Class 257/271 - Load element or constant current source (e.g., with source to gate connection)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter structured to function as an electrical load
No. of patents: 36
Last issue date: 09/04/2007

Number	Title	Issue Date
7265399	Asymetric layout structures for transistors and methods of fabricating the same High power transistors are provided. The transistors include a source region, a drain region and a gate contact. The gate contact is positioned between the source region and the drain region. First and second ohmic contacts are provided on the source and drain regio...	09/04/2007
7102182	Semiconductor device An example semiconductor device is capable of preventing a buried diffusion region formed near the bottom surface of a source trench from diffusing to the extent that it contacts a gate trench in the vicinity of that buried diffusion region even if the accuracy of t...	09/05/2006
7071811	High performance voltage control diffusion resistor The present invention provides a diffusion resistor that is formed in the substrate. A diffusion region is formed within the substrate that contains a first and second contact region. These contact regions extend downward from the surface of the substrate. A third c...	07/04/2006
7042148	Field emission display having reduced power requirements and method A field emission display includes a substrate and a plurality of emitters formed on columns on the substrate. The display also includes a porous dielectric layer formed on the substrate and the columns. The porous dielectric layer has an opening formed about each of...	05/09/2006
7012290	Electro-optical device An object of the present invention is to realize a numerical aperture higher than that of a pixel having a conventional construction by using a pixel circuit having a novel construction in an electro-optical device. Therefore, it is utilized that the electric potent...	03/14/2006
6958519	Methods of forming field effect transistors and field effect transistor circuitry Methods of forming field effect transistors and resultant field effect transistor circuitry are described. In one embodiment, a semiconductive substrate includes a field effect transistor having a body. A first resistive element is received by the substrate and conn...	10/25/2005
6953375	Manufacturing method of a field emission display having porous silicon dioxide insulating layer A field emission display includes a substrate and a plurality of emitters formed on columns on the substrate. The display also includes a porous dielectric layer formed on the substrate and the columns. The porous dielectric layer has an opening formed about each of...	10/11/2005
6838735	Trench FET with non overlapping poly and remote contact therefor A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with conductive polysilicon. Spaced narrow polysilicon strips overlie the silicon surface and connects adjacent trenches to one an...	01/04/2005
6476428	Field effect transistor, control method for controlling such a field effect transistor and a frequency mixer means including such a field effect transistor The field effect transistor includes a control terminal (G), a first main terminal (S) and a second main terminal (D1). The control terminal (G) is included to be coupled to gate voltage means which are adapted to provide a control voltage (Vg) which cont...	11/05/2002
6433370	Method and apparatus for cylindrical semiconductor diodes Semiconductor diodes are diode connected cylindrical junction field effect devices having one diode terminal as the common connection between a top gate, a back gate and a first channel terminal of the cylindrical junction field effect devices. The second...	08/13/2002
6121665	Methods of forming field effect transistors and field effect transistor circuitry Methods of forming field effect transistors and resultant field effect transistor circuitry are described. In one embodiment, a semiconductive substrate includes a field effect transistor having a body. A first resistive element is received by the substra...	09/19/2000
5894163	Device and method for multiplying capacitance A semiconductor device (400) and method are provided for multiplying a capacitance. A contact region (402) is formed in an island in a semiconductor substrate (499) bounded by an isolation region (403), producing the capacitance at the junction of the con...	04/13/1999
5459343	Back gate FET microwave switch A semiconductor device which includes a channel region of predetermined conductivity type having a pair of opposing surfaces (11 or 33) , a control element of opposite conductivity type disposed on one of the opposing surfaces (13 or 31) and a pair of spa...	10/17/1995
5324978	Semiconductor device having an improved breakdown voltage-raising structure It is usual in high-voltage integrated circuits to provide one or several breakdown-voltage-raising rings at the edge of a high-voltage island in the form of surface zones of the conductivity type opposite to that of the island. According to the invention...	06/28/1994
5319236	Semiconductor device equipped with a high-voltage MISFET The invention provides a semiconductor device equipped with a high-voltage MISFET capable of forming a push-pull circuit on one chip by optimizing a junction-separation structure. In an n-channel MOSFET, when a potential is applied to the gate electrode, ...	06/07/1994
5223725	Charge transfer device equipped with junction type output transistor improved in sensitivity to charge packet A charge transfer device is equipped with a junction type field effect transistor coupled with the final stage of a transfer shift register for modulating current flowing therethrough depending upon the amount of electric charge from the transfer shift re...	06/29/1993
5121174	Gate-to-ohmic metal contact scheme for III-V devices A direct shorting contact structure comprising a metal layer (18') makes ohmic contact with a source (10) and/or drain (12) region and with a gate electrode (22). The direct contact between source or drain and gate over the active region (16) reduces the ...	06/09/1992
4921814	Method of producing an MMIC A method of producing MMIC's and the MMIC thus produced having a reproducible quiescent operating point from lot to lot under the same bias conditions. The source to drain saturation current of the amplifier MESFET in the MMIC can vary from lot to lot if ...	05/01/1990
4920395	High sensitivity photodiode The sensitivity of a photodiode, which has a semiconductor substrate of first conductivity, an island region of an epitaxial layer of oppposite second conductivity formed on the substrate, a diffused region of the first conductivity formed in the epitaxia...	04/24/1990
4864454	Means for reducing damage to JFETs from electrostatic discharge events Differentially-connected pairs of JFETs on an IC chip are protected from ESD events by connecting respective discharge control resistors to the drains of the JFETs in such a manner as to be in series with any flow of current through either JFET....	09/05/1989
4853561	Family of noise-immune logic gates and memory cells A new family of memory cells and digital-logic gates use an enhancement-mode driver, a voltage-level shifter, and a current regulator to provide improved noise margins and large logic swings. The voltage-level shifter and the current regulator are connect...	08/01/1989
4814835	Active load type of current source and method of making it An active load in an integrated logic circuit of the Direct Coupled FET Logic (DCFL type) in which the active load has a negative threshold voltage and the transistors have a positive threshold voltage. The active load is a transistor, the gate metallizat...	03/21/1989
4737837	Ring topology for an integrated circuit logic cell An improved topology for a multi-input Boolean logic circuit whereby the circuit can be realized in integrated circuit form while consuming less area on the semiconductor wafer and exhibiting lower parasitic capacitance than equivalent integrated circuits...	04/12/1988
4701646	Direct coupled FET logic using a photodiode for biasing or level-shifting A direct coupled FET logic (DCFL) circuit element has an active FET with source connected to a low reference voltage and drain connected through a pull-up FET to a higher reference voltage. An input is applied to the gate of the active FET and the output ...	10/20/1987
4628338	Semiconductor device A compact connection structure between two electrodes made of two types of metals, i.e., metals which respectively make Schottky and ohmic contact with a semiconductor, is provided by using a high melting point metal or silicide thereof which makes Schott...	12/09/1986
4454523	High voltage field effect transistor A high voltage field effect transistor includes a source region in a first major surface of a semiconductor body and a drain region in a second major surface of the semiconductor body. A first gate region is formed in the first major surface and is surrou...	06/12/1984
4266233	I-C Wafer incorporating junction-type field-effect transistor A silicon wafer incorporating several semiconductor components, among them a junction-type field-effect transistor (J-FET) of low pinch-off voltage connectable as a resistor, comprises a substrate of P-type conductivity with an insular layer of N+	05/05/1981
4263518	Arrangement for correcting the voltage coefficient of resistance of resistors integral with a semiconductor body Arrangements are described for correcting the voltage coefficient of resistance (VCR) of resistors integral with a semiconductor body and, more particularly, for correcting the VCR of resistors implanted in a semi-conductor body. Resistors typically compr...	04/21/1981
4201997	MESFET semiconductor device and method of making An improved MESFET integrated circuit device with a metal-semiconductor diode as the control element and a source and drain as other device elements is fabricated using a self-aligned gate process which consists of an implanted channel stopper underneath ...	05/06/1980
4202003	MESFET Semiconductor device and method of making A MESFET integrated circuit device with a metal-semiconductor diode as the control element and a source and drain as other device elements is fabricated using a method which consists of an implanted channel stopper underneath a thick field oxide, implante...	05/06/1980
4175240	Integrated logic circuit with a current source made as a field-effect transistor The integrated logic circuit of the invention comprises a switching field-effect transistor and a current source, which is another field-effect transistor having its conductivity complementary to that of the switching field-effect transistor. The second f...	11/20/1979
4164668	Method of correcting the voltage coefficient of resistors implanted or diffused in a semiconductor substrate A method and structure for correcting the voltage coefficient of resistance (VCR) of a resistor in a semiconductor body is described. The resistor may be diffused or ion implanted of one conductivity and formed in an isolated layer of the opposite type of...	08/14/1979
4163988	Split gate V groove FET A split gate V groove FET device mounted in a substrate with a first terminal comprising a body of a first conductive material in the apex of said V groove, said first terminal connected to a first conductive channel in a first side of said V groove to fo...	08/07/1979
4053915	Temperature compensated constant current source device There is disclosed a constant current source device comprising a diffused integrated circuit resistor in combination with a junction field effect transistor (FET). The FET is fabricated having an ion-implanted channel and diffused regions of the same cond...	10/11/1977
4048647	Solid state disconnect device A solid state disconnect or isolating device for disconnecting a subscriber on his premises, replaces a relay with associated circuitry and items. It can be coupled with a surge protection device to provide disconnect signalling, plus loop testing if desi...	09/13/1977
3953879	Current-limiting field effect device A field effect semiconductor device that has particular use in limiting current in electric circuits over a very wide power range. In a preferred form, the device consists of a crystalline-material semiconductor wafer having multiple channels at one major...	04/27/1976

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Class 257/271 - Load element or constant current source (e.g., with source to gate connection)