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| Number | Title | Issue Date |
| 8039876 | Metal oxide semiconductor (MOS) transistors having a recessed gate electrode A metal oxide semiconductor (MOS) includes an isolation layer disposed in a semiconductor substrate to define an active region. A source region and a drain region are disposed on both sides of the active region such that a first direction is defined from the source ... | 10/18/2011 |
| 7982247 | Transistor with gain variation compensation A semiconductor device and method of making comprises providing an active device region and an isolation region, the isolation region forming a boundary with the active device region. A patterned gate material overlies the active device region between first and seco... | 07/19/2011 |
| 7692217 | Matched analog CMOS transistors with extension wells One embodiment of the invention relates to an integrated circuit. The integrated circuit includes a first matched transistor comprising: a first source region, a first drain region formed within a first drain well extension, and a first gate electrode having lateral... | 04/06/2010 |
| 7436384 | Data driving apparatus and method for liquid crystal display A data driving apparatus for a liquid crystal display includes a plurality of data driving integrated circuits adjacent to a liquid crystal display panel for converting input pixel data into pixel voltage signals, one or more multiplexor arrays provided adjacent to ... | 10/14/2008 |
| RE40409 | Photoelectric converter having a light receiving portion with an improved readout gate A photoelectric converter with improved charge transfer efficiency from a light receiving portion. The photoelectric converter includes a light receiving portion having an output end and a gate portion having a first side and a second side that both define a readout... | 07/01/2008 |
| 7391087 | MOS transistor structure and method of fabrication An MOS device comprising a gate dielectric formed on a first conductivity type region. A gate electrode formed on the gate dielectric. A pair of sidewall spacers are formed along laterally opposite sidewalls of the gate electrode. A pair of deposited silicon or sili... | 06/24/2008 |
| 7348238 | Bottom electrode for memory device and method of forming the same Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate keyholes in the contacts by capping and encapsulating the conductive ... | 03/25/2008 |
| 7332618 | Organometallic precursor compounds This invention relates to organometallic precursor compounds represented by the formula (H)mM(R)n wherein M is a metal or metalloid, R is the same or different and is a substituted or unsubstituted, saturated or unsaturated, heterocyclic radica... | 02/19/2008 |
| 7329926 | Semiconductor device with constricted current passage A semiconductor device including a gate located over a semiconductor substrate and a source/drain region located adjacent the gate. The source/drain region is bounded by an isolation structure that includes a constricted current passage between the gate and the sour... | 02/12/2008 |
| 7157754 | Solid-state imaging device and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 01/02/2007 |
| 7119379 | Semiconductor device A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region; a stopper region wh... | 10/10/2006 |
| 7105876 | Reticulated gate CCD pixel with diagonal strapping A sensor includes an array of pixels organized in rows and columns and a plurality of metal busses overlaying the array of pixels. A first column of pixels includes a proximal set of first pixels and a distal set of first pixels separated by a first jog region. A se... | 09/12/2006 |
| 7002713 | Image processing apparatus An image processing apparatus capable of acquiring a high resolution image without a reduction in sensitivity includes a plurality of sensor chips connected to one another, each sensor chip including a first pixel row and a second pixel row, which are formed on the ... | 02/21/2006 |
| 6985182 | Imaging device with vertical charge transfer paths having appropriate lengths and/or vent portions In a solid-state imaging device, a plurality of vertical charge transfer paths is arranged at a horizontal pitch A within a photoelectric conversion region, and at a pitch B that is smaller than the pitch A in a portion where the signals are input into the horizonta... | 01/10/2006 |
| 6933972 | MOS type image pickup device having pixel interleaved array layout and one analog to digital conversion unit provided per each pair of adjacent photoelectric conversion columns A number of photoelectric conversion elements are disposed in a plurality of rows and columns in a pixel shift layout, and an analog/digital conversion unit is provided per two photoelectric conversion element columns to form a MOS type solid-state image pickup devi... | 08/23/2005 |
| 6933976 | Solid-state image pickup device In a solid-state image pickup device in which a large number of photoelectric converters are disposed in a shifted-pixel layout, a charge transfer channel configuring a vertical transfer CCD includes a section having a first width and being contiguous to a readout g... | 08/23/2005 |
| 6904246 | Image heating apparatus An image heating apparatus is provided, which includes: a heating member for heating an image on a recording material; a temperature control unit for controlling a temperature of the heating member to a predetermined set temperature; a waiting state setting unit for... | 06/07/2005 |
| 6888182 | Thin film transistor, method for manufacturing same, and liquid crystal display device using same A thin film transistor of the present invention is provided with (i) a plurality of divided channel regions formed under a gate electrode, and (ii) divided source regions and divided drain regions between which each of the divided channel regions is sandwiched, the ... | 05/03/2005 |
| 6818985 | Embedded antenna and semiconductor die on a substrate in a laminate package According to one exemplary embodiment, a structure comprises a laminate substrate having a top surface for receiving a semiconductor die. The structure further comprises an antenna element situated on the top surface of the laminate substrate, where the antenna elem... | 11/16/2004 |
| 6800529 | Method for fabricating semiconductor transistor device The present invention relates to a method for fabricating a semiconductor transistor device. The method comprises: forming a first conductive type well in a semiconductor substrate having a device isolation film formed thereon; implanting first conductive type impur... | 10/05/2004 |
| 6794692 | Solid-state image pick-up device In a solid-state image pick-up device of FIG. 1, a plurality of photoelectric converting devices 100 having almost square light receiving regions are provided like a tetragonal grid over the surface of a semiconductor substrate and a plurality of verti... | 09/21/2004 |
| 6727559 | Compound semiconductor device A local oscillation FET has a source connecting pad, a drain connecting pad and a gate connecting pad. The source connecting pad occupies one corner of a substrate, and the drain and gate connecting pads are placed at the neighboring corners so that the three connec... | 04/27/2004 |
| 6724022 | Solid-state imaging device Disclosed herein is a solid-state imaging device having an effective pixel portion, an optical black portion, and a charge transfer register portion commonly provided in the effective pixel portion and the optical black portion, wherein the register width of a porti... | 04/20/2004 |
| 6720593 | Charge-coupled device having a reduced width for barrier sections in a transfer channel A charge-coupled device (CCD) includes first-level transfer electrodes and second-level transfer electrodes alternately arranged along a transfer channel, wherein charge storage sections underlying the first-level transfer electrodes have a larger width than barrier... | 04/13/2004 |
| 6717190 | Solid-state image pick-up device A honeycomb CCD, whose light receiving portion and a certain light receiving portion 105 adjoining thereto are arranged at a position to be shifted by half a pixel pitch in line and row directions, has charge transfer electrodes 111-114 formed of doubl... | 04/06/2004 |
| 6528831 | Solid-state image pickup device As solid-state image pickup devices are spread in the world, improvement of performance and reduction of the production cost thereof are required. It is difficult for the solid-state image pickup devices of a configuration of the prior art to meet the req... | 03/04/2003 |
| 6518656 | Reduced thickness optical image pickup device with improved sealing and method of making same An image pickup device is provided with a reduced profile. There is provided a circuit board that is formed with a predetermined circuit pattern having bonding portions and which has a through hole, a pickup element that has a light-receiving portion and ... | 02/11/2003 |
| 6512254 | Solid-state image pickup device In a solid-state image pickup device, a transfer register 10 is provided with an overflow control gate OFCG and an overflow drain OFD, and the gate electrode 12A of the overflow control gate OFCG is formed so as to be superposed on the lower-layer electro... | 01/28/2003 |
| 6476430 | Integrated circuit In transistors with sub-micron channels, short-channel effects, such as a lowering of the threshold voltage, are usually suppressed by means of a halo (or pocket) implant in the source/drain regions, which operation is performed jointly with the LDD impla... | 11/05/2002 |
| 6476426 | Electronic component and method for improving pixel charge transfer in the electronic component An electronic component having an image sensing device (41, 71, 86, 132, 182, 212) and a method for improving pixel charge transfer in the image sensing device (41, 71, 86, 132, 182, 212). The image sensing device (41, 71, 86, 132, 182, 212) has a transfe... | 11/05/2002 |
| 6326655 | Solid state imaging device having a gate electrode formed over a potential dip To improve such a fact that a signal electric charge from a sensor unit in an MOS imaging device can not be completely read out by a low read-out voltage. To this end, in an arrangement in which a plurality of unit pixels each of which has a sensor unit (... | 12/04/2001 |
| 6310369 | Charge-to-voltage converter with adjustable conversion factor In a floating diffusion output type or a floating gate output type charge-to-voltage converter, the floating diffusion or the floating gate is coupled to one or more diffusion regions by means of one or more switch elements, and such elements are selectiv... | 10/30/2001 |
| 6281142 | Dielectric cure for reducing oxygen vacancies A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectri... | 08/28/2001 |
| 6157053 | Charge transfer device and method of driving the same There is provided a charge transfer device including (a) a charge transfer channel for transferring signal charges therethrough, (b) a floating diffusion region for accumulating therein charges transferred from the charge transfer channel, (c) a field eff... | 12/05/2000 |
| 6091092 | Driving-gate charge-coupled device The invention relates to a charge-coupled device. Such devices comprise at least one insulated conducting gate (3) connecting two semiconductor zones. According to the invention, each insulated conducting gate (3) has a width progressively increasing from... | 07/18/2000 |
| 6087685 | Solid-state imaging device A solid-state imaging device includes a plurality of sensor portions, and a vertical shift register corresponding to each of a series of sensor portions. A transfer electrode of the vertical shift register is formed of a first electrode and a second elect... | 07/11/2000 |
| 6078069 | Bidirectional horizontal charge transfer device A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area,an insulating layer formed between the f... | 06/20/2000 |
| 6060739 | Non-volatile semiconductor memory device having a floating gate inside a grove A semiconductor well region has a groove into which a block-shaped floating gate is formed. The block-shaped floating gate has a bottom surface facing a bottom surface of the semiconductor well region served as a first channel region, a first side surface... | 05/09/2000 |
| 5959318 | Solid state image pickup device with polygates A solid state image pickup device includes a semiconductor substrate, a CCD channel region in the semiconductor substrate, a plurality of polygates over the CCD channel regions, and a photoelectric conversion region having a portion above an uppermost sur... | 09/28/1999 |
| 5923061 | CCD charge splitter An apparatus and method of equalizing a first and second charge packet. The apparatus includes a charge splitter for splitting the first charge packet into a third charge packet on the first side of the charge splitter and a fourth charge packet on the se... | 07/13/1999 |
