Class 257/273 - With bipolar device

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter located in an integrated circuit with a device
No. of patents: 183
Last issue date: 10/18/2011

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Number	Title	Issue Date
4250409	Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches To switch a first gated diode switch (GDS) to the "OFF" state requires a voltage applied to the gate which is more positive than that of the anode or cathode and the sourcing of current into the gate which is of the same order of magnitude as flows betwee...	02/10/1981
4233615	Semiconductor integrated circuit device An IC device comprising a junction type field effect transistor of a back gate type and a bipolar device such as a bipolar transistor and a resistor made of impurity diffused region, wherein an extremely thin (in the order of 0.05-0.2 μm) impurity doped ...	11/11/1980
4216038	Semiconductor device and manufacturing process thereof In a semiconductor device of the type arranged so that the minority carriers are injected into a lightly-doped n type semiconductor layer from a heavily-doped p type semiconductor layer provided in the n type layer, that portion of the p type layer exclud...	08/05/1980
4209795	Jsit-type field effect transistor with deep level channel doping A field effect transistor of the type wherein the conductivity of the channel thereof is variable by injecting the minority carriers into the channel from the gate thereof, is disclosed. The channel of the transistor includes minority carrier recombinatio...	06/24/1980
4202002	Ion-implanted layers with abrupt edges A structure in the form of an ion-implanted layer with asymmetric edges is formed in a semiconductor substrate. The asymmetric edge has one end which slopes toward the surface of the substrate and the other which terminates abruptly inside the bulk of the...	05/06/1980
4198648	Integrated semiconductor device An integrated semiconductor device comprising: a first and a second static induction transistor each including a drain and a source, each having a first conductivity type, a current channel having the first conductivity type and located between the drain ...	04/15/1980
4143392	Composite JFET-bipolar structure A junction field effect transistor and a bipolar transistor are merged in a single composite device disposed within a single isolation region by the use of planar processing techniques. The device includes an annular source region formed within a semicond...	03/06/1979
4138614	JFET switch circuit JFET and bipolar transistor devices are combined into an analog signal switching circuit. A JFET acts as a switch device for controlling analog signals. The JFET gate is charged through a bipolar transistor to turn if off and discharged through a second b...	02/06/1979
4126899	Junction field effect transistor random access memory A random access memory (RAM) in which each memory cell includes a JFET having two gate electrodes selectable by means of a single word line and a single bit line. The JFETs have a common electrode formed from the substrate of a semiconductor body common t...	11/21/1978
4095252	Composite JFET-bipolar transistor structure A JFET is coupled in parallel with a bipolar transistor to produce a composite structure that has improved signal transfer characteristics in certain circuit applications. While useful with discrete devices, the combination is readily achieved in integrat...	06/13/1978
4085417	JFET switch circuit and structure JFET and bipolar transistor devices are combined into an analog signal switching circuit. A JFET acts as a switch device for controlling analog signals. The JFET gate is charged through a bipolar transistor to turn it off and discharged through a second b...	04/18/1978
4069494	Inverter circuit arrangements An inverter has a bipolar transistor and a field-effect transistor. The base gate electrodes are connected to the inverter input, and the collector and source electrodes are connected to the inverter output. The transistors are in series between supply ra...	01/17/1978
4068254	Integrated FET circuit with input current cancellation An integrated circuit including an FET and an analog for cancelling input current that would otherwise be required to supply the FET gate leakage current. The analog establishes a leakage current the magnitude of which is a substantially fixed proportion ...	01/10/1978
4066917	Circuit combining bipolar transistor and JFET's to produce a constant voltage characteristic A pair of FET's are coupled in series between the emitter and collector of a bipolar transistor and the juncture of the FET's coupled to the bipolar transistor base. The FET gates are coupled to the bipolar transistor collector. When a current is passed t...	01/03/1978
4063271	FET and bipolar device and circuit process with maximum junction control Disclosed are improved field-effect and bipolar semiconductor devices and the method of making them, wherein maximum junction control provides highly predictable device parameters. Low temperature epitaxial depositions provide tight junction thickness and...	12/13/1977
4049476	Method of manufacturing a semiconductor integrated circuit device which includes at least one V-groove jfet and one bipolar transistor A method of manufacturing a semiconductor integrated circuit device, which includes at least one junction field-effect transistor and at least one bipolar transistor, is characterized in that a groove portion is formed by chemically etching a part of a di...	09/20/1977
4032961	Gate modulated bipolar transistor Geometrical design criteria are disclosed for a Gate Modulated BiPolar Transistor, or GAMBIT, which is a three terminal variable negative resistance device. The GAMBIT is a planar, interdigited, integrated device whose electrical characteristics show a vo...	06/28/1977
4016595	Field effect transistor switching circuit A novel FET switching circuit including a high beta transistor in an analog switch FET circuit for rapid, low power consumption with transient current pull up to the FET switching circuit to the on condition. A novel circuit is utilized and coupled to the...	04/05/1977
3999207	Field effect transistor with a carrier injecting region A semiconductor device includes a first semiconductive region of one conductivity type, a first electrode and a second electrode formed on said first semiconductive region, a second semiconductive region of the opposite conductivity type contiguous to a c...	12/21/1976
3986195	Light responsive field effect transistor having a pair of gate regions A semiconductor device includes a first semiconductive region of a first conductivity type, a second semiconductive region of a second conductivity type adjacent to the first semiconductive region, and a third semiconductive region of the first conductivi...	10/12/1976
3979769	Gate modulated bipolar transistor A Gate Modulated BiPolar Transistor, or GAMBIT, is a three terminal negative resistance device. A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal....	09/07/1976
3968450	Transistor amplifier A transistor amplifier comprised of a field effect transistor having triode-type dynamic characteristics in combination with a bipolar transistor. The current flowing through the field effect transistor is a function of an input signal. The bipolar transi...	07/06/1976
3936929	Fet and bipolar device and circuit process with maximum junction control Disclosed are improved field-effect and bipolar semiconductor devices and the method of making them, wherein maximum junction control provides highly predictable device parameters. Low temperature epitaxial depositions provide tight junction thickness and...	02/10/1976

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Class 257/273 - With bipolar device