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| Number | Title | Issue Date |
| 7385249 | Transistor structure and integrated circuit A process for forming a conductive gate structure for a sub-0.25 MOSFET technology, has been developed. The process features a conductive gate structure defined from a composite polysilicon or amorphous layer, which in turn is obtained via a dual deposition procedur... | 06/10/2008 |
| 7372100 | Semiconductor device A semiconductor device includes: a semiconductor layer of a first conductivity type; a plurality of first cylindrical semiconductor pillar regions of the first conductivity type periodically provided on a major surface of the semiconductor layer; a plurality of seco... | 05/13/2008 |
| 7332749 | Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thickne... | 02/19/2008 |
| 7291874 | Laser dicing apparatus for a gallium arsenide wafer and method thereof The present invention discloses a laser dicing apparatus for a gallium arsenide wafer and a method thereof, wherein firstly, a gallium arsenide wafer is stuck onto a holding film; next, the gallium arsenide wafer together with the holding film is disposed on a worki... | 11/06/2007 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7274047 | Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection circuit includes a silicon controlled rectifier (SCR) having at least one first type high dopant region coupled to a first r... | 09/25/2007 |
| 7268373 | Thyristor-based memory and its method of operation A semiconductor may contain a plurality of circuits each comprising at least one thyristor having a base region. The base region of at least one of the thyristors has a different doping profile than the others. When a bias circuit is used to bias the thyristors, the... | 09/11/2007 |
| 7266596 | Dynamic storage space linking A method for adding storage space to a server without powering down the server is provided. One embodiment provides a method for dynamically linking a storage space to a network server, comprising: adding a new disk drive image to a network server description for th... | 09/04/2007 |
| 7244969 | Power semiconductor device A power semiconductor device comprises a semiconductor substrate, a gate electrode region (control electrode region), a cathode electrode region (first main electrode region), an anode electrode region (second main electrode region) and a guard ring. The semiconduct... | 07/17/2007 |
| 7242059 | Semiconductor device having DMOS and CMOS on single substrate A semiconductor device includes a P-type semiconductor substrate, a P-channel DMOS transistor, a CMOS transistor. The P-channel DMOS transistor is disposed on the P-type semiconductor substrate and includes a drain formed of the P-type semiconductor substrate and a ... | 07/10/2007 |
| 7235862 | Gate-enhanced junction varactor A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. ... | 06/26/2007 |
| 7227246 | Matching circuits on optoelectronic devices An apparatus comprises a first substrate and a second substrate. The first substrate includes an optoelectronic device and a matching circuit. The second substrate includes a driver circuit. A frequency response of the optoelectronic device is changed by the matchin... | 06/05/2007 |
| 7208814 | Resistive device and method for its production A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the second region, and wherein a resistance-determining width of a current pa... | 04/24/2007 |
| 7180921 | Method and apparatus for driving laser diode sources A method and apparatus for driving a laser diode source, such as a laser diode or a laser diode array. The driver controlling current in response to a signal indicative of excessive current or current density. The signal may be derived from the drive current, the vo... | 02/20/2007 |
| 7173290 | Thyristor switch with turn-off current shunt, and operating method A semiconductor switch includes a thyristor and a current shunt, preferably a transistor in parallel with and controlled by the thyristor, which shunts thyristor current at turn-off. The thyristor includes a portion of a bottom drift layer, with a p-n junction forme... | 02/06/2007 |
| 7170106 | Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye... | 01/30/2007 |
| 7144792 | Method and apparatus for fabricating and connecting a semiconductor power switching device Fabrication processes for manufacturing and connecting a semiconductor switching device are disclosed, including an embodiment for dicing a wafer into individual circuit die by sawing the interface between adjacent die with a saw blade that has an angled configurati... | 12/05/2006 |
| 7141832 | Semiconductor device and capacitance regulation circuit According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes b... | 11/28/2006 |
| 7132698 | Compression assembled electronic package having a plastic molded insulation ring A compression assembled semiconductor package for housing a power semiconductor die which includes two major pole pieces in intimate electrical contact with respective major electrodes of a power semiconductor die. The package includes a plastic molded insulation ri... | 11/07/2006 |
| 7125754 | Semiconductor device and its manufacturing method The present invention has an object of providing a thyristor-type semiconductor device and a manufacturing method for the same which can prevent, even when conventional manufacturing equipment is used, the electrode terminals 13, 14 from being provided in a s... | 10/24/2006 |
| 7126204 | Integrated semiconductor circuit with an electrically programmable switching element The invention relates to a semiconductor circuit (20) having an electrically programmable switching element (10), an “antifuse”, which includes a substrate electrode (2), produced in a substrate (1) which can be electrically biased wi... | 10/24/2006 |
| 7126186 | Compensation component and process for producing the component A compensation component and a process for production thereof includes a semiconductor body having first and second electrodes, a drift zone disposed therebetween, and areas of a first conductivity type and a second conductivity type opposite the first conductivity ... | 10/24/2006 |
| 7101739 | Method for forming a schottky diode on a silicon carbide substrate A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, including forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in ... | 09/05/2006 |
| 7081663 | Gate-enhanced junction varactor with gradual capacitance variation A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region (131 or 181) divided into multiple portions of differing zero-po... | 07/25/2006 |
| 7078787 | Design and operation of gate-enhanced junction varactor with gradual capacitance variation A semiconductor junction varactor is designed with gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region (131 or 181) divided into multiple portions of differing... | 07/18/2006 |
| 7075132 | Programmable junction field effect transistor and method for programming the same A programmable junction field effect transistor (JFET) with multiple independent gate inputs. A drain, source and a plurality of gate regions for controlling a conductive channel between the source and drain are fabricated in a semiconductor substrate. A first porti... | 07/11/2006 |
| 7071516 | Semiconductor device and driving circuit for semiconductor device A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electr... | 07/04/2006 |
| 7067361 | Methods of fabricating silicon carbide metal-semiconductor field effect transistors SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects in the MESFETs. Also provided are SiC MESFETs with a two recess gate s... | 06/27/2006 |
| 7064418 | Method and structure of diode A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentrat... | 06/20/2006 |
| 7061085 | Semiconductor component and system having stiffener and circuit decal A semiconductor component includes a stiffener, a circuit decal attached to the stiffener, and a semiconductor die attached to the stiffener. The circuit decal includes conductors which function as an internal signal transmission system for the component, and a mask... | 06/13/2006 |
| 7049182 | Shunt connection to the emitter of a thyristor A semiconductor device is formed having a thyristor, a pass device and a conductive shunt that electrically connects an emitter region of the thyristor with a node near an upper surface of the substrate. In one example embodiment of the present invention, the conduc... | 05/23/2006 |
| 7049674 | Reverse blocking semiconductor device and a method for manufacturing the same A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory soft recovery, that suppresses aggravation of reverse leakage current, w... | 05/23/2006 |
| 7005704 | Insulated gate drive semiconductor device An aspect of the present invention provides a semiconductor device includes that a drain region of a first conductivity type formed in a semiconductor substrate, a source region of the first conductivity type, an insulating film in contact with the source region, a ... | 02/28/2006 |
| 6965131 | Thyristor switch with turn-off current shunt, and operating method A semiconductor switch includes a thyristor and a current shunt, preferably a transistor in parallel with and controlled by the thyristor, which shunts thyristor current at turn-off. The thyristor includes a portion of a drift layer, with a p-n junction formed below... | 11/15/2005 |
| 6956239 | Transistors having buried p-type layers beneath the source region The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between the source and the drain and on an n-type conductivity channel layer... | 10/18/2005 |
| 6936866 | Semiconductor component A vertical or lateral semiconductor component derives a signal from a high load voltage. This signal can be used directly for driving the semiconductor component or, alternatively, a control device. ... | 08/30/2005 |
| 6933541 | Emitter turn-off thyristors (ETO) A family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor an and off. In a first embodiment of the present invention a family of thyristors are disclosed all of which comprise a pair of MOS transistors, the first of whic... | 08/23/2005 |
| 6927442 | Charge pump device A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and ... | 08/09/2005 |
| 6921939 | Power MOSFET and method for forming same using a self-aligned body implant A method for making a power MOSFET includes forming a trench in a semiconductor layer, forming a gate dielectric layer lining the trench, forming a gate conducting layer in a lower portion of the trench, and forming a dielectric layer to fill an upper portion of the... | 07/26/2005 |
| 6917060 | Lateral semiconductor device and vertical semiconductor device A vertical semiconductor device including a first conductivity type base layer having resistance higher then of a first conductivity type buffer layer, the first conductivity type buffer layer formed in one surface portion of the first conductivity type base layer, ... | 07/12/2005 |
