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Vladimir Zworykin, television pioneer ; Talking about an invention in which he played a critical role.
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| Number | Title | Issue Date |
| 6627949 | High voltage power MOSFET having low on-resistance A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift re... | 09/30/2003 |
| 6620653 | Semiconductor device and method of manufacturing the same A negative buffer layer and a positive collector layer are formed on a side of one surface of a semiconductor substrate. The positive collector layer is set to have a low dose amount and set shallow so that a low injection efficiency emitter structure is ... | 09/16/2003 |
| 6621120 | Semiconductor device A semiconductor device constituting an IGBT exhibits low losses yet can be manufactured using an inexpensive wafer and with high yields, and exhibits low losses. The IGBT is produced by using a wafer, for example an FZ wafer, that is cut form an ingot and... | 09/16/2003 |
| 6614073 | SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPPOSITE LATERAL FACES A semiconductor chip provided, at a lateral face thereof, with an electrode for external electric connection. Where a semiconductor chip has a plurality of electrodes, all the electrodes are preferably formed at one or more lateral faces of the semiconduc... | 09/02/2003 |
| 6605830 | Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein A power semiconductor device including first and second assembly units. The first assembly of units includes a first semiconductor region of a second conductivity type selectively formed in a first main surface of the first semiconductor layer, a second s... | 08/12/2003 |
| 6605493 | Silicon controlled rectifier ESD structures with trench isolation A novel device structure and process are described for an SCR ESD protection device used with shallow trench isolation structures. The invention incorporates polysilicon gates bridging SCR diode junction elements and also bridging between SCR elements and... | 08/12/2003 |
| 6583452 | Thyristor-based device having extended capacitive coupling A thyristor-based semiconductor device has a thyristor that exhibits increased capacitive coupling between a conductive structure and a portion of a thyristor. According to an example embodiment of the present invention, the thyristor-based semiconductor ... | 06/24/2003 |
| 6580100 | Voltage-controlled vertical bidirectional monolithic switch A vertical voltage-controlled bidirectional monolithic switch formed between the upper and lower surfaces of a semiconductor substrate surrounded with a peripheral wall, including: a first multiple-cell vertical IGBT transistor extending between a cathode... | 06/17/2003 |
| 6576936 | Bipolar transistor with an insulated gate electrode An IGBT is specified which can be produced in a simple manner yet can be turned on homogeneously. For this purpose, gate fingers are dispensed with and the gate current in the IGBT-Chip is forwarded, proceeding from the gate terminal, directly via the pol... | 06/10/2003 |
| 6566691 | Semiconductor device with trench gate having structure to promote conductivity modulation An IGBT has a p-emitter layer and p-base layer, which are arranged on both sides of an n-base layer. A pair of main trenches are formed to extend through the p-base layer and reach the n-base layer. In a current path region interposed between the main tre... | 05/20/2003 |
| 6563170 | Insulated gate bipolar transistor An insulated gate bipolar transistor (IGBT) and a method for manufacturing the same is provided. This method is capable of preventing a latch-up and improving a short current characteristic. In the IGBT, a second conductive type semiconductor layer is for... | 05/13/2003 |
| 6541801 | Triac with a holding voltage that is greater than the dc bias voltages that are on the to-be-protected nodes The holding voltage (the minimum voltage required for operation) of a triac is increased to a value that is greater than a dc bias on to-be-protected nodes. The holding voltage is increased by inserting a voltage drop between each p+ region and a to-be-pr... | 04/01/2003 |
| 6528826 | Depletion type MOS semiconductor device and MOS power IC A depletion type MOS semiconductor device is provided which includes a p- well region formed in a surface layer of an n- drift layer, an n+ emitter region formed in a surface layer of the p31 well region, an n | 03/04/2003 |
| 6512274 | CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same An n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits negative differential resistance in its output characteristic (drain current as a function of drain voltage) is disclosed. For a fixed gate voltage, the MISFET chann... | 01/28/2003 |
| 6501137 | Electrostatic discharge protection circuit triggered by PNP bipolar action An electrostatic discharge protection circuit, comprising a semiconductor-controlled rectifier and a PMOS device. The semiconductor-controlled rectifier, coupled between two nodes, has an N-type semiconductor layer. The PMOS device, integrated with the ... | 12/31/2002 |
| 6492662 | T-RAM structure having dual vertical devices and method for fabricating the same A T-RAM array having a plurality of T-RAM cells is presented where each T-RAM cell has dual vertical devices. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surface of each thyristor is coplanar with the top surface of each... | 12/10/2002 |
| 6476429 | Semiconductor device with breakdown voltage improved by hetero region A power MOSFET includes an n- -drain layer, a drain contact layer disposed on a first side of the drain layer, a p-type base layer disposed on a second side of the drain layer, and an n-source layer disposed on the base layer. A gate electrode ... | 11/05/2002 |
| 6465283 | Structure and fabrication method using latch-up implantation for improving latch-up immunity in CMOS fabrication process A structure and fabrication method using latch-up implantation to improve latch-up immunity in CMOS circuit. The impedance of parasitic SCR conducting path is raised by performing an ion-implantation process on a cathode and an anode of a parasitic SCR wh... | 10/15/2002 |
| 6459101 | Semiconductor device A semiconductor device is provided which relieves the concentration of electric fields generated at a corner part and the like even, if the integration degree of the device is improved, and thus easily improves a current driving performance by improving t... | 10/01/2002 |
| 6455869 | Motorcycle wheel lift A vehicle wheel lift includes a base, a substantially upright member, a linear actuator, and a lift arm. The linear actuator is coupled to the upright member, which is attached to and extends from the base. The lift arm is pivotally coupled to the upright... | 09/24/2002 |
| 6448587 | Circuit incorporated IGBT and power conversion device using the same A circuit incorporated IGBT is provided with a semiconductor substrate having an IGBT area and a circuit area which are adjacent to each other. In a semiconductor layer of one conductivity type in which a circuit element is formed in the circuit area, the... | 09/10/2002 |
| 6448586 | Semiconductor current-switching device having operational enhancer and method therefor A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment, the NDR device is used as a thin vertical PNPN structure wit... | 09/10/2002 |
| 6441407 | Gate controlled thyristor driven with low-inductance A semiconductor component including a housing for a semiconductor substrate, an anode, a cathode, an annular gate electrode flange, which laterally protrudes from the housing and concentrically surrounds the housing, and an annular auxiliary cathode flang... | 08/27/2002 |
| 6423986 | Field-controlled high-power semiconductor devices Power semiconductor devices have a plurality of semiconductor layers of alternating p-type and n-type conductivity and top and bottom device surfaces. The top semiconductor layer forms a control layer (60). A semiconductor layer junction, remote from both... | 07/23/2002 |
| 6410950 | Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode A pin diode includes an inner zone, a cathode zone and an anode zone. A boundary surface between the inner zone and the anode zone is at least partly curved and/or at least one floating region having the same conduction type and a higher dopant concentrat... | 06/25/2002 |
| 6407413 | Semiconductor device with guard ring and Zener diode layer thereover A semiconductor device includes a polysilicon diode layer formed so that pn junctions are positioned only in a portion (first portion) of the polysilicon diode layer which overlies at least one guard ring having a field alleviating structure for holding t... | 06/18/2002 |
| 6396084 | Structure of semiconductor rectifier A semiconductor rectifier includes a substrate of a first conductivity type; a current path layer of the first conductivity type formed near the surface of the substrate; a current block layer of a second conductivity type laterally enclosing the current ... | 05/28/2002 |
| 6380566 | Semiconductor device having FET structure with high breakdown voltage An N-MOSFET is formed on an SOI substrate consisting of a semiconductor substrate, an insulating layer and an n- -active layer. A p-well layer, an n-RESURF layer, and an n-diffusion layer are formed in the surface of the n- -active l... | 04/30/2002 |
| 6365932 | Power MOS transistor A new and improved power MOS transistor having a protective diode with an increased breakdown voltage difference and less sheet resistivity is disclosed. In an up-drain type MOSFET, an n-type well layer has its top surface in which an elongated p-type bas... | 04/02/2002 |
| 6355513 | Asymmetric depletion region for normally off JFET A semiconductor device efficiently providing the DC currents required in both discrete and integrated circuits operated at low DC supply voltages. The device disclosed in the present invention is an asymmetrical, enhancement mode, Junction Field Effect Tr... | 03/12/2002 |
| 6323143 | Method for making silicon nitride-oxide ultra-thin gate insulating layers for submicrometer field effect transistors A method for making an improved ultra-thin silicon nitride-oxide gate insulating layer for field effect transistors (FETs) is achieved. After forming a field oxide to electrically isolate device areas on a silicon substrate, an ultra-thin silicon nitride-... | 11/27/2001 |
| 6278140 | Insulated gate thyristor An insulated gate thyristor is provided which includes: a first-conductivity-type base layer, first and second-conductivity-type base regions formed in the base layer, a first-conductivity-type source region formed in the first base region, a first-conduc... | 08/21/2001 |
| 6255672 | Semiconductor device A semiconductor device includes a pair of semiconductor switching elements and a board. Each semiconductor switching element has positive and control electrodes formed on one surface and a negative electrode formed on the other surface. The positive and c... | 07/03/2001 |
| 6252259 | Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is uniform in accordance with a predetermined distribution of the carrier life time. Thus, turn OFF characteristics of a semico... | 06/26/2001 |
| 6252258 | High power rectifier A high power rectifier device has an - drift layer on an N+ layer. A number of trench structures are recessed into the drift layer opposite the N+ layer; respective mesa regions separate each pair of trenches. Each trench structure includes oxide side-wal... | 06/26/2001 |
| 6236068 | Transistor component A transistor component and a method of producing the transistor component having at least one insulated-gate electrode and with lateral and vertical current flow. The transistor component is used for low-loss switching of high currents and is optionally d... | 05/22/2001 |
| 6229161 | Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment, the NDR device is used as a thin vertical PNPN structure wit... | 05/08/2001 |
| 6225649 | Insulated-gate bipolar semiconductor device An insulated-gate bipolar semiconductor device is provided wherein electric resistance generated in an emitter impurity region and between an emitter electrode and a region in the close vicinity of a gate takes a prescribe value irrespective of the distan... | 05/01/2001 |
| 6222232 | Asymmetric MOS technology power device A MOS technology power device comprises a semiconductor substrate, a semiconductor layer of a first conductivity type superimposed over the semiconductor substrate, an insulated gate layer covering the semiconductor layer, a plurality of substantially rec... | 04/24/2001 |
| 6218709 | Semiconductor device and semiconductor circuit using the same An inexpensive semiconductor device in which an insulated gate bipolar transistor and a terminal, capable of drawing out a limited current or voltage from a collector of the insulated gate bipolar transistor, are mounted on a semiconductor substrate, and ... | 04/17/2001 |
