Class 257/181 - With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the housing is provided with large
No. of patents: 73
Last issue date: 05/24/2011

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Number	Title	Issue Date
7948007	Power semiconductor module with flush terminal elements A power semiconductor module includes a housing, terminal elements leading to the outside of the housing, an electrically insulated substrate arranged inside the housing, with the substrate being comprised of an insulating body and having on the first main face faci...	05/24/2011
7671382	Semiconductor device with thermoplastic resin to reduce warpage A semiconductor device which includes a radiating plate, a wiring patterned layer on the radiating plate via an insulating layer, at least one semiconductor chip mounted on the wiring patterned layer. The semiconductor chip has a surface electrode. The semiconductor...	03/02/2010
7420224	Active rectifier module for three-phase generators of vehicles A rectifier for rectifying alternating current into direct current is described, in which a three-phase generator includes a three-phase stator winding. The phases of the stator winding are triggered via switching elements of a power circuit. The power circuit is co...	09/02/2008
7397066	Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/...	07/08/2008
7262444	Power semiconductor packaging method and structure A semiconductor chip packaging structure comprising a dielectric film having one or more through holes aligned with the one or more contact pads of at least one power semiconductor chip. A patterned electrically conductive layer adjacent to the dielectric film has o...	08/28/2007
7242584	Housing for power semiconductor modules A housing for power semiconductor modules with a base plate or for direct mounting on a heat sink. The housing (10) surrounds an electrically insulating substrate (40) with metal connection tracks (41) disposed thereon. The metal connection trac...	07/10/2007
7221004	Semiconductor module Disclosed is a semiconductor module comprising a semiconductor element (1) and two terminal electrodes (3a, 3b, 3c) between which the semiconductor element (1) is disposed and with which the semiconductor eleme...	05/22/2007
7196412	Multi-chip press-connected type semiconductor device A multi-chip press-connected type semiconductor device comprises: a plurality of active element chips to control an electric current flowing in one direction; a plurality of diode chips that transmit the current in a direction opposite to the current transmitting di...	03/27/2007
7145254	Transfer-molded power device and method for manufacturing transfer-molded power device A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t1 of the chip and the thickness t2 of ...	12/05/2006
7132698	Compression assembled electronic package having a plastic molded insulation ring A compression assembled semiconductor package for housing a power semiconductor die which includes two major pole pieces in intimate electrical contact with respective major electrodes of a power semiconductor die. The package includes a plastic molded insulation ri...	11/07/2006
7030476	Rectifier diode device Disclosed is a rectifier diode device. The rectifier diode device includes a conductive base, a semiconductor chip, a conductive lead and insulation resin. A trench and a post are formed in the conductive base in order to increase a bonding surface between the condu...	04/18/2006
6995409	Module for high voltage power for converting a base of IGBT components This power switching cell comprises: at least two power components (4–6) forming a chain (2) of components electrically linked in series by way of at least one intermediate bond (52, 70), and	02/07/2006
6933541	Emitter turn-off thyristors (ETO) A family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor an and off. In a first embodiment of the present invention a family of thyristors are disclosed all of which comprise a pair of MOS transistors, the first of whic...	08/23/2005
6930333	Semiconductor device wiring structure A semiconductor device wiring structure is provided to reduce the wiring inductance and curtail the generation of interfering electromagnetic waves. A semiconductor chip having an anode electrode and a cathode electrode provided on two oppositely-facing main surface...	08/16/2005
6888234	Semiconductor device and manufacturing method for the same A semiconductor device comprising a semiconductor layer and one, or a plurality of, semiconductor elements formed on a surface of the semiconductor layer, characterized in that said semiconductor layer is divided into a plurality of pieces in a region wherein said s...	05/03/2005
6866255	Sputtered spring films with low stress anisotropy Methods are disclosed for fabricating spring structures that minimize helical twisting by reducing or eliminating stress anisotropy in the thin films from which the springs are formed through manipulation of the fabrication process parameters and/or spring material ...	03/15/2005
6863769	Configuration and method for making contact with the back surface of a semiconductor substrate A base body is provided, on which a first sealing ring and a second sealing ring are disposed. A substrate is disposed on the sealing rings in such a way that a cavity is formed between the first sealing ring, the second sealing ring, the base body and the substrate...	03/08/2005
6849879	Crosstalk reduction in a crosspoint thyristor switching array using a shielded dielectric stack A method and apparatus are disclosed for reducing crosstalk and dispersion in a crosspoint monolithic microwave integrated circuit (MMIC) switch array operating in a range between DC and microwave frequencies. In accordance with an exemplary embodiment, the crosspoi...	02/01/2005
6831307	Semiconductor mounting system An object of the present invention is to provide a novel semiconductor mounting system having a semiconductor mounting member, a metal member and a joining layer joining the mounting and metal members, to improve the flatness of a mounting surface and to control the...	12/14/2004
6828600	Power semiconductor module with ceramic substrate A power semiconductor module is presented in which terminal elements are press-fitted into openings in a plastic housing. This measure improves the reliability of the internal bonds between the substrate and the terminal element since there is no longer a risk of th...	12/07/2004
6781227	Compression assembled electronic package having a plastic molded insulation ring A compression assembled semiconductor package for housing a power semiconductor die which includes two major pole pieces in intimate electrical contact with respective major electrodes of a power semiconductor die. The package includes a plastic molded insulation ri...	08/24/2004
6759735	High power semiconductor device having semiconductor chips A plurality of semiconductor chips is each arranged over a first conductor. Each of semiconductor chips has a first main electrode, a second main electrode and a control electrode. A second conductor is electrically connected to the second main electrode and has col...	07/06/2004
6710443	INTEGRATED CIRCUIT PROVIDING THERMALLY CONDUCTIVE STRUCTURES SUBSTANTIALLY HORIZONTALLY COUPLED TO ONE ANOTHER WITHIN ONE OR MORE HEAT DISSIPATION LAYERS TO DISSIPATE HEAT FROM A HEAT GENERATING STRUCTURE In one embodiment, an integrated circuit includes a heat generating structure within a dielectric region and one or more substantially horizontally arranged heat dissipation layers within the dielectric region. Each heat dissipation layer includes electrically inact...	03/23/2004
6686658	Semiconductor device, including an arrangement to provide a uniform press contact and converter using same In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arran...	02/03/2004
6683329	Semiconductor device with slot above guard ring A semiconductor device includes an electronic circuit, a metal guard ring surrounding the electronic circuit, and a passivation layer covering the electronic circuit and guard ring. The passivation layer has a slot extending from the surface of the device...	01/27/2004
6614105	Chip-type semiconductor device A TRIAC which is one species of chip-type semiconductors includes an element body made of silicon, electrodes provided on one face of the element body, a molybdenum plate provided on one of the electrodes by an alloy plate made of aluminum and silicon, a ...	09/02/2003
6504185	Compound semiconductor device and method for controlling characteristics of the same A compound semiconductor device is formed having a plurality of FETs exhibiting the same electrode ratio of a difference between a surface area of the active region and the combined overlapping surface area of the source and drain ohmic electrodes to the ...	01/07/2003
6495924	Semiconductor device, including an arrangement to provide a uniform press contact and converter using same In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arran...	12/17/2002
6445013	Gate commutated turn-off semiconductor device A first cathode flange (14) provided with branch-like protrusions (14d) extending towards substantially its outer periphery and a gate flange (15) provided with branch-like protrusions (15c) extending towards substantially its outer periphery are connecte...	09/03/2002
6423988	Pressure-contact semiconductor device This invention relates to a pressure-contact type semiconductor device (1) having a ring-shaped gate terminal, and aims at overcoming such a technical problem that a gate current is not uniformly supplied to a semiconductor substrate (4) due to a connecti...	07/23/2002
6373129	Semiconductor apparatus with pressure contact semiconductor chips A semiconductor apparatus includes a plurality of semiconductor units and a common gate liner having silicon chip resistors at portions corresponding to the semiconductor units. Each unit includes a semiconductor chip, a collector base plate fixed to the ...	04/16/2002
6369411	Semiconductor device for controlling high-power electricity with improved heat dissipation A semiconductor device including (a) a base plate, (b) an insulation substrate including of an insulator plate with a front electrode and a back electrode bonded thereon and fixed onto the base plate by the back electrode, (c) a semiconductor element fast...	04/09/2002
6365965	Power semiconductor module with terminals having holes for better adhesion A power semiconductor module, a metal terminal for the power semiconductor module, and methods of fabricating a power semiconductor module and the metal terminal are disclosed. In the power semiconductor module, the metal terminal improves the adhesive st...	04/02/2002
6323547	Pressure contact type semiconductor device with ringshaped gate terminal In a GCT device which controls large current at the operating frequency of 1 kHz or more, a ring-shaped gate terminal (10) is made of a magnetic material with the maximum permeability of 15,000 or less in the CGS Gaussian system of units. Further, in the ...	11/27/2001
6320254	Plug structure A plug structure capable of directly coupling to a packageless bonding pad without having to go through a third conductive medium. The plug structure includes several plugs on a base substrate, such as a printed circuit board or a carrier. A solder is dis...	11/20/2001
6307239	CMOS sense structure having silicon dioxide outer ring around sense region A CMOS structure having a silicon dioxide outer ring around the sense region. The CMOS sense structure has a substrate, a n- region, a n+ region, an isolation region, a field implant region and a silicon dioxide outer ring region. Th...	10/23/2001
6303987	Compression bonded type semiconductor device A compression bonded type semiconductor device including a semiconductor substrate having a top surface and a bottom surface a gate electrode and a cathode electrode formed on the top surface of said substrate, and an anode electrode formed on the bottom ...	10/16/2001
6168976	Socketable BGA package Socketable balls are mounted to a BGA package by first placing the balls into pockets or holes of a tray that are sized such that when the balls are inserted, an upper portion of the ball protrudes above a planar surface of the tray. A layer of a polymer ...	01/02/2001
6166402	Pressure-contact type semiconductor element and power converter thereof A double circular gate conductor 9 comprises a first circular gate conductor 7 connected to a gate electrode 2a, a second circular gate conductor 8, and a connecting conductor which connects the first circular gate conductor 7 and the second circular gate...	12/26/2000
6081039	Pressure assembled motor cube A pressure assembled power module is provided with first and second die, the first and second die being stacked atop one another and sandwiched between first and second conductive sheets, where the die are separated by a relatively flat central conductive...	06/27/2000

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Class 257/181 - With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring)