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| Number | Title | Issue Date |
| 7038259 | Dual capacitor structure for imagers and method of formation CMOS and CCD imaging devices comprising different in-pixel capacitors and peripheral capacitors and methods of formation are disclosed. The capacitors used in periphery circuits have different requirements from the capacitors used in the pixel itself. Dual stack cap... | 05/02/2006 |
| 7038242 | Amorphous semiconductor open base phototransistor array An array of light-sensitive sensors utilizes bipolar phototransistors that are formed of multiple amorphous semiconductor layers, such as silicon. In the preferred embodiment, the bipolar transistors are open base devices. In this preferred embodiment, the holes tha... | 05/02/2006 |
| 7030919 | Solid state image pick-up device The solid state image pick-up device comprises a chip wherein an object to be photographed is put directly on the back surface of the chip, a light incident on the object enters the inner portion of the chip, signal electric charges generated in the inner portion of... | 04/18/2006 |
| 7030904 | Reduced area imaging device incorporated within wireless endoscopic devices A reduced area imaging device is provided for use in medical or dental instruments such as an endoscope. In a first embodiment of the endoscope, connections between imaging device elements and between a video display is achieved by hard-wired connections. In a secon... | 04/18/2006 |
| 7030385 | Radiation detecting apparatus and method of driving the same A radiation detecting apparatus including a plurality of pixels, each pixel including a conversion element configured to convert radiation into an electric signal, a resetting element configured to reset the conversion element by applying a predetermined voltage to ... | 04/18/2006 |
| 7030433 | Solid-state imaging device and method of manufacturing the same A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode regions; a N-type drain region positioned adjacent to the other edge of ... | 04/18/2006 |
| 7030434 | Arrangement with image sensors A memory transistor and a selection transistor of an image sensor are connected in series and between a bit line (B5) and a reference line (R5). A gate electrode of the selection transistor is connected to a word line (W5), which extends crosswi... | 04/18/2006 |
| 7027043 | Wiring substrate connected structure, and display device A TFT substrate having formed thereon source bus lines and a source GS substrate having formed thereon source output wirings are respectively provided with a panel side auxiliary line and a driver side auxiliary line, each being provided so as to cross the source bu... | 04/11/2006 |
| 7026625 | Radiation detection apparatus and system The invention is to provide a radiation detection apparatus adapted for taking a moving image. The radiation detection apparatus has a pixel including a phosphor for converting radiation into light, a photoelectric conversion unit for converting the light converted ... | 04/11/2006 |
| 7023035 | [Thin film transistor array substrate and repairing method thereof] A thin film transistor (TFT) array substrate including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors, a plurality of pixel electrodes and a repairing circuit is provided. The scan lines and the data lines are... | 04/04/2006 |
| 7023034 | Solid-state imaging device with improved image sensitivity The solid-state imaging device according to the present invention comprises: a plurality of light-sensitive elements 1 arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate; a plurality of detecting ele... | 04/04/2006 |
| 7022997 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first elect... | 04/04/2006 |
| 7019345 | Photodiode CMOS imager with column-feedback soft-reset for imaging under ultra-low illumination and with high dynamic range The present invention provides a CMOS imager with a reset scheme, by which a CMOS imager generates a sub-kTC noise so that read noise does not depend on the sense node capacitance. By using a column feedback circuit, reset noise can be suppressed to a negligible amo... | 03/28/2006 |
| 7015509 | Electrooptic device and electronic apparatus An electrooptic-device substrate includes a first IC-mounting area on which a first IC is mounted following a substrate edge of the electrooptic-device substrate, at least one second IC-mounting area on which a second IC is mounted, and a substrate-connection area t... | 03/21/2006 |
| 7012646 | Reset driver circuit disposed on the same substrate as the image sensor A charge-coupled device for forming an electronic representation of an image from incident light, the charge-coupled device includes a substrate of a first type; a photosensitive area of a second type disposed in the substrate for receiving the incident light which ... | 03/14/2006 |
| 7009649 | Solid-state image sensor device and solid-state image sensor apparatus including same A solid-state image sensor device comprises a photoelectric converter for converting incident light to electric charge, a logarithmic converter for logarithmically converting a photoelectric current output from the photoelectric converter, the logarithmic converter ... | 03/07/2006 |
| 7009206 | Thin film transistor array panel and liquid crystal display including the panel A thin film transistor array panel is provided, which includes: a plurality of gate lines formed on a substrate and including a plurality of oblique portions and a plurality of gate electrodes; a first insulating layer on the gate line; a semiconductor layer formed ... | 03/07/2006 |
| 7008816 | Imager photo diode capacitor structure with reduced process variation sensitivity A pixel cell having two capacitors connected in series where each capacitor has a capacitance approximating that of the periphery capacitors and such that the effective capacitance of the series capacitors is smaller than that of each of the periphery capacitors. Th... | 03/07/2006 |
| 7005690 | Solid-state image sensor The solid-state image sensor includes a pixel part 10, an analog circuit part 12, a digital circuit part 14 and an input/output circuit part 16. The digital circuit part 14 includes a first well 42c of a second conduc... | 02/28/2006 |
| 7005689 | Image sensor and method of fabricating the same Image sensors and methods of fabricating the same are provided. The image sensor includes a blocking pattern disposed on photodiodes. The blocking pattern is formed of insulation material having a metal diffusion coefficient which is lower than a silicon oxide diffu... | 02/28/2006 |
| 7005647 | Photoelectric converter and radiation reader A photoelectric conversion apparatus having (i) a photoelectric conversion device for converting an incident light into an electric charge and (ii) a reading circuit including at least one thin film transistor for amplifying a signal from the photoelectric conversio... | 02/28/2006 |
| 7002626 | Image sensor with motion artifact supression and anti-blooming An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias s... | 02/21/2006 |
| 7002235 | Semiconductor device A semiconductor device has a semiconductor support substrate, a buried insulation film disposed on the semiconductor support substrate, and a single-crystal silicon active layer disposed on the buried insulation film. The buried insulation film has portions which ha... | 02/21/2006 |
| 6999060 | Liquid crystal display and fabricating method thereof Disclosed are a liquid crystal display and a fabricating method thereof enabling to improve an opening ratio of the liquid crystal display by modifying a structure of a thin film transistor. Each pixel of the liquid crystal display includes a gate line formed on a s... | 02/14/2006 |
| 6998660 | Vertical color filter sensor group array that emulates a pattern of single-layer sensors with efficient use of each sensor group's sensors An array of vertical color filter (VCF) sensor groups, each VCF sensor group including at least two vertically stacked, photosensitive sensors. Preferably, the array is fabricated, or the readout circuitry is configured (or has a state in which it is configured), to... | 02/14/2006 |
| 6998657 | Single poly CMOS imager More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge... | 02/14/2006 |
| 6995376 | Silicon-on-insulator latch-up pulse-radiation detector A radiation detector formed using silicon-on-insulator technology. The radiation detector includes a silicon layer formed on an insulating substrate, wherein the silicon layer includes a PNPN structure, and a gate layer formed over the PNPN structure, wherein the ga... | 02/07/2006 |
| 6995373 | Semiconductor device, radiation detection device, and radiation detection system By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process. A gate line Vg4... | 02/07/2006 |
| 6992341 | Amplifying solid-state image pickup device There is provided an amplifying solid-state image pickup device capable of improving S/N and maintaining a charge-voltage conversion efficiency high. In the amplifying solid-state image pickup device, signal charges of a plurality of photodiodes 1 are added u... | 01/31/2006 |
| 6989589 | Programmable sensor array A programmable sensor array (1) having a plurality of programmable cells (2). Each of the cells (2) comprises a programmable module (4) and a sensor element(6) operatively coupled to the programmable module. There is also an analog... | 01/24/2006 |
| 6987537 | Image pickup system with MOS sensors and microlenses The image pickup system includes: MOS sensors arranged in an image pickup region of a semiconductor substrate in the form of a matrix and having photoelectric transfer layers; a peripheral circuit part formed in a region of the semiconductor substrate except for the... | 01/17/2006 |
| 6984856 | Infrared ray detecting type imaging device An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed ... | 01/10/2006 |
| 6982443 | Hollow dielectric for image sensor A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least on... | 01/03/2006 |
| 6979587 | Image sensor and method for fabricating the same The present invention provides an image sensor capable of suppressing the dark current due to crystalline defects occurring at an edge of a field oxide layer and a method for fabricating the same. The present invention provides an image sensor including: a semicondu... | 12/27/2005 |
| 6979840 | Thin film transistors having anodized metal film between the gate wiring and drain wiring A thin-film semiconductor device or integrated circuit comprising an insulating substrate, TFTs (thin-film transistors) formed on the substrate, and multilayer conductive interconnections. The circuit has a first metallization layer becoming gate electrodes and gate... | 12/27/2005 |
| 6977684 | Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus In an image sensing apparatus having a plurality of unit cells, each including a plurality of photoelectric conversion elements and a common circuit shared by the plurality of photoelectric conversion elements, arranged in either one or two dimensions, the plurality... | 12/20/2005 |
| 6974715 | Method for manufacturing CMOS image sensor using spacer etching barrier film A method for fabricating a CMOS image sensor including a low voltage buried photodiode and a transfer transistor, includes the steps of: forming a field oxide for defining active area and field area on certain area of an epitaxial layer formed on a substrate, and fo... | 12/13/2005 |
| 6974973 | Apparatus for determining temperature of an active pixel imager and correcting temperature induced variations in an imager An imager temperature sensor and a current correction apparatus are provided which use dark pixel measurements from an imager chip during operation together with a fabrication process constant as well as a chip dependent constant to calculate chip temperature. The c... | 12/13/2005 |
| 6974975 | Solid-state imaging device, method for driving solid-state imaging device, and method for processing image signal A solid-state imaging device comprising: a semiconductor substrate having a first surface; and a plurality of light-receiving sections arranged in an array pattern on the first surface of the semiconductor substrate, the solid-state imaging device reading a stored e... | 12/13/2005 |
| 6974980 | Solid-state imaging device A solid-state imaging device having, in each of unit pixels, an on-chip microlens composed of plural convex lens parts for each of photoelectric conversion elements provided on a semiconductor chip is disclosed. A floating diffusion part and a signal-charge read gat... | 12/13/2005 |
