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| Number | Title | Issue Date |
| 5336901 | Composite semiconductor structure for reducing scattering of carriers by optical phonons and a semiconductor device that uses such a composite semiconductor structure A semiconductor structure comprises a first material layer of a homopolar material having a conduction band that includes an L valley and a .GAMMA. valley such that the L valley has an energy level lower than the .GAMMA. valley when in a bulk crystal stat... | 08/09/1994 |
| 5329137 | Integrated total internal reflection optical switch utilizing charge storage in a quantum well An optical switch comprises a heterojunction transistor having a source electrode, a gate, a mesa, and three self-aligned waveguides, the mesa being ion implanted and having a single quantum well under the gate electrode, the single quantum well being com... | 07/12/1994 |
| 5329150 | Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers A semiconductor light wave detector which has a first layer of a highly doped n-type semiconducting substrate, a second layer of a highly doped n-type semiconducting material, a third layer of a distinct intrinsic semiconducting material and a fourth laye... | 07/12/1994 |
| 5323020 | High performance MESFET with multiple quantum wells A superheterojunction Field Effect Transistor (FET) with a multi-region channel on a Silicon (Si) substrate. The FET is a Metal Semiconductor FET (MESFET) or, alternatively, a Junction FET (JFET). The multi-region channel has: A first region of Si extendi... | 06/21/1994 |
| 5311045 | Field effect devices with ultra-short gates The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure is grown vertically on a su... | 05/10/1994 |
| 5302840 | HEMT type semiconductor device having two semiconductor well layers A HEMT type semiconductor device includes a semiconductor substrate, a buffer semiconductor layer formed on the substrate, a first semiconductor well layer formed on the buffer layer and serving as a first conductivity type channel layer, a second semicon... | 04/12/1994 |
| 5293138 | Integrated circuit element, methods of fabrication and utilization A circuit element comprises an acoustic charge transport device comprising an input, a barrier element and an output. A transistor assembly comprises a source, a gate and a drain. One of the input, output and barrier elements is operably connected with on... | 03/08/1994 |
| 5291034 | Non-linear quantum dot optical device A non-linear optical device utilizes laterally asymmetrical quantum dot structures (D1-D5) that are tunable in terms of their lateral asymmetry by bias potentials (V1, V2) applied to laterally extending electrode structures (13, 14).... | 03/01/1994 |
| 5285068 | Photo-detector and photo-detection method using the same A photo-detector for detecting a light having a predetermined photon energy, comprises: a semiconductor member having a source region, a gate region and a drain region; a first path for propagating an electron wave from the source region to the drain regi... | 02/08/1994 |
| 5283445 | Quantum semiconductor device employing quantum boxes for enabling compact size and high-speed operation A quantum semiconductor device has a semiconductor substrate, a plurality of quantum boxes formed adjacent to one another in the semiconductor substrate, and a quantum level control unit for changing the effective size of at least one of the quantum boxes... | 02/01/1994 |
| 5274246 | Optical modulation and switching with enhanced third order nonlinearity multiple quantum well effects A multiple quantum well arrangement which achieves significantly improved third order optical nonlinearity in a semiconductor device by way of spatially periodic electrodes applied to the semiconductor device. The spatial period of the applied electrodes ... | 12/28/1993 |
| 5258632 | Velocity modulation transistor A velocity modulation transistor has a first barrier layer, first channel layer, second barrier layer, second channel layer, third barrier layer, input/output electrode that and control electrode are laminated on a semi-insulative substrate in this order,... | 11/02/1993 |
| 5227644 | Heterojunction field effect transistor with improve carrier density and mobility A field effect transistor comprising first and second electrodes, semiconductor layers connected to these electrodes to form a carrier channel between them and a control electrode is provided. Said semiconductor layers consisting essentially of: (a) a fir... | 07/13/1993 |
| 5221849 | Semiconductor device with active quantum well gate A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by independent gate electrodes (13, 15) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is couple... | 06/22/1993 |
| 5219772 | Method for making field effect devices with ultra-short gates The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure is grown vertically on a su... | 06/15/1993 |
| 5216262 | Quantum well structures useful for semiconductor devices A quantum well structure useful for semiconducting devices comprises two barrier regions and a thin epitaxially grown monocrystalline semiconductor material quantum well sandwiched between said barrier regions. Each barrier region consists essentially of ... | 06/01/1993 |
| 5216260 | Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers An optically bistable semiconductor device which has a doped or undoped gallium arsenide substrate and a series of alternating n-type and p-type Dirac-delta doped monoatomic layers formed on the substrate. Each Dirac-delta doped monoatomic layer is separa... | 06/01/1993 |
| 5212404 | Semiconductor device having a vertical channel of carriers A semiconductor device comprises a substrate having a stepped upper major surface, an emitter layer of a semiconductor material provided on the stepped upper major surface of the substrate and having a corresponding stepped upper major surface, a base lay... | 05/18/1993 |
| 5198879 | Heterojunction semiconductor device A heterojunction semiconductor device utilizing a quantum-mechanical effect comprises a first compound semiconductor (e.g., AlGaAs) layer and a second compound semiconductor (e.g., GaAs) layer having an electron affinity different from that of the first s... | 03/30/1993 |
| 5196912 | Thin film transistor having memory function and method for using thin film transistor as memory element A memory element is formed of a thin film transistor. The thin film transistor has a semiconductor layer, a source electrode electrically connected to the semiconductor layer, a drain electrode electrically connected to the semiconductor layer and formed ... | 03/23/1993 |
| 5153682 | HEMT device with doped active layer A high-mobility semiconductor device having GaAs/AlGaAs hetero junction of the present invention comprises a GaAs active layer and a GaAs contact layer, with a high-carrier concentration AlGaAs barrier layer interposed therebetween, so that the effective ... | 10/06/1992 |
| 5130766 | Quantum interference type semiconductor device A quantum interference type semiconductor device is composed of at least one bifurcated branch conductive channel with a heterojunction in a semiconductor with a band discontinuity that produced a potential well between two semiconductor regions into whic... | 07/14/1992 |
| 5107314 | Gallium antimonide field-effect transistor A complementary MISFET uses gallium antimonide as the active material to utilize the high mobilities of both holes and electrons in such material. To avoid interfacial states at the gate interface, the gate insulator is an epitaxial composite layer formed... | 04/21/1992 |
| 5101242 | Thin film transistor A thin film transistor is described incorporating a gate electrode, a layer of insulating material, a layer of buffer material, a layer of semiconductor material, a source electrode and drain electrode. The invention reduces the problem of variation in th... | 03/31/1992 |
| 5060234 | Injection laser with at least one pair of monoatomic layers of doping atoms A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is injection laser in which case the Dirac-delta doped ... | 10/22/1991 |
| 5055887 | FET with a super lattice channel An improved FET is disclosed. The transistor is characterized in that its channel is in the form of a superlattice. The superlattice structure provides a number of square well potential areas through which carriers can pass with little interaction with th... | 10/08/1991 |
| 5053843 | Thermally-stable structure for IMSM photodetectors on GaAs substrates An IMSM photodetector structure comprises a GaAs substrate, a buffer region grown on the substrate, an optically active absorbing layer of In0.42 Ga0.58 As grown on the absorbing layer. The buffer region includes in sequence a first ... | 10/01/1991 |
| 5049951 | Superlattice field effect transistor with monolayer confinement A heterojunction field effect transistor (HFET) having a source, drain, and channel, wherein the channel is a top layer of a superlattice buffer, eliminating the need for a thick buffer layer. The superlattice buffer comprises alternating barrier and quan... | 09/17/1991 |
| 5031007 | SLS complementary logic devices with increase carrier mobility In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among ... | 07/09/1991 |
| 5021839 | FET with a super lattice channel An improved FET is disclosed. The transistor is characterized in that its channel is constituted in the form of a super lattice. The super lattice structure provides a number of square well potential areas through which carriers can pass with little inter... | 06/04/1991 |
| 5006914 | Single crystal semiconductor substrate articles and semiconductor devices comprising same A textured substrate is disclosed which is amenable to deposition thereon of epitaxial single crystal films of materials such as diamond, cubic boron nitride, boron phosphide, beta-silicon carbide, and gallium nitride. The textured substrate comprises a b... | 04/09/1991 |
| 5003359 | Optoelectronic integrated circuit The present invention relates to an optoelectronic integrated circuit having a substantially planar surface and which includes at least one laser diode and at least one field effect transistor. The integrated circuit comprises a substrate of semi-insulati... | 03/26/1991 |
| 4999682 | Electronic and optoelectronic laser devices utilizing light hole properties Improved p-channel FETs and optoelectronic device make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs which have electrically induced and controllable one dimensional p-typ... | 03/12/1991 |
| 4978910 | Electrooptic apparatus for the measurement of ultrashort electrical signals An electrooptic measuring apparatus having both high voltage sensitivity and femtosecond time resolution includes coplanar transmission lines fabricated on a semi-insulating multiple quantum well structure. An electrical signal, such as from a high speed ... | 12/18/1990 |
| 4956680 | Thin film transistor A thin film transistor having a shading layer for reducing optical leakage current. The shading layer is made essentially of opaque organic material.... | 09/11/1990 |
| 4916510 | Thin film mesa transistor of field effect type with superlattice A thin film mesa type FET having a gate electrode formed on a substrate. An insulating thin film layer is formed on the gate electrode. A multilayer structure is formed on the insulating thin film layer by alternately laminating a number of non-monocrysta... | 04/10/1990 |
| 4914743 | Yoked orthogonally distributed equal reactance non-coplanar traveling wave amplifier A Field Effect Transistor (FET) device especially useful in common gate amplifiers of signals in the microwave to millimeter range. The device's input and output are impedence matched to preclude phase cancellation and form a traveling wave amplifier capa... | 04/03/1990 |
| 4912531 | Three-terminal quantum device A three-terminal quantum well device, which functions somewhat analogously to an MOS transistor. That is, the three terminals of the device can generally be considered as source, gate, and drain. An output contact is connected by tunneling to a number of ... | 03/27/1990 |
| 4908678 | FET with a super lattice channel An improved FET is disclosed. The transistor is characterized in that its channel is constituted in the form of a super lattice. The super lattice structure provides a number of square well potential areas through which carriers can pass with little inter... | 03/13/1990 |
| 4907042 | Device for the multiplication of charge carriers by an avalanche phenomenon and application of the said device to photosensors, photocathodes and infrared viewing devices A device for the multiplication of charge carriers of a given type by an avalanche phenomenon includes: a semiconductor material of homogeneous composition, placed in an electrical field. Perpendicular to the working field, plane and parallel layers which are ... | 03/06/1990 |
