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| Number | Title | Issue Date |
| 8153019 | Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isot... | 04/10/2012 |
| 8038901 | Polishing fluids and methods for CMP Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synerg... | 10/18/2011 |
| 7938982 | Silicon wafer etching compositions A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions. ... | 05/10/2011 |
| 7846349 | Solution for the selective removal of metal from aluminum substrates The present disclosure relates to a solution for selectively removing metal, such as Ta or TaN, from a substrate, such as an aluminum containing substrate. The solution comprises an acid, such as HF or buffered HF, an ingredient comprising a fluorine ion, such as am... | 12/07/2010 |
| 7442324 | Etching reagent, and method for manufacturing electronic device substrate and electronic device The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring material, while allowing time-dependent changes of the etching rate to... | 10/28/2008 |
| 7435356 | Abrasive-free chemical mechanical polishing compositions and methods relating thereto An aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition comprises an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weight percent water soluble modi... | 10/14/2008 |
| 7427362 | Corrosion-resistant barrier polishing solution The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The polishing solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibito... | 09/23/2008 |
| 7407601 | Polymeric particle slurry system and method to reduce feature sidewall erosion A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than abou... | 08/05/2008 |
| 7399424 | Compositions for dissolution of low-k dielectric films, and methods of use An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both ... | 07/15/2008 |
| 7368064 | Cleaning solution and manufacturing method for semiconductor device A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and ... | 05/06/2008 |
| 7361631 | Compositions for the removal of organic and inorganic residues A composition and method using same for removing photoresist and/or processing residue from a substrate are described herein. In one aspect, there is provided a composition for removing residue consisting essentially of: an acidic buffer solution having an acid sele... | 04/22/2008 |
| 7351354 | Tungsten metal removing solution and method for removing tungsten metal by use thereof A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained. ... | 04/01/2008 |
| 7347951 | Method of manufacturing electronic device A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist... | 03/25/2008 |
| 7335268 | Inorganic compound for removing polymers in semiconductor processes An inorganic compound for removing polymers after a semiconductor etching process and related methods and apparatus are disclosed. An example compound includes DIW, H2SO4, H2O2 and HF. An example method for removing polyme... | 02/26/2008 |
| 7332436 | Process of removing residue from a precision surface using liquid or supercritical carbon dioxide composition A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface i... | 02/19/2008 |
| 7320942 | Method for removal of metallic residue after plasma etching of a metal layer A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution. ... | 01/22/2008 |
| 7314578 | Slurry compositions and CMP methods using the same The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants t... | 01/01/2008 |
| 7314823 | Chemical mechanical polishing composition and process A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adj... | 01/01/2008 |
| 7311857 | Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an ox... | 12/25/2007 |
| 7309449 | Substrate processing method A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal fil... | 12/18/2007 |
| 7306747 | Use of fluorinated additives in the etching or polishing of integrated circuits Use in etching or polishing of integrated circuits of fluorinated additives of formula (I): Tâ²(C3F6O)n(CFXO)mT ââ(I) having a number average molecular weight in the range 250â... | 12/11/2007 |
| 7279119 | Silica and silica-based slurry This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing art... | 10/09/2007 |
| 7279194 | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus A means of effectively applying an organic EL material application liquid with good application liquid cut-off is provided. A heater and an ultrasonic oscillator are formed in a thin film formation apparatus when applying the application liquid, and heat and ultraso... | 10/09/2007 |
| 7276402 | Semiconductor device and manufacturing method thereof A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof. A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon ... | 10/02/2007 |
| 7276181 | Method for preparing decorative glass using glass etching composition A method for preparing a decorative glass using a glass etching composition, wherein a frosting of elaborate patterns and designs is applied on the surface of the glass having an arbitrary shape, such a plane, a curved plane or a tube, by utilizing the silk-screen p... | 10/02/2007 |
| 7261835 | Acid blend for removing etch residue A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of phosphoric acid, hydrofluoric acid, and a carboxylic acid, such as acetic acid, ... | 08/28/2007 |
| 7253111 | Barrier polishing solution The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhi... | 08/07/2007 |
| 7247208 | Microelectronic cleaning compositions containing ammonia-free fluoride salts Ammonia-free, HF-free cleaning compositions for cleaning photoresist and plasma ash residues from microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized b... | 07/24/2007 |
| 7247179 | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two di... | 07/24/2007 |
| 7241920 | Filterable surfactant composition An improved aqueous soluble surfactant which has particular utility for incorporating in etchants for semiconductor devices is provided. The surfactant comprises a combination of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol. ... | 07/10/2007 |
| 7235188 | Aqueous phosphoric acid compositions for cleaning semiconductor devices The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The solution according to the invention may advantageous contain ... | 06/26/2007 |
| 7235494 | CMP cleaning composition with microbial inhibitor An antimicrobial cleaning composition and methods for cleaning semiconductor substrates, particularly after chemical mechanical planarization or polishing, are provided. In one embodiment, the cleaning composition combines a solvent, a cleaning agent such as a hydro... | 06/26/2007 |
| 7229569 | Etching reagent, and method for manufacturing electronic device substrate and electronic device The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring material, while allowing time-dependent changes of the etching rate to... | 06/12/2007 |
| 7223352 | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ... | 05/29/2007 |
| 7208454 | Cleaning solution for removing anti-reflective coating composition A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5â30% by weight of ammonium hydroxide, about 23â70% by weight... | 04/24/2007 |
| 7192860 | Highly selective silicon oxide etching compositions Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from about 0.5 to about 3 percent by solution weight of hydrofluoric acid and ... | 03/20/2007 |
| 7168436 | Gas for removing deposit and removal method using same The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be mad... | 01/30/2007 |
| 7153706 | Ferroelectric capacitor having a substantially planar dielectric layer and a method of manufacture therefor The present invention provides a ferroelectric capacitor, a method of manufacture therefor, and a method of manufacturing a ferroelectric random access memory (FeRAM) device. The ferroelectric capacitor (100), among other elements, includes a substantially pl... | 12/26/2006 |
| 7153449 | Acidic treatment liquid and method of treating copper surfaces The present invention relates to a solution and to a method of treating copper surfaces, the copper surfaces being brought into contact with an acidic treatment liquid which contains hydrogen peroxide and at least one five-membered heterocyclic compound as well as a... | 12/26/2006 |
| 7138342 | Process of maintaining hybrid etch Process for combined chemical cleaning and etching of parts made of aluminum and/or aluminum alloys including: (a) providing a cleaning and etching solution including 5â30 grams/liter of phosphoric acid; 5â30 grams/liter of hydrogen fluoride; 120â220 grams/lit... | 11/21/2006 |
