Quotables
"It is my heart-warmed and world-embracing Christmas hope and aspiration that all of us, the high, the low, the rich, the poor, the admired, the despised, the loved, the hated, the civilized, the savage (every man and brother of us all throughout the whole earth), may eventually be gathered together in a heaven of everlasting rest and peace and bliss, except the inventor of the telephone. "
Mark Twain ; Christmas greetings, 1890
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| Number | Title | Issue Date |
| 7488992 | Electronic device comprising enhancement mode pHEMT devices, depletion mode pHEMT devices, and power pHEMT devices on a single substrate and method of creation The present invention comprises an integrated circuit fabricated on a single substrate where the integrated circuit comprises a first block comprising an enhancement mode pHEMT transistor on a substrate; a second block comprising a depletion mode pHEMT transistor on... | 02/10/2009 |
| 7332750 | Power semiconductor device with improved unclamped inductive switching capability and process for forming same A power semiconductor device having high avalanche capability comprises an N+ doped substrate and, in sequence, N− doped, P− doped, and P+ doped semiconductor layers, the P− and P+ doped layers ... | 02/19/2008 |
| 7301167 | Organic light emitting devices and electroluminescent display panel applying the same Organic light emitting devices include an anode, a cathode and a plurality of organic light emitting units. The adjacent organic light emitting units are separated by a charge transfer layer formed of various fullerenes in combination. The charge transfer layer may ... | 11/27/2007 |
| 7295412 | Protection circuit for power management semiconductor devices and power converter having the protection circuit A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the pow... | 11/13/2007 |
| 7285824 | Semiconductor device having a lateral diode structure A semiconductor device comprises: a semiconductor layer of a first conductivity type; a first semiconductor region of a second conductivity type provided on the semiconductor layer, the first semiconductor region being one of an anode region and a cathode region; a ... | 10/23/2007 |
| 7262442 | Triac operating in quadrants Q1 and Q4 A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into a first and a second well portion, the first portion being connected t... | 08/28/2007 |
| 7259407 | Isolated HF-control SCR switch A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via integrated capacitors to corresponding areas. In the case of a thyristor, h... | 08/21/2007 |
| 7242037 | Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices An electronic power device comprising a single crystal silicon segment being characterized in that the segment comprises a non-uniform distribution of minority carrier recombination centers, the minority carrier recombination centers comprising a substitutional meta... | 07/10/2007 |
| 7183193 | Integrated device technology using a buried power buss for major device and circuit advantages A method for providing an improved integrated circuit device is disclosed. The method comprises the steps of providing active and passive areas in the substrate, providing a plurality of slots in the substrate after providing the active and passive areas, and oxidiz... | 02/27/2007 |
| 7126204 | Integrated semiconductor circuit with an electrically programmable switching element The invention relates to a semiconductor circuit (20) having an electrically programmable switching element (10), an “antifuse”, which includes a substrate electrode (2), produced in a substrate (1) which can be electrically biased wi... | 10/24/2006 |
| 7109567 | Semiconductor device and method of manufacturing such device The invention relates to a semiconductor device with a heterojunction bipolar, in particular npn, transistor with an emitter region (1), a base region (2), and a collector region (3), which are provided with respectively a first, a second, and a... | 09/19/2006 |
| 7064359 | Switching semiconductor device and switching circuit A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the ... | 06/20/2006 |
| 7042026 | Power switching device A power switching device comprises a semiconductor substrate; a plurality of cells, each of which switches a current from a power supply to a load on the basis of a potential at a gate electrode, said cells being arranged on said semiconductor substrate to form a ce... | 05/09/2006 |
| 7037789 | Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench A method for manufacturing a semiconductor device includes: forming a trench in a predetermined layer of a semiconductor substrate; heating the substrate having the trench in a non-oxidizing and non-nitridizing atmosphere containing a dopant or a compound that inclu... | 05/02/2006 |
| 6998656 | Transparent double-injection field-effect transistor A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent a... | 02/14/2006 |
| 6965129 | Thyristor-based device having dual control ports Switching operations, such as those used in memory devices, are enhanced using a thyristor-based semiconductor device adapted to switch between a blocking state and a conducting state. According to an example embodiment of the present invention, a thyristor-based se... | 11/15/2005 |
| 6943406 | Semiconductor device According to the present invention, there is provided a semiconductor device having, a semiconductor substrate having a surface on which an insulating layer is formed, a first-conductivity-type first semiconductor layer formed on the insulating layer and having a fi... | 09/13/2005 |
| 6930011 | Semiconductor device with a bipolar transistor, and method of manufacturing such a device A semiconductor device includes a preferably discrete bipolar transistor with a collector region, a base region, and an emitter region which are provided with connection conductors. A known means of preventing a saturation of the transistor is that the latter is pro... | 08/16/2005 |
| 6924177 | Method for producing a thyristor A thyristor having a first zone, a second zone, a third zone, and a fourth zone. At least one control electrode is connected to the second and/or third zone. In order to reduce the static and dynamic power loss in a symmetrical thyristor, it is proposed that a field... | 08/02/2005 |
| 6906356 | High voltage switch A high power switch includes diode and BJT structures interdigitated in a drift layer and separated by insulated trench gates; electrodes contacting the diode and BJT structures provide anode and cathode connections. Shallow N+ regions extend below and around the co... | 06/14/2005 |
| 6903374 | Structure of p-electrode at the light-emerging side of light-emitting diode A structure of a p-electrode formed at the light-emerging side of an LED that comprises (a) an n-type semiconductor substrate, (b) an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type contact layer formed on the substrate in this order, a... | 06/07/2005 |
| 6828690 | Non-uniform minority carrier lifetime distributions in high performance silicon power devices A process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, ... | 12/07/2004 |
| 6815733 | Switching element and method of making the same The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first ... | 11/09/2004 |
| 6809387 | Power switching device A power switching device comprises a semiconductor substrate; a plurality of cells, each of which switches a current from a power supply to a load on the basis of a potential at a gate electrode, said cells being arranged on said semiconductor substrate to form a ce... | 10/26/2004 |
| 6707128 | Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode A semiconductor device comprises a first semiconductor layer of a first conductivity type provided on a semiconductor substrate of the first conductivity type, a base layer of a second conductivity type provided in the first semiconductor layer, for defining a verti... | 03/16/2004 |
| 6593600 | Responsive bidirectional static switch A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an au... | 07/15/2003 |
| 6576925 | Thin film transistor, liquid crystal display panel, and manufacturing method of thin film transistor The present invention relates to minimizing a leakage current in a floating island region formed in a thin film transistor, and to maintaining a large ON-current required for an operation of the TFT. More specifically, the present invention is directed to... | 06/10/2003 |
| 6555849 | Deactivatable thyristor A thyristor includes a semiconductor body having a first emitter layer and a first base layer on an anode side, a second base layer and a second emitter layer on a cathode side, a cathode contact, and an electrically insulating insulation layer having ope... | 04/29/2003 |
| 6326648 | Power switch with a controlled DI/DT A monolithic power switch with a controlled di/dt including the parallel assembly of a MOS or IGBT type component with a thyristor type component, including means for inhibiting the thyristor type component during the closing phase of the switch, which is... | 12/04/2001 |
| 5998813 | Component for protecting telephone line interfaces A monolithic component for protection against over-currents liable to occur on a line in series with which is connected a detection resistor, comprises a first cathode-gate thyristor associated with an avalanche diode and a second anode-gate thyristor of ... | 12/07/1999 |
| 5773868 | Semiconductor device and method of manufacturing the same A semiconductor device having a dielectric isolation (DI) structure using an SOI substrate or the like. An active region as a main current path of the semiconductor device is sandwiched between DI grooves having a side wall substantially vertical to the m... | 06/30/1998 |
| 5541430 | VDMOS semiconductor device In a semiconductor device having a low ON resistance, an n- -type epitaxial layer (1) is formed on an upper surface of an n+ -type substrate (8) and p-type diffusion regions (2) are selectively formed on its upper surface, while n-ty... | 07/30/1996 |
| 5479031 | Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value An overvoltage protection device having multiple shorting dots in the emitter region and multiple buried regions substantially aligned with these shorting dots. The placement, number, and area of these buried regions reduce and more accurately set the ove... | 12/26/1995 |
| 5426314 | Insulated gate control static induction thyristor A static induction thyristor has a first semiconductor area having a high impurity concentration of a first conductivity type. A second semiconductor area having low impurity concentration is formed adjacent to the first semiconductor area. A third semico... | 06/20/1995 |
| 5369291 | Voltage controlled thyristor A voltage controlled thyristor includes an intrinsic layer of material between an anode and a cathode and a gate region between the intrinsic layer and the cathode comprising a lightly doped P type layer with more heavily doped P type regions extending th... | 11/29/1994 |
| 5360990 | P/N junction device having porous emitter In a semiconductor P/N junction device, a porous emitter is provided which has high saturation current to limit injected charge when the device is conducting. The porous emitter includes a lightly doped region abutting a contact on the surface of the devi... | 11/01/1994 |
| 5336907 | MOS gate controlled thyristor having improved turn on/turn off characteristics A gate electrode includes a first region formed in an OFF gate region and a second region formed in an ON gate region. A P-channel region is formed in the OFF gate region and an N-channel region is formed in the ON gate region to separate these gate regio... | 08/09/1994 |
| 5309002 | Semiconductor device with protruding portion Between electrodes (9) and (10) are formed a p+ substrate (2), an n- epitaxial layer (1) having a protruding portion (3), an n+ diffusion region (4) and p+ diffusion regions (13). Control electrodes (6) are form... | 05/03/1994 |
| 5155569 | Thyristor device with improved turn-off characteristics A thyristor structure comprises a p+ -type substrate (21), an n-type base layer (22), a first p-type diffusion region (23) and an n+ -type diffusion region (25). A MOS structure comprises the base layer (22), first and second p-type ... | 10/13/1992 |
| 4977438 | Turn-off semiconductor component and use thereof A semiconductor device which can be turned off via a first gate arranged at the cathode side including, a second gate structure comparable to the structure of the first gate arranged at the anode side. During the turning off, the charge carriers can be mo... | 12/11/1990 |
