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| Number | Title | Issue Date |
| 8030638 | Quasi single crystal nitride semiconductor layer grown over polycrystalline SiC substrate A compound semiconductor device is manufactured by using a polycrystalline SiC substrate, the compound semiconductor device having a buffer layer being formed on the substrate and having a high thermal conductivity of SiC and aligned orientations of crystal axes. Th... | 10/04/2011 |
| 7968864 | Group-III nitride light-emitting device A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelengt... | 06/28/2011 |
| 7968865 | Boron aluminum nitride diamond heterostructure A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1. ... | 06/28/2011 |
| 7943924 | Indium gallium nitride-based Ohmic contact layers for gallium nitride-based devices Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided d... | 05/17/2011 |
| 7935955 | Group III nitride semiconductor multilayer structure An object of the present invention is to provide a Group III nitride semiconductor multilayer structure having a smooth surface and exhibiting excellent crystallinity, which multilayer structure employs a low-cost substrate that can be easily processed. Another obje... | 05/03/2011 |
| 7737429 | Nitride based semiconductor device using nanorods and process for preparing the same Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorod... | 06/15/2010 |
| 7714316 | Method of manufacturing semiconductor device, acid etching resistance material and copolymer Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydro... | 05/11/2010 |
| 7576351 | Nitride semiconductor light generating device A nitride semiconductor light generating device comprises an n-type gallium nitride based semiconductor layer, a quantum well active layer including an InX1AlY1Ga1-X1-Y1N (1>X1>0, 1>Y1>0) well layer and an InX2AlY2 | 08/18/2009 |
| 7547908 | III-nitride light emitting devices grown on templates to reduce strain In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve th... | 06/16/2009 |
| 7432521 | Logical operation element field emission emitter and logical operation circuit A logical operation element and logical operation circuit are provided that are capable of high speed and a high degree of integration. A logical operation circuit has a construction wherein, in a logical operation element, the anodes of first and second fiel... | 10/07/2008 |
| 7420261 | Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to... | 09/02/2008 |
| 7399692 | III-nitride semiconductor fabrication A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes. ... | 07/15/2008 |
| 7394092 | Quasi-particle interferometry for logical gates A quantum computer can only function stably if it can execute gates with extreme accuracy. “Topological protection” is a road to such accuracies. Quasi-particle interferometry is a tool for constructing topologically protected gates. Assuming the corrections of ... | 07/01/2008 |
| 7378680 | Migration enhanced epitaxy fabrication of quantum wells Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum we... | 05/27/2008 |
| 7372081 | Nitride light emitting device and manufacturing method thereof A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the mu... | 05/13/2008 |
| 7364929 | Nitride semiconductor based light-emitting device and manufacturing method thereof An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conducti... | 04/29/2008 |
| 7365356 | Photocathode The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrat... | 04/29/2008 |
| 7338826 | Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN b... | 03/04/2008 |
| 7335519 | Method for manufacturing a light-emitting diode A method for manufacturing a light-emitting diode (LED) is disclosed. In the method, a substrate is firstly provided, in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a tr... | 02/26/2008 |
| 7326953 | Layer sequence for Gunn diode The invention relates to a layered construction for a Gunn diode. The layered construction comprises a series of stacked layers consisting of a first highly doped nd GaAs layer (3), a graded AlGaAs layer (5), which is placed upon the first h... | 02/05/2008 |
| 7312472 | Compound semiconductor element based on Group III element nitride In the present invention, (Ti1−xAx)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the m... | 12/25/2007 |
| 7288773 | Electron source, and charged-particle apparatus comprising such an electron source The invention provides an electron source suitable for use in a charged-particle apparatus, in which source a beam of electrons can be extracted from an electrode that is subjected to at least one of an electric potential, thermal excitation and photonic excitation,... | 10/30/2007 |
| 7279369 | Germanium on insulator fabrication via epitaxial germanium bonding A method of forming a germanium-on-insulator (GOI). An epitaxial germanium layer is formed on top of a first substrate. A first dielectric film is formed on top of the epitaxial germanium layer. A second substrate is provided. The first substrate is bonded to the se... | 10/09/2007 |
| 7279697 | Field effect transistor with enhanced insulator structure A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the... | 10/09/2007 |
| 7271404 | Group III-V nitride-based semiconductor substrate and method of making same A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impu... | 09/18/2007 |
| 7268361 | Electron emission device The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5, whereby the field emission cathode 5 comprises a p-type semiconductor region 7 connected to ... | 09/11/2007 |
| 7259406 | Semiconductor optical element A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InG... | 08/21/2007 |
| 7244959 | Detection of electromagnetic radiation using micromechanical multiple quantum wells structures An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar ... | 07/17/2007 |
| 7230285 | Semiconductor device and hetero-junction bipolar transistor In an npn-type HBT, each of an emitter layer and a collector layer is formed of AlGaN and a base layer is formed of GaN. The emitter layer is in contact with a nitrogen polarity surface of the base layer and the collector layer is in contact with a gallium polarity ... | 06/12/2007 |
| 7227173 | Semiconductor devices and methods A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device;... | 06/05/2007 |
| 7227172 | Group-III-element nitride crystal semiconductor device In a Group-III-element nitride semiconductor device including a Group-III-element nitride crystal layer stacked on a Group-III-element nitride crystal substrate, the substrate is produced by allowing nitrogen of nitrogen-containing gas and a Group III element to rea... | 06/05/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semic... | 04/10/2007 |
| 7201471 | MEMS device with movement amplifying actuator A micro-electromechanical liquid ejection device includes a substrate that defines a liquid inlet channel. Drive circuitry is positioned on the substrate. A nozzle chamber structure is positioned on the substrate and defines a nozzle chamber in fluid communication w... | 04/10/2007 |
| 7196347 | Semiconductor light emitting device In a III group nitride compound semiconductor wherein light that has been emitted in a light emitting portion formative layer is reflected by a multilayered reflection layer that is provided between the light emitting portion formative layer and sapphire substrate, ... | 03/27/2007 |
| 7190045 | Semiconductor device and method for fabricating the same A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacito... | 03/13/2007 |
| 7180103 | III-V power field effect transistors A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applicat... | 02/20/2007 |
| 7176479 | Nitride compound semiconductor element A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire substrate; a second single crys... | 02/13/2007 |
| 7170223 | Emitter with dielectric layer having implanted conducting centers An emitter has a dielectric layer formed on a conductor, with a thin metal layer over the dielectric. A plurality of conducting centers is in the dielectric layer to allow electrons to pass through the dielectric from the conductor to the thin metal layer via quantu... | 01/30/2007 |
| 7166874 | Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger ... | 01/23/2007 |
