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| Number | Title | Issue Date |
| 8173039 | Method for preparing cerium oxide powder using organic solvent and CMP slurry comprising the same Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of... | 05/08/2012 |
| 8147711 | Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte tha... | 04/03/2012 |
| 8147712 | Polishing composition Disclosed is a polishing composition containing not less than 1 wt % of a water-soluble resin, which is obtained by polymerizing a vinyl monomer containing an amino group and/or an amide group, based on the total weight of the polishing composition. ... | 04/03/2012 |
| 8137580 | CMP slurry composition for forming metal wiring line Disclosed is CMP slurry, which includes a pyridine-based compound including at least two pyridinyl groups, and minimizes the occurrence of dishing and erosion of a wiring line. ... | 03/20/2012 |
| 8123976 | Alkaline aqueous solution composition used for washing or etching substrates As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate surface during processing, a next process for removing the adsorbed meta... | 02/28/2012 |
| 8092707 | Compositions and methods for modifying a surface suited for semiconductor fabrication The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in modifying a surface of a wafer suited for fabrication of a semiconductor dev... | 01/10/2012 |
| 8075800 | Polishing slurry and polishing method A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers repres... | 12/13/2011 |
| 8062547 | CMP slurry, preparation method thereof and method of polishing substrate using the same A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modi... | 11/22/2011 |
| 8062548 | Polishing slurry An object of one embodiment of the present invention is to provide a polishing slurry which can reduce dishing and erosion of a to-be-polished semiconductor wafer. The polishing slurry contains an oxidizing agent and two or more kinds of abrasive grains for polishin... | 11/22/2011 |
| 8057696 | Compositions and methods for rapidly removing overfilled substrates This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide,... | 11/15/2011 |
| 8057697 | Lapping composition and method using same A lapping composition is presented, wherein that lapping composition is formed by mixing a solvent, a base, and a phenolic compound having structure I: wherein R1 is selected from the group consisting of —O−M... | 11/15/2011 |
| 8052889 | Etchant composition, and methods of patterning conductive layer and manufacturing flat panel display device using the same An etchant composition, and methods of patterning a conductive layer and manufacturing a flat panel display device using the same are provided. The etchant composition may include phosphoric acid, nitric acid, acetic acid, water and an additive, wherein the additive... | 11/08/2011 |
| 8043525 | Wet etching solution A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric aci... | 10/25/2011 |
| 8034252 | Metal-polishing liquid and chemical-mechanical polishing method using the same A metal-polishing liquid includes colloidal silica and a compound represented by Formula (I) or a compound represented by Formula (II). The colloidal silica is substituted by aluminum atoms at least one portion of the silicon atoms on the surfaces thereof. In Formul... | 10/11/2011 |
| 8025811 | Composition for etching a metal hard mask material in semiconductor processing An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. Th... | 09/27/2011 |
| 8025812 | Selective etch of TiW for capture pad formation A chemical etchant containing hydrogen peroxide and phosphate ions at a controlled pH is provided for selectively etching metals in the presence of one or more metals not to be etched. The etchant is useful in the fabrication of semiconductor components particularly... | 09/27/2011 |
| 8025813 | Chemical mechanical polishing composition and methods relating thereto A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing compositio... | 09/27/2011 |
| 7988878 | Selective barrier slurry for chemical mechanical polishing The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent... | 08/02/2011 |
| 7981316 | Selective barrier metal polishing method The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the ... | 07/19/2011 |
| 7981317 | Composition for surface modification of a heat sink and method for surface treatment of the heat sink for printed circuit boards using the same The present invention provides a composition for surface modification of a heat sink, the composition including: 0.01 to 10 parts by weight of an organic titanium compound; 0.01 to 5 parts by weight of an organic silane compound; 0.1 to 10 parts by weight of an orga... | 07/19/2011 |
| 7976723 | Method for kinetically controlled etching of copper An etching composition, particularly for kinetically controlled etching of copper and copper alloy surfaces; a process for etching copper and copper alloys, particularly for etching at high rates to provide uniform and smooth, isotropic surfaces; an etched copper or... | 07/12/2011 |
| 7968000 | Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.... | 06/28/2011 |
| 7955519 | Composition and method for planarizing surfaces The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina particles have an average diameter of 200 nm or less, and 80% of the α-... | 06/07/2011 |
| 7955520 | Copper-passivating CMP compositions and methods The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the inve... | 06/07/2011 |
| 7955521 | Etchant and method for fabricating a thin film transistor substrate including conductive wires using the etchant and the resulting structure Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deioni... | 06/07/2011 |
| 7947195 | Polishing slurry The present invention discloses a polishing slurry, wherein said polishing slurry comprises a carrier and functionalized alumina grains. The polishing slurry, which comprises functionalized alumina grains having desirable dispersibility, has desirable stability and ... | 05/24/2011 |
| 7906038 | Aqueous polishing liquid and chemical mechanical polishing method An aqueous polishing liquid is provided that includes an oxidizing agent, a five-membered monocyclic compound having at least three nitrogen atoms or a compound in which a hetero ring is fused to said compound, and a compound having an imidazole skeleton or an isoth... | 03/15/2011 |
| 7897061 | Compositions and methods for CMP of phase change alloys The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by ... | 03/01/2011 |
| 7887715 | Chemical mechanical polishing slurry composition including non-ionized, heat activated nano-catalyst and polishing method using the same Disclosed herein are a chemical mechanical polishing slurry composition for chemical mechanical planarization of metal layers, which comprises a non-ionized, heat-activated nano-catalyst, and a polishing method using the same. The polishing slurry composition compri... | 02/15/2011 |
| 7879255 | Method and composition for electrochemically polishing a conductive material on a substrate Polishing compositions and methods for removing conductive materials from a substrate surface are provided. The method includes providing a substrate comprising dielectric feature definitions, a barrier material disposed in the feature definitions, and a bulk conduc... | 02/01/2011 |
| 7850866 | Etchant and array substrate having copper lines etched by the etchant An etchant includes hydrogen peroxide (H2O2), and a mixed solution including at least one of an organic acid, an inorganic acid, and a neutral salt. ... | 12/14/2010 |
| 7842192 | Multi-component barrier polishing solution The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for redu... | 11/30/2010 |
| 7842191 | CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent... | 11/30/2010 |
| 7833435 | Polishing agent The invention relates to the use of gluconates in the production of semiconductor wafers, preferably in the polishing of the semiconductor wafers during the production process, and to a polishing agent based on an abrasive substance and/or colloid and a mixture of d... | 11/16/2010 |
| 7824568 | Solution for forming polishing slurry, polishing slurry and related methods A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a ... | 11/02/2010 |
| 7820067 | Halide anions for metal removal rate control The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, an oxidizing agent, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing system. ... | 10/26/2010 |
| 7820068 | Chemical assisted lapping and polishing of metals Compositions for lapping gears and methods for preparing the same are described. These compositions contain a salt of polyaspartic acid and may contain additional components that are useful for lapping gears. Also provided are processes for using the compositions de... | 10/26/2010 |
| 7776231 | Chemical mechanical polishing slurries, their applications and method of use thereof This invention disclosed a chemical mechanical polishing slurry, which includes at least one abrasive particle, an oxidant and a carrier. The oxidant is combined with a big metallorganic compound; and the applications and corresponding handling method are also discl... | 08/17/2010 |
| 7754098 | Chemical-mechanical polishing composition and method for using the same The invention provides a chemical-mechanical polishing composition comprising: (a) silica particles, (b) about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, bar... | 07/13/2010 |
| 7731864 | Slurry for chemical mechanical polishing of aluminum Described herein are embodiments of a slurry used for the chemical mechanical polishing a substrate that includes aluminum or an aluminum alloy features having a width of less than 1 um. The slurry includes a precipitated silica abrasive having a diameter of less th... | 06/08/2010 |
