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| Number | Title | Issue Date |
| 4868405 | Photoelectric converting apparatus having a common region connecting either sources or drains to a common signal line A photoelectric converting apparatus having a plurality of photosensors and a plurality of transistors of the insulative gate type which select the signals from the photosensors and output to a signal line. Source or drain regions which are connected to t... | 09/19/1989 |
| 4866291 | Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film An image photosensor includes a photosensor unit a charge storage unit, and a switch unit, all of which are formed on a single-crystal semiconductor film grown from a single nucleus such that crystal formation is performed on a substrate having a free sur... | 09/12/1989 |
| 4860073 | Solid state imaging apparatus An array of charge storage devices each including a pair of closely coupled conductor-insulator-semiconductor capacitors or cells, one a row line connected cell and the other a column line connected cell, is provided on a common semiconductor substrate. T... | 08/22/1989 |
| 4857981 | Semiconductor imaging device A semiconductor imaging device includes lateral MOS static induction transistors including: a semiconductor layer formed on an insulating substrate or a high-resistance semiconductor substrate; and picture elements arranged in the form of a matrix over th... | 08/15/1989 |
| 4841349 | Semiconductor photodetector device with light responsive PN junction gate A semiconductor photodetector device comprises an insulating gate field effect transistor having a gate in which a PN junction (J) is formed on an insulating layer. The gate is formed of a gate electrode (14) of P+ -type single crystalline sili... | 06/20/1989 |
| 4829354 | Drift field switch A drift field switch incorporating a layer of semiconductor material having a first conductivity type, two spaced apart regions having the same conductivity type or a second conductivity type which function as summing buses, a layer of resistive material ... | 05/09/1989 |
| 4827146 | Photoelectric conversion element image sensor with combined field effect transistor having compact size A photoelectric conversion device is disclosed which comprises a large number of photoelectric conversion elements arranged in an array on a substrate and thin film transistors individually corresponding to the photoelectric conversion elements and arrang... | 05/02/1989 |
| 4819071 | Solid state imaging apparatus A solid state imaging apparatus includes an internal amplification type of light-receiving element which constitutes a picture element, a signal processing circuit incorporating a pre-amplifier for processing a video signal current of the light-receiving ... | 04/04/1989 |
| 4799094 | Large-format photosensitive device and a method of utilization A large-format photosensitive device for detection of radiographic images comprises a semiconductor substrate of lightly n-doped hydrogenated amorphous silicon. On one face of the substrate are supported rectangular picture frame-like pads disposed in a m... | 01/17/1989 |
| 4780394 | Photosensitive semiconductor device and a method of manufacturing such a device A photosensitive semiconductor device is provided comprising transparent gates, whose side walls are made from silicide and which, apart from these side walls, are formed from polycrystalline silicon.... | 10/25/1988 |
| 4751560 | Infrared photodiode array A mercury-cadmium-telluride photodiode array detector having a composite structure which includes a p-type HgCdTe substrate, a surface of which is implanted with n-type regions, thereby forming individual photodiodes of the array. Overlying this surface i... | 06/14/1988 |
| 4737832 | Optical signal processor An optical signal processor which comprises a phototransistor for receiving optical signals and an input for receiving external electrical signals, a plurality of base regions connected, respectively, to the phototransistor and the input, for accumulating... | 04/12/1988 |
| 4735908 | Process for fabricating solid-state imaging device A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer... | 04/05/1988 |
| 4733286 | Semiconductor photoelectric converting device A semiconductor photoelectric converting device for use in a solid state image sensor includes an insulating substrate, an n- epitaxial layer formed on the substrate, n+ source and drain regions formed by diffusing n type impurities ... | 03/22/1988 |
| 4731640 | High resistance photoconductor structure for multi-element infrared detector arrays A high resistance, low noise, multi-layer, thin film photoconductive, infrared detector operable to be easily coupled to charge couple devices; having an enhanced photoconductive gain due to the use of a bias voltage across a depletion layer of n-doped Hg... | 03/15/1988 |
| 4729005 | Method and apparatus for improved metal-insulator-semiconductor device operation An improved method and apparatus for reducing edge field enhancement in semiconductor devices such as metal-insulator-semiconductor devices is disclosed. The method comprises the step of biasing a buffer gate which overlies an insulation layer and an area... | 03/01/1988 |
| 4727406 | Pre-multiplexed detector array Disclosed is a detector array for sensing electromagnetic radiation, which is based upon a semiconducting layer of a first conductivity type with an array of junction regions of a second conductivity type located in a major surface thereof. A first insula... | 02/23/1988 |
| 4719499 | Semiconductor imaging device A semiconductor imaging device employing SIT (Static Induction Transistor) pixels having in the control gate region of each pixel a capacitor having optimum properties. Each pixel is constituted by an SIT having a pair of principal electrode regions of on... | 01/12/1988 |
| 4686554 | Photoelectric converter A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n+ collector region an n- region disposed contiguous to the collector region, a p bas... | 08/11/1987 |
| 4686555 | Solid state image sensor A solid state image sensor comprising static induction transistors each forming a picture element. Each static induction transistor in the solid state image sensor has a lateral structure in which the source and drain regions are formed by surface regions... | 08/11/1987 |
| 4684968 | JFET imager having light sensing inversion layer induced by insulator charge A solid state imaging element includes a semiconductor body consisting of a substrate of n+ conductivity type forming a drain region and of an epitaxial layer of n- conductivity type. In a surface of the epitaxial layer is a source r... | 08/04/1987 |
| 4682203 | Solid-state image pickup device with photographic sensitivity characteristics A solid-state image pickup device having photosensitive cells disposed on a semiconductor substrate of a first conductivity type. The photosensitive cells include phototransistors for generating photocarriers associated with light incident thereto to stor... | 07/21/1987 |
| 4677453 | Solid state image sensor In a solid state image sensor including a plurality of light receiving elements in a matrix manner, each light receiving element is composed of a static induction transistor having a MOS gate construction formed on a surface of a semiconductor substrate a... | 06/30/1987 |
| 4670765 | Semiconductor photodetector element A semiconductor photodetector element has a three-dimensional multi-layer structure including a photoconductive layer for photoelectric conversion, a layer for binary conversion and amplification and a layer including a redundancy circuit so that the need... | 06/02/1987 |
| 4626915 | MOS solid-state image pickup device having vertical overflow drains A MOS solid-state image pickup device having vertical overflow drains is capable of increasing the dynamic range for the brightness of a scene to be picked up. An electronic still picture camera is constructed by the image pickup device in combination wit... | 12/02/1986 |
| 4611223 | Solid-state image sensor and manufacturing process thereof A solid-state image sensor comprises an n-type silicon substrate (11), a p-type silicon layer (12) formed on the substrate (11), a plurality of nMOS transistors (1), a field insulating film (13) for separating the nMOS transistors (1) and a buried insulat... | 09/09/1986 |
| 4598305 | Depletion mode thin film semiconductor photodetectors A depletion mode thin film semiconductor photodetector comprises a crystalline silicon thin film on an insulating substrate with a source region, a drain region and a thin film light sensing channel region formed therebetween. A gate oxide formed over the... | 07/01/1986 |
| 4591916 | Solid state image pickup device A solid state image pickup device comprises first switching elements (S'11 to S'mn) arrayed in horizontal and vertical rows and composed of a plurality of P-channel insulated-gate field-effect transistors, the first switching element... | 05/27/1986 |
| 4589027 | Solid state image sensor A solid state image sensor including a number of pixels each of which has a source region, a drain region and a signal readout gate electrode having a portion formed between the source and drain regions, a light receiving gate electrode formed separately ... | 05/13/1986 |
| 4571607 | Semiconductor device The capacity of a capacitor constituted by a metal-insulator-semiconductor layer configuration varies depending on the quantity of electric charge staying in the neighborhood of the interface between the insulating layer and the semiconductor layer. Becau... | 02/18/1986 |
| 4571626 | Solid state area imaging apparatus A solid state area imaging apparatus has a single crystalline high resistivity region formed by epitaxial growth on the surface of a semiconductor substrate, whereon opto-electro functionless parts of picture elements to accumulate (or store) signal charg... | 02/18/1986 |
| 4562474 | Semiconductor image sensor A semiconductor image sensor which has photocells arranged in a matrix form is miniaturized and integrated with high density, thereby to increase its light amplification factor and operating speed. To this end, each photocell is formed by a static inducti... | 12/31/1985 |
| 4556909 | Solid state image sensing device having a number of static induction transistors arranged in a matrix form A solid state image sensing device having a number of static induction transistors (SIT) arranged in a matrix form, sources of SITs arranged in each column being commonly connected to respective column line which is connected to a video line via respectiv... | 12/03/1985 |
| 4551742 | Solid-state imaging device A solid-state imaging device is provided with picture elements which are each composed of a photoelectric conversion element and a MOS transistor as a switching element and which are arranged in the form of a matrix. A scanning mechanism sequentially scan... | 11/05/1985 |
| 4549088 | Original reading device An original reading device including a light-receiving element composed of a substrate having in sequence a plurality of underlying electrodes, a photoconductor and a transparent conductive overlying electrode. A signal from the light-receiving element is... | 10/22/1985 |
| 4532536 | Photo-electric transducer A photo-electric transducer comprises a photo-electric transducing element which includes a semiconductor layer formed of a photosensitive semiconductor material; first and second gate electrodes juxtaposed on the semiconductor layer through an insulating... | 07/30/1985 |
| 4488165 | Extrinsic infrared detector with a charge reset function A preferred embodiment of the invention is a three-gate charge-coupled device (CCD) which is designed to operate at cryogenic temperatures (circa 1-20° K). For an N channel device, a low-concentration N type material is separated from a P type substrate ... | 12/11/1984 |
| 4456929 | Solid state image pick-up apparatus In a solid state image pick-up device of the type comprising a first semiconductor layer including a photoelectric conversion element array, and vertical and horizontal switching elements adapted to select the photoelectric conversion elements, a second s... | 06/26/1984 |
| 4450465 | Radiation transmissive electrode structure In semiconductor imaging apparatus a composite electrode structure which transmits a high percentage of the radiation incident thereon and which also has high electrical conductivity is provided as the first level of a two level electrode structure.... | 05/22/1984 |
| 4429330 | Infrared matrix using transfer gates An infrared random access imager system is disclosed which includes a scanning mechanism, a random access imager detector matrix, and a video signal processor. The scanning mechanism scans the infrared energy emanating from a scene in the field-of-view. T... | 01/31/1984 |
