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An armor with rollers is provided that enables a user to move in all positions by rolling on a hard and smooth surface while constantly varying his bearing points on the ground.
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| Number | Title | Issue Date |
| 7812367 | Two terminal low capacitance multi-channel ESD device In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. ... | 10/12/2010 |
| 7728349 | Low capacitance SCR with trigger element A silicon rectifier semiconductor device with selectable trigger and holding voltages includes a trigger element. A first well region of a first conductivity type formed within a semiconductor body. A first region of the first conductivity type is formed within the ... | 06/01/2010 |
| 7521730 | Thyristor arrangement with turnoff protection A thyristor arrangement includes a main thyristor, at least one auxiliary thyristor, a resistance device which electrically connects the auxiliary thyristor and the main thyristor to one another, and an optical triggering device for breakover triggering of the main ... | 04/21/2009 |
| 7518164 | Current-triggered low turn-on voltage SCR A system for protecting a high-speed input/output pad of an integrated circuit. The system includes a preferably parasitic silicon controlled rectifier (SCR) and a triggering mechanism that preferably includes an NMOS triggering FET. The SCR includes an anode connec... | 04/14/2009 |
| 7372681 | Electrostatic discharge (ESD) protection device with simultaneous and distributed self-biasing for multi-finger turn-on An electrostatic discharge (ESD) protection circuit for a semiconductor integrated circuit (IC) that protects core circuitry of the IC during normal operations, and shunts ESD events during non-powered mode of the IC. The ESD protection circuitry includes a multi-fi... | 05/13/2008 |
| 7332748 | Electro-static discharge protection device An electro-static discharge protection device includes a first conductive type well and a second conductive type well which are formed in a surface of the first conductive type layer or a first conductive type substrate. A first high concentration second conductive ... | 02/19/2008 |
| 7309905 | Bipolar-based SCR for electrostatic discharge protection A system and method is disclosed for implementing a new bipolar-based silicon controlled rectifier (SCR) circuit for an electrostatic discharge (ESD) protection. The SCR circuit comprises a bipolar device to be formed on a semiconductor substrate. The bipolar device... | 12/18/2007 |
| 7230329 | Semiconductor device, electronic device, electronic equipment, method of manufacturing semiconductor device, and method of manufacturing electronic device A method is provided to realize a three-dimensional mounting structure of different types of packages. By bonding protruding electrodes onto lands, which are formed on a first carrier substrate, second and third carrier substrates are mounted on the first carrier su... | 06/12/2007 |
| 7205582 | Telecommunications switch array with thyristor addressing An apparatus for switching microwave signals includes a plurality of input lines, a plurality of output lines; and a plurality of thyristor. Each thyristor has a lower conducting surface that is electrically connected to one of the input lines and an upper conductin... | 04/17/2007 |
| RE39445 | Solar cell and solar cell unit The solar cell of the present invention includes a titanium dioxide semiconductor that is held between a pair of electrodes so that the titanium dioxide semiconductor and at least one of the electrodes form a rectification barrier. ... | 12/26/2006 |
| 7141484 | Electrostatic discharge protection circuit of non-gated diode and fabrication method thereof A non-gated diode structure of a silicon-on-insulator, having a silicon-on-insulator substrate, a pair of isolating structures, a first type doped region and a second type doped region. The silicon-on-insulation substrate has a stack of a substrate, an insulation la... | 11/28/2006 |
| 7141831 | Snapback clamp having low triggering voltage for ESD protection An SCR device having a first P type region disposed in a semiconductor body and electrically connected to anode terminal of the device. At least one N type region is also disposed in the body adjacent the first P type region so as to form a PN junction having a widt... | 11/28/2006 |
| 7098717 | Gate triggered ESD clamp The clamp circuit of the present invention comprises a low voltage, thin oxide MOS transistor and a trigger element comprising a timing element and at least one inverter. The source and drain of the MOS transistor are connected between a first node and a second node... | 08/29/2006 |
| 7092227 | Electrostatic discharge protection circuit with active device An electrostatic discharge protection circuit includes a first terminal, a second terminal, an electrostatic discharge device coupled between the first and second terminals, and an active device coupled to the electrostatic discharge device and controlling an electr... | 08/15/2006 |
| 7023029 | Complementary vertical SCRs for SOI and triple well processes In an ESD protection device using a SCR-like structure, a vertical device is provided that is highly robust and easily allows the triggering voltage to be adjusted during manufacture. Furthermore it is implementable in complementary form based on PNP and NPN BJT str... | 04/04/2006 |
| 7023028 | Protection structure for protection from electrostatic discharge and integrated circuit An ESD protection structure for protecting an integrated circuit from electrostatic discharge, having a bipolar protection element, whose emitter is formed by an emitter zone of the first conduction type, whose collector is formed by a buried layer of the first cond... | 04/04/2006 |
| 6979908 | Input/output architecture for integrated circuits with efficient positioning of integrated circuit elements A described embodiment of the present invention includes an integrated circuit having a plurality of I/O modules. The I/O modules include a bond pad formed on a substrate. The I/O modules also include an electrostatic discharge device formed in the substrate. The el... | 12/27/2005 |
| 6960792 | Bi-directional silicon controlled rectifier structure with high holding voltage for latchup prevention A bi-directional silicon controlled rectifier structure provides electrostatic discharge (ESD) protection against both positive and negative voltage spikes. The structure utilizes a pair of wells, n+ and p+ regions formed in both wells, a first ring formed around th... | 11/01/2005 |
| 6936907 | Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity This invention provides a method or an auxiliary method to implement optimum variation lateral flux on a semiconductor surface. The method is to cover one or more thin films of high permittivity dielectric material on the semiconductor surface. The one or more films... | 08/30/2005 |
| 6933540 | ESD protection apparatus and method for dual-polarity input pad An ESD protection apparatus for dual-polarity input pad comprises a triple-well formed with a first, second and third regions to form an SCR structure. A first and second ground connection regions of opposite conductivity types are formed on the first region, a firs... | 08/23/2005 |
| 6919587 | Low-capacitance bidirectional protection device A low-capacitance bidirectional device of protection against overvoltages, intended to be used at high frequencies, including first and second discrete one-way Shockley diodes, the cathode and the anode of the first diode being respectively connected to the anode an... | 07/19/2005 |
| 6914306 | Electrostatic discharge protection device An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate, a first and a second doped region formed in the substrate. The first and second doped regions are separated from each other by only the substrate region. ... | 07/05/2005 |
| 6825504 | Semiconductor integrated circuit device and method of manufacturing the same In order to eliminate the difference in ESD resistance caused by polarities of excessive voltages applied to an external terminal and enhance ESD resistance of a semiconductor integrated circuit device to both the positive and negative overvoltages, a protection ele... | 11/30/2004 |
| 6777721 | SCR device for ESD protection The present invention provides a novel ESD structure for protecting an integrated circuit (IC) from ESD damage and a method of fabricating the ESD structure on a semiconductor substrate. The ESD structure of the present invention has lower trigger voltage and lower ... | 08/17/2004 |
| 6765290 | Arrangement for back-biasing multiple integrated circuit substrates at maximum supply voltage among all circuits A diode coupling-based arrangement back-biases each of the semiconductor substrates of a plurality of integrated circuits at the maximum (e.g., most negative) DC voltage applied to any individual circuit, irrespective of a potential variation in applied DC voltages.... | 07/20/2004 |
| 6727526 | Thyristor with recovery time voltage surge resistance A preferably asymetrical thyristor (1) with at least one driver stage (20) for amplifying a control current (I) fed into the cathodal base (16) of the thyristor, in which, in the driver stage, the transistor gain factors αnpn and α | 04/27/2004 |
| 6683361 | Solar cell and solar cell unit The solar cell of the present invention includes a titanium dioxide semiconductor that is held between a pair of electrodes so that the titanium dioxide semiconductor and at least one of the electrodes form a rectification barrier.... | 01/27/2004 |
| 6639253 | Overvoltage protection device A semiconductor overvoltage protection device in the form of a four layer diode has first and third layers of a first conductivity semiconductor material, second and fourth layers of a second conductivity type semiconductor material and a first buried reg... | 10/28/2003 |
| 6590261 | Electrostatic discharge protection structure An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure of the present invention uses a resistance capacitance (RC) circuit to distinguish an overshoot phenomenon caused by the instantaneous power-on from an ESD ev... | 07/08/2003 |
| 6541824 | Modified source side inserted anti-type diffusion ESD protection device An ESD protection circuit that will prevent internal circuits of an integrated circuit is formed on a semiconductor substrate to prevent damage during extreme voltage levels from an ESD voltage source and is connected to an input/output pad. A plurality o... | 04/01/2003 |
| 6373079 | Thyristor with breakdown region The thyristor is based on a semiconductor body with an anode-side base zone of the first conductivity type and one or more cathode-side base zones of the opposite, second conductivity type. Anode-side and cathode-side emitter zones are provided, and at le... | 04/16/2002 |
| 6310365 | Surface voltage sustaining structure for semiconductor devices having floating voltage terminal A surface voltage sustaining structure for semiconductor device which includes at least one high-side high-voltage device, comprises at least two surface voltage sustaining regions, wherein a first surface voltage sustaining region is for sustaining a vol... | 10/30/2001 |
| 6303964 | Circuit device for protection against electrostatic discharge, immune to the latch-up phenomenon The present invention relates to a circuit device for protection against electrostatic discharge, and being immune to the latch-up phenomenon. The circuit device is of the integrated type in a portion of a semiconductor integrated circuit. The device incl... | 10/16/2001 |
| 6274910 | ESD protection circuit for SOI technology An ESD protection circuit is fabricated on a semiconductor block on an insulating layer overlying a supporting substrate. The ESD protection circuit comprises a first N-type doped region, a first P-type doped region, a second N-type doped region and a sec... | 08/14/2001 |
| 6252256 | Overvoltage protection circuit A design for an overvoltage protection circuit can be used to fabricate several different circuits incorporating different protection techniques. The design is suitable for use in a single device, which can be easily and inexpensively packaged and protect... | 06/26/2001 |
| 6097071 | ESD protection clamp for mixed voltage I/O stages using NMOS transistors An electrostatic discharge protection device for protecting a mixed voltage integrated circuit against damage is provided which includes at least on pair of NMOS transistors connected in a cascode configuration. Each NMOS transistor pair includes a first ... | 08/01/2000 |
| 6015992 | Bistable SCR-like switch for ESD protection of silicon-on-insulator integrated circuits A bistable SCR-like switch (41) protects a signal line (65) of an SOI integrated circuit (40) against damage from ESD events. The bistable SCR-like switch (41) is provided by a first and a second transistors (42 and 44) which are formed upon the insulator... | 01/18/2000 |
| 5986289 | Surface breakdown bidirectional breakover protection component The present invention relates to a bidirectional breakover component including a lightly-doped N-type substrate, an upper P-type region extending over practically the entire upper surface of the component except its circumference, a lower P-type uniform l... | 11/16/1999 |
| 5880488 | Segmented silicon-control-rectifier (SCR) electrostatic discharge (ESD) protection circuit A segmented SCR ESD protection circuit for discharging an external electrostatic stress on a semiconductor integrated circuit is formed over a semiconductor substrate. The protection circuit includes an SCR device and a number of resistors. The SCR device... | 03/09/1999 |
| 5767537 | Capacitively triggered silicon controlled rectifier circuit An SCR circuit formed on a semiconductor substrate includes a well region, a first diffusion region and a second diffusion region in the well region, and a third diffusion region in the substrate. The SCR circuit also includes a capacitor connected betwee... | 06/16/1998 |
