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| Number | Title | Issue Date |
| 7812380 | Solid-state imaging device and manufacturing method of the same A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above ... | 10/12/2010 |
| 7812381 | Image sensor with light receiving region having different potential energy according to wavelength of light and electronic product employing the same There is provided a CMOS image sensor and an electronic product using the same. The CMOS image sensor includes a plurality of pixels for embodying colors having different wavelengths. Each of pixels includes a buried barrier layer disposed in a semiconductor substra... | 10/12/2010 |
| 7804116 | Solid-state imaging device A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fix... | 09/28/2010 |
| 7804115 | Semiconductor constructions having antireflective portions In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photo... | 09/28/2010 |
| 7800144 | Solid state imaging apparatus and method for fabricating the same A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-c... | 09/21/2010 |
| 7791115 | Organic light emitting display device Disclosed is an organic light emitting display, which includes a large quantity of a hydroscopic layer having a good hydroscopic ability by changing a mounting structure of the hydroscopic layer. An organic light emitting display includes a first substrate. An organ... | 09/07/2010 |
| 7772623 | CMOS image sensor and method for fabricating the same A CMOS image sensor and fabricating method can reduce leakage current of a photodiode reduced by configuring a triangular shape of a photodiode area to minimize an interface contacting the STI or performing deuterium annealing to remove dangling bonds from an interf... | 08/10/2010 |
| 7768045 | CMOS image device with polysilicon contact studs A CMOS image device comprises a pixel array region including a photo diode region, a floating diffusion region, and at least one MOS transistor having a gate and a junction region, a CMOS logic region disposed around the pixel array region, the CMOS logic region inc... | 08/03/2010 |
| 7755118 | Solid-state image pick-up device and imaging system using the same The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type re... | 07/13/2010 |
| 7755116 | Method and apparatus for controlling charge transfer in CMOS sensors with an implant by the transfer gate An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 07/13/2010 |
| 7755117 | Light sensors with infrared suppression Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response ... | 07/13/2010 |
| 7741664 | Complementary metal oxide semiconductor image sensor and method for fabricating the same Provided are a CMOS image sensor and a method for fabricating the same. A nanopillar is plurally formed at an upper end of a light receiving element. ... | 06/22/2010 |
| 7732843 | Solid state image sensor Forming an impurity region 6 and an impurity region 5 having a lower concentration than the impurity region 6 in a lower layer region of a gate electrode close to the boundary with a signal electron-voltage conversion section of a horizontal CCD... | 06/08/2010 |
| 7723763 | Color photodetector apparatus with multi-primary pixels The invention discloses the color photodetector with multi-primary is introduced to detect the incident light with specific wavelength regimes. Combining the surface plasma resonance effect with photodetector can be utilized to enhance the photo-responsivity of the ... | 05/25/2010 |
| 7714368 | Method and apparatus providing imager pixel array with grating structure and imager device containing the same An imager pixel array capable of separating and detecting the spectral components of an incident light without the use of a color filter array. The imager pixel array employs a grating layer which allows one or more spectral components of incident light to be transm... | 05/11/2010 |
| 7709869 | Photoelectric conversion device, method of manufacturing the same, and image sensing system A photoelectric conversion device comprises a photoelectric conversion unit, a floating diffusion region, a transfer transistor, and an output unit. A control electrode of the transfer transistor includes a first portion which extends along a channel width direction... | 05/04/2010 |
| 7696543 | Solid-state imaging device In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation re... | 04/13/2010 |
| 7696544 | Solid-state image sensing device and manufacturing method thereof Pixel portions each of which has a charge storage portion formed in a semiconductor substrate 11 and a transfer gate for transferring charges stored in the charge storage portion are isolated from each other by a device isolation region in the semiconductor s... | 04/13/2010 |
| 7687836 | Capacitance noise shielding plane for imager sensor devices A conductive shield plane electrically isolating the photodiode regions from metal interconnect lines in an imager sensor device. ... | 03/30/2010 |
| 7679112 | Color image sensors having pixels with cyan-type and yellow-type color characteristics therein Color image sensors include pixels having varying color characteristics. One of the pixels is a cyan-type pixel, which includes primary and secondary photodetectors therein. The primary photodetector extends adjacent a portion of a surface of a semiconductor substra... | 03/16/2010 |
| 7663168 | Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a seco... | 02/16/2010 |
| 7663167 | Split transfer gate for dark current suppression in an imager pixel A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a cha... | 02/16/2010 |
| 7652312 | CMOS image sensor A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrica... | 01/26/2010 |
| 7646047 | Solid-state imaging device and method for manufacturing the same The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer. Light enters from the rear-surface side opposite to the front-surface side of the silicon la... | 01/12/2010 |
| 7638826 | Imaging device and imaging system An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding t... | 12/29/2009 |
| 7635883 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed... | 12/22/2009 |
| 7633104 | CMOS image sensor Embodiments relate to a vertical-type CMOS image sensor, a method of manufacturing the same, and a method of gettering the same, in which source and drain regions are expanded to improve grounding and gettering effects. In embodiments, the vertical-type CMOS image s... | 12/15/2009 |
| 7619266 | Image sensor with improved surface depletion An image sensor device having a pixel cell with a pinned photodiode, which utilizes the fixed charge of an high K dielectric layer over the n-type region for the pinning effect without implanting a p-type layer over the n-type region, and methods of forming such a d... | 11/17/2009 |
| 7608871 | Solid image pick-up element with a single layer electrode structure and method of producing the same A solid image pick-up element comprises: a photoelectric converting portion; a charge transmitting portion comprising a charge transmitting electrode that transmits a charge generated by the photoelectric converting portion; and a peripheral circuit portion connecte... | 10/27/2009 |
| 7608872 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial l... | 10/27/2009 |
| 7605415 | Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoel... | 10/20/2009 |
| 7598552 | Image sensor having improved sensitivity and method of manufacturing the same In an image sensor in which a vertical length from a photoelectric conversion element to an uppermost micro-lens is minimal, and a method of manufacturing the same, the image sensor includes a substrate, a plurality of photoelectric conversion elements, and first to... | 10/06/2009 |
| 7592654 | Reduced crosstalk CMOS image sensors CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels ext... | 09/22/2009 |
| 7586138 | Image sensor and method of forming the same An image sensor includes a semiconductor substrate, a photo receiving area in the semiconductor substrate, a gate electrode installed in a lateral side of the photo receiving area on the semiconductor substrate, and a patterned dielectric layer covering the gate ele... | 09/08/2009 |
| 7550797 | Photoelectric conversion layer stack type color solid-state image sensing device A color solid-state image sensing device comprising unit cells arranged two-dimensionally in a surface of a silicon substrate, each unit cell including a blue pixel provided as defined herein, a red pixel as defined herein and a green pixel as defined herein, wherei... | 06/23/2009 |
| 7538372 | Twin p-well CMOS imager A CMOS imager which includes a substrate voltage pump to bias a doped area of a substrate to prevent leakage into the substrate from the transistors formed in the doped area. The invention also provides a CMOS imager where a photodetector sensor array is formed in a... | 05/26/2009 |
| 7531857 | Image sensor with buried barrier layer having different thickness according to wavelength of light and method of forming the same There is provided an image sensor and a method of forming the same in order to prevent cross talk and to improve sensitivity. The image sensor includes a plurality of pixels for embodying colors having different wavelengths, and each of pixels includes a photoelectr... | 05/12/2009 |
| 7521742 | Complementary metal oxide semiconductor (CMOS) image sensor An improved complementary metal oxide semiconductor (CMOS) image sensor which may decrease the occurrence of dark current is provided. The CMOS image sensor includes a plurality of isolation regions formed in a substrate and a first impurity-doped region formed betw... | 04/21/2009 |
| 7518170 | Back illuminated imaging device A back illuminated imaging device 1 comprises a plurality charge blocking regions 19 which are arranged on a front surface 12 side, embedded in CCD charge transferring paths 21, and in which a first thickness T1 measured from the front su... | 04/14/2009 |
| 7495272 | Semiconductor device having photo sensor element and amplifier circuit The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using ... | 02/24/2009 |
