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| Number | Title | Issue Date |
| 8143615 | Electron beam emitting device with a superlattice structure A superlattice structure comprises a plurality of well layers made of first semiconductor and a plurality of barrier layers made of second semiconductor that has a band gap wider than that of the first semiconductor, wherein both layers are deposited alternately, an... | 03/27/2012 |
| 8134141 | Detector with tunable spectral response A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying dete... | 03/13/2012 |
| 8120014 | Nanowire based plasmonics Nanoscaled, tunable detector devices for ultrasensitive detection of terahertz (THz) radiation based on the fabrication of one-dimensional (1D) plasma devices having clouds of strongly correlated and spatially confined electronic charge carriers are disclosed. These... | 02/21/2012 |
| 8101940 | Photodetector and method for manufacturing photodetector A photodetector 1 according to an embodiment of the present invention includes: an n-type InAs substrate 12; an n-type InAs buffer layer 14 formed on the n-type InAs substrate 12; an n-type InAs light absorbing layer 16 formed on t... | 01/24/2012 |
| 8093582 | Dual band photodetector A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet/infrared dual-band detector is discl... | 01/10/2012 |
| 8080821 | Thyristor radiation detector array and applications thereof An array of thyristor detector devices is provided having an epitaxial growth structure with complementary types of modulation doped quantum well interfaces located between a P+ layer and an N+ layer. The thyristor detector devices operate over successive cycles tha... | 12/20/2011 |
| 8058642 | Light-receiving device A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately be... | 11/15/2011 |
| 8022391 | Photodetectors and photovoltaics based on semiconductor nanocrystals A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge bet... | 09/20/2011 |
| 8022390 | Lateral conduction infrared photodetector A photodetector for detecting infrared light in a wavelength range of 3-25 μm is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and InxGa1-... | 09/20/2011 |
| 7977666 | Quantum dot infrared photodetector apparatus The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device includes a substrate, a first contact layer formed on the substrate, an active layer forme... | 07/12/2011 |
| 7968869 | Optoelectronic architecture having compound conducting substrate Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made o... | 06/28/2011 |
| 7910916 | Multi-junction type solar cell device In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semicond... | 03/22/2011 |
| 7902546 | Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with sil... | 03/08/2011 |
| 7893425 | Quantum well structure A quantum well structure according to the invention includes a quantum well layer (107) arranged between two barrier layers (109, 112). It is distinguished in that at least one of the barrier layers (109) includes nanostructures (110) whi... | 02/22/2011 |
| 7851782 | Photodetector including multiple waveguides An example photodetector includes a waveguide structure having an active waveguide comprising an absorber for converting photons conveying an optical signal into charge carriers conveying a corresponding electrical signal; a carrier collection layer for transporting... | 12/14/2010 |
| 7838869 | Dual band photodetector A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet/infrared dual-band detector is discl... | 11/23/2010 |
| 7838868 | Optoelectronic architecture having compound conducting substrate Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made o... | 11/23/2010 |
| 7777217 | Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface ... | 08/17/2010 |
| 7745816 | Single-photon detector with a quantum dot and a nano-injector A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/AlInGaAs/AlGaAsSb layers, capable... | 06/29/2010 |
| 7709825 | Electrically programmable hyper-spectral focal-plane-array A voltage supply is connected to provide a variable bias voltage to a plurality of optical quantum tunneling photodetectors to thereby vary the spectral response of the photodetectors and thus detect radiation. ... | 05/04/2010 |
| 7683363 | Composition for photon-energy up-conversion The present invention relates to a composition for photon energy up-conversion, a system comprising said composition and to uses of said composition and said system. ... | 03/23/2010 |
| 7619240 | Semiconductor photodetector, device for multispectrum detection of electromagnetic radiation using such a photodetector and method for using such a device This semiconductor photodetector consists of a diode with at least two heterojunctions comprising two external layers, a first layer with a given kind or type of doping and a second layer with a kind or type of doping opposite to that of the first layer, the bandgap... | 11/17/2009 |
| 7605391 | Optically coupled resonator An optically coupled resonator includes a resonator body having at least one resonator sidewall and a laterally offset photodiode formed in a semiconductor substrate adjacent to the resonator body. The resonator is driven by an electric field generated between the l... | 10/20/2009 |
| 7601981 | Electrically programmable hyper-spectral focal-plane-array A voltage supply is connected to provide a variable bias voltage to a plurality of optical quantum tunneling photodetectors to thereby vary the spectral response of the photodetectors and thus detect radiation. ... | 10/13/2009 |
| 7573060 | Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor ma... | 08/11/2009 |
| 7557368 | Semiconductor photodetector A semiconductor photodetector (1) for detecting short duration laser light pulses of predetermined wavelength in a light signal (2) comprises a micro-resonator (3) of vertical Fabry-Perot construction having a Bragg mirror pair, namely, a front ... | 07/07/2009 |
| 7538340 | Low side emitting light source and method of making the same A light source having a die, a substrate, and a housing is disclosed. The die has a semiconducting light emitting device thereon, the die having a top surface and a bottom surface, light being emitted through the top surface. The die is characterized by a maximum di... | 05/26/2009 |
| 7462859 | Quantum well design for a coherent, single-photon detector with spin resonant transistor A spin coherent, single photon detector has a body of semiconductor material with a quantum well region formed in barrier material in the body. The body has a first electrode forming an isolation electrode for defining, when negatively energized, an extent of the qu... | 12/09/2008 |
| 7446334 | Electronic device comprising active optical devices with an energy band engineered superlattice An electronic device may include first and second integrated circuits including respective first and second active optical devices establishing an optical communications link therebetween. The first active optical device may include a superlattice including a plural... | 11/04/2008 |
| 7442953 | Wavelength selective photonics device A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons... | 10/28/2008 |
| 7440157 | Optically addressed spatial light modulator and method An optical device has an electrically insulating first barrier layer disposed over a first electrode layer, a photoconductive layer disposed over the first barrier layer, and a carrier confining layer disposed over the photoconducting layer. The carrier confining la... | 10/21/2008 |
| 7432537 | Avalanche photodiode structure An avalanche photodiode (APD) includes an anode layer, a cathode layer, an absorption layer between the anode layer and the cathode layer, a first multiplying stage between the absorption layer and the cathode layer, a second multiplying stage between the first mult... | 10/07/2008 |
| 7432524 | Integrated circuit comprising an active optical device having an energy band engineered superlattice An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base... | 10/07/2008 |
| 7423284 | Light emitting device, method for making the same, and nitride semiconductor substrate A light-emitting device includes a GaN substrate; a n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate compared to the n-type A... | 09/09/2008 |
| 7415185 | Buried-waveguide-type light receiving element and manufacturing method thereof A buried-waveguide light detecting element includes an n-type cladding layer on a Fe-InP substrate, a waveguide on a portion of the n-type cladding layer, and in which an n-type light guide layer, an i-light guide layer having a refractive index equal to or higher t... | 08/19/2008 |
| 7399988 | Photodetecting device and method of manufacturing the same A photodetecting device which is capable of performing photodetection with a high sensitivity in a wide temperature range. A quantum dot structure including an embedding layer and quantum dots embedded by the embedding layer is formed. A quantum well structure inclu... | 07/15/2008 |
| 7397067 | Microdisplay packaging system Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be substantially similar to the... | 07/08/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7378151 | Semiconductor nanoparticle, and a process of manufacturing the same The invention provides a semiconductor nanoparticle comprising a semiconductor nanoparticle core on the surface of which electron-releasing groups are arranged, the semiconductor nanoparticle having a fluorescent property and water-solubility. The invention also pro... | 05/27/2008 |
| 7378680 | Migration enhanced epitaxy fabrication of quantum wells Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum we... | 05/27/2008 |
