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| Number | Title | Issue Date |
| 7842193 | Polishing liquid According to an aspect of the invention, there is provided a polishing liquid for polishing a barrier metal material on an interlayer insulation material, the polishing liquid having a pH of from 2.0 to 6.0 and including an aqueous solution containing a compound rep... | 11/30/2010 |
| 7435356 | Abrasive-free chemical mechanical polishing compositions and methods relating thereto An aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition comprises an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weight percent water soluble modi... | 10/14/2008 |
| 7427362 | Corrosion-resistant barrier polishing solution The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The polishing solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibito... | 09/23/2008 |
| 7422700 | Compositions and methods of electrochemical removal of material from a barrier layer of a wafer Methods and compositions have been provided for removing barrier layer material from a work piece during an electrochemical mechanical polishing process while protecting a metallization layer of the work piece. The electrochemical planarization composition includes ... | 09/09/2008 |
| 7407601 | Polymeric particle slurry system and method to reduce feature sidewall erosion A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than abou... | 08/05/2008 |
| 7399424 | Compositions for dissolution of low-k dielectric films, and methods of use An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both ... | 07/15/2008 |
| 7390429 | Method and composition for electrochemical mechanical polishing processing A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition compris... | 06/24/2008 |
| 7384534 | Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP Electrolyte compositions and methods for planarizing a surface of a substrate using the electrolyte compositions are provided. In one aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, and one or more pH adjus... | 06/10/2008 |
| 7368064 | Cleaning solution and manufacturing method for semiconductor device A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and ... | 05/06/2008 |
| 7351353 | Method for roughening copper surfaces for bonding to substrates The invention is directed to a method and composition for providing roughened copper surfaces suitable for subsequent multilayer lamination. A smooth copper surface is contacted with an adhesion promoting composition under conditions effective to provide a roughened... | 04/01/2008 |
| 7347951 | Method of manufacturing electronic device A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist... | 03/25/2008 |
| 7332436 | Process of removing residue from a precision surface using liquid or supercritical carbon dioxide composition A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface i... | 02/19/2008 |
| 7320940 | Method for manufacturing electronic device including package In a method for manufacturing an acceleration sensor device, a lid for covering an opening of a package body is prepared by stamping. The lid is plated and plating films are formed on surfaces of the lid. The burrs formed on the surfaces of the lid in the plating pr... | 01/22/2008 |
| 7316603 | Compositions and methods for tantalum CMP A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard... | 01/08/2008 |
| 7314578 | Slurry compositions and CMP methods using the same The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants t... | 01/01/2008 |
| 7311857 | Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an ox... | 12/25/2007 |
| 7311855 | Polishing slurry for chemical mechanical polishing and method for polishing substrate The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing ... | 12/25/2007 |
| 7311856 | Polymeric inhibitors for enhanced planarization The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the polishing system. ... | 12/25/2007 |
| 7306747 | Use of fluorinated additives in the etching or polishing of integrated circuits Use in etching or polishing of integrated circuits of fluorinated additives of formula (I): T′(C3F6O)n(CFXO)mT   (I) having a number average molecular weight in the range 250â... | 12/11/2007 |
| 7300601 | Passivative chemical mechanical polishing composition for copper film planarization A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates... | 11/27/2007 |
| 7300602 | Selective barrier metal polishing solution The polishing solution is useful for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisti... | 11/27/2007 |
| 7297633 | Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection The present invention provides a method of manufacturing a composition for polishing silica and silicon nitride on a semiconductor substrate. The method comprises ion-exchanging carboxylic acid polymer to reduce ammonia and combining by weight percent 0.01 to 5 of t... | 11/20/2007 |
| 7294044 | Slurry composition and method for polishing organic polymer-based ophthalmic substrates The present invention provides a slurry composition and method for polishing organic polymer-based ophthalmic substrates. The slurry composition according to the invention includes an aqueous dispersion of abrasive particles and a pyrrolidone compound. The abrasive ... | 11/13/2007 |
| 7288212 | Additive composition, slurry composition including the same, and method of polishing an object using the slurry composition An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid including a second polymeric acid having a sec... | 10/30/2007 |
| 7279119 | Silica and silica-based slurry This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing art... | 10/09/2007 |
| 7276180 | Chemical mechanical polishing composition and process A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adj... | 10/02/2007 |
| 7273566 | Gas compositions Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good selectivity to both nitrides and field oxides. Integrated circuits produced... | 09/25/2007 |
| 7262409 | Chemical etch solution and technique for imaging a device's shallow junction profile The present invention provides, in one aspect, a method of imaging a microelectronics device 100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydro... | 08/28/2007 |
| 7255809 | Polishing slurry for texturing Polishing slurry for texturing the surface of a magnetic hard disk substrate has abrading particles with diameters in the range of 1-10 nm dispersed in a dispersant such as water and a water-based aqueous solution. The abrading particles may be monocrystalline diamo... | 08/14/2007 |
| 7255810 | Polishing system comprising a highly branched polymer The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof. ... | 08/14/2007 |
| 7252782 | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass ba... | 08/07/2007 |
| 7253111 | Barrier polishing solution The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhi... | 08/07/2007 |
| 7247179 | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two di... | 07/24/2007 |
| 7241920 | Filterable surfactant composition An improved aqueous soluble surfactant which has particular utility for incorporating in etchants for semiconductor devices is provided. The surfactant comprises a combination of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol. ... | 07/10/2007 |
| 7238618 | System for the preferential removal of silicon oxide A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride 5 ions, (b) about 1 wt. % or more of an ... | 07/03/2007 |
| 7235188 | Aqueous phosphoric acid compositions for cleaning semiconductor devices The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The solution according to the invention may advantageous contain ... | 06/26/2007 |
| 7232529 | Polishing compound for chemimechanical polishing and polishing method This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a polishing method making use of this polishing medium. Also, it is preferable... | 06/19/2007 |
| 7232528 | Surface treatment agent for copper and copper alloy The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and copper alloys is useful in the production of printed wiring boards in elec... | 06/19/2007 |
| 7229570 | Slurry for chemical mechanical polishing The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water. ... | 06/12/2007 |
| 7229569 | Etching reagent, and method for manufacturing electronic device substrate and electronic device The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring material, while allowing time-dependent changes of the etching rate to... | 06/12/2007 |
