Did You Know...
...that several people are credited with the invention of the flush toilet? Most people have heard of Thomas Crapper (1837-1910), the sanitary engineer who invented the valve-and-siphon arrangement that made the modern toilet possible. Another claimant to "the throne" was British inventor Alexander Cumming who patented a toilet in 1775. Then there's a nameless Minoan (a native of ancient Crete) who lived 4,000 years ago who supposedly was ahead of his time and created the first flush toilet!
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| Number | Title | Issue Date |
| 8039880 | High performance microwave switching devices and circuits A switching circuit. The novel switching circuit includes an active device and a first circuit for providing a reactive inductive load in shunt with the active device. In an illustrative embodiment, the first circuit is implemented using a transmission line coupled ... | 10/18/2011 |
| 8030691 | Semiconductor device and manufacturing method therefor An MMIC 100 is a semiconductor device which includes an FET formed on a GaAs substrate 10 and an MIM capacitor having a dielectric layer 20b arranged between a lower electrode 18b and an upper electrode 22b. A ... | 10/04/2011 |
| 7470927 | Semiconductor chip with coil element over passivation layer A method for fabricating a circuitry component includes providing a semiconductor substrate, a first coil over said semiconductor substrate, a passivation layer over said first coil; and depositing a second coil over said passivation layer and over said first coil. ... | 12/30/2008 |
| 7391067 | Hybrid microwave integrated circuit An integrated microwave transistor amplifier includes a AlGaN/GaN active transistor arrangement on a thinned Si 1-mil heat spreader. Elongated, plated-through vias extend from the source portions of the transistor arrangement through the spreader to a thick gold sup... | 06/24/2008 |
| 7378328 | Method of fabricating memory device utilizing carbon nanotubes A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high elect... | 05/27/2008 |
| 7375376 | Semiconductor display device and method of manufacturing the same A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 05/20/2008 |
| 7352267 | Cylindrically shaped superconductor component and its use as resistive current limiter The present invention is directed to a cylindrically shaped superconductor component particularly useful as resistive current limiter composed of a cylindrical superconductor body, in particular of high temperature superconductor material, provided vertically to its... | 04/01/2008 |
| 7348656 | Power semiconductor device with integrated passive component A power semiconductor device that includes a passive component, e.g., a capacitor, mechanically and electrically coupled to at least one pole thereof. ... | 03/25/2008 |
| 7342266 | Field effect transistors with dielectric source drain halo regions and reduced miller capacitance A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device area of the semiconductor substrate, on one side of the gate conductor,... | 03/11/2008 |
| 7335992 | Semiconductor apparatus with improved yield The semiconductor apparatus includes a pad; a first line layer placed immediately beneath the pad; and a lattice-shaped contact being between the pad and the first line layer. ... | 02/26/2008 |
| 7326987 | Non-continuous encapsulation layer for MIM capacitor The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Lin... | 02/05/2008 |
| 7315292 | Electric current adjustment of light emitting element of display device In a pixel circuit composing a digital-driven organic EL display device, an organic light emitting element which emits light by the supply of electric current, and two driving transistors for controlling the supply of electric current to the organic light emitting e... | 01/01/2008 |
| 7312524 | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic de... | 12/25/2007 |
| 7264986 | Microelectronic assembly and method for forming the same According to one aspect of the present invention, a method is provided for forming a microelectronic assembly. The method comprises forming first and second trenches on a semiconductor substrate, filling the first and second trenches with an etch stop material, form... | 09/04/2007 |
| 7247542 | Fabrication method of spiral inductor on porous glass substrate The present invention discloses a fabrication method and structure of spiral RF inductor on porous glass substrate. Thick porous silicon layer is natively formed on a silicon wafer by anodic etching the silicon material to a high degree of porosity. The porous silic... | 07/24/2007 |
| 7199415 | Conductive container structures having a dielectric cap Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conducti... | 04/03/2007 |
| 7173319 | Semiconductor device and method of manufacturing the same Plural trench isolation films (4) are provided with portions of an SOI layer (3) interposed therebetween in a surface of the SOI layer (3) in a resistor region (RR) where a spiral inductor (SI) is to be provided. Resistive element (30) ar... | 02/06/2007 |
| 7122878 | Method to fabricate high reliable metal capacitor within copper back-end process A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, ac contact point is provided in the surface of the first layer of interconnect aligned with which a capaci... | 10/17/2006 |
| 7112835 | Semiconductor device including a capacitance It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film 167 (1... | 09/26/2006 |
| 7109531 | High frequency switch, two-band type high frequency switch, three-band type high frequency switch, and mobile communication equipment A high frequency switch, has a transmitting terminal, a receiving terminal, an antenna terminal, a first diode having an anode electrically connected to the transmitting terminal and a cathode electrically connected to the antenna terminal, a second diode having an ... | 09/19/2006 |
| 7105884 | Memory circuitry with plurality of capacitors received within an insulative layer well A method of forming memory circuitry having a memory array having a plurality of memory capacitors and having peripheral memory circuitry operatively configured to write to and read from the memory array, includes forming a dielectric well forming layer over a semic... | 09/12/2006 |
| 7084481 | Symmetric inducting device for an integrated circuit having a ground shield The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a workin... | 08/01/2006 |
| 7078784 | Semiconductor device with inductive component and method of making An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as cop... | 07/18/2006 |
| 7064363 | Symmetric inducting device for an integrated circuit having a ground shield The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a workin... | 06/20/2006 |
| 7060584 | Process to improve high performance capacitor properties in integrated MOS technology A method of fabricating a high performance capacitor that may be incorporated into a standard CMOS fabrication process suitable for submicron devices is described. The parameters used in the standard CMOS process may be maintained, particularly for the definition an... | 06/13/2006 |
| 6982472 | Semiconductor device and capacitor A semiconductor device comprises a semiconductor substrate and a capacitor provided above the semiconductor substrate, the capacitor comprises a lower electrode containing metal, a dielectric film containing tantalum oxide or niobium oxide, an upper electrode contai... | 01/03/2006 |
| 6960797 | Semiconductor device The object of the present invention is to provide a semiconductor device, which is suitable for use to connect electric condenser microphones. A semiconductor device, comprises: a conductivity-type substrate; an epitaxial layer formed on top of the substrate; island... | 11/01/2005 |
| 6946717 | High voltage semiconductor device A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211) disposed on the substrate and electrically coup... | 09/20/2005 |
| 6936877 | Integrated circuit including a capacitor with a high capacitance density The invention relates to an electronic device provided with an electronic component which comprises an integrated circuit arrangement which has a semiconducting substrate, active components, and passive components such as capacitors with high and with low capacitanc... | 08/30/2005 |
| 6930334 | High frequency semiconductor device A high frequency semiconductor device including a high frequency semiconductor chip, comprising an active region provided on a front face side of the high frequency semiconductor chip; a covering electrode provided on the active region and connected to a ground pote... | 08/16/2005 |
| 6921939 | Power MOSFET and method for forming same using a self-aligned body implant A method for making a power MOSFET includes forming a trench in a semiconductor layer, forming a gate dielectric layer lining the trench, forming a gate conducting layer in a lower portion of the trench, and forming a dielectric layer to fill an upper portion of the... | 07/26/2005 |
| 6921959 | Semiconductor device A semiconductor device includes a semiconductor substrate, an insulating layer, an inductor, a guard ring and a potential-applying line. The insulating layer is formed on the semiconductor substrate. The inductor is formed on the insulating layer. The guard ring is ... | 07/26/2005 |
| 6914280 | Switching circuit device Since a 5 GHz-band broadband has a frequency twice that of 2.4 GHz, the parasitic capacitance greatly influences deterioration in isolation of a switching device used in this frequency region. Therefore, to improve isolation, a shunt FET is added to the device. The ... | 07/05/2005 |
| 6913965 | Non-Continuous encapsulation layer for MIM capacitor The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Lin... | 07/05/2005 |
| 6876076 | Multilayer semiconductor device for transmitting microwave signals and associated methods A multilayer semiconductor device includes at least one structure for transmitting electrical signals, and in particular, microwave signals. The device includes at least one electrically conductive enclosure that includes a bottom plate and a top plate in two differ... | 04/05/2005 |
| 6867475 | Semiconductor device with an inductive element There is provided a semiconductor device able to prevent performance degradation of an inductor element provided thereon. A high resistance region is provided below the inductor element formed on the semiconductor substrate. The high resistance region is formed deep... | 03/15/2005 |
| 6841847 | 3-D spiral stacked inductor on semiconductor material A 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connect... | 01/11/2005 |
| 6835968 | High frequency switch, two-band type high frequency switch, three-band type high frequency switch, and mobile communication equipment A high frequency switch, has a transmitting terminal; a receiving terminal; an antenna terminal; a first diode having an anode electrically connected to the transmitting terminal a... | 12/28/2004 |
| 6830970 | Inductance and via forming in a monolithic circuit A method for manufacturing, in a monolithic circuit including a substrate, an inductance and a through via, including the step of forming, from a first surface of the substrate, at least one trench according to the contour of the inductance to be formed; forming by ... | 12/14/2004 |
| 6759744 | Electronic circuit unit suitable for miniaturization The electronic circuit unit of the present invention includes first and second insulating substrates on respective surfaces of which wiring patterns are formed, and thick-film passive elements formed on the surfaces of the first and second insulating substrates in a... | 07/06/2004 |
