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| Number | Title | Issue Date |
| 8158968 | Methods of forming carbon nanotubes architectures and composites with high electrical and thermal conductivities and structures formed thereby Methods and associated structures of forming microelectronic devices are described. Those methods may include method of forming a layered nanotube structure comprising a wetting layer disposed on a nanotube, a Shottky layer disposed on the wetting layer, a barrier l... | 04/17/2012 |
| 7875876 | Scalable quantum computer Described is a scalable quantum computer that includes at least two classical to quantum interface devices, with each being connected to a distinct quantum processing unit (QPU). An Einstein-Podolsky-Rosen pair generator (EPRPG) is included for generating an entangl... | 01/25/2011 |
| 7732807 | Integrated circuit A fine vacuum tube element and other electronic elements are integrated and formed on a semiconductor substrate, and the fine vacuum tube element and the other electronic elements transmit signals to and from each other. When integrating the vacuum tube element with... | 06/08/2010 |
| 7414261 | Ballistic semiconductor device A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer... | 08/19/2008 |
| 7371538 | Microluminometer chip and method to measure bioluminescence An integrated microluminometer includes an integrated circuit chip having at least one n-well/p-substrate junction photodetector for converting light received into a photocurrent, and a detector on the chip for processing the photocurrent. A distributed electrode co... | 05/13/2008 |
| 7315048 | Method and apparatus for mixing light emitted by a plurality of solid-state light emitters In one embodiment, light emitted by a plurality of solid-state light emitters is mixed by mounting the plurality of solid-state light emitters on a transparent to translucent substrate so that they primarily emit light away from the substrate. The light emitters are... | 01/01/2008 |
| 7230804 | Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter A magnetic tunnel transistor (MTT) is formed with a self-pinned emitter layer. The self-pinned emitter layer decreases resistance in by eliminating a thick resistive adjacent anti-ferromagnetic pinning layer. Also, the present invention reduces a series resistance i... | 06/12/2007 |
| 7157749 | Bipolar transistor with a GaAs substrate and a SiGe base or collector A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the... | 01/02/2007 |
| 7141865 | Low noise semiconductor amplifier A Low Noise semiconductor amplifier structure formed from layers of differently doped semiconductor material. This structure when properly biased will amplify voltage signals applied to the input terminal (Base1 or signal-base), and provide the same signal, a... | 11/28/2006 |
| 7123792 | Configurable aperiodic grating device The invention relates to the field of grating structures. The invention provides a longitudinal grating having an aperiodic structure, wherein the grating has a selected response characteristic and any repeated unit cell in the structure is significantly longer than... | 10/17/2006 |
| 7115942 | Method and apparatus for nonvolatile memory Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for nonvolatile memory device. The device has a strain source, an injection filter, a tunneling gate, a ballistic gate, a charge storage region, a source, and a ... | 10/03/2006 |
| 7109408 | Solid state energy converter A solid-state energy converter with a semiconductor or semiconductor-metal implementation is provided for conversion of thermal energy to electric energy, or electric energy to refrigeration. In n-type heat-to-electricity embodiments, a highly doped n* emitter regio... | 09/19/2006 |
| 7018881 | Suspended gate single-electron device The present invention provides a single-electron transistor device (100). The device (100) comprises a source (105) and drain (110) located over a substrate (115) and a quantum island (120) situated between the source and dr... | 03/28/2006 |
| 7012274 | Modulation doped thyristor and complementary transistors combination for a monolithic optoelectronic integrated circuit A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped transistor structures inverted with respect to each other. The transis... | 03/14/2006 |
| 6936871 | Heterojunction bipolar transistor with a base layer that contains bismuth A heterojunction bipolar transistor (HBT) with improved characteristics is provided. A III-V compound semiconductor having Bi added thereto is used for a base layer of a GaAs-based or InP-based HBT. For example, a GaAs-based HBT is formed by successively stacking a ... | 08/30/2005 |
| 6727530 | Integrated photodetector and heterojunction bipolar transistors The speed at which optical networking devices operate is increased with the present invention with integrated circuits that provide both optical and electronic functions. The present invention provides highly integrated p-i-n or p-i-n-i-p photodetectors and heteroju... | 04/27/2004 |
| 6566694 | Heterojunction bipolar transferred electron tetrode A heterojunction bipolar transferred electron tetrode has an anode region providing a first terminal, an active region in which Gunn-Hilsum oscillations are generated, a base region providing a second terminal, a cathode region providing a third terminal,... | 05/20/2003 |
| 6518589 | Dual mode FET & logic circuit having negative differential resistance mode An electronic device includes a FET that is capable of operating in a negative differential resistance mode as well as in a conventional FET mode. The selection of the mode can be accomplished by providing a control signal to a body terminal of the FET as... | 02/11/2003 |
| 6420727 | Light-emitting semiconductor device with quantum-wave interference layers A light-emitting device comprising an emission layer which has a single layer structure is formed. The emission layer is sandwiched by a first quantum-wave interference layer constituted by plural periods of a pair of a first layer and a second layer, the... | 07/16/2002 |
| 6417520 | Semiconductor device with quantum-wave interference layers A light-emitting diode comprising a quantum-wave reflection layer for electrons, a quantum-wave transmission layer for electrons, and an emission layer formed between the quantum-wave reflection layer and th e quantum-wave transmission layer is used as a ... | 07/09/2002 |
| 6403874 | High-efficiency heterostructure thermionic coolers A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. T... | 06/11/2002 |
| 6323414 | Heterostructure thermionic coolers A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. T... | 11/27/2001 |
| 6303940 | Charge injection transistor using high-k dielectric barrier layer The present invention relates to a heterojunction structure based upon the oxide/high-k dielectric barrier. In exemplary embodiment, a silicon layer has a silicon dioxide layer thereon, and a high-k dielectric material disposed on the oxide layer. Thereaf... | 10/16/2001 |
| 6255674 | Silicon-germanium heterobipolar transistor with a step-wise graded base A silicon-germanium heterobipolar transistor has a silicon emitter 1, a silicon-germanium base 2 and a silicon collector 3 such that, starting from the emitter 1, the base 2 includes a change in the Ge content in the form of a step-wise increase, and a li... | 07/03/2001 |
| 6201258 | Hot carrier transistors utilizing quantum well injector for high current gain A quantum transistor (10) includes an emitter (38), an injector structure (36), a base (20) and a collector (16) coupled to the base. The injector (36) is interposed between the emitter (38) and the base (20). The injector structure (36) includes a quantu... | 03/13/2001 |
| 6097036 | Semiconductor logic element and apparatus using thereof A semiconductor logic element is provided which is capable of a plurality of logic operations. The semiconductor logic element includes a semiconductor substrate on which is disposed at least three control electrodes and an output electrode for outputting... | 08/01/2000 |
| 6091077 | MIS SOI semiconductor device with RTD and/or HET The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common subst... | 07/18/2000 |
| 5955772 | Heterostructure thermionic coolers A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. T... | 09/21/1999 |
| 5907159 | Hot electron device and a resonant tunneling hot electron device The present invention is to solve the problems caused in various methods used to improve the performance of the device by improvement of conventional base layer. The present invention discloses a hot electron device which can improve the performance of th... | 05/25/1999 |
| 5773842 | Resonant-tunnelling hot electron transistor A resonant-tunnelling hot transistor includes buffer layers undoped with impurities on either side of a collector or an emitter potential barrier having a quantum well structure. When a voltage is applied to the transistor, most of the potential drop occu... | 06/30/1998 |
| 5712491 | Lateral theta device A lateral THETA device formed of a sandwich of first and second layers of semiconductor material forming a heterojunction therebetween and a two dimensional carrier gas in the second layer. First and second spaced electrodes are disposed on the surface of... | 01/27/1998 |
| 5675157 | Transferred electron effect device A semiconductor body (2) has an active region (6) of n conductivity type formed of a material having a relatively low mass, high mobility conduction band main minimum and at least one relatively high mass, low mobility conduction band satellite minimum an... | 10/07/1997 |
| 5640022 | Quantum effect device A quantum effect device which operates in a mesoscopic region and eliminates the need for making monochromatic electron waves for the operation and moreover can operate in a high temperature region. The quantum effect device comprises a first waveguide fo... | 06/17/1997 |
| 5543749 | Resonant tunneling transistor A heterojunction semiconductor device includes an unipolar transistor having, a collector layer, a base layer, a collector side barrier layer provided between the collector layer and base layer, an emitter layer, and an emitter side barrier layer provided... | 08/06/1996 |
| 5459334 | Negative absolute conductance device and method A quantum wire embedded in another material or a quantum wire which is free standing. Specifically, the quantum wire structure is fabricated such that a quantum well semiconductor material, for example Gallium Arsenide (GaAS), is embedded in a quantum bar... | 10/17/1995 |
| 5448087 | Heterojunction bipolar transistor with graded base doping A heterojunction bipolar transistor with an exponentially graded base doping is disclosed, in addition to a technique for fabricating the transistor. In accordance with the preferred embodiment, the transistor employs a base with an exponentially graded B... | 09/05/1995 |
| 5442194 | Room-temperature tunneling hot-electron transistor A hot-electron transistor (10) is formed on substrate (12) having an outer surface. The present transistor includes subcollector layer (14) comprising Indium Gallium Arsenide formed outwardly from the outer surface of substrate (12). Collector barrier lay... | 08/15/1995 |
| 5436469 | Band minima transistor A room temperature high speed transistor that does not suffer deleterious effects from plasmon scattering. The transistor of the present invention comprises a semiconducting base region having a type of majority carriers and sub-band ordering associated w... | 07/25/1995 |
| 5418375 | Soft proton isolation process for an acoustic charge transport integrated circuit A method for electrically isolating an integrated circuit element in an acoustic charge transport device comprises the steps of providing a semi-insulating substrate; providing an epitaxial layer with a thickness and carrier concentration appropriate for ... | 05/23/1995 |
| 5386126 | Semiconductor devices based on optical transitions between quasibound energy levels A solid state, electronic, optical transition device includes a multiple-layer structure of semiconductor material which supports substantially ballistic electron/hole transport at energies above/below the conduction/valance band edge. The multiple layer ... | 01/31/1995 |
