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"During my service in the United States Congress, I took the initiative in creating the Internet."
Al Gore ; The basis for the later misquote by US Republicans that Gore had "invented" the Internet. Gore was the leading political champion of the modern-day Internet.
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| Number | Title | Issue Date |
| 8188525 | Image sensor An image sensor includes a substrate, transparent layers covering the substrate and delimiting an exposition surface exposed to light, separate photosensitive areas at the substrate level and, for each photosensitive area, a first optical means capable of deviating ... | 05/29/2012 |
| 8148762 | Photodiodes, image sensing devices and image sensors Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above th... | 04/03/2012 |
| 8134191 | Solid-state imaging device, signal processing method, and camera A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of vis... | 03/13/2012 |
| 8134192 | Integrated structure of MEMS device and CMOS image sensor device An integrated structure of MEMS device and CIS device and a fabricating method thereof includes providing a substrate having a CIS region and a MEMS region defined therein with a plurality of CIS devices positioned in the CIS region; performing a multilevel intercon... | 03/13/2012 |
| 8120081 | Solid-state imaging device and method for manufacturing same In a back-illuminated solid-state imaging device, a multilayer interconnect layer, a semiconductor substrate, a plurality of color filters, and a plurality of microlenses are provided in this order. A p-type region is formed so as to partition a lower portion of the... | 02/21/2012 |
| 8084798 | Semiconductor device having image sensor A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and s... | 12/27/2011 |
| 8076704 | Organic light emitting device and manufacturing method thereof An organic light emitting device according to an embodiment includes a thin film transistor substrate including a plurality of thin film transistors and an over-coating film formed on the thin film transistors. The over-coating film includes a curved surface on at l... | 12/13/2011 |
| 8072015 | Solid-state imaging device and manufacturing method thereof A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The elemen... | 12/06/2011 |
| 8049257 | CMOS image sensor Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor characteristics and to protect the microlenses during packaging. The CMOS image sensor may include: a semiconductor sub... | 11/01/2011 |
| 8035144 | Color image sensor with improved optical crosstalk The invention relates to image sensors produced on a thinned silicon substrate. To limit the optical crosstalk between adjacent filters and, notably filters of different colors, the invention proposes positioning, between the adjacent filters of different colors (FR... | 10/11/2011 |
| 8026541 | Liquid crystal display panel having reflective area protrusions A liquid crystal display (LCD) panel is provided. The LCD panel includes an active device array substrate, an opposite substrate, and a liquid crystal layer. The active device array substrate includes a plurality of pixel units, and each of the pixel units has a ref... | 09/27/2011 |
| 8022453 | Image sensor and manufacturing method for same An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second ... | 09/20/2011 |
| 8022452 | Elimination of glowing artifact in digital images captured by an image sensor A source/drain region of a transistor or amplifier is formed in a substrate layer and is connected to a voltage source. A glow blocking structure is formed at least partially around the source/drain region and is disposed between the source/drain region and an imagi... | 09/20/2011 |
| 8017984 | Solid-state imaging device A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover a... | 09/13/2011 |
| 8004028 | Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device A solid state imaging device including photoelectric conversion devices which are arranged two-dimensionally; a color filter including a plurality of picture elements, each disposed corresponding to each of the photoelectric conversion devices; and a plurality of tr... | 08/23/2011 |
| 7989861 | Image sensor and method of stabilizing a black level in an image sensor An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second... | 08/02/2011 |
| 7973347 | Complementary metal oxide silicon image sensor and method of fabricating the same Disclosed is a method of fabricating a CMOS (Complementary Metal Oxide Silicon) image sensor. The method includes the steps of: forming a device protective layer and a metal interconnection on a substrate formed with a light receiving device; forming an inner micro-... | 07/05/2011 |
| 7968923 | Image sensor array with conformal color filters An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment wi... | 06/28/2011 |
| 7960769 | Solid-state imaging device and method for manufacturing same In a CMOS image sensor, an N-type semiconductor layer is formed on a P-type semiconductor substrate. P-type semiconductor regions are formed in one part of the semiconductor layer over the entire length of the thickness direction of the semiconductor layer in a latt... | 06/14/2011 |
| 7956394 | Separation type unit pixel having 3D structure for image sensor A separation type unit pixel having a 3D structure for an image sensor, composed of a plurality of transistors, includes: a first wafer which includes a photodiode, a transfer transistor, a node of a floating diffusion area functioning as static electricity for conv... | 06/07/2011 |
| 7948018 | Multilayer image sensor structure for reducing crosstalk An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the f... | 05/24/2011 |
| 7928488 | Unit pixels, image sensor containing unit pixels, and method of fabricating unit pixels Example embodiments provide a unit pixel, an image sensor containing unit pixels, and a method of fabricating unit pixels. The unit pixel may include a semiconductor substrate, photoelectric transducers formed within the semiconductor substrate, multi-layered wiring... | 04/19/2011 |
| 7928487 | Solid-state imaging device and driving method of solid-state imaging device A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area excep... | 04/19/2011 |
| 7919798 | Image sensor and fabricating method thereof An image sensor and fabricating method thereof for preventing cross-talk between neighboring pixels by providing at least three light-shield walls combining to extend vertically above a lateral periphery of a photodiode for deflecting light from a microlens array to... | 04/05/2011 |
| 7898011 | Image sensor having anti-reflection film for reducing crosstalk An image sensor for reducing crosstalk includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. T... | 03/01/2011 |
| 7888717 | Thin film transistor substrate having color filter with reverse taper shape A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transi... | 02/15/2011 |
| 7875918 | Multilayer image sensor pixel structure for reducing crosstalk An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and dop... | 01/25/2011 |
| 7868368 | Complementary metal oxide semiconductor (CMOS) image sensor A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking ... | 01/11/2011 |
| 7859033 | Wafer level processing for backside illuminated sensors A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor ... | 12/28/2010 |
| 7808023 | Method and apparatus providing integrated color pixel with buried sub-wavelength gratings in solid state imagers Imaging devices utilizing sub-wavelength gratings to separate the spectral components of the natural white light are disclosed. This disclosed method and apparatus redirects the light to be collected onto separate photosensors for different wavelengths to provide im... | 10/05/2010 |
| 7795656 | Image sensor device having black pixel region An image sensor device includes an optical black pixel region and an active pixel region. The image sensor device includes a light receiving unit including a plurality of light sensitive semiconductor devices that are configured to detect light incident thereon, a p... | 09/14/2010 |
| 7791118 | Solid-state imaging device A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover a... | 09/07/2010 |
| 7755123 | Apparatus, system, and method providing backside illuminated imaging device Method, apparatus, and/or system providing a backside illuminated imaging device. A non-planar metallic or otherwise reflective layer is provided in an image pixel cell at the frontside of the device substrate to capture radiation passing through the device substrat... | 07/13/2010 |
| 7755122 | Complementary metal oxide semiconductor image sensor A CMOS image sensor including a light-receiving element, at least one transistor, a first dielectric layer, a reflective layer, a second dielectric layer, a protective layer, a material layer, a transparent material layer, an optical filter, and a converging element... | 07/13/2010 |
| 7741667 | CMOS image sensor for improving the amount of light incident a photodiode Provided are a CMOS image sensor and a fabricating method thereof. The CMOS image sensor includes a device isolation layer, a plurality of photodiode regions, an interlayer insulating layer, a refracting layer, a planarizing layer, a color filter layer, and a plural... | 06/22/2010 |
| 7737479 | Image sensor An image sensor, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the p... | 06/15/2010 |
| 7709872 | Methods for fabricating image sensor devices Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passiv... | 05/04/2010 |
| 7696547 | Semiconductor device with burried semiconductor regions A solid-state image sensor having a well of a first conductivity type; a photoelectric conversion region having a second conductivity type formed in the well storing charges obtained from a photoelectric conversion; a drain region having the second conductivity type... | 04/13/2010 |
| 7687837 | Image sensor and fabrication method thereof An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor reg... | 03/30/2010 |
| 7683411 | Image sensor and method of manufacturing the same An image sensor and a method of manufacturing the same that includes providing a semiconductor substrate having a photodiode, forming a color filter over the photodiode, forming a micro lens over the color filter and then forming at least one metal layer vertically ... | 03/23/2010 |
