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"That the automobile has practically reached the limit of its development is suggested by the fact that during the past year no improvements of a radical nature have been introduced."
Scientific American ; Jan. 2 edition, 1909
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| Number | Title | Issue Date |
| 8125006 | Array of low resistive vertical diodes and method of production An integrated circuit comprising an array of memory cells and a corresponding production method are described. Each memory cell comprises a resistively switching memory element and a vertical selection diode coupled to a selection line in a selection line trench for... | 02/28/2012 |
| 8115239 | Electric device comprising phase change material The electric device according to the invention has a resistor comprising a layer of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first... | 02/14/2012 |
| 8093632 | Phase change memory device accounting for volume change of phase change material and method for manufacturing the same A phase change memory device includes a silicon substrate including a plurality of active regions which extend in a first direction and are arranged at regular intervals in a second direction perpendicular to the first direction. Switching elements are formed in eac... | 01/10/2012 |
| 7863655 | Phase change memory cells with dual access devices A self aligning memory device, with a memory element switchable between electrical property states by the application of energy, includes a substrate and word lines, at least the sides of the word lines covered with a dielectric material which defines gaps. An acces... | 01/04/2011 |
| 7851828 | Phase change memory cell with transparent conducting oxide for electrode contact material The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based ... | 12/14/2010 |
| 7589364 | Electrically rewritable non-volatile memory element and method of manufacturing the same A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11a, a second interlayer insulation layer 12 having a second through-hole 12a formed on the first interlayer insulatio... | 09/15/2009 |
| 7479671 | Thin film phase change memory cell formed on silicon-on-insulator substrate A memory cell includes a semiconductor feature and a phase change material. The semiconductor feature defines a groove that divides the semiconductor feature into a first electrode and a second electrode. The phase change material at least partially fills this groov... | 01/20/2009 |
| 7476917 | Phase-changeable memory devices including nitrogen and/or silicon dopants A phase-changeable memory device includes a substrate having a field effect transistor therein and a phase-changeable material electrically coupled to a source region of the field effect transistor. The phase-changeable material includes a chalcogenide composition c... | 01/13/2009 |
| 7440019 | Solid-state image pick-up device A plurality of low-sensitivity pixels 10 and a plurality of high-sensitivity pixels 20 are arranged like a tetragonal grid respectively, and are provided in positions shifted by ½ of an array pitch from each other in a row direction X and a column dir... | 10/21/2008 |
| 7425735 | Multi-layer phase-changeable memory devices A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase... | 09/16/2008 |
| 7423300 | Single-mask phase change memory element A memory device. An array of memory elements is formed on a semiconductor chip. A parallel array of word lines extends in a first direction, connecting each memory element to a data source, and a parallel array of bit lines extends in a second direction, connecting ... | 09/09/2008 |
| 7402851 | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes a... | 07/22/2008 |
| 7385235 | Spacer chalcogenide memory device The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings. ... | 06/10/2008 |
| 7381981 | Phase-change TaN resistor based triple-state/multi-state read only memory The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolati... | 06/03/2008 |
| 7374174 | Small electrode for resistance variable devices A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and... | 05/20/2008 |
| 7348620 | Forming phase change memories Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the... | 03/25/2008 |
| 7332370 | Method of manufacturing a phase change RAM device utilizing reduced phase change current To effectively lower the current required for changing a phase of a phase change layer in a phase change RAM device, metal pads are formed on a semiconductor substrate, and an oxide layer is formed on the metal pads. Nano-sized copolymer patterns aligned with the me... | 02/19/2008 |
| 7323734 | Phase changeable memory cells A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area... | 01/29/2008 |
| 7307267 | Electric device with phase change material and parallel heater The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the pha... | 12/11/2007 |
| 7294527 | Method of forming a memory cell The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the proces... | 11/13/2007 |
| 7265397 | CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process... | 09/04/2007 |
| 7233054 | Phase change material and non-volatile memory device using the same The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and ... | 06/19/2007 |
| 7214928 | Scanning unit for an optical position measuring device A scanning unit for an optical position measuring device, the scanning unit having a structured optoelectronic photodetector that includes: a semiconductor substrate, a plurality of radiation-sensitive detector areas, which are arranged next to each other on the sem... | 05/08/2007 |
| 7186595 | Solid picture element manufacturing method A solid picture element that transfers charges completely from a photodiode portion to an amplifying transistor portion to substantially eliminate residual images and methods of its manufacture are disclosed. The solid picture element includes a buried photodiode an... | 03/06/2007 |
| 7157754 | Solid-state imaging device and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 01/02/2007 |
| 7154549 | Solid state image sensor having a single-layered electrode structure Provided is a CCD image sensor wherein driving power and power consumption are reduced without increasing unusable regions. Photodiodes are arranged in a honeycomb form. Each vertical charge-transfer channel is made in such a manner that invasion portions, which inv... | 12/26/2006 |
| 7147050 | Recuperator construction for a gas turbine engine A counter-flow recuperator formed from annular arrays of recuperator core segments. The recuperator core segments are formed from two opposing sheets of fin fold material coined to form a primary surface zone disposed between two flattened manifold zones. Each prima... | 12/12/2006 |
| 7132702 | Image sensor In the present invention, a charge transfer unit is arranged on a first-plane side of a thinly-formed semiconductor base. Charge accumulating units are arranged on a second-plane side, the opposite side. A depletion prevention layer is arranged closer to the second-... | 11/07/2006 |
| 7122824 | Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of ... | 10/17/2006 |
| 7119353 | Electric device with phase change material and method of manufacturing the same The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change ma... | 10/10/2006 |
| 7115927 | Phase changeable memory devices Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that includes nitrogen atoms. First and second electrodes are electrically connecte... | 10/03/2006 |
| 7112836 | Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resulting memory element can be drive... | 09/26/2006 |
| 7075131 | Phase change memory device A semiconductor device includes a first memory cell having a substrate, an insulation layer disposed over the substrate, a first polysilicon gate formed over the insulation layer, at least one oxide spacer formed contiguous with one vertical sidewall of the first po... | 07/11/2006 |
| 7067837 | Phase-change memory devices Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration. ... | 06/27/2006 |
| 7065873 | Recuperator assembly and procedures A construction of recuperator core segments is provided which insures proper assembly of the components of the recuperator core segment, and of a plurality of recuperator core segments. Each recuperator core segment must be constructed so as to prevent nesting of fi... | 06/27/2006 |
| 7030410 | Resistance variable device A method of precluding diffusion of a metal into adjacent chalcogenide material upon exposure to a quanta of actinic energy capable of causing diffusion of the metal into the chalcogenide material includes forming an actinic energy blocking material layer over the m... | 04/18/2006 |
| 7015520 | Charge-coupled devices having efficient charge transfer rates A camera includes a charge-coupled device having a substrate or well of a first conductivity type; a buried channel of a second conductivity type; a dielectric disposed on the substrate; six gates disposed on the dielectric that are space oriented sequentially 1 | 03/21/2006 |
| 6995388 | Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode A phase changeable memory device includes a substrate having a lower electrode disposed thereon. A phase changeable pattern is disposed on the lower electrode and an upper electrode is disposed on the phase changeable pattern that has a tip that extends therefrom an... | 02/07/2006 |
| 6987294 | Charge-coupled device and method of fabricating the same A charge-coupled device capable of attaining excellent performance with a single-layer gate electrode structure is obtained. This charge-coupled device, having a single-layer gate electrode structure, comprises a gate insulator film formed on a semiconductor substra... | 01/17/2006 |
| 6970197 | CCD imaging device and driving method thereof One horizontal CCD register is provided for a plurality of vertical CCD registers. The horizontal CCD register has horizontal transfer electrodes in such a manner that transfer electrodes that are provided for each pair of vertical CCD registers adjacent to each oth... | 11/29/2005 |
