8148708 | Resistive memory device and method of fabricating the same A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged over the first conductive line, a resistive element including a resistive layer arranged over the vertical se... | 04/03/2012 |
| 8129706 | Structures and methods of a bistable resistive random access memory Structures and methods to form a bistable resistive random access memory for reducing the amount of heat dissipation from electrodes by confining a heating region in the memory cell device are described. The heating region is confined in a kernel comprising a progra... | 03/06/2012 |
| 8124953 | Sensor device having a porous structure element A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semic... | 02/28/2012 |
| 8124954 | Conductive bridging random access memory device and method of manufacturing the same A conductive bridging random access memory (CBRAM) device and a method of manufacturing the same are provided. The CBRAM device includes a first electrode layer, a dielectric layer, a solid electrolyte layer, a second electrode layer and a metal layer. The solid ele... | 02/28/2012 |
| 8120003 | Nanowire magnetic random access memory An integrated array of non volatile magnetic memory devices, each having a first magnetic layer (10) with a fixed magnetization direction; a free magnetic layer (20) with a changeable magnetization direction; a spacer layer (30) separating the f... | 02/21/2012 |
| 8101938 | Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method A method of fabricating a chalcogenide memory cell is described. The cross-sectional area of a chalcogenide memory element within the cell is controlled by the thickness of a bottom electrode and the width of a word line. The method allows the formation of ultra sma... | 01/24/2012 |
| 8097872 | Modifiable gate stack memory element An apparatus and method for storing information are provided, including using an integrated circuit including a transistor having a channel, a gate oxide layer, a gate electrode, and a modifiable gate stack layer. To store information, the on-resistance of the trans... | 01/17/2012 |
| 8097873 | Phase change memory structures A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion.... | 01/17/2012 |
| 8089060 | Non-volatile memory cell and fabrication method thereof A non-volatile memory cell and a fabrication method thereof are provided. The non-volatile memory cell includes an anode; a cathode having a surface facing the anode; a specific structure disposed on the surface; and an ion conductor disposed among the anode, the ca... | 01/03/2012 |
| 8076664 | Phase change memory with layered insulator A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating layers and the pores may be filled with heaters, chalcogenide layers, and ... | 12/13/2011 |
| 8067761 | Self-aligned memory cells and method for forming The invention provides a memory cell based on variable resistance material memory element that includes an access device having a pillar structure that may also include a protective sidewall layer. The pillar access device selects and isolates the memory cell from o... | 11/29/2011 |
| 8053752 | Four-terminal reconfigurable devices Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a p... | 11/08/2011 |
| 8049197 | Self-aligned nano-cross-point phase change memory One embodiment is a phase change memory that includes a heater element transversely contacting a storage element of phase change material. In particular, an end of the storage element contacts an end of the heater element. A first pair of dielectric spacers is posit... | 11/01/2011 |
| 8026502 | Phase-change nonvolatile memory and manufacturing method therefor A phase-change nonvolatile memory (PRAM) is constituted of a semiconductor substrate, a lower electrode, a first interlayer insulating film having a first hole, an impurity diffusion layer embedded in the first hole, a second interlayer insulating film having a seco... | 09/27/2011 |
| 8026503 | Phase-change memory and method of making same A phase-change memory cell structure includes a bottom diode on a substrate; a heating stem on the bottom diode; a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem; a phase-change storage ... | 09/27/2011 |
| 8022382 | Phase change memory devices with reduced programming current A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a ... | 09/20/2011 |
| 8017930 | Pillar phase change memory cell A memory cell includes a first electrode, a storage location, and a second electrode. The storage location includes a phase change material and contacts the first electrode. The storage location has a first cross-sectional width. The second electrode contacts the st... | 09/13/2011 |
| 8013319 | Phase change memory device having a bent heater and method for manufacturing the same A phase change memory device includes heaters which are formed in their respective memory cells and vertically positioned stack patterns having phase change layers and top electrodes which are formed to come into contact with the heaters. The heaters have horizontal... | 09/06/2011 |
| 8008644 | Phase-change memory cell having two insulated regions A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crys... | 08/30/2011 |
| 8003971 | Integrated circuit including memory element doped with dielectric material An integrated circuit includes a first electrode, a second electrode, and a damascene structured memory element coupled to the first electrode and the second electrode. The memory element has a height and a width. The height is greater than or equal to the width. Th... | 08/23/2011 |
| 7999247 | Electrode having a transparent electrode layer, electronic device and method for manufacturing the same Disclosed is an electrode having a transparent electrode layer, an opaque electrode layer formed on the transparent electrode layer and catalyst formed on an open surface on the transparent electrode layer, which open surface is not covered by the opaque electrode l... | 08/16/2011 |
| 7989795 | Phase change memory device and method for fabricating the same A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase cha... | 08/02/2011 |
| 7982203 | CMOS-process-compatible programmable via device Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided comprising a substrate; a dielectric layer on the substrate; a heater on at least a portion of a side of the dielectric layer opposite... | 07/19/2011 |
| 7973302 | Forming phase change memory cells Small phase change memory cells may be formed by forming a segmented heater over a substrate. A stop layer may be formed over the heater layer and segmented with the heater layer. Then, sidewall spacers may be formed over the segmented heater to define an aperture b... | 07/05/2011 |
| 7964861 | Method and apparatus for reducing programmed volume of phase change memory A phase change memory includes a volume of phase change material disposed between, and coupled to, two electrodes, with the composition of a region of at least one of the two electrodes or phase change material having been compositionally altered to reduce the progr... | 06/21/2011 |
| 7952086 | Phase-change nonvolatile memory device using Sb-Zn alloy Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an a... | 05/31/2011 |
| 7943919 | Integrated circuit with upstanding stylus A stylus, an integrated circuit (IC) and method of forming the IC. The stylus extends upward from its apex and has a substantially circular cross section that decreases in diameter upward from the apex. The stylus is formed in a mold that may be formed in an orifice... | 05/17/2011 |
| 7943920 | Resistive memory structure with buffer layer A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and ... | 05/17/2011 |
| 7935950 | Controllable ovonic phase-change semiconductor memory device and methods of programming the same An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of programming the same are disclosed. Such memory devices include a lower electrode including non-parallel sidewalls. An ins... | 05/03/2011 |
| 7932509 | Phase change memory element A phase change memory device is disclosed, including a substrate. The phase change memory also includes a bottom electrode. A conductive structure with a cavity is provided to electrically contact the bottom electrode, wherein the conductive structure includes sidew... | 04/26/2011 |
| 7928422 | Phase change memory device capable of increasing sensing margin and method for manufacturing the same A phase change memory device capable of increasing a sensing margin and a method for manufacturing the same. The phase change memory device includes a semiconductor substrate formed with a device isolation structure which defines active regions; first conductivity t... | 04/19/2011 |
| 7928420 | Phase change tip storage cell A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change... | 04/19/2011 |
| 7928421 | Phase change memory cell with vacuum spacer A memory device. The device includes first and second electrode members, in spaced relation on a substrate. A phase change element lies in electrical contact with the first and second electrode elements and spans the space separating them. The phase change element i... | 04/19/2011 |
| 7923713 | High density chalcogenide memory cells A non-volatile memory cell is constructed from a chalcogenide alloy structure and an associated electrode side wall. The electrode is manufactured with a predetermined thickness and juxtaposed against a side wall of the chalcogenide alloy structure, wherein at least... | 04/12/2011 |
| 7910906 | Memory cell device with circumferentially-extending memory element A memory device comprises a contact and a pillar-shaped structure on the contact. The pillar-shaped structure includes a conductive inner element surrounded by a memory outer layer. A transition region is located at the memory outer layer above said contact. The con... | 03/22/2011 |
| 7893418 | Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods A memory device as described herein includes a memory member contacting first and second interface structures. The first interface structure electrically and thermally couples the memory member to access circuitry and has a first thermal impedance therebetween. The ... | 02/22/2011 |
| 7888667 | Phase change memory device A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heat... | 02/15/2011 |
| 7888666 | Common word line edge contact phase-change memory The cross-sectional area of a contact with a phase-change memory element within the cell is controlled by a first dimension of a bottom electrode and a second dimension controlled by an etch process. The contact area is a product of the first dimension and the secon... | 02/15/2011 |
