Celebrity Inventors
Glam girl Heddy Lamar may have used her good looks to good effect on the silver screen, but she put her smarts to better use as an inventor. During World War II, she co-patented a frequency-switching system for torpedo guidance that was considered years ahead of its time.
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| Number | Title | Issue Date |
| 8174046 | Reducing effects of parasitic transistors in thyristor-based memory using local thinning or implanting Method and apparatus for an integrated circuit having memory including thyristor-based memory cells is described. A pair of the thyristor-based memory cells are commonly coupled via a bitline region, where a parasitic bipolar junction transistor is defined therebetw... | 05/08/2012 |
| 8164110 | Integrated lateral high-voltage diode and thyristor The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology... | 04/24/2012 |
| 8134177 | Switching element, semiconductor device and method of manufacturing the same A switching element includes a first electrode having a first surface; a second electrode having a second surface which stands off from the first surface; and a channel region constituted by a plurality of unit channels, each unit channel having opposite ends thereo... | 03/13/2012 |
| 7989841 | Fast injection optical switch A fast injection optical switch is disclosed. The optical switch includes a thyristor having a plurality of layers including an outer doped layer and a switching layer. An area of the thyristor is configured to receive a light beam to be directed through at least on... | 08/02/2011 |
| 7910949 | Power semiconductor device A power semiconductor device includes a conductive board and a switching element mounted on the conductive board and electrically connected thereto. The power semiconductor device also includes an integrated circuit mounted on the conductive board at a distance from... | 03/22/2011 |
| 7893456 | Thyristor-based memory and its method of operation A thyristor-based memory may comprise a thyristor accessible via an access transistor. A temperature dependent bias may be applied to at least one of a supporting substrate and an electrode capacitively-coupled to a base region of the thyristor. The voltage level of... | 02/22/2011 |
| 7875902 | Electro-static discharge protection device An electro-static discharge protection device includes a first conductive type well and a second conductive type well which are formed in a surface of the first conductive type layer or a first conductive type substrate. A first high concentration second conductive ... | 01/25/2011 |
| 7859009 | Integrated lateral high-voltage diode and thyristor The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology... | 12/28/2010 |
| 7804107 | Thyristor semiconductor device and method of manufacture In a method of processing a semiconductor device, a silicide-blocking layer may be formed over a semiconductor material. After defining the silicide-blocking layer, impurities may be implanted into portions of the semiconductor material as defined by the silicide-bl... | 09/28/2010 |
| 7763908 | Design of silicon-controlled rectifier by considering electrostatic discharge robustness in human-body model and charged-device model devices A silicon-controlled rectifier apparatus, comprising a substrate upon which a low-voltage triggered silicon-controlled rectifier is configured. A plurality of triggering components (e.g., NMOS fingers) are formed upon the substrate and integrated with the low-voltag... | 07/27/2010 |
| 7696528 | Thyristor which can be triggered electrically and by radiation A thyristor has a radiation-sensitive breakdown structure (20), a gate electrode (92) that is placed at a distance from the latter in a lateral direction and an ignition stage structure having at least one ignition stage (51, 91) equipped with a... | 04/13/2010 |
| 7667241 | Electrostatic discharge protection device An electrostatic discharge protection device for protecting a node includes a transistor, a silicon controlled rectifier, a second contact region laterally displaced from the first contact region, and a collection region adjacent the source region. The transistor in... | 02/23/2010 |
| 7649212 | Active semiconductor component with a reduced surface area A semiconductor component in which the active junctions extend perpendicularly to the surface of a semiconductor chip substantially across the entire thickness thereof. The contacts with the regions to be connected are provided by conductive fingers substantially cr... | 01/19/2010 |
| 7612387 | Thyristor optimized for a sinusoidal HF control A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type regio... | 11/03/2009 |
| 7592642 | Thyristor-based semiconductor device with indium-carbon implant and method of fabrication A thyristor-based memory device may comprise two base regions of opposite type conductivity formed between a cathode-emitter region and an anode-emitter region. A junction defined between the p-base region and the cathode-emitter region of the thyristor may be “tr... | 09/22/2009 |
| 7589359 | Silicon controlled rectifier A silicon controlled rectifier structure with the symmetrical layout is provided. The N-type doped regions and the P-type doped regions are disposed with the N-well and symmetrically arranged relative to the isolation structure in-between, while the P-type buried la... | 09/15/2009 |
| 7582916 | Silicon controlled rectifier A silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well. The first conductive type well shaped as a polygonal ring surrounds the... | 09/01/2009 |
| 7564072 | Semiconductor device having junction termination extension A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is made up of a first p-type zone formed in an upper portion of the drift... | 07/21/2009 |
| 7554130 | Reducing effects of parasitic transistors in thyristor-based memory using an isolation or damage region An integrated circuit having memory, including thyristor-based memory cells, is described, where each of the thyristor-based memory cells includes a thyristor-based storage element and an access transistor. Where the thyristor-based storage element includes an anode... | 06/30/2009 |
| 7531850 | Semiconductor device including a memory cell with a negative differential resistance (NDR) device A semiconductor device may include at least one memory cell comprising a negative differential resistance (NDR) device and a control gate coupled thereto. The NDR device may include a superlattice including a plurality of stacked groups of layers, with each group of... | 05/12/2009 |
| 7508012 | Electronic component and method for its assembly An electronic component and method for its assembly is disclosed. In one embodiment, the electronic component comprises at least two semiconductor components and a circuit carrier comprising a die pad and a rewiring structure. At least one semiconductor component is... | 03/24/2009 |
| 7443722 | Semiconductor device and driving method therefor A semiconductor device includes a bulk semiconductor substrate, a plurality of storage elements, a bit line, a first voltage being applied to the first region side of the thyristor, and a voltage lower than the first voltage being applied to a word line. The plurali... | 10/28/2008 |
| 7436004 | Semiconductor device An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first semiconductor body, configured and arranged to switch on/off current flowing ... | 10/14/2008 |
| 7436003 | Vertical thyristor for ESD protection and a method of fabricating a vertical thyristor for ESD protection A vertical thyristor for ESD protection comprises an anode (10), a cathode (16), a first gate electrode (12) and a second gate electrode (14). The first (12) and second (14) gate electrodes are arranged between the anode ( | 10/14/2008 |
| 7427787 | Guardringed SCR ESD protection Methods and circuits are disclosed for protecting an electronic circuit from ESD damage using an SCR ESD cell. An SCR circuit is coupled to a terminal of an associated microelectronic circuit for which ESD protection is desired. The SCR used in the ESD cell of the i... | 09/23/2008 |
| 7423299 | Semiconductor devices with a field shaping region A semiconductor device, for example a diode (200), having a pn junction (101) has an insulating material field shaping region (201) adjacent, and possibly bridging, the pn junction. The field shaping region (201) preferably has a high die... | 09/09/2008 |
| 7405434 | Quantum dot conjugates in a sub-micrometer fluidic channel A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of... | 07/29/2008 |
| 7391057 | High voltage silicon carbide devices having bi-directional blocking capabilities High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provi... | 06/24/2008 |
| 7385230 | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped transistor structures inverted with respect to each other. The transis... | 06/10/2008 |
| 7365372 | Semiconductor device and method for manufacturing semiconductor device The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type region, and a second-conductivity-type region that are adjacent to eac... | 04/29/2008 |
| 7351614 | Deep trench isolation for thyristor-based semiconductor device A thyristor-based semiconductor device includes a filled trench separating and electrically insulating adjacent thyristor control ports. According to an example embodiment of the present invention, the filled trench is formed in a substrate adjacent to at least one ... | 04/01/2008 |
| 7352032 | Output driver with split pins The drains of the PMOS transistor and the NMOS transistor of a driver are separated and connected to two spaced-apart pins. The spaced-apart pins provide ESD protection to the NMOS transistor, which can be turned on during an ESD event by voltages that propagate thr... | 04/01/2008 |
| 7345326 | Electric signal transmission line An electric signal transmission line includes a signal electrode portion, a ground electrode portion and a dielectric portion formed on a semiconductor substrate. The signal electrode portion has a metal electrode through which an electric signals flows. The ground ... | 03/18/2008 |
| 7342282 | Compact SCR device and method for integrated circuits A semiconductor device and method for electrostatic discharge protection. The semiconductor device includes a first semiconductor controlled rectifier and a second semiconductor controlled rectifier. The first semiconductor controlled rectifier includes a first semi... | 03/11/2008 |
| 7342281 | Electrostatic discharge protection circuit using triple welled silicon controlled rectifier Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well cor... | 03/11/2008 |
| 7339255 | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the su... | 03/04/2008 |
| 7339203 | Thyristor and method of manufacture A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region ... | 03/04/2008 |
| 7332748 | Electro-static discharge protection device An electro-static discharge protection device includes a first conductive type well and a second conductive type well which are formed in a surface of the first conductive type layer or a first conductive type substrate. A first high concentration second conductive ... | 02/19/2008 |
| 7332749 | Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thickne... | 02/19/2008 |
| 7327433 | Display element, display device, and manufacturing method of display element Each of a pair of substrates respectively comprises an electrode and a rubbed alignment film on one surface, while the other surface is provided with a polarizer. The substrates are placed so that the surfaces provided with the alignment films are opposed to each ot... | 02/05/2008 |
