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| Number | Title | Issue Date |
| 8154063 | Ultrafast and ultrasensitive novel photodetectors A photodetector is provided that includes a FET structure with a channel structure having one or more nanowire structures. Noble metal nanoparticles are positioned on the channel structure so as to produce a functionalized channel structure. The functionalized chann... | 04/10/2012 |
| 8106432 | CMOS imager photodiode with enhanced capacitance A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensit... | 01/31/2012 |
| 8106433 | Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a seco... | 01/31/2012 |
| 8022451 | Radiation detector A radiation detector comprises a voltage applying electrode, a photo-conductor layer, and a charge collecting electrode, which are overlaid one upon another. A selective charge transporting layer is located between the voltage applying electrode and the photo-conduc... | 09/20/2011 |
| 7956393 | Composition for photoresist stripper and method of fabricating thin film transistor array substrate A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0... | 06/07/2011 |
| 7880207 | Photo detector device A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substant... | 02/01/2011 |
| 7816715 | Stacked organic photosensitive devices A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength λ1 and a second photoactive region having a characteristic absorption wavelength λ2. The photoactive r... | 10/19/2010 |
| 7768048 | Infrared sensor IC, and infrared sensor and manufacturing method thereof An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a l... | 08/03/2010 |
| 7659564 | CMOS imager photodiode with enhanced capacitance A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensit... | 02/09/2010 |
| 7649220 | Photodetector having dark current correction A photodetector and method for making the same is disclosed. The photodetector includes a substrate having first, second, and third photodiodes and first and second pigment filter layers. The first, second, and third photodiodes generate first, second, and third pho... | 01/19/2010 |
| 7605416 | Thin film translator array panel and a method for manufacturing the panel A gate wire including a gate line and a gate electrode is formed on a substrate and a gate insulating layer is formed on the substrate. A semiconductor pattern and an etching assistant pattern are formed on the gate insulating layer and a source/drain conductor patt... | 10/20/2009 |
| 7504680 | Semiconductor device and mask pattern A semiconductor device according to an aspect of the invention includes a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper e... | 03/17/2009 |
| 7442973 | Solid-state imaging device and production method therefor By improving the embedding property of a light-transmissive material constituting a waveguide, light collection efficiency is improved, and reliability of a solid-state imaging device is ensured. In a solid-state imaging device including a light-receiving sec... | 10/28/2008 |
| 7432530 | Solid-state imaging device and method of manufacturing same A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided... | 10/07/2008 |
| 7420235 | Solid-state imaging device and method for producing the same In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the ch... | 09/02/2008 |
| 7411233 | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semicondu... | 08/12/2008 |
| 7405437 | CMOS image sensor and method for fabricating the same A CMOS image sensor includes a first conductive type semiconductor substrate defined by a photodiode area and a transistor area, a trench formed in the semiconductor substrate corresponding to a transfer transistor of the transistor area, a gate electrode of the tra... | 07/29/2008 |
| 7400004 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro... | 07/15/2008 |
| 7397076 | CMOS image sensor with dark current reduction Disclosed are a CMOS image sensor and a fabrication method thereof, which is adequate to reduce dark current. The CMOS image sensor comprises a device isolation region and an active region, which are formed on a semiconductor substrate; a photocharge generating port... | 07/08/2008 |
| 7382007 | Solid-state image pickup device and manufacturing method for the same A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfe... | 06/03/2008 |
| 7378693 | CMOS image device with polysilicon contact studs A CMOS image device comprises a pixel array region including a photo diode region, a floating diffusion region, and at least one MOS transistor having a gate and a junction region, a CMOS logic region disposed around the pixel array region, the CMOS logic region inc... | 05/27/2008 |
| 7368773 | Photodetector device, solid-state imaging device, and camera system A photodetector device is provided which comprises a photodiode for generating an electrical signal corresponding to an amount of incident light, and a logarithmic conversion transistor for subjecting a voltage value of the electrical signal to logarithmic conversio... | 05/06/2008 |
| 7361527 | Image sensor with improved charge transfer efficiency and method for fabricating the same An image sensor includes: a gate structure on a semiconductor layer of a first conductive type; a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a predetermined depth from a surface portion of the semi... | 04/22/2008 |
| 7359237 | High write selectivity and low power magnetic random access memory and method for fabricating the same A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells a... | 04/15/2008 |
| 7355268 | High reflector tunable stress coating, such as for a MEMS mirror An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of si... | 04/08/2008 |
| 7355259 | Photodiode array and optical receiver device including the same Disclosed is a photodiode array which includes a plurality of p-i-n photodiodes arrayed on a semi-insulative semiconductor substrate, each photodiode including an n-type semiconductor layer grown on the substrate, an i-type semiconductor layer grown on the n-type se... | 04/08/2008 |
| 7355265 | Semiconductor integrated circuit A semiconductor integrated circuit comprising a power supply wiring and a ground wiring and a decoupling capacitor formed between the power supply wiring and the ground wiring, wherein at least one electrode of the decoupling capacitor consists of a shield layer for... | 04/08/2008 |
| 7345328 | Solid-state image pick-up device of photoelectric converting film lamination type A solid-state image pick-up device of a photoelectric converting film lamination type including a semiconductor substrate and at least three layers of photoelectric converting films each of which is interposed between a common electrode film and pixel electrode film... | 03/18/2008 |
| 7345330 | Local interconnect structure and method for a CMOS image sensor A self-aligned silicide (salicide) process is used to form a local interconnect for a CMOS image sensor consistent with a conventional CMOS image sensor process flow. An oxide layer is deposited over the pixel array of the image sensor. Portions of the oxide layer i... | 03/18/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7339963 | High speed data channel including a CMOS VCSEL driver and a high performance photodetector and CMOS photoreceiver A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser ... | 03/04/2008 |
| 7332758 | Semiconductor device A semiconductor device has an electrode pad, a capacitor and a substrate. The substrate has a given area on which the electrode pad and the capacitor are arranged. The electrode pad and the capacitor are arranged on the substrate so that each of at least two sides o... | 02/19/2008 |
| 7334211 | Method for designing a CMOS sensor using parameters An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 02/19/2008 |
| 7317218 | Solid-state imaging device having a punch-through stopper region positioned closer to a signal accumulation region than is an end of the drain region A solid-state imaging device can increase the amount of signal charge accumulation in a photodiode. The solid-state imaging device includes a gate electrode formed on a p-type semiconductor substrate. An n-type signal accumulation region accumulates the signal charg... | 01/08/2008 |
| 7291871 | Pixel structure A pixel structure is provided. The pixel structure comprises a scan line, a data line, a pixel electrode and a thin film transistor. The data line branches out into a plurality of subsidiary lines in the area above the scan line. If there is a short circuit between ... | 11/06/2007 |
| 7286174 | Dual storage node pixel for CMOS sensor A sensor includes control circuitry and a pixel. The pixel includes a photo site, a first storage node and a second storage node. The control circuitry causes the pixel to transfer a first collected signal from the photo site to the first storage node during a first... | 10/23/2007 |
| 7271024 | Method for fabricating sensor semiconductor device A sensor semiconductor device and a method for fabricating the same are proposed. A plurality of metal bumps and a sensor chip are mounted on a substrate. A dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically c... | 09/18/2007 |
| 7271106 | Critical dimension control for integrated circuits Methods of etching substrates with small critical dimensions and altering the critical dimensions are disclosed. In one embodiment, a sulfur oxide based plasma is used to etch an amorphous carbon hard mask layer. The features of a pattern can be shrunk using a plasm... | 09/18/2007 |
| 7259415 | Long retention time single transistor vertical memory gain cell A single transistor vertical memory gain cell with long data retention times. The memory cell is formed from a silicon carbide substrate to take advantage of the higher band gap energy of silicon carbide as compared to silicon. The silicon carbide provides much lowe... | 08/21/2007 |
| 7253865 | Non rectangular display device A display device has an array 40 of pixels and row and column driver circuitry comprising row driver circuit portions R and column driver circuit portions C, each pixel being addressed by a row driver circuit portion R and a column driver circuit portion C wh... | 08/07/2007 |
