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Pet Toilet-Like Water Disk and Food Storage
One pet-friendly inventor patented "a device for watering pets, e.g., a dog or cat." The device, he helpfully noted, "has the general shape of a toilet."
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| Number | Title | Issue Date |
| 4899201 | Electronic and optoelectric devices utilizing light hole properties Improved p-channel FETs and optoelectronic devices make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs which have electrically induced and controllable one dimensional p-ty... | 02/06/1990 |
| 4894691 | Compound semiconductor device with superlattice channel region A compound semiconductor device having a channel layer which is made of periodically laminated structure of thin-film layers of compound semiconductor substantially being different from each other. The difference of energy between the conduction band and ... | 01/16/1990 |
| 4882609 | Semiconductor devices with at least one monoatomic layer of doping atoms A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is a field effect transistor in which case the Dirac-de... | 11/21/1989 |
| 4872038 | Lateral surface superlattice having negative differential conductivity novel process for producing same A lateral surface superlattice device having electronically created quantum wells which exhibits negative differential conductivity at ambient temperature and process for producing same.... | 10/03/1989 |
| 4866488 | Ballistic transport filter and device An energy filter for carriers in semiconductor devices and devices with such filters are disclosed. The filter is a superlattice and the filtering action arises from the subbands and gaps in the conduction and valence bands of the superlattice. A heteroju... | 09/12/1989 |
| 4855797 | Modulation doped high electron mobility transistor with n-i-p-i structure A modulation-doped field effect transistor includes an undoped semiconductor layer and an arrangement for supplying charge carriers into a region of the semiconductor layer adjacent one side. An arrangement is provided for locally modulating hole and elec... | 08/08/1989 |
| 4835578 | Semiconductor device having a quantum wire and a method of producing the same A semiconductor device comprises a first superlattice layer consisting of a first semiconductor layer that contains impurities and a second semiconductor layer that contains impurities at a low concentration, said first superlattice layer being formed on ... | 05/30/1989 |
| 4799087 | Field effect transistor A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed be... | 01/17/1989 |
| 4797716 | Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well lay... | 01/10/1989 |
| 4796067 | Semiconductor device having a superlattice structure A semiconductor device having a plurality of laminated semiconductor layers in which a current flows in the direction of lamination. A superlattice layer is formed in at least one of the layers and the potential of the quantum well of the superlattice lay... | 01/03/1989 |
| 4796068 | Semiconductor device having ultrahigh-mobility A semiconductor device which utilizes the fact that the effective mass of charged particles becomes exceedingly large at certain points in the direction of a periodically repeating potential by virtue of a periodic structure in which semiconductor layers ... | 01/03/1989 |
| 4769683 | Superlattice gate field effect transistor A quasi 1-dimensional electron gas transistor has been provided having a source electrode and a drain electrode. A plurality of electrodes are positioned between the source and drain electrodes in a manner which are parallel to the electron flow between t... | 09/06/1988 |
| 4766472 | Monolithic semiconductor structure of a laser and a field effect transistor A monolithic semiconductor structure of a laser and a field effect transistor applicable to telecommunications comprises, on a semiinsulating substrate, a semiconductor layer of Ga1-x Alx As, a N-doped semiconductor layer of Ga1... | 08/23/1988 |
| 4697197 | Transistor having a superlattice A transistor has a superlattice in the channel region. The superlattice has alternate interleaved layers of undoped wide and narrow bandgap materials with the layers extending in a direction parallel to the channel region. Preferably a narrow band gap lay... | 09/29/1987 |
| 4689646 | Depletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the same The depletion mode two-dimensional electron gas field effect transistor comprises a substantially pure semiconductor layer, an impurity doped super lattice semiconductor layer formed on the pure semiconductor layer, the energy band gaps and the electron a... | 08/25/1987 |
| 4683484 | Lateral confinement of charge carriers in a multiple quantum well structure Non-invasive structures for laterally confining charge carriers in the narrow bandgap layers of a multiple quantum wall semiconductor device are disclosed. Such structures can be expected to be useful in charge coupled devices.... | 07/28/1987 |
| 4673959 | Heterojunction FET with doubly-doped channel There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and d... | 06/16/1987 |
| 4661829 | Device using ordered semiconductor alloy An ordered-disordered transition is observed in semiconductor alloys which enables either the ordered or disordered structure to be produced.... | 04/28/1987 |
| 4594603 | Semiconductor device with disordered active region A semiconductor device is disclosed, which includes a disordered alloy converted from at least a first active semiconductor region and a second semiconductor barrier layer that have been disordered by introduction of a disordering element selected from th... | 06/10/1986 |
| 4581621 | Quantum device output switch Quantum-coupled devices, wherein at least two closely adjacent potential wells, (e.g. islands of GaAs in an AlGaAs lattice) are made small enough that the energy levels of carriers within the wells are discretely quantized. This means that, when the bias ... | 04/08/1986 |
| 4550331 | Multilayer modulation doped heterostructure charge coupled device A charge couple device structure includes a thin layer of undoped Alx Ga1-x As as a spacer layer between an n+ doped Alx Ga1-x As layer and an undoped GaAs layer or substrate. This multilayer, selecti... | 10/29/1985 |
| 4511408 | Semiconductor device fabrication with disordering elements introduced into active region Silicon or krypton is used as a disordering element to selectively disorder layers in a heterojunction III-V semiconductor.... | 04/16/1985 |
| 4194935 | Method of making high mobility multilayered heterojunction devices employing modulated doping The mobility of a relatively narrow bandgap semiconductor material can be significantly enhanced by incorporating it into a multilayered structure (10) comprising a first plurality of relatively narrow bandgap layers (12) of the material and a second plur... | 03/25/1980 |
| 4163237 | High mobility multilayered heterojunction devices employing modulated doping The mobility of a relatively narrow bandgap semiconductor material can be significantly enhanced by incorporating it into a multilayered structure (10) comprising a first plurality of relatively narrow bandgap layers (12) of the material and a second plur... | 07/31/1979 |
