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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Number | Title | Issue Date |
| 7692211 | Super GTO-based power blocks A gate turn-off thyristor (GTO) device has a lower portion, an upper portion and a lid. The lower portion has a lower base region of a first conductivity type, and a lower emitter region of a second conductivity type disposed at or from a lower surface of the lower ... | 04/06/2010 |
| 7256489 | Semiconductor apparatus In a semiconductor apparatus in which a main current of a semiconductor device flows through a wiring pattern formed on an insulation circuit board, the rise in temperature of the wiring pattern is suppressed and the increase in cost of parts can be minimized. On th... | 08/14/2007 |
| 7190070 | Modular power semiconductor module A modular power semiconductor module for mounting on a heat sink comprises a plurality of partial modules, each having a base plate and a framelike housing as well as terminal elements for load terminals and auxiliary terminals. Adjacent partial modules are assemble... | 03/13/2007 |
| 7091580 | Semiconductor device When a silicone gel is injected into a case, since the gel is liquid before curing, the gel attempts to rise along a minute gap formed between a front face of a first electrode and a rear face of a resin member due to capillary action. However, since the gap becomes... | 08/15/2006 |
| 7034345 | High-power, integrated AC switch module with distributed array of hybrid devices A novel architecture of high-power four-quadrant hybrid power modules based on high-current trench gate IGBTs and arrays of low-current wide-bandgap diodes is conceived. The distributed physical layout of high power density wide-bandgap devices improves the cooling ... | 04/25/2006 |
| 6995409 | Module for high voltage power for converting a base of IGBT components This power switching cell comprises: at least two power components (4–6) forming a chain (2) of components electrically linked in series by way of at least one intermediate bond (52, 70), and | 02/07/2006 |
| 6933541 | Emitter turn-off thyristors (ETO) A family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor an and off. In a first embodiment of the present invention a family of thyristors are disclosed all of which comprise a pair of MOS transistors, the first of whic... | 08/23/2005 |
| 6930333 | Semiconductor device wiring structure A semiconductor device wiring structure is provided to reduce the wiring inductance and curtail the generation of interfering electromagnetic waves. A semiconductor chip having an anode electrode and a cathode electrode provided on two oppositely-facing main surface... | 08/16/2005 |
| 6914325 | Power semiconductor module A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such th... | 07/05/2005 |
| 6885079 | Methods and configuration to simplify connections between polysilicon layer and diffusion area An electronic device supported on a semiconductor substrate. The semiconductor device includes a diffusion area in the substrate and a polysilicon layer extending over the substrate and contacting the diffusion area. The electronic device further includes a conducti... | 04/26/2005 |
| 6787815 | High-isolation semiconductor device A switching device for switching a plurality of RF signal lines to deliver a selected one of the RF signals to a receiver has an isolation D/U characteristic as high as 40 dB or higher. The switching device includes a mounting board made of dielectric and a matrix s... | 09/07/2004 |
| 6624448 | Semiconductor device with multiple supporting points A semiconductor device having a supporting member that reduces a resonance phenomenon. A pair of reinforcing members is fixed on a gate drive substrate with spacers interposed there between and upright portions of the pair of reinforcing members are faste... | 09/23/2003 |
| 6611006 | Vertical component peripheral structure A power component formed in an N-type silicon substrate, the lower and upper surfaces of which respectively include a first and a second P-type region that do not extend to the component periphery, a high voltage being capable of existing between the firs... | 08/26/2003 |
| 6605870 | Pressure-contact type semiconductor device A pressure-contact type semiconductor device comprises a plurality of semiconductor elements (IGBTs) which are in pressure contact with one another, and in which first main electrodes are electrically connected to a first common main power source plate (p... | 08/12/2003 |
| 6445013 | Gate commutated turn-off semiconductor device A first cathode flange (14) provided with branch-like protrusions (14d) extending towards substantially its outer periphery and a gate flange (15) provided with branch-like protrusions (15c) extending towards substantially its outer periphery are connecte... | 09/03/2002 |
| 6323547 | Pressure contact type semiconductor device with ringshaped gate terminal In a GCT device which controls large current at the operating frequency of 1 kHz or more, a ring-shaped gate terminal (10) is made of a magnetic material with the maximum permeability of 15,000 or less in the CGS Gaussian system of units. Further, in the ... | 11/27/2001 |
| 6166402 | Pressure-contact type semiconductor element and power converter thereof A double circular gate conductor 9 comprises a first circular gate conductor 7 connected to a gate electrode 2a, a second circular gate conductor 8, and a connecting conductor which connects the first circular gate conductor 7 and the second circular gate... | 12/26/2000 |
| 6128200 | Butt-joint CPU mounting structure A butt-joint CPU mounting structure includes a connector having two opposite faces. Each face has a receiving slot disposed therein adapted to respectively and receivingly engage with a CPU module and an edge of a main board of a computer thereby connecti... | 10/03/2000 |
| 5821618 | Semiconductor component with insulating housing A semiconductor component includes an insulating housing. A plurality of sheet-metal mounting plates are disposed in one and the same plane and are electrically separated from one another in the housing. Semiconductor switches of a rectifier bridge are el... | 10/13/1998 |
| 5777351 | Compression bonded type semiconductor element and semiconductor device A compression bonded type semiconductor element having a ring-shaped gate terminal in the form of an annular metal disk projecting through the side of an insulating cylinder. The ring-shaped gate terminal includes an inner circumferential planar portion w... | 07/07/1998 |
| 5739556 | Pressure contact housing for semiconductor components In a pressure contact housing for semiconductor components, the gate electrode contact ring 4 is provided with spiral recesses 5. The latter can absorb axial movements produced during the assembly of the housing, without loading the material. A good and d... | 04/14/1998 |
| 5652467 | Semiconductor device and package structure therefore and power inverter having semiconductor device An auxiliary cathode lead is contacted to a cathode buffer electrode which contacts to an unit GTO arranged at the most remote region from a gate pressure contacting portion of a GTO pellet and the push-into effect of the auxiliary cathode current during ... | 07/29/1997 |
| 5554863 | Gate turn-off thyristor A gate turn-off thyristor including: an n-type emitter semiconductor layer divided into a plurality of n-type areas; a p-type base semiconductor layer which cooperates with the n-type emitter semiconductor layer to form a first main circular surface; an n... | 09/10/1996 |
| 5345096 | Turn-off high-power semiconductor component with low inductive housing In a turn-off high-power semiconductor component, in particular in the form of a GTO, comprising a disk-shaped semiconductor substrate (2) which is disposed concentrically in an annular insulating housing (10) between a disk-shaped cathode contact (4), to... | 09/06/1994 |
| 5221851 | Controlled-turn-off high-power semiconductor component In a large-area controlled-turn-off high-power semiconductor component containing a multiplicity of finely structured individual components, a semiconductor device (12) is formed by a multiplicity of small-area semiconductor chips (7) which are accommodat... | 06/22/1993 |
| 5132768 | Semiconductor component with turn-off facility In a semiconductor component with turn-off facility of the GTO type with direct pressure contact, a balancing of the local pressure distribution in the region of the cathode fingers (7) which results in an improved alternating load resistance and also in ... | 07/21/1992 |
| 5063436 | Pressure-contacted semiconductor component In a pressure-contacted large-area power semiconductor element, in which a substrate (1) is compressed between an anode-side (20) and a cathode-side compression plate (19), an improved contact is obtained by arranging, at least between one of the compress... | 11/05/1991 |
| 4885630 | High power multi-layer semiconductive switching device having multiple parallel contacts with improved forward voltage drop A large area solid state multi-layer semiconductive switching device having multiple parallel contacts accommodates large magnitudes of currents and provides a uniform and a relatively low voltage drop for each of its multiple parallel contacts. This is p... | 12/05/1989 |
| 4884126 | Semiconductor device having parallel-connected, self turn-off type semiconductor elements A semiconductor device is disclosed in which at least two semiconductor elements each having a self turn-off function are disposed in a package and connected in paralllel, and in which the semiconductor elements, terminals mounted on the package, and inte... | 11/28/1989 |
| 4127863 | Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast A gate turn-off type thyristor comprises a semiconductor body having four sequentially contiguous layers, adjacent two of which are of opposite type conductivity and form a PN junction therebetween, one outer layer constituting a cathode layer of said bod... | 11/28/1978 |
