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| Number | Title | Issue Date |
| 8154048 | Diode with shortened reverse recovery time without reducing impurity concentration In a pn junction diode having a conductivity modulating element provided on a first principal surface of a semiconductor substrate, when an impurity concentration of a p type impurity region is lowered to shorten a reverse recovery time, hole injection is suppressed... | 04/10/2012 |
| 7960753 | Surface plasmon polariton actuated transistors A surface plasmon polaritron activated semiconductor device uses a surface plasmon wire that functions as an optical waveguide for fast communication of a signal and functions as a energy translator using a wire tip for translating the optical signal passing through... | 06/14/2011 |
| 7932536 | Power rectifiers and method of making same In one embodiment the present invention includes a semiconductor rectifier device comprising a first, second, and third semiconductor regions and a gate. The first semiconductor region is of a first conductivity type. The second semiconductor region is adjacent to t... | 04/26/2011 |
| 7902569 | Si/SiGe interband tunneling diodes with tensile strain Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially cohere... | 03/08/2011 |
| 7893455 | Semiconductor light emitting device with stress absorber, LED printhead, and image forming apparatus An inclined surface having an inclination angle θ is formed in an edge portion which forms an opening portion of an inter-layer insulating film, thereby reducing a stress by the inclined surface. ... | 02/22/2011 |
| 7700969 | Type II interband heterostructure backward diodes A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a se... | 04/20/2010 |
| 7381997 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 06/03/2008 |
| 7372714 | Methods and memory structures using tunnel-junction device as control element A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device... | 05/13/2008 |
| 7361943 | Silicon-based backward diodes for zero-biased square law detection and detector arrays of same A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode curre... | 04/22/2008 |
| 7358581 | Quantum dot based pressure switch A semiconductor heterostructure based pressure switch comprising: first and second small bandgap material regions separated by a larger bandgap material region; a third small bandgap material region within the region of larger bandgap material, the third material re... | 04/15/2008 |
| 7352610 | Volatile memory elements with soft error upset immunity for programmable logic device integrated circuits Memory elements are provided that are immune to soft error upset events when subjected to high-energy atomic particle strikes. The memory elements have nonlinear high-impedance two-terminal elements that restrict the flow of discharge currents during a particle stri... | 04/01/2008 |
| 7345320 | Light emitting apparatus The present invention provides a method and apparatus for using light emitting diodes for curing and various solid state lighting applications. The method includes a novel method for cooling the light emitting diodes and mounting the same on heat pipe in a manner wh... | 03/18/2008 |
| 7335927 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 02/26/2008 |
| 7327026 | Vacuum diode-type electronic heat pump device and electronic equipment having the same An electronic heat pump device has an emitter and a collector, stems supporting these components, a spacing retention member for keeping a spacing between the stems constant, and a sealing member for maintaining a vacuum between the stems. The emitter has a first se... | 02/05/2008 |
| 7323709 | Method for increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted wi... | 01/29/2008 |
| 7320922 | Integrated circuit and method for manufacturing an integrated circuit on a semiconductor chip An integrated circuit on a semiconductor chip is provided with a first bipolar transistor and a second bipolar transistor. The first bipolar transistor has a first collector region of a first conductivity type, grown by at least one epitaxial layer, and the second b... | 01/22/2008 |
| 7297990 | Si/SiGe interband tunneling diode structures including SiGe diffusion barriers A silicon-based interband tunneling diode (10, 110) includes a degenerate p-type doping (22, 130) of acceptors, a degenerate n-type doping (32, 118) of donors disposed on a first side of the degenerate p-type doping (22, 130), and a barri... | 11/20/2007 |
| 7294868 | Super lattice tunnel junctions Super lattice structures in conjunction with a tunnel junction to provide an improved contact for multiple components. The tunnel junctions can include a first semiconductor material having a resistance parameter for conducting a current and a second semiconductor m... | 11/13/2007 |
| 7283389 | Gated diode nonvolatile memory cell array A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of... | 10/16/2007 |
| 7279725 | Vertical diode structures A method of making a vertical diode structure is provided, the vertical diode structure having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interio... | 10/09/2007 |
| 7272038 | Method for operating gated diode nonvolatile memory cell A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of... | 09/18/2007 |
| 7269062 | Gated diode nonvolatile memory cell A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of... | 09/11/2007 |
| 7247921 | Semiconductor apparatus and method of manufacturing same, and method of detecting defects in semiconductor apparatus A semiconductor apparatus includes a semiconductor substrate having a device region and a periphery region surrounding the device region; a semiconductor device provided in the device region of the semiconductor substrate; a first electrode pad provided on the semic... | 07/24/2007 |
| 7247531 | Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same This disclosure relates to field-effect-transistor (FET) multiplexing/demultiplexing architectures and methods for fabricating them. One of these FET multiplexing/demultiplexing architectures enables decoding of an array of tightly pitched conductive structures. Ano... | 07/24/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7205626 | Light-emitting or light-receiving with plurality of particle-shaped semiconductor devices having light-emitting or light-receiving properties In a semiconductor module, twenty five semiconductor devices having light receiving properties, for example, are arranged in five by five matrices using a conductor mechanism formed from six lead frames Each column of semiconductor devices is connected in series and... | 04/17/2007 |
| 7199402 | Semiconductor devices The present invention provides a semiconductor device embracing (a) a first semiconductor region defined by a first end surface, a second end surface opposing to the first end surface and a side boundary surface connecting the first and second end surfaces; (b) a se... | 04/03/2007 |
| 7173311 | Light-emitting semiconductor device with a built-in overvoltage protector An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers wh... | 02/06/2007 |
| 7170103 | Wafer with vertical diode structures A method of making a vertical diode is provided, the vertical diode having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the dio... | 01/30/2007 |
| 7166875 | Vertical diode structures A method of making a vertical diode is provided, the vertical dioxide having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the d... | 01/23/2007 |
| 7136406 | Pseudomorphic layer in tunnel junction VCSEL A vertical cavity surface emitting laser (VCSEL) includes an indium-based semiconductor alloy substrate, a first mirror stack over the substrate, an active region having a plurality of quantum wells over the first mirror stack, a tunnel junction over the active regi... | 11/14/2006 |
| 7130207 | Methods and memory structures using tunnel-junction device as control element A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device... | 10/31/2006 |
| 7123638 | Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material incl... | 10/17/2006 |
| 7119372 | Flip-chip light emitting diode A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A re... | 10/10/2006 |
| 7112865 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 09/26/2006 |
| 7109528 | Light receiving or emitting semiconductor apparatus With a solar ball 10 serving as a light-receiving semiconductor apparatus, the outer surface of a spherical solar cell 1 is covered with a light-transmitting outer shell member 11, and electrode members 14, 15 are connected to electrodes ... | 09/19/2006 |
| 7105866 | Heterojunction tunneling diodes and process for fabricating same High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the ... | 09/12/2006 |
| 7098122 | Method of fabricating a vertically integrated memory cell A unique cell structure for use in flash memory cell and a method of fabricating the memory cell. More particularly, a vertically integrated transistor having a pair of floating gates is fabricated within a trench in a substrate. The floating gates are fabricated us... | 08/29/2006 |
| 7095050 | Voltage-matched, monolithic, multi-band-gap devices Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a st... | 08/22/2006 |
| 7091572 | Fast recovery diode with a single large area p/n junction A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periph... | 08/15/2006 |
