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| Number | Title | Issue Date |
| 8441032 | Low-level signal detection by semiconductor avalanche amplification A system and method providing for the detection of an input signal, either optical or electrical, by using a single independent discrete amplifier or by distributing the input signal into independent signal components that are independently amplified. The input sign... | 05/14/2013 |
| 8338857 | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type ... | 12/25/2012 |
| 8338858 | Time correlation system and method A time correlated single photon counting system having a programmable delay generator triggered by a laser fire event detector. The system may be used for chemical agent detection based on Rayleigh scattering using optical time domain reflectometry techniques. The s... | 12/25/2012 |
| 8212286 | Semiconductor light receiving element The semiconductor light receiving element 1 includes a semiconductor substrate 101, and a semiconductor layer having a photo-absorption layer 105 disposed on the top of the semiconductor substrate 101. The semiconductor layer of the semic... | 07/03/2012 |
| 8106422 | SiC avalanche photodiode with improved edge termination An avalanche photodiode semiconductor device (20) for converting an impinging photon (22) includes a base n+ doped material layer (52) formed having a window section (72) for passing the photon (22). An n− doped material layer ( | 01/31/2012 |
| 8093624 | High fill-factor avalanche photodiode A photodiode is provided by the invention, including an n-type active region and a p-type active region. A first one of the n-type and p-type active regions is disposed in a semiconductor substrate at a first substrate surface. A second one of the n-type and p-type ... | 01/10/2012 |
| 8030684 | Mesa-type photodetectors with lateral diffusion junctions The present invention relates to a stable mesa-type photodetector with lateral diffusion junctions. The invention has found that without resorting to the complicated regrowth approach, a simple Zn diffusion process can be used to create high-quality semiconductor ju... | 10/04/2011 |
| 8008688 | Photodiode and method of fabrication The present invention provides a highly reliable photodiode, as well as a simple method of fabricating such a photodiode. During fabrication of the photodiode, a grading layer is epitaxially grown on a top surface of an absorption layer, and a blocking layer, for in... | 08/30/2011 |
| 7928472 | Optical semiconductor device with a distributed Bragg reflector layer An optical semiconductor device comprises a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially formed on a semiconductor substrate; wherein said Bragg ref... | 04/19/2011 |
| 7902570 | Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate c... | 03/08/2011 |
| 7898001 | Single photon detector and associated methods for making the same A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the se... | 03/01/2011 |
| 7893460 | Semiconductor light detecting element including first and second multilayer light reflective structures sandwiching and contacting a light absorptive layer A semiconductor light detecting element comprises: a semiconductor substrate having a first major surface and a second major surface opposite each other; a first reflective layer, an absorptive layer, a phase adjusting layer, and a second reflective layer sequential... | 02/22/2011 |
| 7880197 | Avalanche photodiode having doping region with monotonically increasing concentration distribution In an electron-injection type APD, it is necessary to prevent a dark current increase and to secure the life time of the device. It is demanded to improve reliability of the APD with a lower production cost. With the InP buffer layer having an n-type doping region o... | 02/01/2011 |
| 7875905 | Semiconductor optical receiver device, optical receiver module, and method for manufacturing semiconductor optical receiver device A semiconductor optical receiver device is provided, which a mesa comprising a plurality of semiconductor crystal layers formed on a semiconductor substrate including a pn junction having a first conductive semiconductor crystal layer and a second conductive semicon... | 01/25/2011 |
| 7875906 | Photodetector and production method thereof The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate ... | 01/25/2011 |
| 7863647 | SiC avalanche photodiode with improved edge termination An avalanche photodiode semiconductor device (20) for converting an impinging photon (22) includes a base n+ doped material layer (52) formed having a window section (72) for passing the photon (22). An n− doped material layer ( | 01/04/2011 |
| 7851823 | Semiconductor photodetector device A transmitted light absorption/recombination layer, a barrier layer, a wavelength selection/absorption layer, and an InP window layer having a p-type region are supported by an n-type substrate and arranged in that order. Light with a wavelength of 1.3 μm reaches t... | 12/14/2010 |
| 7829915 | Avalanche photodiode The present invention changes layer polarities of an epitaxy structure of an avalanche photodiode into n-i-n-i-p. A transport layer is deposed above an absorption layer to prevent absorbing photon and producing electrons and holes. A major part of electric field is ... | 11/09/2010 |
| 7808015 | Apparatus comprising an avalanche photodiode Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD ... | 10/05/2010 |
| 7795639 | Avalanche photodiode A photodiode designed to capture incident photons includes a stack of at least three superposed layers of semiconductor materials having a first conductivity type. The stack includes: an interaction layer designed to interact with incident photons so as to generate ... | 09/14/2010 |
| 7791104 | Optical semiconductor device An n-type InGaAs light absorbing layer and an n-type InP layer (first conductivity type semiconductor layer), which is a window layer, and a multiplication layer are multilayered one atop another on an n-type InP substrate. By selectively diffusing impurities and im... | 09/07/2010 |
| 7741657 | Inverted planar avalanche photodiode An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a semiconductor substrate layer including a first type of semiconductor material. The apparatus also includes a multiplication layer including the first type... | 06/22/2010 |
| 7719029 | Negative feedback avalanche diode A single-photon avalanche detector is disclosed that is operable at wavelengths greater than 1000 nm and at operating speeds greater than 10 MHz. The single-photon avalanche detector comprises a thin-film resistor and avalanche photodiode that are monolithically int... | 05/18/2010 |
| 7683397 | Semi-planar avalanche photodiode An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a mesa structure defined in a first type of semiconductor. The first type of semiconductor material includes an absorption region optically coupled to receiv... | 03/23/2010 |
| 7605406 | Rear-illuminated-type photodiode array A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, ... | 10/20/2009 |
| 7582920 | Apparatus comprising an avalanche photodiode Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD ... | 09/01/2009 |
| 7560751 | Semiconductor photo-detecting element In a semiconductor photo-detecting element (an avalanche photodiode), a high-sensitivity element is obtained by incorporating a multiplication layer having high-performance multiplication characteristics. By using a structure which reduces an electric field applied ... | 07/14/2009 |
| 7557387 | Avalanche photodiode An ultra high speed APD capable of realizing reduction in an operating voltage and quantum efficiency enhancement at the same time is provided. Under operating conditions APD, a doping concentration distribution of each light absorbing layer is determined so that a ... | 07/07/2009 |
| 7462889 | Avalanche photodiode An avalanche photodiode according to this invention include a light receiving region 101 surrounded by a ring-shaped trench 13, a first electrode 11 formed on the light receiving region 101, a second electrode 12 formed on the peri... | 12/09/2008 |
| 7449727 | Overvoltage-protected light-emitting semiconductor device An LED incorporating an overvoltage protector with a minimum of space requirement. The LED itself comprises a p-type semiconductor substrate, a light-generating semiconductor region grown epitaxially thereon, a first electrode on the light-generating semiconductor r... | 11/11/2008 |
| 7432537 | Avalanche photodiode structure An avalanche photodiode (APD) includes an anode layer, a cathode layer, an absorption layer between the anode layer and the cathode layer, a first multiplying stage between the absorption layer and the cathode layer, a second multiplying stage between the first mult... | 10/07/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7378689 | Apparatus comprising an avalanche photodiode Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD ... | 05/27/2008 |
| 7368762 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a... | 05/06/2008 |
| 7368750 | Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat... | 05/06/2008 |
| 7348608 | Planar avalanche photodiode A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the ... | 03/25/2008 |
| 7348607 | Planar avalanche photodiode The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semi... | 03/25/2008 |
| 7345325 | Avalanche photodiode An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor mul... | 03/18/2008 |
| 7341921 | Photodiode The invention provides a method of manufacturing an avalanche diode comprising the steps of applying a mask (6) over an active diode region (5) in a wafer (1), and damaging the region the surrounding the active diode region by breaking bonds in ... | 03/11/2008 |
| 7326970 | Metamorphic avalanche photodetector A metamorphic avalanche photodetector includes a substrate, and an active structure supported on the substrate. The active structure has a metamorphic absorption structure that absorbs light and responsively produces primary charge carriers, and an avalanche multipl... | 02/05/2008 |
