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| Number | Title | Issue Date |
| 8143654 | Monolithic microwave integrated circuit with diamond layer Embodiments of apparatuses, articles, methods, and systems for a monolithic microwave integrated circuit with a substrate having a diamond layer are generally described herein. Other embodiments may be described and claimed. ... | 03/27/2012 |
| 8089107 | Three-dimensional integrated device A three-dimensional integrated device includes at least two integrated circuit substrates laminated to each other, each of the integrated circuit substrates having at least one ground plane, at least one aperture provided at a desired location in the ground plane, t... | 01/03/2012 |
| 8084793 | Microwave semiconductor device using compound semiconductor and method for manufacturing the same An undoped AlGaN layer 13 is formed on a buffer layer composed of a GaN series material formed on a semiconductor substrate, a drain electrode 15 and a source electrode 16 forming ohmic junction with the undoped AlGaN layer 13 are formed ... | 12/27/2011 |
| 7939864 | Inductive bond-wire circuit A bond wire circuit includes bond wires arranged relatively to provide a selected inductance. In connection with various example embodiments, respective bond wire loops including forward and return current paths are arranged orthogonally. Each loop includes a forwar... | 05/10/2011 |
| 7935990 | RF power amplifier and method for packaging the same A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switchi... | 05/03/2011 |
| 7825440 | Suspended-membrane/suspended-substrate monolithic microwave integrated circuit modules A suspended-membrane/suspended-substrate monolithic microwave integrated circuit module and method of making same. The device contains a plurality of active devices, such as transistors, a plurality of transmission mediums connected to the active devices; and a subs... | 11/02/2010 |
| 7402853 | BST integration using thin buffer layer grown directly onto SiO/Si substrate A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss ... | 07/22/2008 |
| 7391067 | Hybrid microwave integrated circuit An integrated microwave transistor amplifier includes a AlGaN/GaN active transistor arrangement on a thinned Si 1-mil heat spreader. Elongated, plated-through vias extend from the source portions of the transistor arrangement through the spreader to a thick gold sup... | 06/24/2008 |
| 7365683 | Active smart antenna system and fabrication method thereof Disclosed are an active smart antenna system and a method thereof. The system comprises: an antenna for receiving a signal; a low noise amplifier for amplifying a signal received through the antenna so as to minimize a noise generation; and a phase shifter for contr... | 04/29/2008 |
| 7365006 | Semiconductor package and substrate having multi-level vias fabrication method A semiconductor package and substrate having multi-level plated vias provide a high density blind via solution at low incremental cost. Via are half-plated atop a circuit pattern and then a second via half is added to complete the via after isolation of elements of ... | 04/29/2008 |
| 7352045 | Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protec... | 04/01/2008 |
| 7352086 | Switching circuit, switching module and method of controlling the switching circuit A switching circuit includes switching transistors connected to one of an input terminal and an output terminal of the switching circuit, and a control bias supply circuit that supplies a control bias for cutting off all the switching transistors to the switching tr... | 04/01/2008 |
| 7348642 | Fin-type field effect transistor Disclosed herein are improved fin-type field effect transistor (FinFET) structures and the associated methods of manufacturing the structures. In one embodiment FinFET drive current is optimized by configuring the FinFET asymmetrically to decrease fin resistance bet... | 03/25/2008 |
| 7348680 | Electronic device and use thereof The electronic device (100) comprises a semiconductor element (1) (e.g. a transistor), an encapsulation (5) and an electrically conductive layer (3) with a first and a second contact pad (11,12), used as signal pads, and a third co... | 03/25/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7334326 | Method for making an integrated circuit substrate having embedded passive components A method for making an integrated circuit substrate having embedded passive components provides a reduced cost and compact package for a die and one or more passive components. An insulating layer of the substrate is embossed or laser-ablated to generate apertures f... | 02/26/2008 |
| 7335931 | Monolithic microwave integrated circuit compatible FET structure A field effect transistor structure includes a single crystal substrate having: a source, gate and drain electrodes disposed on an upper surface of the substrate, the gate electrode having a region thereof disposed between a region of the drain electrode and a regio... | 02/26/2008 |
| 7336221 | High frequency package, transmitting and receiving module and wireless equipment A multilayer dielectric substrate includes a first signal via, a second signal via, an internal-layer signal line, an internal-layer ground conductor, and ground vias. The first signal via is connected to a bias-and-control-signal terminal of a high-frequency semico... | 02/26/2008 |
| 7324043 | Phase shifters deposited en masse for an electronically scanned antenna A system and method for an electronically scanned antenna is provided in which phase shifters are deposited en masse along with other electronically scanned antenna components on a wafer scale substrate using a thin film process. Alternative wafer scale sizes may be... | 01/29/2008 |
| 7316167 | Method and apparatus for protection of contour sensing devices A sheet film protective covering for different types of contour sensing devices is described. In a preferred embodiment, this covering is a mylar sheet film that is coated with a layer of a conductive material. The bottom surface of the mylar film is also preferably... | 01/08/2008 |
| 7312134 | Dual stressed SOI substrates The present invention provides a strained-Si structure, in which the nFET regions of the structure are strained in tension and the pFET regions of the structure are strained in compression. Broadly the strained-Si structure comprises a substrate; a first layered sta... | 12/25/2007 |
| 7312103 | Method for making an integrated circuit substrate having laser-embedded conductive patterns A method for making an integrated circuit substrate having laser-embedded conductive patterns provides a high-density mounting and interconnect structure for integrated circuits. A dielectric material is injection-molded or laminated over a metal layer that is punch... | 12/25/2007 |
| 7309842 | Shielded monolithic microplasma source for prevention of continuous thin film formation A monolithic microplasma source includes a dielectric substrate having an outer surface that is exposed to a time varying electric field. A gap layer is positioned on an inner surface of the dielectric substrate. A shield including a slit is positioned on the gap la... | 12/18/2007 |
| 7305222 | Radio frequency integrated circuit having reduced receiver noise levels A radio frequency integrated circuit (RFIC) includes a digital to analog converter, an analog to digital converter, and a radio module. The digital to analog converter (DAC) is operably coupled to convert outbound symbols into outbound baseband signals, wherein the ... | 12/04/2007 |
| 7288819 | Stable PD-SOI devices and methods One aspect of the present subject matter relates to a partially depleted silicon-on-insulator structure. The structure includes a well region formed above an oxide insulation layer. In various embodiments, the well region is a multilayer epitaxy that includes a sili... | 10/30/2007 |
| 7288417 | On-chip signal transformer for ground noise isolation A mixed-signal chip having a signal transformer located between analog circuitry and digital circuitry. The signal transformer includes a primary winding electrically coupled to the analog circuitry and a secondary winding electrically coupled to the digital circuit... | 10/30/2007 |
| 7286001 | High-frequency switching device and semiconductor device The first terminals of a plurality of resistor elements are connected to the intermediate connection points of a plurality of FETs connected in series, and a voltage, having a phase opposite to that of the voltage applied to the gate terminals of the plurality of FE... | 10/23/2007 |
| 7280848 | Active array antenna and system for beamforming An active antenna array for use in a beamforming antenna system. The antenna array includes multicarrier power amplifiers coupled to each antenna element wherein the outputs of the multicarrier power amplifiers are linearized. The antenna array communicates with a b... | 10/09/2007 |
| 7268022 | Stable PD-SOI devices and methods One aspect of the present subject matter relates to a partially depleted silicon-on-insulator structure. The structure includes a well region formed above an oxide insulation layer. In various embodiments, the well region is a multilayer epitaxy that includes a sili... | 09/11/2007 |
| 7265604 | High-frequency switch circuit arrangement A high-frequency switch circuit arrangement. A plurality of stages (for example, two stages) of capacitative elements connected in series (C11 and C12, C21 and C22) are used in a shunt path of a high-frequency component. If a surge voltag... | 09/04/2007 |
| 7262470 | Semiconductor device With a microwave FET, the internalized Schottky junction capacitance or pn junction capacitance is small and these junctions are weak against static electricity. However, with a microwave device, a protecting diode could not be connected since the increase of parasi... | 08/28/2007 |
| 7262134 | Microfeature workpieces and methods for forming interconnects in microfeature workpieces Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. In one embodiment, a method of forming an interconnect in a microfeature workpiece includes forming a hole extending through a t... | 08/28/2007 |
| 7250827 | Circuitry module A circuit assembly includes multiple substrate with a regions of embedded signal processing circuitry can be connected to a region of adjustable signal processing circuitry and a cavity formed through an area of the substrate layers to expose signal connection termi... | 07/31/2007 |
| 7250626 | Probe testing structure A calibration structure for probing devices. ... | 07/31/2007 |
| 7238543 | Methods for marking a bare semiconductor die including applying a tape having energy-markable properties A method used for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cros... | 07/03/2007 |
| 7236065 | Integrated RF-front end having an adjustable antenna An integrated RF front-end module for use in a communications device, such as a mobile phone. The RF front-end module is made from a laminated structure consisting of a plurality of layers. At least one of the layers is used to embed RF electronics. Microvias are di... | 06/26/2007 |
| 7232699 | Method of making a high precision microelectromechanical capacitor with programmable voltage source A Method of Making a High Precision Microelectromechanical Capacitor with Programmable Voltage Source includes steps for forming a monolithic MEMS device having a capacitance actuator, a trim capacitor, and a high precision, programmable voltage source. The trim cap... | 06/19/2007 |
| 7221207 | Semiconductor switching circuit for switching the paths of a high frequency signal in a mobile communications unit A semiconductor apparatus is provided which makes it possible to reduce the number of control terminals required for switching through paths of a high frequency signal, simplify the circuit configuration for controlling the terminals, improve an isolation characteri... | 05/22/2007 |
| 7214597 | Electronic components and method of fabricating the same A method is provided for fabricating integrated electronic components. According to the method, an initial structure is produced on the surface of a first substrate. This initial structure incorporates a defined pattern formed from volumes of differentiated material... | 05/08/2007 |
| 7199635 | High-frequency switching device and semiconductor The first terminals of a plurality of resistor elements are connected to the intermediate connection points of a plurality of FETs connected in series, and a voltage, having a phase opposite to that of the voltage applied to the gate terminals of the plurality of FE... | 04/03/2007 |
