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| Number | Title | Issue Date |
| 8373197 | Circuit device Provided is a circuit device having a configuration in which thermal interference between built-in elements is suppressed and being miniaturized in total size. A hybrid integrated circuit device of the present invention includes: a circuit substrate, a sealing resin... | 02/12/2013 |
| 8362519 | Semiconductor device The present teachings provide a semiconductor device comprising: an IGBT element region, a diode element region and a boundary region provided between the IGBT element region and the diode element region are formed in one semiconductor substrate. The boundary region... | 01/29/2013 |
| 8330185 | Semiconductor device having semiconductor substrate including diode region and IGBT region A semiconductor device, including a semiconductor substrate in which a diode region and an IGBT region are formed, is provided. A lifetime control region is formed within a diode drift region. The diode drift region and the IGBT drift region are a continuous region ... | 12/11/2012 |
| 8319255 | Low side Zener reference voltage extended drain SCR clamps In an ultra high voltage lateral DMOS-type device (UHV LDMOS device), a central pad that defines the drain region is surrounded by a racetrack-shaped source region with striations of alternating n-type and p-type material radiating outwardly from the pad to the sour... | 11/27/2012 |
| 8299496 | Semiconductor device having semiconductor substrate including diode region and IGBT region Provided is a semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed. A separation region formed of a p-type semiconductor is formed in a range between the diode region and the IGBT region and extending from an... | 10/30/2012 |
| 8283697 | Internal combustion engine igniter semiconductor device An internal combustion engine igniter semiconductor device is disclosed which is low cost yet secures energy withstand and reverse surge withstand capability. An IGBT includes a clamping diode between a collector electrode and a gate electrode. The IGBT has two n-ty... | 10/09/2012 |
| 8253164 | Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contacts A lateral insulated gate bipolar transistor (LIGBT) includes a drain-anode adjoining trenched contact penetrating through an insulating layer and extending into an epitaxial layer, directly contacting to a drain region and an anode region, and the drain region verti... | 08/28/2012 |
| 8242536 | Semiconductor device A semiconductor device includes a semiconductor substrate having a first surface and a second surface. A main region and a sensing region are formed on the first surface side of the semiconductor substrate. A RC-IGBT is formed in the main region and a sensing elemen... | 08/14/2012 |
| 8237191 | Heterojunction bipolar transistors and methods of manufacture Semiconductor structures and methods of manufacture semiconductors are provided which relate to heterojunction bipolar transistors. The method includes forming two devices connected by metal wires on a same wiring level. The metal wire of a first of the two devices ... | 08/07/2012 |
| 8212284 | Display device and manufacturing method of the display device It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one cond... | 07/03/2012 |
| 8125002 | Semiconductor device and inverter circuit having the same A semiconductor device includes a semiconductor substrate, an insulated gate transistor formed to the semiconductor substrate, a diode formed to the semiconductor substrate, and a control transistor formed to the semiconductor substrate. A first current terminal of ... | 02/28/2012 |
| 7888702 | Display device and manufacturing method of the display device It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one cond... | 02/15/2011 |
| 7825430 | Semiconductor device with a high breakdown voltage device An n− type semiconductor region is provided with an n− diffusion region serving as a drain region, and at one side of the n− diffusion region a p diffusion region and an n+ diffusion region serving as a source region... | 11/02/2010 |
| 7348251 | Modulated trigger device An integrated circuit structure, a trigger device and a method of electrostatic discharge protection, the integrated circuit structure including: a substrate having a top surface defining a horizontal direction, the substrate of a first dopant type; a first horizont... | 03/25/2008 |
| 7326969 | Semiconductor device incorporating thyristor-based memory and strained silicon A semiconductor memory device may comprise a thyristor-based memory having some portions formed in strained silicon, and other portions formed in relaxed silicon. In a further embodiment, a thyristor in the thyristor-based memory may be formed in a region of relaxed... | 02/05/2008 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7265740 | Suppression of leakage current in image acquisition In a manufacturing process of a display device, hydrogenation in an I layer of photodiodes D1 and D2 is progressed less than that in a channel portion of a pixel TFT, and a defect density due to dangling bonds not terminated in the I layer of the photo... | 09/04/2007 |
| 7262442 | Triac operating in quadrants Q1 and Q4 A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into a first and a second well portion, the first portion being connected t... | 08/28/2007 |
| 7235829 | Electronic card with protection against aerial discharge A semiconductor integrated circuit device includes a semiconductor region of a first conductivity type. A first insulated-gate field effect transistor having a source/drain region of a second conductivity type connected to an output terminal is formed on the semicon... | 06/26/2007 |
| 7173290 | Thyristor switch with turn-off current shunt, and operating method A semiconductor switch includes a thyristor and a current shunt, preferably a transistor in parallel with and controlled by the thyristor, which shunts thyristor current at turn-off. The thyristor includes a portion of a bottom drift layer, with a p-n junction forme... | 02/06/2007 |
| 7148522 | Thyristor-based SRAM An integrated circuit structure includes a semiconductor substrate and a thyristor formed thereon. The thyristor has at least four layers, with three P-N junctions therebetween. At least two of the layers are formed horizontally and at least two of the layers are fo... | 12/12/2006 |
| 7130175 | Monolithic integratable circuit arrangement for protection against a transient voltage At least one or more terminals of an integrated circuit, such as a low- or high-side driver stage, are protected against transient or over-voltages by two pairs of diodes. A first pair of diodes includes a regular diode (D1 or D1′) and a Zener-diode (ZD1 or ZD1′... | 10/31/2006 |
| 7126167 | Monolithically integrated resistive structure with power IGBT (insulated gate bipolar transistor) devices A device integrated in a semiconductor substrate of a first type of conductivity being crowned by a semiconductor layer of a second type of conductivity comprising a voltage controlled resistive structure and an IGBT device, wherein the resistive structure comprises... | 10/24/2006 |
| 7118942 | Method of making atomic integrated circuit device A method of mass-producing a solid state device comprises providing an atomically smooth, solid state material layer no more than 40 Angstroms thick. This layer is uniformly and defect-freely bonded onto a substrate to provide an acceptable device yield. ... | 10/10/2006 |
| 7071516 | Semiconductor device and driving circuit for semiconductor device A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electr... | 07/04/2006 |
| 7067899 | Semiconductor integrated circuit device A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small signal section. The substrate and the first epitaxial layer are thus ... | 06/27/2006 |
| 7011991 | Method of making atomic integrated circuit device A method of mass-producing a solid state device comprises providing an atomically smooth, solid state material layer no more than 40 Angstroms thick. This layer is uniformly and defect-freely bonded onto a substrate to provide an acceptable device yield. ... | 03/14/2006 |
| 6977425 | Semiconductor device having a lateral MOSFET and combined IC using the same A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and... | 12/20/2005 |
| 6953953 | Deep trench isolation for thyristor-based semiconductor device A thyristor-based semiconductor device includes a filled trench separating and electrically insulating adjacent thyristor control ports. According to an example embodiment of the present invention, the filled trench is formed in a substrate adjacent to at least one ... | 10/11/2005 |
| 6952027 | Semiconductor integrated circuit device and electronic card using the same A semiconductor integrated circuit device includes a semiconductor region of a first conductivity type. A first insulated-gate field effect transistor having a source/drain region of a second conductivity type connected to an output terminal is formed on the semicon... | 10/04/2005 |
| 6933541 | Emitter turn-off thyristors (ETO) A family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor an and off. In a first embodiment of the present invention a family of thyristors are disclosed all of which comprise a pair of MOS transistors, the first of whic... | 08/23/2005 |
| 6903435 | Vertical power component A vertical power component on a silicon wafer, including a lightly-doped epitaxial layer of a second conductivity type on the upper surface of a heavily-doped substrate of a first conductivity type, the epitaxial layer having a thickness adapted to withstanding the ... | 06/07/2005 |
| 6891206 | Lateral thyristor structure for protection against electrostatic discharge To protect against electrostatic discharges in monolithic integrated circuits in CMOS technology, a lateral thyristor structure is presented which has a much lower firing voltage compared to conventional thyristor structures. ... | 05/10/2005 |
| 6803627 | Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone A reverse-blocking power semiconductor component includes a drift path subdivided into a source-side area and a drain-side area by a region with opposite doping. Provided above this region is a gate. Alternatively, the body zone of the one conduction type is subdivi... | 10/12/2004 |
| 6787881 | Integrated power device with improved efficiency and reduced overall dimensions An integrated power device having a power transistor made up of a first diode and a second diode that are connected together in series between a collector region and emitter-contact region of the power transistor to define a common intermediate node, a control circu... | 09/07/2004 |
| 6784515 | Semiconductor integrated circuit device A solid state device comprises a solid state material substrate; two adjacent semiconductor pockets on the substrate; and a gate layer less than 10 Angstroms thick. The gate layer has at least an atomically smooth bottom major surface, and is perfectly bonded onto t... | 08/31/2004 |
| 6680515 | Lateral high voltage transistor having spiral field plate and graded concentration doping A lateral high voltage transistor device is disclosed. The transistor includes a gate, a drain, and a source. The drain is located apart from the gate to form an intermediate drift region. The drift region has variable dopant concentration between the dra... | 01/20/2004 |
| 6639252 | Integrated circuit and method for fabricating an integrated circuit An integrated circuit includes a first circuit section and a second circuit section, which is necessary or useful for the emulation of the first circuit section. Such an integrated circuit provides the necessary conditions which allow emulating the integr... | 10/28/2003 |
| 6605830 | Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein A power semiconductor device including first and second assembly units. The first assembly of units includes a first semiconductor region of a second conductivity type selectively formed in a first main surface of the first semiconductor layer, a second s... | 08/12/2003 |
| 6599781 | Solid state device A method of mass-producing a solid state device comprises supplying a solid state material substrate; providing two adjacent semiconductor pockets on the substrate; and forming a gate layer less than 3 to 40 Angstroms thick. The gate layer has atomically ... | 07/29/2003 |
