Did You Know...
...that the Band-Aid Bandage was invented by a Johnson & Johnson employee whose wife had cut herself? Earl Dickson's wife was rather accident prone, so he set out to develop a bandage that she could apply without help. He placed a small piece of gauze in the center of a small piece of surgical tape, and what we know today as the Band Aid bandage was born!
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| Number | Title | Issue Date |
| 5233205 | Quantum wave circuit A novel concept and structure of a semiconductor circuit are disclosed which utilize the fact that the interaction between the carriers such as electrons and holes supplied in a meso-scopic region and the potential field formed in the meso-scopic region l... | 08/03/1993 |
| 5227644 | Heterojunction field effect transistor with improve carrier density and mobility A field effect transistor comprising first and second electrodes, semiconductor layers connected to these electrodes to form a carrier channel between them and a control electrode is provided. Said semiconductor layers consisting essentially of: (a) a fir... | 07/13/1993 |
| 5225357 | Low P+ contact resistance formation by double implant The method of manufacture of a PMOS integrated circuit having a feature size in the order of one micron or less is done by providing, on a silicon substrate, a pattern of silicon gate electrodes over a gate dielectric. Implanting of BF2 + ions ... | 07/06/1993 |
| 5223724 | Multiple channel high electron mobility transistor An FET with multiple channels to provide a substantially linear transfer characteristic. The widths and carrier concentrations of the channels, and the depths of the channels below the gate of the FET, are adjusted such that a substantially linear gate vo... | 06/29/1993 |
| 5219772 | Method for making field effect devices with ultra-short gates The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure is grown vertically on a su... | 06/15/1993 |
| 5216262 | Quantum well structures useful for semiconductor devices A quantum well structure useful for semiconducting devices comprises two barrier regions and a thin epitaxially grown monocrystalline semiconductor material quantum well sandwiched between said barrier regions. Each barrier region consists essentially of ... | 06/01/1993 |
| 5212404 | Semiconductor device having a vertical channel of carriers A semiconductor device comprises a substrate having a stepped upper major surface, an emitter layer of a semiconductor material provided on the stepped upper major surface of the substrate and having a corresponding stepped upper major surface, a base lay... | 05/18/1993 |
| 5198879 | Heterojunction semiconductor device A heterojunction semiconductor device utilizing a quantum-mechanical effect comprises a first compound semiconductor (e.g., AlGaAs) layer and a second compound semiconductor (e.g., GaAs) layer having an electron affinity different from that of the first s... | 03/30/1993 |
| 5162877 | Semiconductor integrated circuit device and method of producing same A semiconductor integrated circuit device comprising a negative differential resistance element, such as an RHET and RBT, and a field effect transistor, such as an SBFET and heterojunction type FET, which are formed on the same semiconductor substrate, a ... | 11/10/1992 |
| 5161235 | Field-effect compound semiconductive transistor with GaAs gate to increase barrier height and reduce turn-on threshold Multi-layer heterostructure transistors, and methods for making them, involve the use of a p+ doped GaAs gate for an n-channel device to increase barrier height and reduce turn-on threshold. A p++-i-p substrate helps to reduce source and drain capacitance... | 11/03/1992 |
| 5157467 | Quantum interference device and method for processing electron waves utilizing real space transfer A quantum interference device includes a source, a drain and waveguides with quantum structures between the source and the drain. An electron wave from the source that is confined in the waveguides is split into plural electron waves. The phase difference... | 10/20/1992 |
| 5153688 | Method and device for controlling interference of electron waves by light in which a transverse magnetic wave is applied An electron wave interference device controlled by a light is disclosed. The electron wave interference device includes a first channel to propagate an electron wave, a second channel arranged with an interval from the first channel for propagating an ele... | 10/06/1992 |
| 5148242 | Electron-wave coupled semiconductor switching device An electron-wave coupled semiconductor device, in particular a semiconductor switching device, comprises a first layer of semiconducting material having a first bandgap, and a second layer of material formed on said first semiconducting layer and having a... | 09/15/1992 |
| 5142349 | Self-doped high performance complementary heterojunction field effect transistor A heterojunction field effect transistor structure having a plurality of vertically stacked field effect devices. Two or more devices having electrically independent source and drain regions are formed such that a single gate electrode controls current fl... | 08/25/1992 |
| 5130766 | Quantum interference type semiconductor device A quantum interference type semiconductor device is composed of at least one bifurcated branch conductive channel with a heterojunction in a semiconductor with a band discontinuity that produced a potential well between two semiconductor regions into whic... | 07/14/1992 |
| 5111255 | Buried channel heterojunction field effect transistor A high transconductance field effect transistor is realized by controlling the doping level in a conducting channel buried beneath a heterointerface. In one exemplary embodiment, a channel comprising an undoped, high mobility, narrow band gap quantum well... | 05/05/1992 |
| 5105232 | Quantum field-effect directional coupler A quantum field-effect directional coupler is described comprised of two quantum waveguides closely spaced apart with an adjacent gate electrode over the space between waveguides. The coupling of electron probability density between waveguides is controll... | 04/14/1992 |
| 5099295 | Compound semiconductor device which utilizes an electron supply layer which has a graded composition so that a constituent varies in percentage composition from one side to the other A compound semiconductor device having a channel layer and an electron supply layer and using a two-dimensional electron gas. The channel layer near the interface between the channel layer and the electron supply layer is formed as a graded layer. It is p... | 03/24/1992 |
| 5093699 | Gate adjusted resonant tunnel diode device and method of manufacture A gated resonant tunneling diode has a semiconductor mesa formed on a semiconductor substrate, a tunneling barrier layer between the mesa and the substrate, and a gate layered over the substrate about the mesa and aligned in close proximity to the tunneli... | 03/03/1992 |
| 5089862 | Monocrystalline three-dimensional integrated circuit A monocrystalline monolith contains a 3-D array of interconnected lattice-matched devices (which may be of one kind exclusively, or that kind in combination with one or more other kinds) performing digital, analog, image-processing, or neural-network func... | 02/18/1992 |
| 5023674 | Field effect transistor A field effect transistor includes a semiconductor substrate, first and second semiconductor layers formed on the semiconductor substrate, and third semiconductor layers located between the first and second semiconductor layers. The third semiconductor la... | 06/11/1991 |
| 4972248 | Multi-layer circuit structure with thin semiconductor channels A three-dimensional multiple-circuit layer semiconductor device has multiple circuit layers vertically stacked on a single crystal wafer. Thick single-crystal InSb film serves as conductors and contacts, thin single-crystal InSb film serves as semiconduct... | 11/20/1990 |
| 4962050 | GaAs FET manufacturing process employing channel confining layers A high speed GaAs FET is provided by forming a sandwiched GaAs channel between AlGaAs layers and employing an Si implant to provide channel doping for the GaAs channel. The poor activation efficiency of Si in AlGaAs relative to its activation efficiency i... | 10/09/1990 |
| 4962410 | QUADFET-A novel field effect transistor A quantum diffraction field effect transistor ("QUADFET"), a new class of semiconductors which exploits the phenomenon of electron diffraction to produce novel circuit characteristics.... | 10/09/1990 |
| 4961194 | Compound semiconductor device having nonalloyed ohmic contacts An ohmic contact layer is provided between an n-GaAs/n-AlGaAs/undoped GaAs double-heterojunction structure and source/drain electrodes in a high electron mobility transistor. The ohmic contact layer comprises Inx Ga1-x As or Ge. The ... | 10/02/1990 |
| 4907045 | Resonant-tunneling functional device using multiple negative differential resistances There is described a functional device constructed with a semi-insulating substrate, a channel layer of a conductive compound semiconductor formed on the semi-insulating substrate, a channel electrode coupled to a first area of the channel layer, a gate e... | 03/06/1990 |
| 4903092 | Real space electron transfer device using hot electron injection Real space hot electron transfer devices using hot electron transfer between two conducting channels are described.... | 02/20/1990 |
| 4893161 | Quantum-well acoustic charge transport device An improved acoustic charge transport device having an acoustic wave passing through a piezoelectric semiconductor is improved by utilizing heterostructure Quantum-wells for confining charge packets.... | 01/09/1990 |
| 4882608 | Multilayer semiconductor device having multiple paths of current flow A multilayer semiconductor structure is disclosed having a plurality of conducting layers separated by a barrier layer. A common contact extends from an upper exposed surface to all the layers of the device and a surface contact extends from the upper sur... | 11/21/1989 |
| 4862228 | High mobility semiconductor devices A high mobility p channel semiconductor device (such as a field-effect transistor) is suitable for operation at room temperature, for example in a circuit with an n channel device. Whereas hole modulation doping both in single heterojunction and in hetero... | 08/29/1989 |
| 4860064 | Transistor comprising a 2-dimensional carrier gas collector situated between emitter and gate A previously ignored property of a degenerate 2-dimensional gas of charge carriers in a quantum well (to be termed the quantum-capacitance effect) makes possible a novel class of transistors. In these devices the collector (a quantum well having high tran... | 08/22/1989 |
| 4833508 | High electron mobility device with intrinsic AlAs/GaAs superlattice separator region A field effect semiconductor device which utilizes a 2DEG and is composed of a semi-insulating GaAs substrate; an i-type GaAs active layer; a superlattice structure layer which comprises a first i-type AlAs thin layer, a GaAs thin layer doped with an Si a... | 05/23/1989 |
| 4827320 | Semiconductor device with strained InGaAs layer A strained Iny Gal-y As layer is employed in a GaAs/Alx Gal-x As transistor. Since the bandgap of Iny Gal-y As is much smaller than that of GaAs, there is no need for a troublesome large-mo... | 05/02/1989 |
| 4823171 | Compound semiconductor device A compound semiconductor device having a channel layer which is fabricated by alternately laminating an Inx Ga1-x As compound semiconductor layer (0.7ࣘxࣘ1.0) with thickness of 16 atomic planes or less, and an Iny Ga | 04/18/1989 |
| 4819037 | Semiconductor device In a semiconductor device having mainly vertical semiconductor elements, a plurality of semiconductor elements are formed in spaced relationship from each other on an insulation layer formed on a substrate and therefore completed isolated electrically fro... | 04/04/1989 |
| 4780748 | Field-effect transistor having a delta-doped ohmic contact A field-effect transistor is created on a GaAs semi-insulating substrate using molecular beam epitaxy by fabricating a delta-doped monolayer with a silicon dopant between two undoped GaAs layers grown over the semi-insulating substrate. A plurality of del... | 10/25/1988 |
| 4761620 | Optical reading of quantum well device Optical apparatus is disclosed wherein narrow line width light from a source is directed through the substrate of a semiconductor structure and reflected from the gate electrode of a field effect transistor element fabricated on the surface of the semicon... | 08/02/1988 |
| 4733282 | One-dimensional quantum pipeline type carrier path semiconductor devices A semiconductor superlattice is provided with a one-dimensional quantum pipeline type carrier path. The pipeline is formed at the intersection of different energy level layers of the superlattice. Conductivity modulation through an adjacent exposed surfac... | 03/22/1988 |
| 4721983 | Three terminal tunneling device A three terminal tunneling device analogous to a field effect transistor is disclosed. Preferred embodiments include a planar quantum well (52) with a gate insulator (56) and gate (58) on one surface and with a tunneling barrier (54) and source (62) and d... | 01/26/1988 |
| 4575924 | Process for fabricating quantum-well devices utilizing etch and refill techniques The present invention teaches a process for fabrication of quantum-well devices, in which the quantum-wells are configured as small islands of GaAs in an AlGaAs matrix. Typically these islands are roughly cubic, with dimensions of about 100 Angstroms per ... | 03/18/1986 |
