Class 257/181 - With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the housing is provided with large
No. of patents: 73
Last issue date: 05/24/2011

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Number	Title	Issue Date
6054727	Power semiconductor component A power semiconductor component includes a semiconductor body having a beed peripheral surface, a cathode electrode and an anode electrode. A materially joined connection between at least the anode electrode and the semiconductor body is not produced by ...	04/25/2000
5990501	Multichip press-contact type semiconductor device A multichip press-contact type semiconductor device including a plurality of semiconductor chips, a plurality of heat buffer plates, a conductive metal sheet, and first and second press-contact electrode plates. The heat buffer plates are disposed to corr...	11/23/1999
5874774	Flat package semiconductor device A semiconductor device is provided which includes a plurality of semiconductor chips each of which has a first main electrode and a control electrode on a first main surface and a second main electrode on a second main surface, and a plurality of support ...	02/23/1999
5866944	Multichip press-contact type semiconductor device In the present invention, by virtue of heat buffer plates respectively located on the major surfaces of IGBT chips and FRD chips arranged in a single plane, the total thickness of each chip and a corresponding one of the heat can be set to a substantially...	02/02/1999
5777351	Compression bonded type semiconductor element and semiconductor device A compression bonded type semiconductor element having a ring-shaped gate terminal in the form of an annular metal disk projecting through the side of an insulating cylinder. The ring-shaped gate terminal includes an inner circumferential planar portion w...	07/07/1998
5760425	Internal compression bonded semiconductor device with a chip frame enabling a longer creepage distance The top-side (n-type) electrode and bottom-side (p-type) electrode of a Si chip with a p-n junction are pressed against a Cu cathode electrode and a Cu anode electrode via Mo plates respectively, thereby establishing electrical connection. The inner wall ...	06/02/1998
5739556	Pressure contact housing for semiconductor components In a pressure contact housing for semiconductor components, the gate electrode contact ring 4 is provided with spiral recesses 5. The latter can absorb axial movements produced during the assembly of the housing, without loading the material. A good and d...	04/14/1998
5726466	Press pack power semiconductor device incorporating a plurality of semiconductor elements A press pack power semiconductor device incorporates a number of semiconductor elements. The power semiconductor device has a first insulating frame surrounding each of the semiconductor elements and having a lattice for positioning the semiconductor elem...	03/10/1998
5705853	Power semiconductor module A power semiconductor module is specified in which at least one semiconductor chip, which is fitted on a baseplate, is made contact with by a respective contact plunger. The position of the contact plungers can be set individually in a manner correspondin...	01/06/1998
5661315	Controllable power semiconductor component In the case of a controllable power semiconductor component, which comprises at least one planar, essentially rectangular power semiconductor chip (13), which power semiconductor chip (13) has on its top side a large-area metallization layer (14) for the ...	08/26/1997
5641976	Pressure contact type semiconductor device with axial bias and radial restraint between a distortion buffer plate and a semiconductor body An alloy-free pressure contact type semiconductor device maintains a high reliability during transportation even without a pressure contact tool such as a simplified stack and therefore does not require a high transportation cost. Through holes (H1) and (...	06/24/1997
5635734	Insulated gate type semiconductor device in which the reliability and characteristics thereof are not deteriorated due to pressing action and power inverter using the same An insulated gate type semiconductor device has a gate electrode which controls current flow between two regions of the same conductivity type in a semiconductor substrate. A main electrode has a first portion contacting a first one of the two regions, a ...	06/03/1997
5633536	Press contact type semiconductor device Provided is a press contact type semiconductor device which improves the shape of an insulator formed along an outer peripheral edge and a major surface of a semiconductor substrate, simplifies alignment of an anode heat compensator and a cathode heat com...	05/27/1997
5591993	Structure for connecting flat type semiconductor switches in parallel A connection structure for connecting a plurality of semiconductor switches in parallel includes a pressed contact for a semiconductor switch. The pressed contact includes a layered structure which connects a drain conductor to a plurality of drain electr...	01/07/1997
5539232	MOS composite type semiconductor device A plurality of segments of small-sized IGBT devices are arranged concentrically in a plurality of rows in a pellet substrate. Each segment has an independent polysilicon gate electrode layer. A gate electrode terminal lead-out portion is provided at a cen...	07/23/1996
5519231	Pressure-connection type semiconductor device having a thermal compensator in contact with a semiconductor base substrate in an alloy-free state In order to obtain a pressure-connection type semiconductor device while preventing misregistration of a semiconductor base substrate and a thermal compensator with no penetration of an insulating/holding material and a method suitable for fabricating thi...	05/21/1996
5436473	Gate lead for center gate pressure assembled thyristor The gate lead for a center gate thyristor consists of a contact disk connected to the end of an elongated flexible conductive lead wire which is insulated over its major length. The lead is threaded through the central opening in a plunger which is receiv...	07/25/1995
5436502	Semiconductor component and method for the manufacturing thereof A semiconductor component comprises a semiconductor body that has its underside secured on a metallic substrate and is joined at its upper side to an auxiliary member composed of a material having great thermal conductivity and which serves as a heat buff...	07/25/1995
5428229	Pressure contact type MOS semiconductor device and fabrication method of the same A MOS semiconductor device which exhibits high switching operations including high turn-on and an excellent self-cooling capability. The device prevents damage to insulation films and electrodes thereof. An IGT includes a multi-layer structure having a p ...	06/27/1995
5371386	Semiconductor device and method of assembling the same In a semiconductor device, a semiconductor element is stored in a casing while being held by external electrodes through first and second electrodes. The outer peripheral edge of the first electrode plate is projected outwardly beyond that of the semicond...	12/06/1994
5360985	Press-contact type semiconductor device In a semiconductor device, a pellet electrode, which is formed on a mesa-shaped pellet, and an external electrode, with which a package is provided, are in pressure-contact with each other. A soft-metal plate which has projections along its surface is arr...	11/01/1994
5278434	Pressure engagement structure for a full press-pack type semiconductor device Coned disc springs (84, 86) lie between a gate extracting electrode (80G) held in a ringlike recess (63) of an external cathode electrode (60K) and a bottom surface of the ringlike recess (63). A semiconductor body (30) is pressed against an anode distort...	01/11/1994
5250821	Electronic power device having plural elementary semiconductor components connected in parallel Plural modular elementary semiconductor power components are respectively contained within plural semiconductor chip regions of a same semiconductor slice. A metallic layer covers a first surface of the semiconductor slice and is commonly connected to ano...	10/05/1993
5221851	Controlled-turn-off high-power semiconductor component In a large-area controlled-turn-off high-power semiconductor component containing a multiplicity of finely structured individual components, a semiconductor device (12) is formed by a multiplicity of small-area semiconductor chips (7) which are accommodat...	06/22/1993
5027192	Fast power semiconductor circuit In a fast power semiconductor circuit with a gate turn-off component in the form of a large-area semiconductor substrate (9) and a drive circuit, which is connected to gate and cathode of the component and generates a current pulse suitable for turning of...	06/25/1991
4882612	Power semiconductor device In a power semiconductor device according to the present invention, a sheet, formed of a soft metal such as Ag, is provided on that portion of a pressing control electrode which is brought into contact with an Al gate electrode of a pellet. By means of th...	11/21/1989
4757366	Light-triggerable thyristor having low-loss feed of the trigger energy A light-triggerable thyristor comprises a cathode contact and a light conductor arranged in a bore thereof for supplying trigger energy. In order to obtain optimally low losses of the trigger energy and to guarantee simple assembly and interchangeability,...	07/12/1988
4673961	Pressurized contact type double gate static induction thyristor A pressurized contact type double gate static induction thyristor comprising a semiconductor body located in a casing and having cathode electrodes and a first gate electrode at one principal surface side thereof and anode electrodes and a second gate ele...	06/16/1987
4559697	Method of fixing insertion electrode panel in compression-bonded semiconductor device A method of fixing an insertion electrode panel in a compression-bonded semiconductor device, in which a screen (20) having a pattern portion (22a) is aligned on a semiconductor element (1) having an electrode pattern (3), which pattern portion (22a) is f...	12/24/1985
4556898	Semiconductor device A semiconductor device includes a semiconductor element (21) having a cathode (21d) divided into a plurality of islands, each of the cathode islands (21d) being electrically connected through a cathode insert (24). The cathode insert (24) comprises a cup-...	12/03/1985
4388635	High breakdown voltage semiconductor device A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is expos...	06/14/1983
4156963	Method for manufacturing a semiconductor device A method for manufacturing a semiconductor device having a cathode layer divided into a plurality of mesa type cathode layer portions and used under pressure applied from the cathode layer side through a pressing plate, the method comprising steps of disp...	06/05/1979
4063348	Unique packaging method for use on large semiconductor devices A silicon controlled rectifier having a triangular base with a planar mounting surface and holes at the apices of the angles to receive screws for mounting the rectifier to a heat sink surface. A cylindrical anode is connected to the base and a semiconduc...	12/20/1977

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Class 257/181 - With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring)