Did You Know...
...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8188524 | CMOS image sensor with wide dynamic range The present invention relates a CMOS (Complementary Metal Oxide Semiconductor) image sensor capable of improving dynamic range by using an additional driver transistor. The CMOS image sensor according to the present invention has a pixel array which has a plurality ... | 05/29/2012 |
| 8183609 | Solid-state imaging device and camera Disclosed is a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channe... | 05/22/2012 |
| 8178914 | Method of fabricating back-illuminated imaging sensors A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The substrate includes an insulator layer and an epitaxial layer overlying the insulator layer. A bond pad region is formed extending int... | 05/15/2012 |
| 8169010 | Low-voltage image sensor with sensing control unit formed within Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light r... | 05/01/2012 |
| 8169011 | Image sensor and method of manufacturing the same An image sensor comprises a substrate including a photodiode, and an insulation pattern structure making contact with the photodiode on the substrate. An anti-reflection pattern is formed on the insulation pattern structure and the substrate. The anti-reflection pat... | 05/01/2012 |
| 8164126 | CMOS image sensors including backside illumination structure An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be include... | 04/24/2012 |
| 8164127 | Image sensor including a pixel cell having an epitaxial layer, system having the same, and method of forming a pixel cell A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo co... | 04/24/2012 |
| 8159011 | Complementary metal oxide semiconductor (CMOS) image sensor with extended pixel dynamic range incorporating transfer gate with potential well A charge transfer transistor includes: a first diffusion region and a second diffusion region; a gate for controlling a charge transfer from the first diffusion region to the second diffusion region by a control signal; and a potential well incorporated under the ga... | 04/17/2012 |
| 8148761 | Solid-state imaging device, electronic apparatus, and method for manufacturing the same Photoelectric conversion elements disposed on an imaging surface of a substrate, receiving light incident on a light receiving surface and performing photoelectric conversion to produce a signal charge; electrodes interposed between the photoelectric conversion elem... | 04/03/2012 |
| 8148760 | Visible light detecting semiconductor radiation detector A semiconductor radiation detector device, comprising a bulk layer (103) of semiconductor material, and on the first surface of the bulk layer (303) in the following order: a modified internal gate layer (104) of semiconductor material of second... | 04/03/2012 |
| 8138535 | Method for manufacturing a pixel sensing circuit Systems and methods of pixel sensing circuits. In accordance with a first embodiment of the present invention, a pixel sensing circuit includes a floating diffusion functionally coupled to and surrounded by a ring transfer transistor. The ring transfer transistor is... | 03/20/2012 |
| 8138534 | Anti-reflection structures for CMOS image sensors Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS imag... | 03/20/2012 |
| 8138533 | Semiconductor device with an electrode as an alignment mark, and method of manufacturing the same A semiconductor device includes a semiconductor substrate, a back side drawn electrode formed by embedding a first conductive material in a contact hole penetrating the semiconductor substrate through an insulating film formed to include a uniform thickness, used al... | 03/20/2012 |
| 8138532 | Pin photodiode and manufacturing method of same The objective of this invention is to provide a semiconductor device containing a photodiode and having stable, high sensitivity with respect to short wavelength light near 405 nm, and a manufacturing method for said semiconductor device. PIN photodiode (100C... | 03/20/2012 |
| 8134190 | Image pickup apparatus and image pickup system To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation. A well 302 | 03/13/2012 |
| 8129765 | CMOS image sensor with photo-detector protecting layers An image sensor includes a logic region and an APS region having a first gate electrode, a photo-detector, a first protecting layer, first spacers, and a second protecting layer. The first gate electrode is formed over a semiconductor substrate. The photo-detector i... | 03/06/2012 |
| 8129764 | Imager devices having differing gate stack sidewall spacers, method for forming such imager devices, and systems including such imager devices Imager devices have a sensor array and a peripheral region at least partially surrounding the sensor array. At least one transistor in the peripheral region has a gate stack sidewall spacer that differs in composition from a gate stack sidewall spacer on at least on... | 03/06/2012 |
| 8120077 | Solid-state imaging device comprising doped channel stop at isolation regions to suppress noise Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel w... | 02/21/2012 |
| 8120079 | Light-sensing device for multi-spectral imaging A method of fabricating multi-spectral photo-sensors including photo-diodes incorporating stacked epitaxial superlattices monolithically integrated with CMOS devices on a common semiconductor substrate. ... | 02/21/2012 |
| 8120080 | Image sensor and manufacturing method of image sensor An image sensor includes a trench formed in a semiconductor substrate, a first reflection part formed in the trench and having an inclined, curved surface, a second reflection part formed on the first reflection part such that a remaining space of the trench is fill... | 02/21/2012 |
| 8120078 | Photodiode structure A photodiode structure including a semiconductor of a first conductivity type, the semiconductor having a main surface, a first well formed in the semiconductor at the main surface thereof, the first well being of a second conductivity type opposite to the first con... | 02/21/2012 |
| 8115242 | Pinned photodiode CMOS pixel sensor A multicolor CMOS pixel sensor formed in a p-type semiconductor region includes a first detector formed from an n-type region of semiconductor material located near the surface of the p-type region. A first pinned p-type region is formed at the surface of the p-type... | 02/14/2012 |
| 8110860 | Imaging device First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the periph... | 02/07/2012 |
| 8110859 | Antireflection portion in a shallow isolation trench for a photoelectric conversion device A photoelectric conversion device includes a plurality of photoelectric conversion units each generating charges corresponding to light, an element isolation portion which electrically isolates the plurality of photoelectric conversion units, and an antireflection p... | 02/07/2012 |
| 8106431 | Solid state imaging apparatus, method for driving the same and camera using the same A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to... | 01/31/2012 |
| 8101981 | Back-illuminated, thin photodiode arrays with isolating etched trenches between elements Back-illuminated, thin photodiode arrays with trench isolation. The trenches are formed on one or both sides of a substrate, and after doping the sides of the trenches, are filled to provide electrical isolation between adjacent photodiodes. Various embodiments of t... | 01/24/2012 |
| 8097907 | Solid-state imaging device It is an object to provide an image sensor having a sufficiently-large ratio of a surface area of a light-receiving section to an overall surface area of one pixel. This object is achieved by a solid-state imaging device comprising: a signal line formed on a substra... | 01/17/2012 |
| 8097908 | Antiblooming imaging apparatus, systems, and methods Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier arrangement is configured to block the flow of charge carriers generated outside a photosensitive region. In vario... | 01/17/2012 |
| 8093635 | Solid-state imaging element There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region in... | 01/10/2012 |
| 8093636 | CMOS image sensor A complementary metal-oxide semiconductor (CMOS) image sensor includes a photodiode, a gate pattern of a transfer transistor contacting one side of the photodiode, a gate pattern of a drive transistor disposed to have a predetermined spacing distance from the gate p... | 01/10/2012 |
| 8089109 | Photoelectric conversion device and imaging device A photoelectric conversion device adopts the structure reflecting the finding that color separation by the photoelectric conversion, which utilizes the difference of the PN junction depth of a semiconductor region, has the strong tendency that separation of a B sign... | 01/03/2012 |
| 8084796 | Solid state imaging apparatus, method for driving the same and camera using the same A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to... | 12/27/2011 |
| 8080840 | Image sensor and manufacturing method of image sensor Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry... | 12/20/2011 |
| 8063423 | CMOS image sensor A CMOS image sensor includes a photodiode, a plurality of transistors for transferring charges accumulated at the photodiode to one column line, and a voltage dropping element connected to a gate electrode of at least one transistor among the plurality of transistor... | 11/22/2011 |
| 8063424 | Embedded photodetector apparatus in a 3D CMOS chip stack An embedded photodetector apparatus for a three-dimensional complementary metal oxide semiconductor (CMOS) stacked chip assembly having a CMOS chip and one or more thinned CMOS layers is provided. At least one of the one or more thinned CMOS layers includes an activ... | 11/22/2011 |
| 8053821 | Image sensor with high conversion efficiency An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector... | 11/08/2011 |
| 8049256 | Active pixel sensor having a sensor wafer connected to a support circuit wafer A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by ... | 11/01/2011 |
| 8044446 | Image sensor with compact pixel layout Solid-state image sensors, specifically image sensor pixels, which have three or four transistors, high sensitivity, low noise, and low dark current, are provided. The pixels have separate active regions for active components, row-shared photodiodes and may also con... | 10/25/2011 |
| 8044445 | Photoelectric conversion device and method of manufacturing the same A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer p... | 10/25/2011 |
| 8044444 | CMOS image sensor and fabricating method thereof A fabricating method of a CMOS image sensor includes the steps of: forming a transfer gate on a semiconductor substrate where a device isolation layer is formed; forming a first n-type ion implantation region for a photodiode beneath a surface of the semiconductor s... | 10/25/2011 |
