Microwave Oven With Removable Storage Cassette in Dashboard of Motor Vehicle
A microwave oven adapted for use within a motor vehicle dashboard area. The microwave oven has a removable storage cassette, and slidable platforms for securing and serving containers of beverages and foods.
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| Number | Title | Issue Date |
| 8188519 | Solid-state imaging device, drive method of solid-state imaging device, and imaging apparatus A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer trans... | 05/29/2012 |
| 8093631 | Non-volatile memory device and method for fabricating the same A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a gate structure on a substrate, the gate structure including a first insulation layer, a first electrode layer for a floating gate and a second insulation ... | 01/10/2012 |
| 8084791 | Non-volatile memory device including nitrogen pocket implants and methods for making the same In a non-volatile memory structure, the source/drain regions are surrounded by a nitrogen-doped region. As a result, an interface between the substrate and the charge trapping layer above the nitrogen-doped region is passivated by a plurality of nitrogen atoms. The ... | 12/27/2011 |
| 8013365 | CMOS image sensor configured to provide reduced leakage current A complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) includes a semiconductor substrate including a photodiode therein as a light sensing unit. A floating diffusion region of a first conductivity type is provided in the semiconductor substrate, and is... | 09/06/2011 |
| 7851827 | Back-side trapped non-volatile memory device Non-volatile memory devices and arrays are described that utilize back-side trapped floating node memory cells with band-gap engineered gate stacks with asymmetric tunnel barriers. Embodiments of the present invention allow for direct tunneling programming and effic... | 12/14/2010 |
| 7808018 | Solid-state imaging apparatus A solid-state imaging apparatus includes a pixel array comprising a plurality of light receiving elements disposed in a charge transfer direction, the plurality of light receiving elements converting a light signal into an electric signal, a first charge transfer un... | 10/05/2010 |
| 7719037 | Image sensor having reset transistor An image sensor includes a reset transistor, reset gate electrodes and a potential shift circuit. The reset transistor includes a reset gate and a reset drain, and resets charges detected by a charge detection device. The reset gate electrodes control a potential of... | 05/18/2010 |
| 7671386 | Solid-state imaging device, signal charge detection device, and camera The solid-state imaging device of the present invention includes: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light; an amplifier which is operable to convert the signa... | 03/02/2010 |
| 7646042 | Charge coupled device and solid-state imaging apparatus When capacity coupling between an output gate electrode (OG) and a last-stage transfer electrode is large at an output end of a CCD shift register, an electric potential of the OG is varied according to transfer clocks with the result that noise is liable to generat... | 01/12/2010 |
| 7550793 | Image pickup device and camera with expanded dynamic range The image pickup device of the invention has a path deeper in a semiconductor substrate, than a region wherein a channel is formed, upon turning on a first MOS transistor, under a gate thereof. The path is arranged by forming a P-type layer for forming a potential b... | 06/23/2009 |
| 7541628 | Image sensors including active pixel sensor arrays In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active... | 06/02/2009 |
| 7488998 | Solid-state imaging apparatus A solid-state imaging apparatus includes a plurality of photoelectric conversion devices, a charge transfer device for transferring a signal charge converted by the photoelectric conversion devices, a signal charge detection portion for converting a signal charge tr... | 02/10/2009 |
| 7488999 | Solid-state imaging device A solid-state imaging device includes a transfer element line for transferring an electric charge that is photoelectrically converted in a photoelectric conversion element line formed of a plurality of photoelectric conversion elements, and a charge detector for det... | 02/10/2009 |
| 7429764 | Signal processing device and image pickup apparatus using the same A signal processing device is provided which is capable of suppressing a voltage change of a power supply when output signals from a plurality of signal sources are read, and capable of outputting a stable signal at a high sensitivity, and an image pickup apparatus ... | 09/30/2008 |
| 7414276 | Solid-state image pickup device and charge transfer device A solid-state image pickup device includes a semiconductor substrate, a photosensitive pixel which converts incident light on the semiconductor substrate into a signal charge, and a charge detection section which converts the converted signal charge into an output s... | 08/19/2008 |
| 7414233 | Pixel circuit with surface doped region between multiple transfer transistors and image sensor including the same A pixel circuit of an image sensor includes a photo-converting unit such as a photo-diode for generating charge from incident light. The pixel circuit also includes a charge storing capacitor for storing the charge generated by the photo-converting unit. The pixel c... | 08/19/2008 |
| 7402850 | Back-side trapped non-volatile memory device Non-volatile memory devices and arrays are described that utilize back-side trapped floating node memory cells with band-gap engineered gate stacks with asymmetric tunnel barriers. Embodiments of the present invention allow for direct tunneling programming and effic... | 07/22/2008 |
| 7394128 | Semiconductor memory device with channel regions along sidewalls of fins A semiconductor memory (26) having a plurality of memory cells (25), the semiconductor memory (26) having a substrate (1), at least one wordline (2) and first (3) and second lines (4). Each memory cell (25) of ... | 07/01/2008 |
| 7391066 | Imager floating diffusion region and process for forming same The present invention provides an imager device with a floating diffusion region resistant to charge leakage. The floating diffusion region is formed having a first doped region and a second doped region which has a higher concentration of dopants than the first dop... | 06/24/2008 |
| 7378694 | CMOS image sensor A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrica... | 05/27/2008 |
| 7372496 | Solid-state image capturing device and imaging apparatus using the same An n-type semiconductor substrate 11 has a p-type well 12 in which are formed a charge transfer channel 13, a flowing diffusion region 14 made of an n-type impurity region, an n-type buried region 16 and a reset drain region 15 | 05/13/2008 |
| 7368668 | Ground shields for semiconductors A semiconductor device, such as a RF LDMOS, having a ground shield that has a pair of stacked metal layers. The first metal layer extends along the length of the semiconductor device and is formed on the upper surface of the semiconductor device body. The first laye... | 05/06/2008 |
| 7365409 | Two-transistor pixel with buried reset channel and method of formation A two-transistor pixel of an imager has a reset region formed adjacent a charge collection region of a photodiode and in electrical communication with a gate of a source follower transistor. The reset region is connected to one terminal of a capacitor which integrat... | 04/29/2008 |
| 7362364 | Solid-state image pickup device with photoelectric charge transferrer to a floating diffusion region A solid-state image pickup device including a charge transferrer to transfer a signal charge obtained through photoelectric conversion; a floating diffusion region; a reset means for resetting the potential of the floating diffusion region; and a current source for ... | 04/22/2008 |
| 7338862 | Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure Methods of fabricating a single transistor floating body dynamic random access memory (DRAM) cell include forming a barrier layer on a semiconductor substrate. A body layer is formed on the barrier layer. An isolation layer is formed defining a floating body region ... | 03/04/2008 |
| 7332814 | Bondwire utilized for coulomb counting and safety circuits A sense resistor and integrated circuit package combination is disclosed. A package lead frame is provided having a plurality of landing zones associated therewith and a die mounting area for mounting of a die thereon. The die has a plurality of bond pads associated... | 02/19/2008 |
| 7329968 | Charge-recycling voltage domains for energy-efficient low-voltage operation of digital CMOS circuits An integrated circuit with multiple supply voltage domains includes a first domain and a second domain of electrical components. The first domain receives current from a first voltage rail and discharges electrical current to a second voltage rail. A second domain o... | 02/12/2008 |
| 7323270 | Modular fuel-cell stack assembly A modular multi-stack fuel-cell assembly in which the fuel-cell stacks are situated within a containment structure and in which a gas distributor is provided in the structure and distributes received fuel and oxidant gases to the stacks and receives exhausted fuel a... | 01/29/2008 |
| 7323731 | Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite ... | 01/29/2008 |
| 7321110 | Solid state image pickup device and camera An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being com... | 01/22/2008 |
| 7319736 | Real-time digital x-ray imaging apparatus An x-ray diagnostic apparatus and methods performs Real-Time Digital Radiography with particular application in dental x-ray imaging modalities, such as Orthopantomography, Scannography, Linear Tomography and Cephalography, by using a versatile and modular electroni... | 01/15/2008 |
| 7315330 | Solid-state image pickup element including a thinning method to discharge unnecessary image data In a case where a thinning operation is implemented at the point when signal charges are read out from each of pixels to thin out pixel information by lines (row), the thinning may be performed only in the vertical direction, but not in the horizontal direction. In ... | 01/01/2008 |
| 7284598 | Support for a tube bundle A support for a bundle of parallel tubes, comprising at least two spaced apart transverse support plates, wherein each plate is provided with a plurality of openings of substantially rhombical or substantially frustro-rhombical shape, each of which openings having a... | 10/23/2007 |
| 7274052 | CCD charge-splitter adjustment by static charge gradient A charge splitter for separating an incoming charge packet into two outgoing packets while the charge is in a static state, i.e., not while it is flowing down a channel or over a barrier. A splitting gate may have a biasing charge impressed upon it, such as via the ... | 09/25/2007 |
| 7262470 | Semiconductor device With a microwave FET, the internalized Schottky junction capacitance or pn junction capacitance is small and these junctions are weak against static electricity. However, with a microwave device, a protecting diode could not be connected since the increase of parasi... | 08/28/2007 |
| 7262445 | Charge transfer device and solid-state image pickup device In a charge transfer device which has many two-layered transfer electrodes, 8L disposed along a charge transfer direction X above a transfer channel is driven with two-phase driving pulses supplied to the transfer electrodes of the second layer, the transfer ... | 08/28/2007 |
| 7262458 | Semiconductor memory device and portable electronic apparatus A semiconductor memory device includes: a gate electrode formed on a semiconductor layer via a gate insulating film; a channel region disposed under the gate electrode; diffusion regions disposed on both sides of the channel region and having a conductive type oppos... | 08/28/2007 |
| 7259394 | Solid-state imaging device A vertical transfer charge-coupled device for vertically transferring signal charges, a horizontal transfer charge-coupled device for receiving and horizontally transferring the transferred signal charges, an unwanted electron eliminator, and a potential barrier bet... | 08/21/2007 |
| RE39768 | VCC pump for CMOS imagers A CMOS imaging device which includes a charge pump connected to one or more of a reset gate, transfer gate and row select gate of sensor cells and provides gate control signals which give the imaging device an increased dynamic range charge capacity while minimizing... | 08/14/2007 |
| 7244971 | Solid state image pickup device A solid state image pickup device comprising: a semiconductor substrate having a surface layer; charge storage regions disposed in the surface layer; vertical channels disposed in the surface layer adjacent to respective columns of the charge storage regions; vertic... | 07/17/2007 |