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...that the first rickshaw was invented in 1869 by an American Baptist minister, the Rev. E. Jonathan Scobie, to transport his invalid wife around the streets of Yokohama?
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| Number | Title | Issue Date |
| 8183558 | Compound semiconductor device with T-shaped gate electrode A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electro... | 05/22/2012 |
| 8154011 | Thin film transistor A thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, a channel and a gate electrode. The drain electrode is spaced from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and... | 04/10/2012 |
| 8154012 | Thin film transistor A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The g... | 04/10/2012 |
| 8143616 | Making a structure A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface. ... | 03/27/2012 |
| 8124961 | Single electron transistor A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the nanowire channel, the oxide channel areas insulating at least one por... | 02/28/2012 |
| 8120015 | Resonant structure comprising wire and resonant tunneling transistor A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and... | 02/21/2012 |
| 8106382 | Field effect transistor A source electrode 105 which is connected to a portion of at least one semiconductor nanostructure 103 among a plurality of semiconductor nanostructures, a drain electrode 106 connected to another portion of the semiconductor nanostructure 10... | 01/31/2012 |
| 8093584 | Self-aligned replacement metal gate process for QWFET devices A self-aligned replacement metal gate QWFET device comprises a III-V quantum well layer formed on a substrate, a III-V barrier layer formed on the quantum well layer, a III-V etch stop layer formed on the III-V barrier layer, a III-V source extension region formed o... | 01/10/2012 |
| 8053760 | Thin film transistor A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer includes a carbon nanotube structure comprised of carbon nanotubes.... | 11/08/2011 |
| 8026509 | Tunnel field effect transistor and method of manufacturing same A TFET includes a source region (110, 210), a drain region (120, 220), a channel region (130, 230) between the source region and the drain region, and a gate region (140, 240) adjacent to the channel region. The source region contains a f... | 09/27/2011 |
| 8022393 | Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process The disclosure pertains to a method for making a nanoscale filed effect transistor structure on a semiconductor substrate. The method comprises disposing a mask on a semiconductor upper layer of a multi-layer substrate, and removing areas of the upper layer not cove... | 09/20/2011 |
| 8017934 | Carbon nanotube based integrated semiconductor circuit Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Elect... | 09/13/2011 |
| 8017933 | Compositionally-graded quantum-well channels for semiconductor devices A compositionally-graded quantum well channel for a semiconductor device is described. A semiconductor device includes a semiconductor hetero-structure disposed above a substrate and having a compositionally-graded quantum-well channel region. A gate electrode is di... | 09/13/2011 |
| 8013324 | Structurally stabilized semiconductor nanowire In one embodiment, a semiconductor nanowire having a monotonically increasing width with distance from a middle portion toward adjoining semiconductor pads is provided. A semiconductor link portion having tapered end portions is lithographically patterned. During th... | 09/06/2011 |
| 8008649 | Incorporating gate control over a resonant tunneling structure in CMOS to reduce off-state current leakage, supply voltage and power consumption A semiconductor device and method for fabricating a semiconductor device incorporating gate control over a resonant tunneling structure. The semiconductor device includes a source terminal, a gate terminal, a drain terminal, and a resonant tunneling structure locate... | 08/30/2011 |
| 8008650 | Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound 6 is for... | 08/30/2011 |
| 7989800 | Nanowire field effect junction diode A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An ... | 08/02/2011 |
| 7973305 | Thin film transistor A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The g... | 07/05/2011 |
| 7952088 | Semiconducting device having graphene channel The present invention, in one embodiment, provides a semiconductor device including a substrate having an dielectric layer; at least one graphene layer overlying the dielectric layer; a back gate structure underlying the at least one graphene layer; and a semiconduc... | 05/31/2011 |
| 7928426 | Forming a non-planar transistor having a quantum well channel In one embodiment, the present invention includes an apparatus having a substrate, a buried oxide layer formed on the substrate, a silicon on insulator (SOI) core formed on the buried oxide layer, a compressive strained quantum well (QW) layer wrapped around the SOI... | 04/19/2011 |
| 7928427 | Semiconductor device with group III-V channel and group IV source-drain and method for manufacturing the same The present invention is related to a semiconductor device with group III-V channel and group IV source-drain and a method for manufacturing the same. Particularly, the energy level density and doping concentration of group III-V materials are increased by the heter... | 04/19/2011 |
| 7915608 | Scalable quantum well device and method for manufacturing the same A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the quantum well region, a source and drain region adjacent to the gate ... | 03/29/2011 |
| 7910917 | Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels A microelectronic device provided with one or more quantum wires, able to form one or more transistor channels, and optimized in terms of arrangement, shape, and/or composition. A method for fabricating the device includes forming, in one or more thin layers resting... | 03/22/2011 |
| 7906776 | RF circuits including transistors having strained material layers Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration ex... | 03/15/2011 |
| 7880163 | Nanostructure insulated junction field effect transistor A novel nanostructure device operating in Junction Field Effect Transistor (JFET) mode is provided that avoids the majority of the carriers that interact with the interface (e.g. surface roughness, high-k scattering). ... | 02/01/2011 |
| 7858965 | Nanowire heterostructures The present invention generally relates to nanoscale heterostructures and, in some cases, to nanowire heterostructures exhibiting ballistic transport, and/or to metal-semiconductor junctions that that exhibit no or reduced Schottky barriers. One aspect of the invent... | 12/28/2010 |
| 7851783 | Method and apparatus for fabricating a carbon nanotube transistor A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube between drain and source electrodes of the transistor and doping portions ... | 12/14/2010 |
| 7842940 | Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost A semiconducting material that has all the advantages of prior art SOI substrates including, for example, low parasitic capacitance and leakage, without having floating body effects is provided. More specifically, the present invention provides a Semiconductor-on-Po... | 11/30/2010 |
| 7825402 | Excitonic signal processing optically interfaced electrically controlled devices The present invention presents devices and methods for localized control and transport of excitons as well as separate processing of holes and electrons in a device with an optical input and an optical output. An example optoelectronic device includes a coupled or w... | 11/02/2010 |
| 7807990 | Semiconductor device A semiconductor device includes: a p-channel MIS transistor including: a first insulating layer formed on a semiconductor region between a source region and a drain region, and containing at least silicon and oxygen; a second insulating layer formed on the first ins... | 10/05/2010 |
| 7718995 | Nanowire, method for fabricating the same, and device having nanowires A nanowire according to the present invention includes: a nanowire body made of a crystalline semiconductor as a first material; and a plurality of fine particles, which are made of a second material, including a constituent element of the semiconductor, and which a... | 05/18/2010 |
| 7709827 | Vertically integrated field-effect transistor having a nanostructure therein The invention relates to a vertical integrated component, a component arrangement and a method for production of a vertical integrated component. The vertical integrated component has a first electrical conducting layer, a mid layer, partly embodied from dielectric ... | 05/04/2010 |
| 7709828 | RF circuits including transistors having strained material layers Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration ex... | 05/04/2010 |
| 7696512 | Electron device and process of manufacturing thereof The electron device of the present invention has a carbon-based linear structural body including at least one conductive particle, a first electrode and a second electrode disposed at both end of the carbon-based linear structural body, so as to subject the carbon-b... | 04/13/2010 |
| 7683364 | Gated quantum resonant tunneling diode using CMOS transistor with modified pocket and LDD implants A gated resonant tunneling diode (GRTD) is disclosed including a metal oxide semiconductor (MOS) gate over a gate dielectric layer which is biased to form an inversion layer between two barrier regions, resulting in a quantum well less than 15 nanometers wide. Sourc... | 03/23/2010 |
| 7659538 | Layered composite film incorporating a quantum dot shift register Quantum dots are positioned within a layered composite film to produce one-dimensional and multi-dimensional shift registers within the film. Charge carriers are driven into the quantum dots by energy in connected control paths. The charge carriers are trapped in th... | 02/09/2010 |
| 7619241 | Variable capacitor single-electron transistor including a P-N junction gate electrode The present invention provides a single-electron transistor device 100. The device comprises a source 105 and drain 110 located over a substrate 115 and a quantum island 120 situated between the source and drain, to form tunnel jun... | 11/17/2009 |
| 7608854 | Electronic device and method of making the same An electronic device includes a primary nanowire of a first conductivity type, and a secondary nanowire of a second conductivity type extending outwardly from the primary nanowire. A doped region of the second conductivity type extends from the secondary nanowire in... | 10/27/2009 |
| 7566898 | Buffer architecture formed on a semiconductor wafer In one embodiment, the present invention includes an apparatus for forming a transistor that includes a silicon (Si) substrate, a dislocation filtering buffer formed over the Si substrate having a first buffer layer including gallium arsenide (GaAs) nucleation and b... | 07/28/2009 |
| 7550759 | Capacitive single-electron transistor The invention is a sensitive measuring instrument, which is principally applied to quantum computation, especially to measurement of quantum bits consisting of superconducting micro and nano-structures. The state of a quantum bit is expressed as the voltage-time int... | 06/23/2009 |
