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| Number | Title | Issue Date |
| 7442319 | Poly etch without separate oxide decap The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a hi... | 10/28/2008 |
| 7435162 | Polishing fluids and methods for CMP Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synerg... | 10/14/2008 |
| 7416680 | Self-cleaning colloidal slurry composition and process for finishing a surface of a substrate A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant ads... | 08/26/2008 |
| 7407601 | Polymeric particle slurry system and method to reduce feature sidewall erosion A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than abou... | 08/05/2008 |
| 7351662 | Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishi... | 04/01/2008 |
| 7314578 | Slurry compositions and CMP methods using the same The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants t... | 01/01/2008 |
| 7241920 | Filterable surfactant composition An improved aqueous soluble surfactant which has particular utility for incorporating in etchants for semiconductor devices is provided. The surfactant comprises a combination of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol. ... | 07/10/2007 |
| 7235516 | Semiconductor cleaning composition comprising an ethoxylated surfactant A substrate surface cleaning liquid medium and a cleaning method using the cleaning liquid medium are capable of removing finely particulate contaminants more efficiently than conventional techniques from substrates for devices in the production of semiconductor dev... | 06/26/2007 |
| 7235188 | Aqueous phosphoric acid compositions for cleaning semiconductor devices The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The solution according to the invention may advantageous contain ... | 06/26/2007 |
| 7204890 | Process for removing fine particulate soil from hard surfaces Many prior art processes for cleaning predominantly organic hard surfaces have been found to be considerably less effective in removing very fine particles on such surfaces than are the best cleaners for metallic surfaces. However, it has been found, and forms the b... | 04/17/2007 |
| 7169322 | Aqueous dispersion, process for its production and use Aqueous dispersion containing a silicon-aluminum mixed oxide powder, the powder containing 0.1 to 99.9 wt. % Al2O3 and Si—O—Al-bonds. The dispersion can be produced using dispersing and/or grinding devices which a achieve an energy input of... | 01/30/2007 |
| 7135444 | Cleaning composition useful in semiconductor integrated circuit fabrication A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water ... | 11/14/2006 |
| 7087561 | Cleaning composition useful in semiconductor integrated circuit fabrication A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water ... | 08/08/2006 |
| 7067465 | Cleaning composition useful in semiconductor integrated circuit fabricating A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water ... | 06/27/2006 |
| 7067466 | Cleaning composition useful in semiconductor integrated circuit fabrication A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water ... | 06/27/2006 |
| 7041232 | Selective etching of substrates with control of the etch profile A wet etching system for selectively patterning substrates having regions covered with self-assembled monolayers (SAM) thereby controlling the etch profile. The system contains a) a liquid etching solution; and b) at least one additive to the liquid etching solution... | 05/09/2006 |
| 7018556 | Method to etch chrome deposited on calcium fluoride object A method for maintaining a micro-roughness finish after etching chrome from a surface of a calcium fluoride (CaF2) object. Etching the chrome a first amount in a first chrome etchant. Etching the chrome a second amount beyond the first predetermined amoun... | 03/28/2006 |
| 6923919 | Liquid crystal polymers for flexible circuits A process for providing a metal-seeded liquid crystal polymer comprising the steps of providing a liquid crystal polymer substrate to be treated by applying an aqueous solution comprising an alkali metal hydroxide and a solubilizer as an etchant composition for the ... | 08/02/2005 |
| 6821352 | Compositions for removing etching residue and use thereof A composition for removing etching residue and a method using same are disclosed herein. In one aspect, there is provided a method for removing etching residue from a substrate comprising: contacting the substrate with a composition comprising water, an organic dica... | 11/23/2004 |
| 6783690 | Method of stripping silver from a printed circuit board A method of stripping silver from a printed circuit board without attacking the underlying base metal. The stripping solution comprises an oxidizing agent, an alkaline pH adjuster, and a silver solubilizing agent. After the silver has been sufficiently removed from ... | 08/31/2004 |
| 6767477 | Etching process to selectively remove copper plating seed layer Write head coils for magnetic disk systems are commonly formed through electroplating onto a seed layer in the presence of a photoresist mask. It is then necessary to remove the seed layer everywhere except under the coil itself. The present invention achieves this ... | 07/27/2004 |
| 6758872 | Polishing slurry A polishing slurry prepared by dispersing in a dispersion medium, abrasive grains comprised of a material having a solubility in the dispersion medium at 25° C., of 0.001 g/100 g or higher is used to effectively remove any abrasive grains standing adherent to the s... | 07/06/2004 |
| 6753001 | Dental acid etchant composition A gel composition for use in etching the surfaces of teeth in preparation for prophylaxis, repair, or restoration, comprising an aqueous solution of an effective quantity of an acid; and a colloidal silica sol, wherein the silica portion of the sol comprises from ab... | 06/22/2004 |
| 6677286 | Compositions for removing etching residue and use thereof Compositions containing water, an organic dicarboxylic acid, a buffering agent and fluorine source and optionally a water miscible organic solvent are capable of removing etching residue.... | 01/13/2004 |
| 6656370 | Method for the manufacture of printed circuit boards A process for the manufacture of printed circuit boards is disclosed wherein a plated silver deposit is used both as an etch resist and as a final finish for enhancing the solderability of the copper circuits. An aqueous alkaline etchant which is free of ... | 12/02/2003 |
| 6645051 | Polishing composition and polishing method for polishing a substrate to be used for a memory hard disk employing it A polishing composition for a substrate to be used for a memory hard disk, which comprises the following components (a) to (d): (a) water, (b) at least one compound selected from the group consisting of a polyoxyethylene polyoxypropylene alkyl ether an... | 11/11/2003 |
| 6627107 | Slurry for chemical mechanical polishing silicon dioxide A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functio... | 09/30/2003 |
| 6616514 | High selectivity CMP slurry The present invention provides a chemical mechanical polishing slurry for use in removing a first substance from a surface of an article in preference to silicon nitride by chemical mechanical polishing. The chemical mechanical polishing slurry according ... | 09/09/2003 |
| 6599370 | Stabilized alkaline compositions for cleaning microelectronic substrates The invention provides aqueous alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions typically contain (a) ... | 07/29/2003 |
| 6585825 | Stabilized alkaline compositions for cleaning microelectronic substrates The invention provides aqueous alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions typically contain (a) ... | 07/01/2003 |
| 6582623 | CMP composition containing silane modified abrasive particles A polishing composition comprising a dispersion of silane modified abrasive particles formed by combining at least one metal oxide abrasive having at least one surface metal hydroxide with at least one silane compound and methods for polishing substrate f... | 06/24/2003 |
| 6569349 | Additives to CMP slurry to polish dielectric films A method and composition for planarizing a substrate. The composition includes one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, a polar solvent, and deionized water. The composition may further comprise one or more su... | 05/27/2003 |
| 6569215 | Composition for polishing magnetic disk substrate An object of the present invention is to provide a composition for polishing a magnetic disk substrate that is used as a storage device for a computer or the like, and is capable of producing a magnetic disk substrate polished with high precision suitable... | 05/27/2003 |
| 6537916 | Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supe... | 03/25/2003 |
| 6531071 | Passivation for cleaning a material A contact is defined by an opening etched into borophosphosilicate glass (BPSG) down to a silicon substrate. In a contact cleaning process designed to remove native oxide at the bottom of the contact with little effect on the BPSG, the contact is dipped i... | 03/11/2003 |
| 6527819 | Polishing slurries for copper and associated materials A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on ba... | 03/04/2003 |
| 6468913 | Ready-to-use stable chemical-mechanical polishing slurries In accordance with the invention, there is provided a chemical-mechanical polishing slurry for polishing a substrate. The slurry is comprised primarily of abrasive particles and an oxidizing agent, wherein the slurry exhibits a stability having a shelf li... | 10/22/2002 |
| 6468951 | Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication A composition prepared from water, hydrofluoric acid (HF) and tetraalkylammonium hydroxide (TAAH, preferably tetramethylammonium hydroxide (TMAH)) or tetraalkylammonium fluoride and solvent with or without HF or TAAH is used to clean residue from a semico... | 10/22/2002 |
| 6461534 | Low lead release plumbing components made of copper based alloys containing lead, and a method for obtaining the same Lead brass components for potable water distribution circuits (e.g., plumbing components made of CuZn39Pb3, containing 3% Pb), also chronium plated ones, are subjected to a lead-selective surface etching to reduce, in operation, the release of Pb caused b... | 10/08/2002 |
| 6458291 | Light sensitive chemical-mechanical polishing aggregate A chemical-mechanical polishing apparatus has a surface formed on a solid aggregate comprising a solid suspension of abrasive particles in a light sensitive material. An ultraviolet light source exposes a thin top layer of the surface and a developing flu... | 10/01/2002 |
