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Behavior Modification Wristwatch
A wristwatch including a watch band and a watch body having an octagon shaped perimeter and being red in color and having the word STOP thereon to resemble a stop sign.
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| Number | Title | Issue Date |
| 8188523 | Insulated gate field effect transistor and method of manufacturing same, and image pickup device and method of manufacturing same An insulated gate field effect transistor, a solid-state image pickup device using the same, and manufacturing methods thereof that suppress occurrence of a shutter step and suppress occurrence of punch-through and injection. An insulated gate field effect transisto... | 05/29/2012 |
| 8063421 | Thin film transistor having a graded metal oxide layer Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being forme... | 11/22/2011 |
| 8058675 | Semiconductor device and electronic device using the same To provide a semiconductor device which can detect low illuminance. A photoelectric conversion element, a diode-connected first transistor, and a second transistor are included. A gate of the first transistor is electrically connected to a gate of the second transis... | 11/15/2011 |
| 8044443 | Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous sil... | 10/25/2011 |
| 8039881 | Deuterated structures for image sensors and methods for forming the same A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device. ... | 10/18/2011 |
| 8035142 | Deuterated structures for image sensors and methods for forming the same A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device. ... | 10/11/2011 |
| 8022449 | Photodiode array, method of manufacturing the same, and detecting device A photodiode array includes a p-side electrode provided on each p-type region formed by selective diffusion and an n-side electrode connected to a non-growth part of an InP substrate and extends to the top surface side of an epitaxial multilayer. A wall surface of a... | 09/20/2011 |
| 8013369 | Photoelectric conversion apparatus and imaging system using photoelectric conversion apparatus A photoelectric conversion apparatus includes a photoelectric conversion unit with a semiconductor region of a first conduction type, an amplifying transistor, and a contact. The contact supplies, via a semiconductor region of a second conduction type arranged along... | 09/06/2011 |
| 8008694 | Brightness enhancement method and apparatus of light emitting diodes A light source with enhanced brightness includes an angle-selective optical filter and a light emitting diode (LED) having a high reflective layer. The angle-selective filter is located on the top surface of emitting diode to pass lights at specified angles. Accordi... | 08/30/2011 |
| 8004025 | Light sensing element, array substrate having the same and liquid crystal display apparatus having the same In a light sensing element having simplified structure, an array substrate having the light sensing element and an LCD apparatus having the light sensing element, the light sensing element includes a first electrode, a control electrode and a second electrode. An al... | 08/23/2011 |
| 7982251 | Device for detecting/storing electromagnetic beams, method for making same, and use thereof and imager incorporating same The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact elec... | 07/19/2011 |
| 7968922 | Semiconductor apparatus, solid state image pickup device using the same, and method of manufacturing them The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity... | 06/28/2011 |
| 7868364 | Image sensor Embodiments relate to and image sensor. In embodiments, the image sensor may include a semiconductor substrate, a photodiode region, a gate electrode, a dummy gate, and an interlayer dielectric layer. The semiconductor substrate includes a field oxide layer. The pho... | 01/11/2011 |
| 7859031 | Light modulating sensing MOSFET transistor and process for manufacturing the same A Light Modulating sensing MOSFET transistor includes: a substrate receiving light radiation, the substrate having two source and drain areas separated by a channel extending along a first direction; a gate conductive beam extending along a second direction being su... | 12/28/2010 |
| 7855407 | CMOS image sensor and method for manufacturing the same Embodiments relate to a Complementary Metal Oxide Semiconductor (CMOS) image sensor, and to a method for manufacturing the same, that improves the low-light level characteristics of the CMOS image sensor. The CMOS image sensor has a photosensor unit and a signal pro... | 12/21/2010 |
| 7855406 | Solid-state imaging device and method of manufacturing the same An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a pho... | 12/21/2010 |
| 7851835 | Display substrate, method of manufacturing the same and display device having the same A display substrate includes a substrate, a first insulating layer, an undercut compensating member, a first electrode, a second insulating layer and a first conductive pattern. The first insulating layer is formed on the substrate. The undercut compensating member ... | 12/14/2010 |
| 7851836 | Thin-film transistor type photosensor A photosensor includes a semiconductor thin film for photoelectric conversion having a first side portion and a second side portion. A source electrode extends in the longitudinal direction of the semiconductor thin film and has a side edge portion that overlaps the... | 12/14/2010 |
| 7842984 | CMOS image sensor A CMOS image sensor is described, based on a substrate and including a transfer transistor, a reset transistor, a source follower transistor, a select transistor, a photodiode and a floating node structure. The substrate includes a floating node area between the tra... | 11/30/2010 |
| 7795653 | Electronic device including space-apart radiation regions and a process for forming the same An electronic device can include a first radiation region, a second radiation region spaced apart from the first radiation region, and an insulating region. The insulating region can have a first side and a second side opposite the first side. The first radiation re... | 09/14/2010 |
| 7786519 | Light emitting device and method for manufacturing the same This document discloses an organic light emitting device comprising a first electrode and a wire comprising a contact part formed on a substrate, an insulating layer formed on the first electrode and a portion of the wire, the insulating layer comprising an opening ... | 08/31/2010 |
| 7763917 | Photovoltaic devices with silicon dioxide encapsulation layer and method to make same A photovoltaic device and method of manufacture provides a P-N junction formed between doped semiconductor materials and adapted to produce photovoltaic current in response to radiant energy reaching the P-N junction, and a silicon dioxide protective window layer lo... | 07/27/2010 |
| 7737477 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a trans... | 06/15/2010 |
| 7728365 | CMOS image sensor structure A CMOS image sensor (CIS) process is described. A semiconductor substrate is provided, and then a gate dielectric layer, a gate material layer and a thickening layer are sequentially formed on the substrate, wherein the thickening layer includes at least a hard mask... | 06/01/2010 |
| 7709868 | Light sensing element, array substrate having the same and liquid crystal display apparatus having the same In a light sensing element having simplified structure, an array substrate having the light sensing element and an LCD apparatus having the light sensing element, the light sensing element includes a first electrode, a control electrode and a second electrode. An al... | 05/04/2010 |
| 7671391 | Time-of-light flight type distance sensor A lower cost range-finding image sensor based upon measurement of reflection time of light with reduced fabrication processes compared to standard CMOS manufacturing procedures. An oxide film is formed on a silicon substrate, and two photo-gate electrodes for charge... | 03/02/2010 |
| 7667249 | Semiconductor device A semiconductor device includes: a semiconductor element provided on a semiconductor layer; a light-blocking wall provided around the semiconductor element; and a wiring layer electrically coupled to the semiconductor element and extended from an aperture not having... | 02/23/2010 |
| 7638825 | Imaging with gate controlled charge storage A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obta... | 12/29/2009 |
| 7608870 | Isolation trench geometry for image sensors A pixel cell including a substrate having a top surface. A photo-conversion device is at a surface of the substrate and a trench is in the substrate adjacent the photo-conversion device. The trench has sidewalls and a bottom. At least one sidewall is angled less tha... | 10/27/2009 |
| 7595519 | Image sensor and method of manufacturing the same An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert ... | 09/29/2009 |
| 7538371 | CMOS image sensor integrated with 1-T SRAM and fabrication method thereof A CMOS image sensor integrated with 1T-SRAM is provided on a substrate having a pixel array part, a logic circuit part, and a memory part by adding only one photoresist process. There are a plurality of CMOS image sensor devices in the pixel array part, a logic circ... | 05/26/2009 |
| 7535042 | Pixel cell with a controlled output signal knee characteristic response A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have the gate profile of a transfer gate or a reset gate. The HDR transistor may be located on a side of the ph... | 05/19/2009 |
| 7531856 | Display apparatus A display apparatus that includes: a plurality of light-emitting devices disposed on a substrate with an accumulation of, in this or inverse order, a light transmissive electrode layer, a functional layer including a light-emitting layer, and an opposing electrode l... | 05/12/2009 |
| 7531855 | Multi-chip device and method for manufacturing the same A multi-chip device includes LED sensors for sensing light separated by a predetermined interval in a wafer, LEDs for emitting light formed over the wafer respectively corresponding to the LED sensors, a driving circuit formed between the LEDs over the wafer, an ins... | 05/12/2009 |
| 7495271 | Image-sensing apparatus In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1 and T5 are turned on and a MOS transistor T6 is turned off so that a MOS transistor T2 operates in a subthreshold region. When reset... | 02/24/2009 |
| 7491989 | Positive charging photoreceptor An imaging member includes a substrate, a charge transport layer, a charge generator layer, and a charge transporting or photoconductive overcoating layer. ... | 02/17/2009 |
| 7442972 | Semiconductor device and inspection method thereof A semiconductor device is disclosed. The device has a photodiode isolated by element isolating regions (Ia, 14a, 14b) characterized by the following facts: on the principal surface of first semiconductor layer 11 of the first elect... | 10/28/2008 |
| 7439479 | Photonic crystal-based filter for use in an image sensor The invention, in various exemplary embodiments, incorporates a photonic crystal filter into an image sensor. The photonic crystal filter comprises a substrate and a plurality of pillars forming a photonic crystal structure over the substrate. The pillars are spaced... | 10/21/2008 |
| 7432543 | Image sensor pixel having photodiode with indium pinning layer An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. A pinning layer formed fr... | 10/07/2008 |
| 7425734 | Thin-film transistor array with ring geometry An improved transistor array for a display or sensor device is described. The display or sensor device includes a plurality of pixels. Each pixel includes a width and a length. Each pixel is addressed by a transistor. The transistor addressing each pixel has a chann... | 09/16/2008 |
