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| Number | Title | Issue Date |
| 7851826 | Imager system comprising an integrated optical filter arranged between an imager and a transparent plate A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing the a plate of a transparent material onto the front fa... | 12/14/2010 |
| 7786516 | Discrete trap non-volatile multi-functional memory device A multiple layer tunnel insulator is fabricated between a substrate and a discrete trap layer. The properties of the multiple layers determines the volatility of the memory device. The composition of each layer and/or the quantity of layers is adjusted to fabricate ... | 08/31/2010 |
| 7423305 | Solid-state image sensing device having high sensitivity and camera system using the same A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor ... | 09/09/2008 |
| 7417272 | Image sensor with improved dynamic range and method of formation Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the chann... | 08/26/2008 |
| 7414276 | Solid-state image pickup device and charge transfer device A solid-state image pickup device includes a semiconductor substrate, a photosensitive pixel which converts incident light on the semiconductor substrate into a signal charge, and a charge detection section which converts the converted signal charge into an output s... | 08/19/2008 |
| 7402849 | Parallel, individually addressable probes for nanolithography A microfabricated probe array for nanolithography and process for designing and fabricating the probe array. The probe array consists of individual probes that can be moved independently using thermal bimetallic actuation or electrostatic actuation methods. The prob... | 07/22/2008 |
| 7382009 | Solid state image pickup device including an amplifying MOS transistor having particular conductivity type semiconductor layers, and camera using the same device To provide an amplification type solid state image pickup device enabling lower noise, higher gain, and higher sensitivity than any conventional amplification type solid state image pickup device. A solid state image pickup device according to the present invention ... | 06/03/2008 |
| 7352020 | Solid-state image pickup device, and manufacturing method thereof The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for the same. A MOS type imaging apparatus 1 includes an imaging ... | 04/01/2008 |
| 7352028 | Solid-state imaging devices A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a floating diffusion that retains the light-generated charge generated from t... | 04/01/2008 |
| 7329943 | Microelectronic devices and methods for forming interconnects in microelectronic devices Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backs... | 02/12/2008 |
| 7327000 | Patterned thin film graphite devices and method for making same In a method of making graphite devices, a preselected crystal face of a crystal is annealed to create a thin-film graphitic layer disposed against selected face. A preselected pattern is generated on the thin-film graphitic layer. A functional structure includes a c... | 02/05/2008 |
| 7300857 | Through-wafer interconnects for photoimager and memory wafers A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Fu... | 11/27/2007 |
| 7294897 | Packaged microelectronic imagers and methods of packaging microelectronic imagers Microelectronic imagers, methods for packaging microelectronic imagers, and methods for forming electrically conductive through-wafer interconnects in microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging die can include a microe... | 11/13/2007 |
| 7276749 | Image sensor with microcrystalline germanium photodiode layer A microcrystalline germanium image sensor array. The array includes a number of pixel circuits fabricated in or on a substrate. Each pixel circuit comprises a charge collecting electrode for collecting electrical charges and a readout means for reading out the charg... | 10/02/2007 |
| 7253458 | CMOS image sensor A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is d... | 08/07/2007 |
| 7238977 | Wide dynamic range sensor having a pinned diode with multiple pinned voltages A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunc... | 07/03/2007 |
| 7230288 | Solid-state image pickup device and fabrication method thereof A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical tran... | 06/12/2007 |
| 7218346 | Method for driving solid-state image pickup device A method to overcome a disadvantage that the signal charges decrease depending upon the storage time in a photo-electric conversion unit of a solid-state image pickup device. At the moment t2 when a prescribed exposure time (t1−t2)... | 05/15/2007 |
| 7199410 | Pixel structure with improved charge transfer An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers... | 04/03/2007 |
| 7189642 | Methods of fabricating interconnects including depositing a first material in the interconnect with a thickness of angstroms and a low temperature for semiconductor components In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewall... | 03/13/2007 |
| 7141841 | Image sensor having a transistor for allowing increased dynamic range Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the chann... | 11/28/2006 |
| 7136159 | Excimer laser inspection system A system and method for inspecting a specimen, such as a semiconductor wafer, including illuminating at least a portion of the specimen using an excimer source using at least one relatively intense wavelength from the source, detecting radiation received from the il... | 11/14/2006 |
| 7129531 | Programmable resistance memory element with titanium rich adhesion layer A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition. ... | 10/31/2006 |
| 7126029 | Method and apparatus for in-process handling of cumene hydroperoxide with improved safety The present invention provides a method and apparatus for in-process handling of concentrated cumene hydroperoxide (“CHP”) in a process for the production of phenol and acetone by the decomposition of CHP. The method of the present invention makes use of a tube ... | 10/24/2006 |
| 7091532 | Light shield process for solid-state image sensors An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive... | 08/15/2006 |
| 7075829 | Programmable memory address and decode circuits with low tunnel barrier interpoly insulators Structures and methods for programmable memory address and decode circuits with low tunnel barrier interpoly insulators are provided. The decoder for a memory device includes a number of address lines and a number of output lines wherein the address lines and the ou... | 07/11/2006 |
| 7074639 | Fabrication of a high-precision blooming control structure for an image sensor Provided is a method of fabrication of a blooming control structure for an imager. The structure is produced in a semiconductor substrate in which is configured an electrical charge collection region. The electrical charge collection region is configured to accumula... | 07/11/2006 |
| 7061030 | Semiconductor device, a manufacturing method thereof, and a camera A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating f... | 06/13/2006 |
| 7057220 | Ultrashallow photodiode using indium The invention provides an imager having a p-n-p photodiode with an ultrashallow junction depth. A p+ junction layer of the photodiode is doped with indium to decrease transient enhanced diffusion effects, minimize fixed pattern noise and fill factor loss. ... | 06/06/2006 |
| 7026690 | Memory devices and electronic systems comprising integrated bipolar and FET devices The invention includes BIFETRAM devices. Such devices comprise a bipolar transistor in combination with a field effect transistor (FET) in a three-dimensional stacked configuration. The memory devices can be incorporated within semiconductor-on-insulator (SOI) const... | 04/11/2006 |
| 6998657 | Single poly CMOS imager More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge... | 02/14/2006 |
| 6982443 | Hollow dielectric for image sensor A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least on... | 01/03/2006 |
| 6974973 | Apparatus for determining temperature of an active pixel imager and correcting temperature induced variations in an imager An imager temperature sensor and a current correction apparatus are provided which use dark pixel measurements from an imager chip during operation together with a fabrication process constant as well as a chip dependent constant to calculate chip temperature. The c... | 12/13/2005 |
| 6956253 | Color filter with resist material in scribe lines A color filter includes a substrate having a plurality of scribe lines arranged to form at least one filter region surrounded by the scribe lines. The scribe lines are at least partially filled with a resist material. At least one color resist layer is formed above ... | 10/18/2005 |
| 6946717 | High voltage semiconductor device A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211) disposed on the substrate and electrically coup... | 09/20/2005 |
| 6900484 | Angled pinned photodiode for high quantum efficiency A pinned photodiode with a surface layer of a first conductivity type laterally displaced from an electrically active area of a gate structure and a charge collection region of a second conductivity type formed by an angled implant is disclosed. The angle of the cha... | 05/31/2005 |
| 6885047 | Solid-state image sensing device having pixels with barrier layer underneath transistor regions and camera using said device A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor ... | 04/26/2005 |
| 6864555 | Photo detector methods to reduce the disabling effects of displacement current in opto-couplers This invention discloses the several means by which transient noise due to capacitance related displacement current can be excluded from the optical signal coming from a silicon detector used in opto-couplers. The exclusion of such noise permits a high degree of det... | 03/08/2005 |
| 6858457 | Method of manufacturing acceleration sensor Provided is a method of manufacturing an acceleration sensor capable of preventing bonding of a movable electrode and a fixed electrode. A stain film 8 for reducing bonding adsorption force is formed on side surfaces of a movable electrode 1, fixed ele... | 02/22/2005 |
| 6855968 | High-speed photon detector and no cost method of forming the detector A photon detector capable of detecting gigahertz frequency optical signals utilizes a layer of photonic material that is formed below of the coil of an inductor. When a pulsed light source is applied to the layer of photonic material, the photonic material generates... | 02/15/2005 |
