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| Number | Title | Issue Date |
| 7736530 | CMP slurry and method for polishing semiconductor wafer using the same Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so... | 06/15/2010 |
| 7442324 | Etching reagent, and method for manufacturing electronic device substrate and electronic device The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring material, while allowing time-dependent changes of the etching rate to... | 10/28/2008 |
| 7442323 | Potassium monopersulfate solutions A composition comprising a solution of potassium monopersulfate having an active oxygen content of from about 3.4% to about 6.8% and a process for its preparation including neutralization with an alkaline material is disclosed. ... | 10/28/2008 |
| 7435356 | Abrasive-free chemical mechanical polishing compositions and methods relating thereto An aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition comprises an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weight percent water soluble modi... | 10/14/2008 |
| 7427362 | Corrosion-resistant barrier polishing solution The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The polishing solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibito... | 09/23/2008 |
| 7416680 | Self-cleaning colloidal slurry composition and process for finishing a surface of a substrate A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant ads... | 08/26/2008 |
| 7407601 | Polymeric particle slurry system and method to reduce feature sidewall erosion A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than abou... | 08/05/2008 |
| 7404910 | Etching solution, etched article and method for etched article An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25° C. ... | 07/29/2008 |
| 7402261 | Slurry compositions, methods of preparing slurry compositions, and methods of polishing an object using slurry compositions A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include ... | 07/22/2008 |
| 7399424 | Compositions for dissolution of low-k dielectric films, and methods of use An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both ... | 07/15/2008 |
| 7390429 | Method and composition for electrochemical mechanical polishing processing A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition compris... | 06/24/2008 |
| 7368387 | Polishing composition and polishing method A polishing composition includes fumed alumina, alumina other than fumed alumina, colloidal silica, a first organic acid, a second organic acid, an oxidizing agent, and water. When the second organic acid is citric acid, the first organic acid is preferably malic ac... | 05/06/2008 |
| 7357879 | Etching solution, method of etching and printed wiring board There is provided an etching solution comprised of a cupric chloride solution and a high-concentration triazole type compound added to the cupric chloride solution and capable of forming an etching-inhibiting coating. In a process of forming a circuit pattern by etc... | 04/15/2008 |
| 7351354 | Tungsten metal removing solution and method for removing tungsten metal by use thereof A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained. ... | 04/01/2008 |
| 7344988 | Alumina abrasive for chemical mechanical polishing Methods of manufacturing alumina abrasive for use in chemical mechanical polishing are described, wherein the abrasive is in a slurry having gamma alumina formed in a low temperature fuming process, water, an acid sufficient to maintain the pH below about 7, wherein... | 03/18/2008 |
| 7332436 | Process of removing residue from a precision surface using liquid or supercritical carbon dioxide composition A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface i... | 02/19/2008 |
| 7332104 | Slurry for CMP, polishing method and method of manufacturing semiconductor device Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal ... | 02/19/2008 |
| 7314578 | Slurry compositions and CMP methods using the same The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants t... | 01/01/2008 |
| 7311857 | Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an ox... | 12/25/2007 |
| 7306747 | Use of fluorinated additives in the etching or polishing of integrated circuits Use in etching or polishing of integrated circuits of fluorinated additives of formula (I): T′(C3F6O)n(CFXO)mT   (I) having a number average molecular weight in the range 250â... | 12/11/2007 |
| 7300602 | Selective barrier metal polishing solution The polishing solution is useful for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisti... | 11/27/2007 |
| 7300601 | Passivative chemical mechanical polishing composition for copper film planarization A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates... | 11/27/2007 |
| 7285229 | Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the etchant into contact with at least one metal selected from nickel, c... | 10/23/2007 |
| 7285334 | Material for packaging cell, bag for packaging cell, and its production method A lithium battery comprises a pouch (4) and a lithium battery module (2) packaged in the pouch (4). The pouch (4) is formed from a battery packaging laminated structure (10). The laminated structure (10) has an outermost lay... | 10/23/2007 |
| 7279425 | Polishing method A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film fo... | 10/09/2007 |
| 7279119 | Silica and silica-based slurry This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing art... | 10/09/2007 |
| 7276181 | Method for preparing decorative glass using glass etching composition A method for preparing a decorative glass using a glass etching composition, wherein a frosting of elaborate patterns and designs is applied on the surface of the glass having an arbitrary shape, such a plane, a curved plane or a tube, by utilizing the silk-screen p... | 10/02/2007 |
| 7276180 | Chemical mechanical polishing composition and process A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adj... | 10/02/2007 |
| 7271029 | Method of forming a package-ready light-sensitive integrated circuit A package-ready light-sensitive integrated circuit and process for preparing a light-sensitive semiconductor substrate for packaging that provide for a reduced exposure of a light-sensitive integrated circuit to light. The package-ready light-sensitive integrated ci... | 09/18/2007 |
| 7267784 | Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and... | 09/11/2007 |
| 7261828 | Bumping process A method of forming a plurality of bumps over a wafer mainly comprises providing the wafer having a plurality of bonding pads formed thereon, forming an under bump metallurgy (UBM) layer over the bonding pads wherein the UBM layer includes an adhesive layer, for exa... | 08/28/2007 |
| 7262409 | Chemical etch solution and technique for imaging a device's shallow junction profile The present invention provides, in one aspect, a method of imaging a microelectronics device 100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydro... | 08/28/2007 |
| 7261835 | Acid blend for removing etch residue A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of phosphoric acid, hydrofluoric acid, and a carboxylic acid, such as acetic acid, ... | 08/28/2007 |
| 7256137 | Method of forming contact plug on silicide structure A method of manufacturing a semiconductor device is provided comprising the steps of: (a) forming a semiconductor element on a substrate, the semiconductor element having at least one nickel silicide contact region, a first etch stop layer formed over the element an... | 08/14/2007 |
| 7253111 | Barrier polishing solution The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhi... | 08/07/2007 |
| 7241920 | Filterable surfactant composition An improved aqueous soluble surfactant which has particular utility for incorporating in etchants for semiconductor devices is provided. The surfactant comprises a combination of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol. ... | 07/10/2007 |
| 7235188 | Aqueous phosphoric acid compositions for cleaning semiconductor devices The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The solution according to the invention may advantageous contain ... | 06/26/2007 |
| 7232478 | Adhesion promotion in printed circuit boards An adhesion promotion process and composition for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. The composition contains a corrosion inhibitor, an inorganic acid, and an alcohol which is... | 06/19/2007 |
| 7232529 | Polishing compound for chemimechanical polishing and polishing method This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a polishing method making use of this polishing medium. Also, it is preferable... | 06/19/2007 |
| 7229569 | Etching reagent, and method for manufacturing electronic device substrate and electronic device The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring material, while allowing time-dependent changes of the etching rate to... | 06/12/2007 |
