Class 257/27 - Field effect transistor

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the ballistic transport device is
No. of patents: 100
Last issue date: 04/03/2012

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Number	Title	Issue Date
8148718	Low voltage transistors The invention provides a transistor having a substrate, a structure supported by the substrate including a source, drain, gate, and channel, wherein the source and the channel are made of different materials, and a tunnel junction formed between the source and the c...	04/03/2012
8058643	Electrochemical memory with internal boundary Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, a memory cell having two sections with outwardly-facing portions, the outwardly-facing portions electrical...	11/15/2011
8017935	Parallel redundant single-electron device and method of manufacture A method of manufacturing a parallel redundant array of single-electron devices. The method includes (a) providing a mask for diffusing a plurality of n-doped regions defined by a first set of a plurality of active regions, (b) providing a mask for disposing a plura...	09/13/2011
7851784	Nanotube array electronic devices The Nanotube Array Ballistic Transistors are disclosed, wherein the ballistic (without collisions) electron propagation along the nanotubes, grown normally to the substrate plane on the common metal electrode, is used for a new class of hybrid (solid state/vacuum) e...	12/14/2010
7700942	Semiconductor device including an embedded contact plug A semiconductor device includes an active area isolated by an isolation area on a semiconductor substrate. A transistor includes a gate electrode extending across the active area, source/drain regions formed in the active area on both sides of the gate electrode, an...	04/20/2010
7598516	Self-aligned process for nanotube/nanowire FETs A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-al...	10/06/2009
7468524	Field-effect transistor A nitride-based group III-V compound semiconductor device includes a buffer layer, a first nitride semiconductor layer and a second nitride semiconductor layer successively stacked on a substrate, the first and the second nitride layers having their respective latti...	12/23/2008
7442953	Wavelength selective photonics device A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons...	10/28/2008
7425721	Field-effect transistor A field-effect transistor is provided which includes: a first nitride semiconductor layer having a lattice constant a1 and a bandgap Eg1; a second nitride semiconductor layer stacked on the first nitride semiconductor layer and having a lattice...	09/16/2008
7414262	Electronic devices and methods for forming the same Electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the printed material and substrate are part of an electronic device having at least three terminals, wherein the electronic device has a ...	08/19/2008
7339206	Field effect transistor including a group III-V compound semiconductor layer A field effect transistor (FET) includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The f...	03/04/2008
7329894	Semiconductor laser device and semiconductor optical modulator Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transpo...	02/12/2008
7285794	Quantum semiconductor device and method for fabricating the same The quantum semiconductor device comprises a first semiconductor layer 18 on a substrate 10 with a two-dimensional carrier gas formed in; a quantum dot 20 formed on the first semiconductor layer 18; a second semiconductor layer 22 ...	10/23/2007
7279697	Field effect transistor with enhanced insulator structure A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the...	10/09/2007
7274035	Memory devices based on electric field programmable films A composition for the formation of an electric field programmable film, the composition comprising a matrix precursor composition or a dielectric matrix material, wherein the dielectric matrix material comprises an organic polymer and/or a inorganic oxide; and an el...	09/25/2007
7206552	Semiconductor switching device A semiconductor switching device includes two FETs with different device characteristics, a common input terminal, and two output terminals. The gate width of each FET is about 400 μm, and the maximum power required for the device operation is maintained by a lager...	04/17/2007
7182914	Structure and manufacturing process of a nano device transistor for a biosensor The present invention relates to a structure and manufacturing process of a nano device transistor for a biosensor. The structure, the manufacturing process and the related circuit for a carbon nano tube or nano wire transistor biosensor device are provided. The ref...	02/27/2007
7173272	Quantum optical CNOT gate A nondeterministic quantum CNOT gate (10) for photon qubits, with success probability 1/9, uses beamsplitters (B1–B5) with selected reflectivities to mix control and target input modes. It may be combined with an atomic quantum memory to const...	02/06/2007
7141816	Field effect transistor A field effect transistor comprises, at least, a channel forming region formed in a semiconductor layer, and a gate electrode provided in face-to-face relation with the channel forming region via a gate insulating film, wherein the semiconductor layer is made of a m...	11/28/2006
7132713	Controllable conduction device with electrostatic barrier A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple la...	11/07/2006
7091094	Method of making a semiconductor device having a gate electrode with an hourglass shape The present invention provides a semiconductor device that has reduced a short-channel effect by preventing the effective channel length at the sides of a channel of a transistor from decreasing by forming the length of a gate electrode to be different according to ...	08/15/2006
7064359	Switching semiconductor device and switching circuit A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the ...	06/20/2006
7026642	Vertical tunneling transistor The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may ...	04/11/2006
7019359	Controllable conduction device with electrostatic barrier A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple la...	03/28/2006
7009200	Field effect transistor A field effect transistor comprises a source and a drain, and a channel layer of Si1-x-yGexCy crystal (1>x>0, 1>y≧0). Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer. ...	03/07/2006
6998634	Memory device utilizing vertical nanotubes A memory device using vertical nanotubes includes an array of first electrodes arranged in strips in a first direction, a dielectric layer deposited on the array of first electrodes, the dielectric layer having a plurality of holes arranged therein, an array of nano...	02/14/2006
6984842	Silicon nanoparticle field effect transistor and transistor memory device A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electro...	01/10/2006
6963090	Enhancement mode metal-oxide-semiconductor field effect transistor An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial ma...	11/08/2005
6937632	Integrated semiconductor laser and waveguide device A buried heterojunction laser optically coupled with a buried waveguide electro-absorption (EA) optical modulator via an active layer is fabricated on a substrate carrying a number of deposited semiconductor layers. The laser component includes a laser current condu...	08/30/2005
6929987	Microelectronic device fabrication method In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so as to form an overhanging ledge in the first channel, and then a metal...	08/16/2005
6931041	Integrated semiconductor laser device and method of manufacture thereof An integrated buried heterojunction laser optically coupled to a ridge waveguide electro-absorption (EA) optical modulator having a raised ridge structure is manufactured on a single semiconductor substrate on which a plurality of semiconductor layers are grown, inc...	08/16/2005
6924528	Semiconductor device and method of manufacturing the same In a bottom gate type semiconductor device made of a semiconductor layer with crystal structure, source/drain regions are constructed by a lamination layer structure including a first conductive layer (n+ layer), a second conductive layer (n−...	08/02/2005
6864517	Bipolar structure with two base-emitter junctions in the same circuit Bipolar integrated circuits employing SiGe technology incorporate the provision of mask-selectable types of bipolar transistors. A high-performance/high variability type has a thin base in which the diffusion from the emitter intersects the base dopant diffusion wit...	03/08/2005
6833556	Insulated gate field effect transistor having passivated schottky barriers to the channel A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are separated by an interface layer so as to form a channel-interface layer-s...	12/21/2004
6787820	Hetero-junction field effect transistor having an InGaAIN cap film A semiconductor device includes an AlGaN film formed on a GaN film on a substrate, a gate electrode formed on the AlGaN film, and source and drain electrodes formed on either side of the gate electrode on the AlGaN film. An n-type InxGayAl...	09/07/2004
6787794	Quantum computer A quantum computer comprises a pair of qubits disposed between first and second single-electron electrometers and a control gate. The qubits each comprise a molecule of ammonia caged inside a C60 molecule disposed on a substrate. The ammonia-bearing C	09/07/2004
6784500	High voltage integrated circuit amplifier A circuit including at least one low voltage input, at least one high voltage output, and a field transistor having a source, a drain and a control region. The circuit may comprise a high-voltage amplifier. In this embodiment, an electrical connection between the hi...	08/31/2004
6774460	IMPATT diodes The present invention relates to an impact ionisation avalanche transit time (IMPATT) diode device comprising an avalanche region and a drift region, wherein at least one narrow bandgap region, with a bandgap narrower than the bandgap in the avalanche region, is loc...	08/10/2004
6747357	Dielectric device having multi-layer oxide artificial lattice with lattice directional feature A dielectric device has a multi-layer oxide artificial lattice. The artificial lattice is a stacked structure with a plurality of dielectrics. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness. The dielectric film is ...	06/08/2004
6727551	MOS semiconductor device and method of manufacturing the same The object of the present invention is to suppress a short channel effect on a threshold voltage. A channel region 5, a pair of source-drain regions and an isolating film 2 having a trench isolation structure are selectively formed in a main surface of...	04/27/2004

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Class 257/27 - Field effect transistor