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| Number | Title | Issue Date |
| RE39393 | Device for reading an image having a common semiconductor layer A device for reading an image (an image reading device) according to this invention comprises therein at least one photoelectric conversion semiconductor device provided on a substrate and at least one thin film transistor circuit element provided on the substrate w... | 11/14/2006 |
| 7132724 | Complete-charge-transfer vertical color filter detector A vertical-color-filter detector disposed in a semiconductor structure comprises a complete-charge-transfer detector comprising semiconductor material doped to a first conductivity type and has a horizontal portion disposed at a first depth in the semiconductor stru... | 11/07/2006 |
| 7132693 | Self-light-emitting device and method of manufacturing the same Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and formin... | 11/07/2006 |
| 7132706 | Solid-state imaging device A solid-state imaging device is provided which has preferable linearity of signal outputs according to light intensities and does not cause dark defects even at a low light intensity. The solid-state imaging device comprises: a ring gate having a non-uniform width; ... | 11/07/2006 |
| 7132705 | Solid state imaging device and method of driving the same A solid state imaging device including: a photoelectric conversion element generating photo-generated charges corresponding to incident light; an accumulation well accumulating photo-generated charges; a modulation well storing photo-generated charges from the accum... | 11/07/2006 |
| 7130000 | Array substrate of liquid crystal display device and method of fabricating the same An array substrate of a liquid crystal display device includes a substrate, a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel area, a common line parallel to the gate line, a common electrode extendin... | 10/31/2006 |
| 7126158 | Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system An image pickup apparatus or a radiation image pickup apparatus according to the present invention includes: a plurality of pixels which are two-dimensionally arranged on a substrate, each of the plurality of pixels including a set of a semiconductor conversion elem... | 10/24/2006 |
| 7126175 | Semiconductor device including light shieled structures A semiconductor device comprising: a first light shielded region including a first semiconductor element, the first light shielded region being defined by a first light shielding wall provided in the periphery thereof; a second light shielded region including a seco... | 10/24/2006 |
| 7122831 | Method of forming a reflective electrode and a liquid crystal display device The present invention provides a method of forming a TFT and a reflective electrode having recesses or projections with reduced manufacturing cost and a reduced number of manufacturing steps, and provides a liquid crystal display device to which the method is applie... | 10/17/2006 |
| 7122840 | Image sensor with optical guard ring and fabrication method thereof An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substr... | 10/17/2006 |
| 7122844 | Susceptor for MOCVD reactor A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate ... | 10/17/2006 |
| 7118954 | High voltage metal-oxide-semiconductor transistor devices and method of making the same A method for fabricating metal-oxide-semiconductor devices is provided. The method includes forming a gate dielectric layer on a substrate; depositing a polysilicon layer on the gate dielectric layer; forming a resist mask on the polysilicon layer; etching the polys... | 10/10/2006 |
| 7119387 | Solid-state image sensor and method for fabricating the same A solid-state image sensor comprises a semiconductor substrate of a first conductivity type having a color pixel region and a black pixel region; a first well of the first conductivity type formed in the color pixel region; a second well of the first conductivity ty... | 10/10/2006 |
| 7116847 | Method and apparatus for polarization insensitive phase shifting of an optical beam in an optical device An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the firs... | 10/03/2006 |
| 7116366 | CMOS aps pixel sensor dynamic range increase An image sensing device, such as a CMOS Active Pixel Sensor device, including an array of pixels. Each pixel has a photoreceptor, a follower transistor connected to the photoreceptor, a select transistor connected to the follower transistor, and a reset transistor. ... | 10/03/2006 |
| 7115853 | Micro-lens configuration for small lens focusing in digital imaging devices An improved image sensor wherein a first micro-lens array comprised of one or more micro-lenses is positioned over a cavity such that incoming light is focused on the photo sensors of the image sensor. The first micro-lens array may collimate and focus incoming ligh... | 10/03/2006 |
| 7115974 | Silicon oxycarbide and silicon carbonitride based materials for MOS devices In the preferred embodiment, a gate dielectric and an electrode are formed on a substrate. A pair of spacers is formed along opposite sidewalls of the gate electrode and the gate dielectric. Spacers are preferably formed of SiCO based material or SiCN based material... | 10/03/2006 |
| 7115906 | Thin film transistor array and fabricating method thereof A thin film transistor array including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors, an etch barrier layer and a plurality of pixel electrodes is provided. The scan lines and the data lines are disposed over... | 10/03/2006 |
| 7115924 | Pixel with asymmetric transfer gate channel doping A pixel including a substrate of a first conductivity type, a photodetector of a second conductivity type that is opposite the first conductivity type and configured to convert incident light to a charge, a floating diffusion of the second conductivity, and a transf... | 10/03/2006 |
| 7115923 | Imaging with gate controlled charge storage A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obta... | 10/03/2006 |
| 7115925 | Image sensor and pixel having an optimized floating diffusion An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the... | 10/03/2006 |
| 7112462 | Self-light-emitting apparatus and semiconductor device used in the apparatus The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting ... | 09/26/2006 |
| 7112864 | Module for optical device, and manufacturing method therefor A module for an optical device being provided with a wiring substrate having a conductive wiring patterned thereon, a solid-state image sensor, a DSP for controlling the operation of the solid-state image sensor and processing a signal outputted from the same, and a... | 09/26/2006 |
| 7109978 | Object position detector with edge motion feature and gesture recognition A method of generating a signal comprising providing a capacitive touch sensor pad including a matrix of X and Y conductors, developing capacitance profiles in one of an X direction and a Y direction from the matrix of X and Y conductors, determining an occurrence o... | 09/19/2006 |
| 7109571 | Method of forming a hermetic seal for silicon die with metal feed through structure A semiconductor die is formed in a process that forms a trench opening in the semiconductor material prior to the formation of the contacts and the metal-1 layer. When contacts are then formed to contact circuit structures, such as a doped region in the top surface ... | 09/19/2006 |
| 7109537 | CMOS pixel with dual gate PMOS A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS t... | 09/19/2006 |
| 7110629 | Optical ready substrates An article of manufacture comprising an optical-ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer ... | 09/19/2006 |
| 7106373 | Method for increasing dynamic range of a pixel by multiple incomplete reset A method is disclosed for obtaining a read-out signal of a pixel having at least a photosensitive element with a charge storage node. Charge carriers are converted from radiation impinging on the photosensitive element. While acquiring charge carriers on said charge... | 09/12/2006 |
| 7105906 | Photodiode that reduces the effects of surface recombination sites The loss of photogenerated electrons to surface electron-hole recombination sites is minimized by utilizing a first p-type surface region to form a depletion region that functions as a first barrier that repels photogenerated electrons from the surface recombination... | 09/12/2006 |
| 7105878 | Active pixel having reduced dark current in a CMOS image sensor The active pixel includes a photodiode, a reset transistor, and a pixel output transistor. The photodiode is substantially covered with a protective structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential ... | 09/12/2006 |
| 7105872 | Thin film semiconductor element and method of manufacturing the same The invention provides a thin film semiconductor element and a method of manufacturing the same to achieve lowering the resistance of gate electrodes, lowering the capacitance of source electrodes, and enhancing etching characteristics. The thin film semiconductor e... | 09/12/2006 |
| 7105867 | Solid-state imaging device and manufacturing method thereof There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor s... | 09/12/2006 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 7101727 | Passivation planarization A pixel cell is formed by locating a first passivation layer over the final layer of metal lines. Subsequently, the uneven, non-uniform passivation layer is subjected to a planarization process such as chemical mechanical polishing, mechanical abrasion, or etching. ... | 09/05/2006 |
| 7098492 | Thin film transistor having LDD region and process for producing same A thin film transistor display includes a driving circuit and an active matrix. The driving circuit comprises a first thin film transistor structure. The first thin film transistor structure includes a first gate, source and drain regions, a first LDD region, a seco... | 08/29/2006 |
| 7094624 | Active matrix organic electroluminescent display device and fabricating method thereof An active matrix organic electroluminescent display device of the present invention is fabricated through a six-mask process unlike the related art that uses eight masks. In the present invention, since the ground line and the power line are entirely or over substan... | 08/22/2006 |
| 7095439 | Image sensor circuit and method A method and an image sensor circuit (2) for providing a bit stream pulse modulated signal at a controlled bit rate. The image sensor circuit (2) has a two-dimensional array of pixel signal pulse frequency modulators (22) each having a photodiod... | 08/22/2006 |
| 7095440 | Photodiode-type pixel for global electronic shutter and reduced lag Operation for global electronic shutter photodiode-type pixels. In a first mode of operation, lag is reduced through global reset of the photodiode array and fixed pattern noise is eliminated through comparison of the photosignal level and the reset level of the flo... | 08/22/2006 |
| 7095066 | Process for making a CMOS image sensor An image sensor includes a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism; a dielectric spanning the substrate; and a semi-conducting layer, which is less than approximately 1 micrometer, span... | 08/22/2006 |
| 7091536 | Isolation process and structure for CMOS imagers A barrier implanted region of a first conductivity type located below an isolation region of a pixel sensor cell and spaced from a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The barrier implanted region is forme... | 08/15/2006 |
