Quotables
"The abolishment of pain in surgery is a chimera. It is absurd to go on seeking it...knife and pain are two words in surgery that must forever be associated in the consciousness of the patient."
Dr. Alfred Velpeau, French surgeon ; 1839
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8138521 | Thyristor semiconductor device and switching method thereof The objective of this invention is to provide a semiconductor device having a thyristor that can shorten the turn-off time. A first electroconductive type first semiconductor region 20 is formed on a substrate, and a second electroconductive type second semic... | 03/20/2012 |
| 8053807 | Semiconductor packages, stacked semiconductor packages, and methods of manufacturing the semiconductor packages and the stacked semiconductor packages A semiconductor package may include a semiconductor pattern, a bonding pad, and a polymer insulation member. The semiconductor pattern may include a semiconductor device and first hole. The bonding pad may include a wiring pattern and plug. The wiring pattern may be... | 11/08/2011 |
| 7960754 | Diode having high breakdown voltage and low on-resistance A Schottky or PN diode is formed where a first cathode portion is an N epitaxial layer that is relatively lightly doped. An N+ buried layer is formed beneath the cathode for conducting the cathode current to a cathode contact. A more highly doped N-well is formed, a... | 06/14/2011 |
| 7915637 | Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. Thi... | 03/29/2011 |
| 7888701 | Integrated circuit arrangement with Shockley diode or thyristor and method for production and use of a thyristor An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having impro... | 02/15/2011 |
| 7868352 | Silicon break over diode A Break Over Diode (“BOD”) device is a gate-less two terminal high power semiconductor switch in which transitions from a blocking state to a conducting state are triggered by a dV/dt pulse to the anode. The BOD device can be thought of as two cross-coupled PNP ... | 01/11/2011 |
| 7847315 | High efficiency rectifier A high-efficiency power semiconductor rectifier device (10) comprising a δP++ layer (12), a P-body (14), an N-drift region (16), an N+ substrate (18), an anode (20), and a cathode (22). The method of fabricating the ... | 12/07/2010 |
| 7737465 | Semiconductor apparatus and manufacturing method thereof The present invention provides a semiconductor apparatus for improving a switching speed and a withstand voltage, and a manufacturing method of the semiconductor apparatus. The semiconductor apparatus of the invention including a first conductive type semiconductor ... | 06/15/2010 |
| 7679103 | Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having impro... | 03/16/2010 |
| 7622752 | Schottky diode with a vertical barrier A Schottky diode with a vertical barrier extending perpendicularly to the surface of a semiconductor chip having a vertical central metal conductor in contact on the one hand with the substrate of the semiconductor chip with an interposed interface forming a Schottk... | 11/24/2009 |
| 7417265 | Schottky diode structure with enhanced breakdown voltage and method of manufacture In one embodiment, a Schottky diode structure comprises a Schottky barrier layer in contact with a semiconductor material through a Schottky contact opening. A conductive ring is formed adjacent the Schottky contact opening and is separated from the semiconductor ma... | 08/26/2008 |
| 7368760 | Low parasitic capacitance Schottky diode A low parasitic capacitance Schottky diode including a lightly doped polycrystalline silicon island that is formed on a shallow trench isolation (STI) pad such that the polycrystalline silicon island is entirely isolated from an underlying silicon substrate by the S... | 05/06/2008 |
| 7361970 | Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor... | 04/22/2008 |
| 7358127 | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of t... | 04/15/2008 |
| 7355213 | Electrode material and semiconductor element As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent ... | 04/08/2008 |
| 7330369 | NANO-electronic memory array Systems and methods are disclosed to process a semiconductor substrate by fabricating a first layer on the substrate using semiconductor fabrication techniques; fabricating a second layer above the first layer having one or more NANO-bonding areas; self-assemblying ... | 02/12/2008 |
| 7327541 | Operation of dual-directional electrostatic discharge protection device A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semic... | 02/05/2008 |
| 7321138 | Planar diac The invention concerns an asymmetric diac comprising a highly-doped substrate (21) of a first type of conductivity, a lightly-doped epitaxial layer (22) of the second type of conductivity on the upper surface of the substrate (21), a highly-dope... | 01/22/2008 |
| 7309905 | Bipolar-based SCR for electrostatic discharge protection A system and method is disclosed for implementing a new bipolar-based silicon controlled rectifier (SCR) circuit for an electrostatic discharge (ESD) protection. The SCR circuit comprises a bipolar device to be formed on a semiconductor substrate. The bipolar device... | 12/18/2007 |
| 7301241 | Semiconductor device for preventing defective filling of interconnection and cracking of insulating film The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 | 11/27/2007 |
| 7282778 | Chemical sensor using chemically induced electron-hole production at a Schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 10/16/2007 |
| 7279726 | ESD protection device An ESD protection device for protecting a circuit against electrostatic discharges. The ESD protection device having a series circuit of N diodes, each diode comprising an anode and a cathode. The series circuit being connected between two supply potentials. The dio... | 10/09/2007 |
| 7274082 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 09/25/2007 |
| 7260939 | Thermal transfer device and system and method incorporating same A method of manufacturing a thermal transfer device including providing first and second thermally conductive substrates that are substantially atomically flat, providing a patterned electrical barrier having a plurality of closed shapes on the first thermally condu... | 08/28/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7233031 | Vertical power semiconductor component A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the ... | 06/19/2007 |
| 7190006 | Symmetrical planar diac The invention concerns at disc comprising a highly-doped substrate (20) of a first type of conductivity, a lightly-doped epitaxial layer (22) of the second type of conductivity including in the neighbourhood of the substrate (20) a more highly-d... | 03/13/2007 |
| 7170136 | High voltage ESD-protection structure A high voltage ESD-protection structure is used to protect delicate transistor circuits connected to an input or output of an integrated circuit bond pad from destructive high voltage ESD events by conducting at a controlled breakdown voltage that is less than a vol... | 01/30/2007 |
| 7148522 | Thyristor-based SRAM An integrated circuit structure includes a semiconductor substrate and a thyristor formed thereon. The thyristor has at least four layers, with three P-N junctions therebetween. At least two of the layers are formed horizontally and at least two of the layers are fo... | 12/12/2006 |
| 7135718 | Diode device and transistor device A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the ... | 11/14/2006 |
| 7135717 | Semiconductor switches and switching circuits for microwave The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60 GHz. A semiconductor switch according to the present invention utilizes ... | 11/14/2006 |
| 7078296 | Self-aligned trench MOSFETs and methods for making the same Self-aligned trench MOSFETs and methods for manufacturing the same are disclosed. By having a self-aligned structure, the number of MOSFETS per unit area—the cell density—is increased, making the MOSFETs cheaper to produce. The self-aligned structure for the MOS... | 07/18/2006 |
| 7071498 | Gallium nitride material devices including an electrode-defining layer and methods of forming the same Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines ... | 07/04/2006 |
| 7057213 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 06/06/2006 |
| 7042028 | Electrostatic discharge device An electrostatic discharge (ESD) device, which functions like a diode during normal IC operation and like a SCR during an electrostatic discharge event, is provided. To form an equivalent SCR structure, the ESD device includes a plurality of N+ regions and a plurali... | 05/09/2006 |
| 7037814 | Single mask control of doping levels In an integrated circuit, dopant concentration levels are adjusted by making use of a perforated mask. Doping levels for different regions across an integrated circuit can be differently defined by making use of varying size and spacings to the perforations in the m... | 05/02/2006 |
| 7034385 | Topless semiconductor package A semiconductor package which includes a die pad that is exposed through the top surface of its molded housing, a semiconductor die having one power electrode electrically and mechanically connected to the underside of the die pad, and another power electrode electr... | 04/25/2006 |
| 7002187 | Integrated schottky diode using buried power buss structure and method for making same An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an epitaxial layer (EPI) on the substrate region. The diode includes a ... | 02/21/2006 |
| 6965129 | Thyristor-based device having dual control ports Switching operations, such as those used in memory devices, are enhanced using a thyristor-based semiconductor device adapted to switch between a blocking state and a conducting state. According to an example embodiment of the present invention, a thyristor-based se... | 11/15/2005 |
| 6956274 | TiW platinum interconnect and method of making the same A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etch... | 10/18/2005 |
