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| Number | Title | Issue Date |
| 4825269 | Double heterojunction inversion base transistor A bipolar transistor in which the base region includes a heterostructure and a doped layer of semiconductor material with the heterostructure functioning as a two-dimensional hole gas. The doped layer is sufficiently thin to prevent occurrence of a charge... | 04/25/1989 |
| 4772924 | Device having strain induced region of altered bandgap A strained layer superlattice comprising Gex Si1-x layers interleaved with Si layers is an excellent photodetector at infrared wavelengths due to the large shift in bandgap caused by the strain in the superlattice.... | 09/20/1988 |
| 4771326 | Composition double heterojunction transistor A heterojunction transistor has an acceptor doped superlattice base of sub-micron thickness, a composite emitter with a donor concentration adjacent the base, with a wider bandgap energy than the base, and with a low recombination velocity to minimize min... | 09/13/1988 |
| 4725870 | Silicon germanium photodetector A photodetector, comprising a Gex Si1-x superlattice region between two silicon cladding layers in which the Gex Si1-x layers absorb light, is described.... | 02/16/1988 |
| 4720444 | Layered amorphous silicon alloy photoconductive electrostatographic imaging members with p, n multijunctions An imaging member comprised of a supporting substrate, a p,n multijunction photogenerating layer comprised of from about 8 to about 100 alternating layers of components selected from the group consisting of hydrogenated amorphous silicon, hydrogenated amo... | 01/19/1988 |
| 4661829 | Device using ordered semiconductor alloy An ordered-disordered transition is observed in semiconductor alloys which enables either the ordered or disordered structure to be produced.... | 04/28/1987 |
| 4529455 | Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy A molecular beam epitaxy method of growing Gex Si1-x films on silicon substrate is described.... | 07/16/1985 |
| 4527179 | Non-single-crystal light emitting semiconductor device A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ... | 07/02/1985 |
