Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 8148749 | Trench-shielded semiconductor device Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device comprises a semiconductor region having a surface, a first area of the semiconductor region, a well region of ... | 04/03/2012 |
| 7569867 | Light-emitting device and method of making same A light-emitting device which comprises as one unit a semiconductor light-emitting element; a first liquid for condensing the light from the semiconductor light-emitting element; a second liquid that is separate from but contacts the first liquid; an airtight space ... | 08/04/2009 |
| 7414273 | Two-dimensional silicon controlled rectifier A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area) within a given SCR area, i.e., effectively increasing the SCR width. In... | 08/19/2008 |
| 7291874 | Laser dicing apparatus for a gallium arsenide wafer and method thereof The present invention discloses a laser dicing apparatus for a gallium arsenide wafer and a method thereof, wherein firstly, a gallium arsenide wafer is stuck onto a holding film; next, the gallium arsenide wafer together with the holding film is disposed on a worki... | 11/06/2007 |
| 7279697 | Field effect transistor with enhanced insulator structure A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the... | 10/09/2007 |
| 7217968 | Recessed gate for an image sensor A novel image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate, a gate comprising a dielectric layer and gate conductor formed on the dielectric layer, a collection well layer of a first conductivity type formed below a surfa... | 05/15/2007 |
| 7112987 | Semiconductor sensor with a field-effect transistor The semiconductor sensor has at least one field-effect transistor (31; 31, 32) which is coupled to a sensitive electrode and which has measuring phases that are interruptible by idle phases through a control device (50). During the idle phases, the fie... | 09/26/2006 |
| 7067383 | Method of making bipolar transistors and resulting product A method of forming bipolar transistors by using the same mask to form the collector region in a substrate of an opposite conductivity type as to form the base in the collector region. More specifically, impurities of a first conductivity type are introduced into a ... | 06/27/2006 |
| 7004452 | Valve seal assemblies and methods A method of sealing a valve engaging member to a valve body about a borehole and structure thereof. Two seal members disposed on either side of the valve engaging member include a seat member adjacent the valve engaging member and a pocket insert adjacent the seat m... | 02/28/2006 |
| 6849346 | Electrode and thin film EL device including the same and methods of fabricating the same and display device and lighting system including the thin film EL device A thin film EL device is disclosed which includes a hole-injecting electrode, an electron-injecting electrode paired with the hole-injecting electrode, and a functional layer provided between the hole-injecting electrode and the electron-injecting electrode and emit... | 02/01/2005 |
| 6664572 | Valve seal assemblies and methods Valve sealing assemblies and methods of sealing a valve engaging member to a valve body. A first seat member is fixedly disposed within a valve body pocket. Two seal rings are disposed between a valve pocket and a pocket insert and a seal ring is disposed... | 12/16/2003 |
| 6452219 | Insulated gate bipolar transistor and method of fabricating the same An IGBT having a buffer layer for shortening the turn-off time and for preventing the latching up is improved. The buffer layer of the present invention is not bare at the edge of a diced cross-section of the IGBT chip. According to this construction, a w... | 09/17/2002 |
| 6229196 | Semiconductor device and fabrication method thereof The semiconductor device includes a semiconductor base body (11) formed of a damaged layer (102) serving as a gettering layer, a P+ collector layer (103), an N+ buffer layer (104), and an N- layer (105) laid one on top of ... | 05/08/2001 |
| 6111289 | Semiconductor device A semiconductor device has first and second electrical terminals. The device comprises at least one n/p or p/n first junction adjacent the first terminal, and at least one of the other of a p/n or n/p second junction adjacent the second terminal. It also ... | 08/29/2000 |
| 5973367 | Multiple gated MOSFET for use in DC-DC converter A power MOSFET includes a pair of electrically isolated gates having different gate widths. The MOSFET is connected in a switching mode DC-DC converter, with the gates being driven by a pulse width modulation (PWM) control to vary the duty cycle of the ga... | 10/26/1999 |
| 5923066 | Field-effect-controllable semiconductor component A field-effect-controllable semiconductor component includes a semiconductor body with first and second surfaces. An inner zone of a first conduction type adjoins the first surface. An anode zone of the opposite, second conduction type adjoins the inner z... | 07/13/1999 |
| 5874751 | Insulated gate thyristor An insulated gate thyristor is provided which includes a first-conductivity-type base layer of high resistivity, first and second second-conductivity-type base regions formed in a surface layer of a first major surface of the first-conductivity-type base ... | 02/23/1999 |
| 5753943 | Insulated gate type field effect transistor and method of manufacturing the same In an insulated gate type field effect transistor and a manufacturing method of the same, a diffusion region is formed in a semiconductor substrate under an oxidizing atmosphere by thermal diffusion, and a first conductivity type semiconductor layer is fo... | 05/19/1998 |
| 5751024 | Insulated gate semiconductor device It is an object to obtain an insulated gate semiconductor device with an unreduced current value capable of being turned off while adopting structure for reducing the ON voltage, and a manufacturing method thereof. An N layer (43) is provided in close con... | 05/12/1998 |
| 5751023 | Semiconductor device and method of manufacturing the same In a semiconductor device and a method of manufacturing the same, the semiconductor device is provided with an n+ -type layer located between an n-type buffer layer and a p-type collector layer and having a higher impurity concentration than n-... | 05/12/1998 |
| 5710445 | Gate turn-off thyristor for high blocking voltage and small component thickness A GTO is specified which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode emitter (9). The anode emitter (6) is designed as a transparent emitter and has anode ... | 01/20/1998 |
| 5621226 | Metal-insulator semiconductor gate controlled thyristor In a complex semiconductor device, an IGBT and a thyristor are formed in an identical semiconductor substrate to be connected in parallel with each other between main electrodes such that an end of the thyristor on the cathode side is connected to the mai... | 04/15/1997 |
| 5504351 | Insulated gate semiconductor device A method of forming an insulated gate semiconductor device (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that is bounded by a first major surface (12). A control electrod... | 04/02/1996 |
| 5491351 | Gate turn-off thyristor A GTO having a cathode emitter (7) is specified, which cathode emitter has a low emission efficiency. This cathode emitter (7) provides a clearly increased resistance to the formation of current filaments. As a result, relatively high turn-off current den... | 02/13/1996 |
| 5459339 | Double gate semiconductor device and control device thereof A semiconductor device thyristor structure includes a first conductive type collector region, second conductive type and first conductive type base regions, and a second conductive type emitter region. First conductive type regions and second conductive t... | 10/17/1995 |
| 5378903 | Semiconductor device with low on-voltage and large controllable turn-off current The semiconductor device is formed of an EST part and an IGBT part, wherein the EST part has a first MOSFET and a second MOSFET synchronously switching, and the IGBT part has a third MOSFET controllable independently from them. At a turn-off of the semico... | 01/03/1995 |
| 5309002 | Semiconductor device with protruding portion Between electrodes (9) and (10) are formed a p+ substrate (2), an n- epitaxial layer (1) having a protruding portion (3), an n+ diffusion region (4) and p+ diffusion regions (13). Control electrodes (6) are form... | 05/03/1994 |
| 5273917 | Method for manufacturing a conductivity modulation MOSFET A conductivity modulation type MOSFET (IGBT) including an n-type high resistance layer, p-type base regions selectively formed in a first major surface of the high resistance layer, n-type source regions formed in the surface of each base region, a p... | 12/28/1993 |
| 5200632 | Conductivity modulation MOSFET A conductivity modulation type MOSFET including a first region of a first conductivity type having a low impurity concentration, second regions of a second conductivity type selectively formed on the surface region of one side of the first region, third r... | 04/06/1993 |
| 4984049 | Static induction thyristor A static induction thyristor having a mesh like gate region in front of the cathode, and between the gate region and the cathode a high resistance region having effective impurity concentration of 1011 cm-3 -5×1014 cm | 01/08/1991 |
| 4975751 | High breakdown active device structure with low series resistance Series resistance in the low impurity portion of a high breakdown PN junction of a three or four layer device is reduced by providing an increased impurity region at the junction of the same conductivity type as the low impurity portion and having an impu... | 12/04/1990 |
| 4967243 | Power transistor structure with high speed integral antiparallel Schottky diode A power semiconductor device which comprises either a bipolar transistor or a MOSFET, incorporates an integral Schottky diode in antiparallel connection with the transistor for conducting reverse current through the power semiconductor device. By fabricat... | 10/30/1990 |
| 4961100 | Bidirectional field effect semiconductor device and circuit An insulated field effect semiconductor device having source and drain regions extending to opposed surfaces of its semiconductor body is bidirectional and capable of blocking voltages in either of two opposing polarities and comprises a four terminal dev... | 10/02/1990 |
| 4825270 | Gate turn-off thyristor The present invention relates to a buried gate type gate turn-off thyristor. A low-resistance layer which is buried in a cathode base layer has a multiplicity of small bores below a cathode emitter layer. The distance between each pair of adjacent small b... | 04/25/1989 |
| 4752818 | Semiconductor device with multiple recombination center layers A semiconductor device comprises two main electrode regions, i.e., cathode and anode regions consisting of high impurity concentration regions of opposite conductivity types, a low impurity concentration region locally formed between the two main electrod... | 06/21/1988 |
| 4613767 | Low forward-voltage drop SCR An SCR having a reduced forward-voltage drop comprising an independently powered latch circuit driving an output transistor in combination with an additional turn-off transistor. The SCR provides saturated operation of the output transistor and self-commu... | 09/23/1986 |
| 4586070 | Thyristor with abrupt anode emitter junction A thyristor has a pnpn four layer structure having a positive bevel in an anode side and a negative bevel in a cathode side. A ramp of a distribution of impurity concentrations in an anode-emitter layer near an anode-emitter junction is greater than a ram... | 04/29/1986 |
| 4219832 | Thyristor having low on-state voltage with low areal doping emitter region A thyristor comprising a four-layer semiconductor substrate of PNPN structure in which the sum of the thicknesses in the layered direction of the intermediate P-type and N-type layers is less than 400μ, and the amount of impurities per unit area of eithe... | 08/26/1980 |
| 4146906 | Low forward voltage drop semiconductor device having polycrystalline layers of different resistivity A semiconductor device has one layer of a diode formed by diffusion of an impurity from a polycrystalline layer portion formed on a region in which the layer is to be formed. The polycrystalline layer portion is composed of two layers, the resistivity of ... | 03/27/1979 |
| 3990091 | Low forward voltage drop thyristor A thyristor is provided with a low forward voltage drop (Vf) while providing a typical gate current to trigger (Ig). The working point in the cathode-base region of the thyristor has an impurity concentration less than 5 × 1015... | 11/02/1976 |
