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| Number | Title | Issue Date |
| 7956348 | Complementary logic circuit A quantum device comprises first conductive members and second conductive members confining carriers in the z direction and having two dimensional electron gas on the xy plane. Third conductive members generating an electric field having an effect on the first condu... | 06/07/2011 |
| 7399988 | Photodetecting device and method of manufacturing the same A photodetecting device which is capable of performing photodetection with a high sensitivity in a wide temperature range. A quantum dot structure including an embedding layer and quantum dots embedded by the embedding layer is formed. A quantum well structure inclu... | 07/15/2008 |
| 7351998 | Proton or ion movement assisted molecular devices There are disclosed molecular scale devices for performing logic functions. Devices comprise at least one input molecular unit, at least one output molecular unit, at least one molecular unit for performing logic or memory functions, and a means for effecting charge... | 04/01/2008 |
| 7335395 | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles Methods of Using Preformed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to cre... | 02/26/2008 |
| 7262446 | Semiconductor device and process for production thereof A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof. The semiconductor device includes a channel layer (which constitutes a current channel), a first semi... | 08/28/2007 |
| 7217989 | Composition for selectively polishing silicon nitride layer and polishing method employing it To provide a polishing composition whereby the stock removal rate of a silicon nitride layer is higher than the stock removal rate of a silicon oxide layer, there is substantially no adverse effect against polishing planarization, and a sufficient stock removal rate... | 05/15/2007 |
| 7199391 | Device with quantum dot layer spaced from delta doped layer A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of th... | 04/03/2007 |
| 7200378 | Rocking potential-well switch and mixer Channelizing an applied current and applying a voltage to the channelized current enables switching of the applied current. According to the present invention, an applied current enters through a signal input carrier (12) and is channelized by a plurality of ... | 04/03/2007 |
| 7175961 | Photopatternable molecular circuitry Bistable molecules are provided with at least one photosensitive functional group. As thus constituted, the bistable molecules are photopatternable, thereby allowing fabrication of micrometer-scale and nanometer-scale circuits in discrete areas without relying on a ... | 02/13/2007 |
| 7176505 | Electromechanical three-trace junction devices Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the f... | 02/13/2007 |
| 7173275 | Thin-film transistors based on tunneling structures and applications A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at leas... | 02/06/2007 |
| 7155684 | Integrated circuit device and method for forming the same In an integrated circuit device, element power supply lines connected to a circuit containing a plurality of cells, element ground lines connected thereto, a trunk power supply line connected to each of the element power supply lines, and a trunk ground line connect... | 12/26/2006 |
| 7144683 | Photopatternable molecular circuitry Bistable molecules are provided with at least one photosensitive functional group. As thus constituted, the bistable molecules are photopatternable, thereby allowing fabrication of micrometer-scale and nanometer-scale circuits in discrete areas without relying on a ... | 12/05/2006 |
| 7132677 | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting ... | 11/07/2006 |
| 7120047 | Device selection circuitry constructed with nanotube technology A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nano... | 10/10/2006 |
| 7107252 | Pattern recognition utilizing a nanotechnology-based neural network A pattern recognition system, comprising a neural network formed utilizing nanotechnology and a pattern input unit, which communicates with the neural network, wherein the neural network processes data input via the pattern input unit in order to recognize data patt... | 09/12/2006 |
| 7098471 | Semiconductor quantum well devices and methods of making the same Semiconductor quantum well devices and methods of making the same are described. In one aspect, a device includes a quantum well structure that includes semiconductor layers defining interleaved heavy-hole and light-hole valance band quantum wells. Each of the quant... | 08/29/2006 |
| 7077982 | Molecular electric wire, molecular electric wire circuit using the same and process for producing the molecular electric wire circuit A molecular electric wire that is formed of an environmentally benign ecological material and enables a microscopic wiring, a molecular electric wire circuit using the molecular electric wire, and the like are provided. The molecular electric wire comprises a rod-sh... | 07/18/2006 |
| 7064000 | Methods of chemically assembled electronic nanotechnology circuit fabrication Chemically assembled electronic nanotechnology (CAEN) provides an alternative to using Complementary Metal Oxide Semiconductor (CMOS) for constructing circuits with feature sizes in the tens of nanometers. A molecular latch and a method using the latch that enables ... | 06/20/2006 |
| 7038233 | Semiconductor optical devices and optical modules An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A ... | 05/02/2006 |
| 7039619 | Utilized nanotechnology apparatus using a neutral network, a solution and a connection gap An apparatus for maintaining components in neural network formed utilizing nanotechnology is described herein. A connection gap can be formed between two terminals. A solution comprising a melting point at approximately room temperature can be provided, wherein the ... | 05/02/2006 |
| 7028017 | Temporal summation device utilizing nanotechnology A temporal summation device can be composed of one or more nanoconnections having an input and an output thereof, wherein an input signal provided to the input causes one or more of the nanoconnection to experience an increase in connection strength thereof over tim... | 04/11/2006 |
| 7026642 | Vertical tunneling transistor The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may ... | 04/11/2006 |
| 7015062 | Molecular ruler for scaling down nanostructures The present invention is a method and apparatus relating to manufacturing nanostructure patterns and components using molecular science. The method includes overlaying a multilayer organic molecule resist on at least a portion of a parent structure selectively depos... | 03/21/2006 |
| 6998306 | Semiconductor memory device having a multiple tunnel junction pattern and method of fabricating the same The present invention discloses a semiconductor memory device having a multiple tunnel junction pattern and a method of forming the same. The semiconductor memory device includes a unit cell composed of planar transistor and vertical transistors. The planar transist... | 02/14/2006 |
| 6995649 | Variable resistor apparatus formed utilizing nanotechnology A variable resistor apparatus includes a plurality of nanoparticles disposed between two terminals, wherein the plurality of nanoparticles provides an electrical resistance. An electric field applied to the plurality of nanoparticles across the two terminals results... | 02/07/2006 |
| 6979590 | Methods of making electromechanical three-trace junction devices Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an up... | 12/27/2005 |
| 6927450 | Non-volatile semiconductor storage device having a salicide structure A method of manufacturing a semiconductor device include a step of forming an insulating layer, which is obtained by building up a first oxide film, a nitride film and a second oxide film on a substrate in the order mentioned, and a Salicide step of forming a Salici... | 08/09/2005 |
| 6919592 | Electromechanical memory array using nanotube ribbons and method for making same Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports... | 07/19/2005 |
| 6911682 | Electromechanical three-trace junction devices Three trace electromechanical circuits and methods of using same are described. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. The nanotube ribbon is movable to... | 06/28/2005 |
| 6897468 | Resonant controlled qubit system Methods for coupling a superconducting qubit to a resonant control circuit. An interaction term between the qubit and the circuit initially has a diagonal component. A recoupling operation is applied to the qubit. The circuit is tuned so that a frequency of the qubi... | 05/24/2005 |
| 6891189 | Nitride semiconductor laser device and optical pickup apparatus therewith A nitride semiconductor laser device includes a nitride semiconductor substrate, and a layered portion corresponding to a nitride semiconductor film grown on the nitride semiconductor substrate, the layered portion including an n-type layer and a p-type layer and a ... | 05/10/2005 |
| 6885023 | Optical device and a method of making an optical device An optical device such as a radiation detector or an optically activated memory includes a barrier region located between two active regions. One or more quantum dots are provided such that a change in the charging state of the quantum dot or dots affects the flow o... | 04/26/2005 |
| 6870178 | Semiconductor laser with reduced temperature sensitivity A quantum dot (QD) laser having greatly reduced temperature sensitivity employs resonant tunnel-injection of carriers into the QDs from a pair of quantum wells (QWs). The carriers are injected through barrier layers. Because the tunnel-injection process is essential... | 03/22/2005 |
| 6855959 | Nitride based semiconductor photo-luminescent device A nitride based semiconductor photo-luminescent device has an active layer having a quantum well structure. The active layer has both a high dislocation density region and a low dislocation density region that is lower in dislocation density than the high dislocatio... | 02/15/2005 |
| 6853018 | Semiconductor device having a channel layer, first semiconductor layer, second semiconductor layer, and a conductive impurity region A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof. The semiconductor device includes a channel layer (which constitutes a current channel), a first semi... | 02/08/2005 |
| 6812483 | Optical semiconductor element utilizing optical transition between ZnO heterostructure sub-bands Disclosed is an optical semiconductor device which has a quantum well structure comprising a quantum well made of a zinc oxide or a zinc oxide mixed crystal thin film, and utilizes optical transition between subbands in the quantum well structure. An element of this... | 11/02/2004 |
| 6803598 | Si-based resonant interband tunneling diodes and method of making interband tunneling diodes Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not ... | 10/12/2004 |
| 6774389 | Optical semiconductor device A semiconductor optical device with improved optical gain and enhanced switching characteristics. The semiconductor optical device includes positive and negative electrodes for providing holes and electrons, respectively. The semiconductor optical device also includ... | 08/10/2004 |
| 6774391 | Magnetic logic element A logic device formed at least one chain of dots of magnetic material. Each dot has a width of 200 nm or less and is spaced at a distance that is sufficiently small to ensure magnetic interaction of adjacent dots. ... | 08/10/2004 |
