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| Number | Title | Issue Date |
| 8138520 | Bi-directional diode structure In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic. ... | 03/20/2012 |
| 8115231 | Semiconductor device A semiconductor device includes an insulating film formed over a semiconductor substrate, a Zener diode formed above the insulating film, an interlayer film formed above the Zener diode, and a gate aluminum and a source aluminum formed above the interlayer film. The... | 02/14/2012 |
| 7919790 | Semiconductor device and method of producing the same A semiconductor substrate and a method of its manufacture has a semiconductor substrate having a carbon concentration in a range of 6.0×1015 to 2.0×1017 atoms/cm3, both inclusively. One principal surface of the substrate is irradia... | 04/05/2011 |
| 7880193 | Method for forming an integral electromagnetic radiation shield in an electronic package A method and system for fabricating an integral electromagnetic radiation shield for an electronic package is disclosed. Various embodiments include exposing a portion of at least one ground contact feature in an electronic package by removing a portion of the elect... | 02/01/2011 |
| 7579631 | Variable breakdown characteristic diode A memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes is disclosed. The controllably conductive media includes a passive layer made of super ionic material and an active layer. When an external stimuli... | 08/25/2009 |
| 7560750 | Solar cell device In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semicond... | 07/14/2009 |
| 7488991 | Molecular controlled semiconductor device A semiconductor sensing device for sensing presence, absence or level of species-of-interest in the environment is disclosed. The semiconductor sensing device comprises at least one layer of molecules deposited thereon. The molecules are electrically-responsive to t... | 02/10/2009 |
| 7394108 | Light-emitting device and vehicle lamp A light-emitting device in which a light-emitting element, such as an LED, and an electrostatic protection element for protecting the light-emitting element from electrostatic breakdown are connected in parallel. The light-emitting device is configured such that a c... | 07/01/2008 |
| 7361942 | Transient voltage suppression device A bi-directional transient voltage suppression (“TVS”) device (101) includes a semiconductor die (201) that has a first avalanche diode (103) in series with a first rectifier diode (104) connected cathode to cathode, electrically coup... | 04/22/2008 |
| 7361943 | Silicon-based backward diodes for zero-biased square law detection and detector arrays of same A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode curre... | 04/22/2008 |
| 7352610 | Volatile memory elements with soft error upset immunity for programmable logic device integrated circuits Memory elements are provided that are immune to soft error upset events when subjected to high-energy atomic particle strikes. The memory elements have nonlinear high-impedance two-terminal elements that restrict the flow of discharge currents during a particle stri... | 04/01/2008 |
| 7323709 | Method for increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted wi... | 01/29/2008 |
| 7309638 | Method of manufacturing a semiconductor component A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth s... | 12/18/2007 |
| 7297990 | Si/SiGe interband tunneling diode structures including SiGe diffusion barriers A silicon-based interband tunneling diode (10, 110) includes a degenerate p-type doping (22, 130) of acceptors, a degenerate n-type doping (32, 118) of donors disposed on a first side of the degenerate p-type doping (22, 130), and a barri... | 11/20/2007 |
| 7279725 | Vertical diode structures A method of making a vertical diode structure is provided, the vertical diode structure having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interio... | 10/09/2007 |
| 7271405 | Intersubband detector with avalanche multiplier region A photodetector for use at wavelengths of 2 μm and longer has an intersubband absorption region to provide absorption at wavelengths beyond 2 μm, integrated with an avalanche multiplier region to provide low-noise gain. In one particular design, the intersubband a... | 09/18/2007 |
| 7272067 | Electrically-programmable integrated circuit antifuses Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) antifuse transistor serves as an electrically-programmable antifuse. In its unprogrammed state, the antifuse transistor is off and has a relatively high resistance. During programmi... | 09/18/2007 |
| 7268421 | Semiconductor chip assembly with welded metal pillar that includes enlarged ball bond A semiconductor chip assembly includes a semiconductor chip that includes a conductive pad, a conductive trace that includes a routing line and a metal pillar, a connection joint that electrically connects the routing line and the pad, and an encapsulant. The chip a... | 09/11/2007 |
| 7247949 | Semiconductor device with stacked chips A method of manufacturing a semiconductor device which can solve a problem in which a wafer is warped by the influence of thermal contraction of a sealing resin due to a difference in thermal contraction between the wafer and the sealing resin. A second wafer on whi... | 07/24/2007 |
| 7235874 | Semiconductor device, its manufacturing method, circuit board, and electronic unit A semiconductor device includes an interposer having first and second faces pointing in opposite directions to each other and a metallization pattern formed on the first face, and a semiconductor chip mounted on the first face of the interposer and having an electro... | 06/26/2007 |
| 7227173 | Semiconductor devices and methods A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device;... | 06/05/2007 |
| 7199403 | Semiconductor arrangement having a MOSFET structure and a zener device The invention relates to a semiconductor arrangement having a MOSFET structure and an active zener function. A n+-doped zone and a p+-doped zone are provided at the bottom of a trench for the purpose of forming zener diodes, the n+-d... | 04/03/2007 |
| 7199391 | Device with quantum dot layer spaced from delta doped layer A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of th... | 04/03/2007 |
| 7187012 | Device for protecting I/O lines using PIN or NIP conducting low capacitance transient voltage suppressors and steering diodes A device for protecting I/O lines using low capacitance steering diodes (1200) and PIN or NIP diodes (1202), (1203) is disclosed. A low capacitance diode arrangement configured as steering diodes protect a signal line or input/output (I/O) port ... | 03/06/2007 |
| 7187021 | Static induction transistor A transistor switch for a system operating at high frequencies is provided. The transistor switch comprises a graded channel region between a source region and a drain region, the graded channel region configured for providing a low resistance to mobile negative cha... | 03/06/2007 |
| 7170917 | Surface-emitting semiconductor laser The invention relates to a semiconductor laser of the surface emitting type. In order to provide a semiconductor laser which can be operated at normal ambient temperatures and has stable long-term characteristics, the semiconductor laser comprises an active zone hav... | 01/30/2007 |
| 7170104 | Arrangement with p-doped and n-doped semiconductor layers and method for producing the same An arrangement having p-doped semiconductor layers and n-doped semiconductor layers which exhibits transitions between the p-doped semiconductor layers and n-doped semiconductor layers, the transitions displaying a Zener breakdown upon application of a voltage chara... | 01/30/2007 |
| 7170103 | Wafer with vertical diode structures A method of making a vertical diode is provided, the vertical diode having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the dio... | 01/30/2007 |
| 7166875 | Vertical diode structures A method of making a vertical diode is provided, the vertical dioxide having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the d... | 01/23/2007 |
| 7132695 | Light emitting diode having a dual dopant contact layer A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conducti... | 11/07/2006 |
| 7131436 | Engine ignition system having noise protection circuit An ignition system for an internal combustion engine is connected to an ignition coil and to a circuit for providing an ignition signal. The ignition system includes a switch circuit connected to the ignition coil that switches on or off current supplied to the igni... | 11/07/2006 |
| 7105866 | Heterojunction tunneling diodes and process for fabricating same High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the ... | 09/12/2006 |
| 7067884 | Electrostatic discharge device M pieces of n-well regions nW are provided on a main surface of a p-type silicon substrate 3, and p-well regions pW are provided among the n-well regions adjacent to one another. Moreover, each of the M pieces of n-well regions nW includes an n-type diffusion... | 06/27/2006 |
| 7054775 | Digitizing system and rotary table for determining 3-D geometry of an object A digitizing system and rotary table for determining the three dimensional geometry of an object is described. An apparatus includes at least one sensor that detects information describing the three-dimensional geometry of the object and provides the information to ... | 05/30/2006 |
| 7038248 | Diverse band gap energy level semiconductor device Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof. ... | 05/02/2006 |
| 7020172 | Long wavelength vertical cavity surface emitting laser Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality... | 03/28/2006 |
| 7009204 | Thin film transistor with self-aligned intra-gate electrode A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two seco... | 03/07/2006 |
| 6995467 | Semiconductor component A semiconductor component contains two semiconductor bodies, which are spatially separated from one another and electrically interconnected. A compensation MOS field effect transistor is provided as the first semiconductor body, and a silicon carbide Schottky diode ... | 02/07/2006 |
| 6967350 | Memory structures A memory structure that includes a first electrode, a second electrode, a third electrode, a control element of a predetermined device type disposed between the first electrode and the second electrode, and a memory storage element of the predetermined device type d... | 11/22/2005 |
| 6965626 | Single mode VCSEL A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) t... | 11/15/2005 |
