Class 257/291 - Imaging array

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter comprising a one or more dimensional array
No. of patents: 880
Last issue date: 02/14/2012

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Number	Title	Issue Date
8115241	Solid state imaging apparatus and method for fabricating the same A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-c...	02/14/2012
8063422	Image detection apparatus and methods MOS imaging pixels are described. The MOS imaging pixels may comprise bootstrapped source followers, having their bodies connected to their sources. The source followers of the MOS imaging pixels may be used to buffer a signal indicative of an amount of radiation in...	11/22/2011
8049255	Display device and method of manufacturing the same A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the ...	11/01/2011
8017983	Solid-state imaging device In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation re...	09/13/2011
8017982	Imagers with contact plugs extending through the substrates thereof and imager fabrication methods Methods for fabricating photoimagers, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating image sensing elements, transistors, and other low-elevation features on an active surface of a fabrication substrate, and fabricating contact p...	09/13/2011
8013370	Solid-state imaging device A solid-state imaging device has a substrate in which are formed a pixel array portion having a plurality of pixels, and a peripheral circuitry portion. The device is characterized in that a first multilevel metallization structure is formed over the peripheral circ...	09/06/2011
8004026	Solid-state imaging device In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation re...	08/23/2011
7960765	Method and apparatus for providing an integrated circuit having p and n doped gates A method and apparatus providing an integrated circuit having a plurality of gate stack structures having gate oxide layers with differing thicknesses and nitrogen concentrations and gate electrodes with differing conductivity types and active dopant concentrations....	06/14/2011
7960766	Light sensors with infrared suppression Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response ...	06/14/2011
7952123	Thin film transistor substrate and display device A thin-film transistor substrate in which an aluminum alloy film composing a source/drain wiring is directly connected with a transparent electrode. The thin-film transistor substrate includes a gate wiring, and source wiring and drain wiring, the gate wiring and th...	05/31/2011
7943975	Image pickup device A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconduct...	05/17/2011
7943976	CMOS image sensor and manufacturing method thereof A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate respectively positioned between the gate electrodes and the isolation regions, ...	05/17/2011
7928483	Semiconductor device and method for manufacturing same A hard mask material film is formed on a semiconductor substrate and a recess is formed immediately below an opening in an upper surface of the semiconductor substrate. Next, a p-type region is formed immediately below the recess by implanting impurities into an ima...	04/19/2011
7915652	Integrated infrared and color CMOS imager sensor An integrated infrared (IR) and full color complementary metal oxide semiconductor (CMOS) imager array is provided. The array is built upon a lightly doped p doped silicon (Si) substrate. Each pixel cell includes at least one visible light detection pixel and an IR ...	03/29/2011
7888714	Semiconductor device and method of manufacturing the same Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object ...	02/15/2011
7884400	Image device and method of fabricating the same An image device and a method of fabricating the image device include a substrate pattern formed to define an opening and to include a portion of a photodiode for receiving light. Stacked metal interconnection patterns and an interlayer dielectric layer are formed be...	02/08/2011
7880203	Semiconductor device, electro-optical device, electronic apparatus, method for manufacturing semiconductor device, method for manufacturing electro-optical device, and method for manufacturing electronic apparatus The invention provides, as an aspect thereof, a semiconductor device that includes: a substrate; an underlying insulation film that is formed over the substrate; and a plurality of thin-film transistors that is formed over the underlying insulation film, each of the...	02/01/2011
7872286	Image pickup device, its control method, and camera An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit ...	01/18/2011
7872287	Solid-state imaging device It is an object of the present invention to provide an image sensor having a high ratio of a surface area of a light receiving element to a surface area of one pixel. The above-described object is achieved by an inventive solid-state imaging device unit comprising s...	01/18/2011
7868365	Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a seco...	01/11/2011
7863659	MOS type solid-state image pickup apparatus with wiring layers of different line-width and thickness A MOS type solid-state image pickup apparatus comprises: a semiconductor substrate having a light receiving surface; a plurality of photoelectric conversion elements arranged in an array manner on the light receiving surface; a plurality of layers of wirings that go...	01/04/2011
7851837	Light-collecting device and solid-state imaging apparatus A solid-state imaging apparatus includes unit pixels arranged in a two-dimensional array. Each unit pixel includes a light-collector and light-receiver. The light-collector includes light-transmitting films that form a refractive index distribution and multiple zone...	12/14/2010
7842985	CMOS image sensor Disclosed is a CMOS image sensor including a gate electrode of a finger type transfer transistor for controlling the saturation state of a floating diffusion region according to the luminance level (i.e. low luminance or high luminance). The CMOS image sensor includ...	11/30/2010
7842986	Solid-state imaging device and method for fabricating the same related application data A solid-state imaging device having a plurality of light-receiving sections which are disposed in a substrate and which generate charge in response to incident light, a planarizing layer which covers predetermined elements disposed on the substrate to perform planar...	11/30/2010
7838917	CMOS image sensor and method of fabricating the same A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the dev...	11/23/2010
7825443	Semiconductor constructions In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photo...	11/02/2010
7821046	Methods, structures and sytems for an image sensor device for improving quantum efficiency of red pixels A method and structure for providing a high energy implant in only the red pixel location of a CMOS image sensor. The implant increases the photon collection depth for the red pixels, which in turn increases the quantum efficiency for the red pixels. In one embodime...	10/26/2010
7816713	CMOS image sensor having thiophene derivatives Provided is a CMOS image sensor that uses thiophene derivatives. The CMOS image sensor includes first through third photoelectric conversion units vertically and sequentially stacked on a semiconductor substrate. The first photoelectric conversion unit detects blue ...	10/19/2010
7816712	Thin film transistor array and method of manufacturing the same A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electr...	10/19/2010
7816711	Solid-state imaging device A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fix...	10/19/2010
7812381	Image sensor with light receiving region having different potential energy according to wavelength of light and electronic product employing the same There is provided a CMOS image sensor and an electronic product using the same. The CMOS image sensor includes a plurality of pixels for embodying colors having different wavelengths. Each of pixels includes a buried barrier layer disposed in a semiconductor substra...	10/12/2010
7812380	Solid-state imaging device and manufacturing method of the same A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above ...	10/12/2010
7804115	Semiconductor constructions having antireflective portions In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photo...	09/28/2010
7804116	Solid-state imaging device A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fix...	09/28/2010
7800144	Solid state imaging apparatus and method for fabricating the same A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-c...	09/21/2010
7791115	Organic light emitting display device Disclosed is an organic light emitting display, which includes a large quantity of a hydroscopic layer having a good hydroscopic ability by changing a mounting structure of the hydroscopic layer. An organic light emitting display includes a first substrate. An organ...	09/07/2010
7772623	CMOS image sensor and method for fabricating the same A CMOS image sensor and fabricating method can reduce leakage current of a photodiode reduced by configuring a triangular shape of a photodiode area to minimize an interface contacting the STI or performing deuterium annealing to remove dangling bonds from an interf...	08/10/2010
7768045	CMOS image device with polysilicon contact studs A CMOS image device comprises a pixel array region including a photo diode region, a floating diffusion region, and at least one MOS transistor having a gate and a junction region, a CMOS logic region disposed around the pixel array region, the CMOS logic region inc...	08/03/2010
7755116	Method and apparatus for controlling charge transfer in CMOS sensors with an implant by the transfer gate An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ...	07/13/2010
7755118	Solid-state image pick-up device and imaging system using the same The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type re...	07/13/2010

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Class 257/291 - Imaging array