Bizarre Patents
Decorative Jeweled Wheel Cover
An improved wheel is provided wherein decorative items such as gem stones are embedded in either the wheel surface, a special mounting section attached to the wheel surface, or to a spoke strap that wraps around each spoke and positions embedded gem stones on the outside surface of the spoke.
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| Number | Title | Issue Date |
| 5113231 | Quantum-effect semiconductor devices A novel combination of semiconductor heterojunctions provide a quantum-effect device with resonant or enhanced transmission of electrons (or holes) due to tunneling into a quantum well state in the valence (or conduction) band. A particular heterostructur... | 05/12/1992 |
| 5111265 | Collector-top type transistor causing no deterioration in current gain The collector-top type transistor according to the present invention has at least principal semiconductor layers of an emitter layer, tunnel barrier layers having electron affinities smaller than those of the emitter and a base, the base layer, and a coll... | 05/05/1992 |
| 5093699 | Gate adjusted resonant tunnel diode device and method of manufacture A gated resonant tunneling diode has a semiconductor mesa formed on a semiconductor substrate, a tunneling barrier layer between the mesa and the substrate, and a gate layered over the substrate about the mesa and aligned in close proximity to the tunneli... | 03/03/1992 |
| 5061970 | Energy band leveling modulation doped quantum well A superlattice structure comprising a host quantum well with a plurality of mini quantum wells formed therein is provided. The host quantum well has a confined energy state E2 which lies very near a lower band energy V1 of the host w... | 10/29/1991 |
| 5047822 | Electro-optic quantum well device A quantum well semiconductor device that is responsive to optical energy and operates by resonant field ionization of quantum confined excitons and comprises a semiconductor device including a multi-layered semiconductor structure fabricated on the substr... | 09/10/1991 |
| 5047810 | Optically controlled resonant tunneling electronic devices Resonant tunneling devices having an improved device switching speed are realized by including an optical control element rather than an electrical control element for switching the device from one stable state to the other. The resulting optoelectronic d... | 09/10/1991 |
| 5047661 | Superlattice precision voltage reference A precision voltage reference incorporating at least one superlattice resonant tunneling diode and support electronics. The precision voltage reference is stable as to temperature and radiation.... | 09/10/1991 |
| 5032877 | Quantum-coupled ROM A read only memory whererin information is encoded in the pattern of coupling of column lines to changes of quantum-coupled wells linked by resonant tunneling, which constitute rows. it is not strictly necessary that each chain of quantum wells itself con... | 07/16/1991 |
| 5031005 | Semiconductor device A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of |Ec3 -Ec1 |.apprxeq.|Ev3 -Ev5 |, where Ec3 is a resonant en... | 07/09/1991 |
| 5031015 | Solid-state heterojunction electron beam generator A solid-state electron beam generator has a hetero bipolar structure comprising an emitter region having a first band gap, a base region having a second band gap narrower than the first band gap, and a collector region having an electron-emitting surface.... | 07/09/1991 |
| 5017973 | Resonant tunneling device A resonant tunneling device includes a superlattice layer which includes an interlaminated structure of three semiconductor layers each having a narrow energy bandgap and serving as a quantum well layer and four semiconductor layers each having a wide ene... | 05/21/1991 |
| 4973858 | Resonant tunneling semiconductor devices Resonant tunneling semiconductor devices are disclosed useful for transport functions such as switching or amplification, and also for electro-optical conversions. In the structure of these devices, a central potential well is formed of an opposite conduc... | 11/27/1990 |
| 4969018 | Quantum-well logic using self-generated potentials A new kind of electronic logic circuit, wherein potential wells (e.g. islands of GaAs in an AlGaAs lattice) are made small enough that the energy levels of carriers within the wells are discretely quantized. This means that, when the bias between the well... | 11/06/1990 |
| 4961194 | Compound semiconductor device having nonalloyed ohmic contacts An ohmic contact layer is provided between an n-GaAs/n-AlGaAs/undoped GaAs double-heterojunction structure and source/drain electrodes in a high electron mobility transistor. The ohmic contact layer comprises Inx Ga1-x As or Ge. The ... | 10/02/1990 |
| 4959696 | Three terminal tunneling device and method A tunneling device (50) with the emitter (62) to collector (58) current transported by resonant tunneling through a quantum well (52) and controlled by carriers injected into the well (52) from a base (60) is disclosed. The injected carriers occupy a firs... | 09/25/1990 |
| 4958201 | Resonant tunneling minority carrier transistor A semiconductor device has an emitter potential barrier, a collector potential barrier, a base between the emitter potential barrier and the collector potential barrier, an emitter in contact, through the emitter potential barrier, with the base, and a co... | 09/18/1990 |
| 4939556 | Conductor device A semiconductor device is provided and which comprises a semiconductor having insulating layers and conductive layers laminated alternately. The semiconductor comprises an organic film, and electrodes are provided on the semiconductor.... | 07/03/1990 |
| 4929984 | Resonant tunnelling barrier structure device A resonant tunnelling barrier (RTB) structure device (e.g., diode), having a large peak-to-valley current density (Jp/Jv) ratio, includes an InP substrate and a RTB structure structure. The RTB structure is formed by a first doped layer of InP or In0... | 05/29/1990 |
| 4926232 | Resonant-tunneling bipolar transistor There is disclosed a resonant-tunneling bipolar transistor with a quantum-well comprising an inversion forming layer of an n-type gallium arsenide which is in contact with a first potential barrier layer of an undoped aluminum gallium arsenide partially d... | 05/15/1990 |
| 4912531 | Three-terminal quantum device A three-terminal quantum well device, which functions somewhat analogously to an MOS transistor. That is, the three terminals of the device can generally be considered as source, gate, and drain. An output contact is connected by tunneling to a number of ... | 03/27/1990 |
| 4912539 | Narrow-band-gap base transistor structure with dual collector-base barrier including a graded barrier A semiconductor structure, in the form of a resonant-tunneling transistor employs a quantum well region which is at a lower potential than the conduction band edge in the contacts, as a result of the lower band gap of InGaAs relative to GaAs. Thus, the fi... | 03/27/1990 |
| 4905056 | Superlattice precision voltage reference A precision voltage reference incorporating at least one superlattice resonant tunneling diode and support electronics. The precision voltage reference is stable as to temperature and radiation.... | 02/27/1990 |
| 4902912 | Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, ... | 02/20/1990 |
| 4872744 | Single quantum well optical modulator High speed optoelectronic devices which are suitable for use in an optical integrated circuit design. The devices comprise a monolithic planar structure wherein exciton-resonant light propagates along a single mode waveguide containing a single quantum we... | 10/10/1989 |
| 4868418 | Comparator circuit using resonant-tunneling transistor A comparator circuit comprises a differential amplifier supplied with a reference signal and an input signal. A resonant-tunneling transistor has a base supplied with an output signal of the differential amplifier. A collector is connected to a first powe... | 09/19/1989 |
| 4866488 | Ballistic transport filter and device An energy filter for carriers in semiconductor devices and devices with such filters are disclosed. The filter is a superlattice and the filtering action arises from the subbands and gaps in the conduction and valence bands of the superlattice. A heteroju... | 09/12/1989 |
| 4853753 | Resonant-tunneling device, and mode of device operation A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, ... | 08/01/1989 |
| 4851886 | Binary superlattice tunneling device and method A resonant tunneling diode (30) with anode (40) and cathode (32) separated by binary short-period superlattice tunneling barriers (34,38) with a quantum well (36) between is disclosed. Enhancement and depletion mode diodes are disclosed.... | 07/25/1989 |
| 4849799 | Resonant tunneling transistor A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there i... | 07/18/1989 |
| 4831340 | Harmonic multiplier using resonant tunneling device An harmonic multiplier comprising a resonant-tunneling diode responsive to a fundamental frequency source oscillator for generating odd harmonics of said fundamental frequency. The resonant-tunneling diode has a current/voltage characteristics curve exhib... | 05/16/1989 |
| 4825264 | Resonant tunneling semiconductor device A resonant tunneling semiconductor device having a large peak-to-valley current density Jp /Jv ratio comprises an InP substrate, a first contact compound semiconductor lattice-matched to Inp, a first barrier layer of (In0.52 | 04/25/1989 |
| 4816878 | Negative resistance semiconductor device A semiconductor device having a superlattice structure, which comprises at least one unit structure including first and third semiconductor layers as quantum well layers, and a second semiconductor layer as a barrier layer, which are arranged alternately ... | 03/28/1989 |
| 4799091 | Quantum device output switch Quantum-coupled devices, wherein at least two closely adjacent potential wells, (e.g. islands of GaAs in an AlGaAs lattice) are made small enough that the energy levels of carriers within the wells are discretely quantized. This means that, when the bias ... | 01/17/1989 |
| 4786957 | Negative differential resistance element A negative differential resistance element, the characteristics of which can be modulated externally, is provided by a sequential arrangement of an n-type GaAs emitter layer, a non-doped AlGaAs first barrier layer, an n-type GaAs base layer, a second barr... | 11/22/1988 |
| 4760579 | Quantum well laser with charge carrier density enhancement A resonant quantum well laser incorporates semiconductor barriers on one or both sides of the quantum well to increase the charge density within the quantum well. The composition of the injection layers can be tailored in a manner that the energies of the... | 07/26/1988 |
| 4751423 | Photocathode having a low dark current A photocathode having a low dark current comprises a first layer consisting of P+ type semiconductor material which is transparent to all wavelengths of the light to be detected, a second layer consisting of P+ type semiconductor in ... | 06/14/1988 |
| 4745452 | Tunneling transfer devices Coupled quantum wells in which charge carriers shift from well to well by means of tunneling transfer. The quantum wells are created by disposing a material with lower carrier energy between layers of material with higher carrier energy. The spacing betwe... | 05/17/1988 |
| 4721983 | Three terminal tunneling device A three terminal tunneling device analogous to a field effect transistor is disclosed. Preferred embodiments include a planar quantum well (52) with a gate insulator (56) and gate (58) on one surface and with a tunneling barrier (54) and source (62) and d... | 01/26/1988 |
| 4704622 | Negative transconductance device A resonant tunneling device having a one-dimensional quantum well comprises a semiconductor region capable of exhibiting one-dimensional quantization. The device comprises source and drain contact regions adjoining such semiconductor region as well as a g... | 11/03/1987 |
| 4688068 | Quantum well multijunction photovoltaic cell A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-reg... | 08/18/1987 |
